• Electrical & Electronic Materials
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• v.10 no.7
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• pp.674-681
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• 1997

Ternary compound ceramics, (1-y-x) BaTiO$_3$-y SrTiO$_3$-x MgTiO$_3$(0.00 x 0.20), were fabricated by the conventional ceramic process. The structural and dielectric properties of specimens were investigated while varying the composition and sintering temperature(1,200~1,45$0^{\circ}C$) in order to obtain the optimum condition of capacitor. As is well known, Curie temperature(T$_{c}$) of high dielectric-based ceramic(BaTiO$_3$) was shifted and temperature of capacitance was decreased in according to increase of solid solution with (Sr, Mg)TiO$_3$. As a result, a suitable condition of compound rate for capacitor was obtained such as the BSM-11(0.8BaTiO$_3$-0.1SrTiO$_3$-0.1MgTiO$_3$), and sintering temperature was sintered at 1,25$0^{\circ}C$ for two hours. In this case, dielectric constant<1,300, dielectric loss(tan$\delta$)<0.03, and the variation rate of capacitance had less than 3% in the range -10~7$0^{\circ}C$.>.

• Journal of Electrical Engineering and Technology
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• v.9 no.5
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• pp.1719-1723
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• 2014

In this study, the microwave dielectric properties of nano spheroidization glass powders added $Ba(Zn_{1/3}Ta_{2/3})O_3$ ceramics prepared by solid state reaction have been investigated. Adding $(Ba_{0.4}Ca_{0.6})SiO_3$ nano spheroidization glass powders could effectively promote the densification even in the case of decreasing the sintering temperature. When the glass frit is 0.3 wt% and sintering is carried out at a temperature of $1500^{\circ}C$ for 6 hr, a temperature stable microwave dielectric ceramic could be obtained, which has a dielectric constant (${\varepsilon}_r$) of 30.2, a quality factor ($Q{\times}f_0$) of 124,000 GHz and a temperature coefficient of resonance frequency (${\tau}_f$) of $2ppm/^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.797-802
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• 2014

In this study, in order to develop the capacitor composition ceramics with the good dielectric properties, $(Ba_{1-x}Ca_x)(Ti_{0.85}Zr_{0.12}Sn_{0.03})O_3$ (abbreviated as BCTZ) ceramics were prepared by the conventional solid-state reaction method. The effects of Ca substitution on the microstructure and dielectric properties was investigated. The X-ray diffraction patterns demonstrated that all the specimens showed perovskite phase, and secondary phases are indicated in the measurement range of X-ray diffraction. Also, all the specimens indicated an rhombohedron phase structure. It was identified from the X-ray diffraction patterns that the secondary phase formed in grain boundaries and then decreased the dielectric properties. For all the specimens, observed one peak was tetragonal cubic phase transition temperature($T_c$), which is located in the vicinity of room temperature.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.3
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• pp.528-531
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• 1994

Digitalization in electronic system is required the capacitor which have a large capacitance with small size, low impedance at high frequency, and high reliability. The fabrication and its properties of aluminum solid electrolytic capacitor are investigated. Employing conduction polymer film such as, polypyrrole as solid electroylte, solid type aluminum electrolytic capacitors were made. The surface of insulationg oxide is covered with conducting polymer layer prepared by chemical oxidative polymerization. Thereafter this conducting layer is covered with conducting polymer prepared by electrochemical polymerization. The dielectric properties of these capacitors were also measured and discussed. Regarding on frequency characteristics of the trial made capacitor, impedance and ESR at high frequency is lower than those of the stacked type film capacitor. It is alo confirmed that temperature coefficient of capacitance and dissipation factor of the capacitor are lower than those of film capacitor and liquid type aluminum electrolytic capacitor.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1028-1030
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• 1995

In the fields of the optics, precise machine, semiconducting processing, the micro-positioning actuators are required for the control of position in the submicron range. In this study, $Pb(Ni_{1/3}Nb_{2/3})O_3-Pb({Zn}_{1/3}Nb_{2/3})O_3-Pb({Zr}_{1/2}Ti_{1/2})O_3$ ceramics were fabricated by solid state reaction. The structural, dielectric and electric properties were investigated for sintering condition. The specimen sintered at $1,150(^\circ}C)$ for 1hr, had the highest density and dielectric contant. The resistivity, dielectric and density were increased with increasing PZN contents.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.86-86
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• 2009

