• Journal of the Korean Vacuum Society
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• v.17 no.5
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• pp.442-447
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• 2008

Ferroelectric samples of the 0.65Pb$(Mg_{1/3}Ta_{2/3})O_3-0.35PbTiO_3$ modified with $Ag_2O$ were prepared by sintering at $1200^{\circ}C$ for 4 h. The fractured surface of sintered pellets were examined by scanning electron microscopy(SEM). The dielectric constant, loss, and pyroelectric coefficient of the ceramics samples were determined. The dielectric and pyroelectric properties could be improved with the addition of small amount of $Ag_2O$ up to 0.2 mol%. The dielectric and pyroelectirc peak temperatures are continuously shifted to lower temperature with addition of small amounts of $Ag_2O$.

• Journal of the Korean Ceramic Society
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• v.55 no.4
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• pp.364-367
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• 2018

The phase evolution, microstructure, and microwave dielectric properties of Sr-substituted $Ba(Mg_{0.5}W_{0.5})O_3$ ceramics, i.e., $(Ba_{1-x}Sr_x)(Mg_{0.5}W_{0.5})O_3$ ($0{\leq}x{\leq}0.30$), sintered at $1700^{\circ}C$ for 1 h were investigated. All compositions showed a 1 : 1 ordered perovskite structure. In all the compositions, $BaWO_4$ was detected as the secondary phase. With increasing x in ($Ba_{1-x}Sr_x$) $(Mg_{0.5}W_{0.5})O_3$, the lattice parameter increased linearly, indicating that a substitutional solid solution occurred. All compositions exhibited a dense microstructure. The value of ${\varepsilon}_r$ increased slightly with increasing x. The value of $Q{\times}f_0$ increased with the increase in x up to x = 0.10 and reached a saturated value of about 100,000 GHz. The composition for x = 0.20, i.e., $(Ba_{0.80}Sr_{0.20})(Mg_{0.5}W_{0.5})O_3$, sintered at $1700^{\circ}C$ for 1 h exhibited superior microwave dielectric properties of ${\varepsilon}_r=19.6$, $Q{\times}f_0=99,358GHz$, and ${\tau}_f=0.0ppm/^{\circ}C$, respectively.

• Korean Journal of Materials Research
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• v.25 no.10
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• pp.566-570
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• 2015

$Bi_{0.5}Na_{0.5}TiO_3$ (BNT) based ceramics are considered potential lead-free alternatives for $Pb(Zr,Ti)O_3$(PZT) based ceramics in various applications such as sensors, actuators and transducers. However, BNT-based ceramics have lower electromechanical performance as compared with PZT based ceramics. Therefore, in this work, lead-free bulk $0.99[(Bi_{0.5}Na_{0.5})_{0.935}Ba_{0.065}]_{(1-x)}La_xTiO_3-0.01SrZO_3$ (BNBTLax-SZ, with x = 0, 0.01, 0.02) ceramics were synthesized by a conventional solid state reaction The crystal structure, dielectric response, degree of diffuseness and electric-field-induced strain properties were investigated as a function of different La concentrations. All samples were crystallized into a single phase perovskite structure. The temperature dependent dielectric response of La-modified BNBT-SZ ceramics showed lower dielectric response and improved field-induced strain response. The field induced strain increased from 0.17%_for pure BNBT-SZ to 0.38 % for 1 mol.% La-modified BNBT-SZ ceramics at an applied electric field of 6 kV/mm. These results show that La-modified BNBT-SZ ceramic system is expected to be a new candidate material for lead-free electronic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.214.2-214.2
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• 2013