The $(Na_{0.5}K_{0.5})NbO_3-SrTiO_3$ ceramics were produced by the conventional solid-state sintering method, and their microstructure and electrical properties were investigated. All $(Na_{0.5}K_{0.5})NbO_3-SrTiO_3$ ceramic show dense and homogeneous structure without the presence of the rosette structure. The dielectric constant, loss and remanent polarization of $(Na_{0.5}K_{0.5})NbO_3-SrTiO_3$ ceramics were superior to those of single composition $(Na_{0.5}K_{0.5})NbO_3$

• Journal of the Korean Ceramic Society
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• v.25 no.5
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• pp.488-494
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• 1988

Effects of MnO2 addition on themicrostructure, dielectric and piezoelectric properties of Rhombohedral, Tetragonal and Morphotropic phase boundary(MPB) in Pb(Ni1/3Nb2/3)O3-PbTiO3-PbZrO3 system were investigated and respectively the amount of MnO2 addition was 0, 0.2, 0.5, 1.0, 3.0wt%. In the tetragonal region, compared with the Rhombohedral and Morpotropic phase boundary, Mechanical quality factor(Qm), Curie temperature(Tc) and Dissipation factor were promoted by addition of MnO2. According to the results of the microstructure, dielectric and piezoelectric properties, the solid solution range of MnO2 addition in this system was 0.2-0.5wt%.

• Korean Journal of Crystallography
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• v.11 no.4
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• pp.195-199
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• 2000

Ceramics based on CaTiO₃-NdAlO₃ solid solutions were synthesized in order to study their dielectric microwave properties. Microstructural analysis was performed with scanning electron microscopy (SEM) and transmission electron microscopy (TEM) using different analytical methods such as energy-dispersive X-ray spectroscopy (EDXS). It was observed that the heating conditions during sintering and cooling strongly affect the microstructural development of CaTiO₃-NdAlO₃-based ceramics. Various types and concentrations of structural defects were identified, for example, dislocations, twins and/or antiphase boundaries. all such defects resulted in a degradation of the dielectric microwave properties, in particular the quality factor Q. Dielectric properties of CaTiO₃-NdAlO₃-based ceramics can be improved by an appropriate thermal treatment of ceramics which results in a decrease in the concentrations of the identified microstructural defects.

• Advances in materials Research
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• v.2 no.3
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• pp.173-180
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• 2013

Lead-free complex perovskite ceramics $NaMeO_3$ ($Me{\equiv}Nb$, Ta) were synthesized using conventional solid state reaction technique and characterized by structural, FTIR and electrical (dielectric and ac conductivity) studies. The crystal symmetry, space group and unit cell dimensions were determined from the experimental results using FullProf software. XRD analysis of the compound indicated the formation of single-phase orthorhombic structure with the space group Pmmm (47). Dielectric studies showed the diffuse phase transition at $394^{\circ}C$ for $NaNbO_3$ and $430^{\circ}C$ for $NaTaO_3$. Ac conductivity in both the compounds follows Jonscher's power law.

• 연구논문집
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• s.25
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• pp.185-192
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• 1995

The solid/liquid interface migration in Nb-doped $SrTiO_3$ and its effect on dielectric properties have been investigated. The specimen sintered in air shows no migration during oxide infiltration treatment in air, whereas the specimen sintered in $5H_2-95N_2$ shows appreciable migration during similar infiltration. In the migrated layers of the specimen sintered in a reducing atmosphere, no cations of the infiltrants are detected by wavelength dispersive spectroscopy. These results show that nonstoichiometry due to the atmosphere change can induce the interface migration as in the case of frequently observed migrations due to solute concentration change. The driving force for the migration is discussed in terms of the coherency strain energy in a thin diffusional oxidized layer of the receding grain. The interface migration caused by nonstoichiometry could be suppressed by preoxidizing grain surfaces before oxide infiltration treatment. The suppression of migration increased the effective dielectric constant of the material.