Device performance for the 45 and 32 nm node CMOS technology requires the integration of ultralow-k materials. To lower the dielectric constant for PECVD and spin-on materials, partial replacement of the solid network with air (k=1.01) appears to be more intuitive and direct option. This can be achieved introducting of second "labile" phase during depositoin that is removed during a subsequent UV curing and annealing step. Besides, with shrinking line dimensions the resistivity of barrier films cannot meet the International Technology Roadmap for Semiconductors (ITRS) requirements. To solve this issue self-forming diffusion barriers have drawn attention for great potential technique in meeting all ITRS requirments. In this present work, we report a Cu-V alloy as a materials for the self-forming barrier process. And we investigated diffusion barrier properties of self-formed layer on low-k dielectrics with or without UV curing treatment. Cu alloy films were directly deposited onto low-k dielectrics by co-sputtering, followed by annealing at various temperatures. X-ray diffraction revealed Cu (111), Cu (200) and Cu (220) peaks for both of Cu alloys. The self-formed layers were investigated by transmission electron microscopy. In order to compare barrier properties between V-based interlayer on low-k dielectric with UV curing and interlayer on low-k dielectric without UV curing, thermal stability was measured with various heat treatment temperature. X-ray photoelectron spectroscopy analysis showed that chemical compositions of self-formed layer. The compositions of the V based self-formed barriers after annealing were strongly dominated by the O concentration in the dielectric layers.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.6
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• pp.261-267
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• 2023

Crystal structure, microstructure, and dielectric properties of the (Ca, Sr)(Zr, Ti)O₃ (CSZT) system has been studied as a function of sintering temperature and MgO addition for microwave applications. A single-phase CSZT powder with the orthorhombic crystal structure was obtained by the solid-state reaction method. The powder compacts were sintered at 1200℃, 1300℃, and 1400℃ respectively. All the sintered samples had a single-phase orthorhombic crystal structure and grain size increased with sintering temperature. In the case of 1 mol% MgO addition, the orthorhombic crystal structure was the main phase; however, a secondary phase appeared during sintering at 1400℃, as determined by EDS analysis. At 1400℃, the undoped and MgO-doped CSZT had almost similar grain size distribution and densification but the grain size distribution became slightly narrow. The MgO-doped CSZT showed excellent low-loss dielectric properties: ε_r = 34.14, tanδ = 0.00047, τ_ε = -3.58 ppm/℃ at 1 MHz.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.51-59
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• 1998

($Na_{1/2}Ln_{1/2}$)$TiO_3$ceramics have a high relative dielectric constant and a positive temperature coefficient of resonant frequency ($\tau_f$)(where Ln represents a lanthanide: $La^{+3}$, $Pr^{+3}$, $Nd^{+3}$ and $Sm^{+3}$). On the other hand, $MgTiO_3$ ceramic has a high Qf value and a negative temperature coefficient. So We have investigated the microwave dielectric properties of $xMgTiO_3$-(1-x) ($Na_{1/2}Ln_{1/2}$)$TiO_3$. In these systems, there are no clues on solid-solution and secondary phase. There are mixed phases with $MgTiO_3$and ($Na_{1/2}Ln_{1/2}$)$TiO_3$ phases. Its dielectric characteristics (Qf, temperature coefficient and dielectric constant) are intermediate between ($Na_{1/2}Ln_{1/2}$)$TiO_3$ and $MgTiO_3$ and are predictable by the logarithmic mixing rule. The dielectric ceramic compositions temperature coefficient each approximates to zero at Ln=La, x=0.9, Ln=Pr, x=0.87, and Ln=Nd, x=0.84. At this time, there are Qf values in the range of 55,000 to 28,00GHz and relative dielectric constants in the range of 22 to 25.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.280-280
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• 2010

Semiconductor quantum dots are of great interest for both fundamental research and industrial applications due to their unique size dependant properties. The most promising application of colloidal semiconductor nanocrystals (quantum dots or QDs) is probably as emitters in biomedical labeling, LEDs, lasers etc. As compared to II-VI quantum dots, III-V have attracted greater interest owing to their less ionic lattice, larger exciton diameters and reduced toxicity. Among the III-V semiconductor quantum dots, Indium Phosphide (InP) is a popular material due to its bulk band gap of 1.35 (eV) which is responsible for the photoluminescence emission wavelength ranging from blue to near infrared with change in size of QDs. Nevertheless, in recent years, the exact type of collective properties that arise when semiconductor quantum dots (QDs) are assembled into two- or three-dimensional arrays has drawn much interest. The term "uantum dot solids" is used to indicate three-dimensional assemblies of semiconductor QDs. The optoelectronic properties of the quantum dot solids are known to depend on the electronic structure of the individual quantum dot building blocks and on their electronic interactions. This paper reports an efficient and rapid method to produce highly luminescent and monodisperse quantum dots solution and solid through fabrication of InP thin films. By varying the molar concentration of Indium to Ligand, QDs of different size were prepared. The absorption and emission behaviors were also studied. Similar measurements were also performed on InP quantum dot solid by fabricating InP thin films. The optical properties of the thin films are measured at different curing temperatures which show a blue shift with increase in temperature. The dielectric properties of the thin films were also investigated by Capacitance-voltage(C-V) measurements in a metal-insulator-semiconductor (MIS) device.

• Composites Research
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• v.36 no.3
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• pp.224-229
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• 2023

Due to the increasing demand for wearable devices and miniaturization of various electronic devices, the trend of nanofabrication in IT devices is underway. In order to overcome the limitations of battery size and capacity, there has been a lot of research interest in energy harvesting technology, also known as triboelectric nanogenerator. AAO(Anodic Aluminum oxide) coated with fluoride is a structure that includes an anode layer with high properties in the triboelectric series, an dielectric layer that helps transfer the triboelectrically generated charges to the electrode without loss, and the electrode. For these reasons, AAO has been a lot of research on its application to frictional energy harvesting nanogenerators. In this work, we analyzed the correlation of AAO between the surface morphology and thickness of the insulating layer by utilizing aluminum oxide, which is advantageous for the application of triboelectric nanogenerators, and adjusting the thickness of the insulating layer.

• Korean Journal of Crystallography
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• v.13 no.3_4
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• pp.165-171
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• 2002

Single phase $Pb(Fe_{1/2}Ta_{1/2})O_3$, ceramics were successfully synthesized from the powders prepared by solid state reaction (sintering temperature: $1100^{\circ}C$, density: $9.3g/cm^3$, average grain size: $5.1{\pm}1.2mm$, space group: Pm3m). Their dielectric properties measured at $-150{\sim}50^{\circ}C$ showed the maximum relative dielectric constant of 31000 at $-41^{\circ}C$. 1 kHz, and typical relaxor ferroelectrics characteristics such as diffuse phase transition and dielectric relaxation phenomena. However, the diffuseness of phase transition decreased and the dielectric properties became more normal ferroelectrics as the time of annealing at $1000^{\circ}C$ increased. By using Raman spectroscopy, it was revealed that the $Fe^{3+}$ and $Ta^{5+}$ ions in the as-sintered $Pb(Fe_{1/2}Ta_{1/2})O_3$, are stoichiometrically 1 : 1 ordered within the short-range that can not be probed even by transmission electron microscopy, and this stoichiometric 1 : 1 ordering is enhanced by the annealing. The relaxor ferroelectric characteristics in the as-sintered $Pb(Fe_{1/2}Ta_{1/2})O_3$, could be correlated with the stoichiometric 1 : 1 short-range ordering of B-site cations, and the decrease of relaxor ferroelectric characteristics in the annealed $Pb(Fe_{1/2}Ta_{1/2})O_3$ could be correlated with the enhanced stoichiometric 1 : 1 short-range ordering of B-site cations.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.11
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• pp.690-693
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• 2015

In this paper, in order to develop excellent Pb-free composition ceramics for ultrasonic sensor. The $SnO_2$-doped ($Na_{0.525}K_{0.443}Li_{0.037})(Nb_{0.883}Sb_{0.08}Ta_{0.037})O_3$)(abbreviated as NKL-NST) ceramics have been synthesized using the ordinary solid state reaction method. The effect of $SnO_2$-doping on their dielectric and piezoelectric properties was investigated. The ceramics doped with 0 wt% $SnO_2$ have the optimum values of piezoelectric constant($d_{33}$), piezoelectric figure of merit($d_{33}.g_{33}$), planar piezoelectric coupling coefficient($k_p$) and density : $d_{33}=195[pC/N]$, $d_{33}.g_{33}=5.62pm^2/N.kp=0.40$, $density=4.436[g/cm^3]$. suitable for duplex ultrasonic sensor application.