• Solar Energy
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• v.15 no.2
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• pp.77-90
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• 1995

An effective heat transfer during freezing process was proposed in the vertical cylinder to improve the effectiveness of the heat storage. Vertical cylinder was filled with pure water in order to investigate ice-shape, temperature distribution of the liquid, temperature distribution of the cylinder tube wall, total heat storage per unit mass in the test section under the two experimental conditions; inlet temperature of working fluid is constant($-10^{\circ}C$) and inlet direction of working fluid is either upward flow or downward. Both the mean temperature of the liquid and temperature difference of cylinder tube wall in the upward were lower than those in the downward. In case that the initial temperature of water was $7^{\circ}C$ and $4^{\circ}C$, the shape of ice layer in the upward was more uniform than that in the downward. In case of $1^{\circ}C$, the shape of ice layer is formed by inlet direction of working fluid. Finally, time-varying total heat energy stored in the water in the upward was higher than that in the downward.

• Solar Energy
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• v.13 no.2_3
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• pp.65-78
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• 1993

An overdose of fossil fuel for greenhouse heating causes not only the high cost and low quality of agricultural products, but also the environmental pollution of farm village. To solve these problems it is desirable to maximize the solar energy utilization for the heating of greenhouse in winter season. In this study phase change materials were selected to store solar energy concentratively for heating the greenhouse and their characteristics of thermal energy storage were analyzed. The results were summarized as follows. The organic $C_{28}H_{58}$, and the inorganic $CH_3COONa{\cdot}3H_2O\;and\;Na_2SO_4{\cdot}10H_2O$ were selected as low temperature latent heat storage materials. The equation of critical radius was derived to define the generating mechanism of the maximum latent heat of phase change materials. The melting point of $C_{28}H_{58}$ was $62^{\circ}C$, and the latent heat was $50.0{\sim}52.0kcal/kg$. The specific heat of liquid and solid phase was $0.54{\sim}0.69kcal/kg^{\circ}C$ and $0.57{\sim}0.75kcal/kg^{\circ}C$ respectively. The melting point of $CH_3COONa{\cdot}3H_2O$ was $61{\sim}62^{\circ}C$, the latent heat was $64.9{\sim}65.8$ kcal/kg and the specific heat of liquid and solid phase was respectively $0.83kcal/kg^{\circ}C$ and $0.51{\sim}0.52kcal/kg^{\circ}C$. The melting point of $Na_2SO_4{\cdot}10H_2O$ was $30{\sim}30.9^{\circ}C$, the latent heat was 53.0 kcal/kg and the specific heat of liquid and solid phase was respectively $0.78{\sim}0.89kcal/kg^{\circ}C$ and $0.50{\sim}0.7kcal/kg^{\circ}C$ When the urea of 21.85% was added to control the melting point of $Na_2SO_4{\cdot}10H_2O$ and the phase change cycles were repeated from 0 to 600, the melting point was $16.7{\sim}16.0^{\circ}C$ and the latent heat was $36.0{\sim}28.0kcal/kg^{\circ}C$.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.94.2-94.2
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• 2010

Indium tin oxide (ITO) Thin films were grown on Non-alkarai glass Substrates by PVD method and Subsequently Subjected to ($100^{\circ}C-350^{\circ}C$) Thermal Annealing (TA) In Nitr Oxygen ambinent. Most of all, The effect of TA treatment on the structural properties were studied by using X-Ray diffraction and atomic force microscopy, while optical properties were studied by UV-Transmittance measurements. After TA treatment, the XRD spectra have shown an effective relaxation of the residual compressive stress, As a result, XRD peaks increase of the intensity and narrowing of full width at half-maximun (FWHM). In addtion The microstructure, The surface morphology, the optical transmittance changed and improved, and we investigated The effects of temperature, Time and atmosphere during the TA on the structural and electrical properties of the ITO/glass on TA at $300^{\circ}C$. As a results, the films are highly transparent (80%～89%) in visible region. AFM analysis shows that the films are very smooth with root mean square surface roughness 0.58nm -2.75nm thickness film. It is observed that resistivity of the films drcreases T0 $1.05{\times}10^{-4}{\Omega}cmt$ $6.06{\times}10^{-4}{\Omega}cm$, while mobility increases from $152cm^2/vs$ to $275cm^2/vs$.

• Journal of IKEEE
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• v.22 no.1
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• pp.213-215
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• 2018

In this study, we fabricate amorphous carbon thin films on silicon substrates by DC sputtering method and investigate the optical property and photothermal characteristics. A representative amorphous carbon thin film has a absorption value of 97% at a wavelength of 1000 nm and shows a temperature increase of $3^{\circ}C$ from $21.1^{\circ}C$ to $24.1^{\circ}C$ during white light irradiation. In addition, the amorphous carbon film has a heating rate four times higher than that of the substrate during light irradiation for 50 sec.

• Journal of Astronomy and Space Sciences
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• v.24 no.2
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• pp.179-194
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• 2007

The design and analysis of satellite power subsystem is an important driver for the mass, size, and capability of the satellite. Every other satellite subsystem is affected by the power subsystem, and in particular, important issues such as launch vehicle selection, thermal design, and structural design are largely influenced by the capabilities and limitations of the power system. This paper introduces a new electrical power subsystem design program for the rapid development of LEO satellite and shows an example of design results using other LEO satellite design data. The results shows that the proposed design program can be used the optimum sizing and the analytical prediction of the on-orbit performance of satellite electrical power subsystem.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.94-94
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• 2009

최근 실리콘 태양전지는 점점 얇아 지는 추세에 있다. 실리콘 태양전지에 있어 실리콘의 두께를 감소시키는 것은 실리콘 소모량을 줄이는데 있어 필수적인 조건이 되었다. 이에 따라 실리콘 표면의 passivation도 더욱 중요하게 여겨지고 있다. 실리콘 태양전지의 passivation막의 한 종류인 $Al_2O_3$는 다른 산화막 물질들과는 달리 negative fixed charge를 가지고 있고 charge의 양이 다른 산화막의 density보다 높아 p-type 실리콘의 경우 후면 passivation막으로 이용이 고려되고 있다. 본 연구에서는 atomic layer deposition으로 $Al_2O_3$막을 실리콘 위에 증착하여 열처리에 따른 그 특성을 비교하고 태양전지를 제작하였다. $Al_2O_3$막을 rapid thermal annealing을 통해 서로 다른 분위기에서 열처리 한 결과를 capacitance-voltage를 통해 측정하여 비교, 분석하였고 ellipsomety 분석을 통해 광학적 특성을 비교하였다. 또한 열처리 온도의 변화에 따른 $Al_2O_3$내에 charge에 변화가 있다는 것을 관찰하였다. 이러한 charge의 변화가 태양전지의 passivation에 영향을 주는지 관찰하기 위해 Quasi-steady state photoconductace를 통해 lifetime의 변화를 관찰 하였다. 이러한 실험결과로부터 열처리 분위기와 온도를 최적화 하여 태양전지 passivation 특성을 증가시킬 수 있었다.

• 한국태양에너지학회:학술대회논문집
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• 2009.04a
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• pp.180-183
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• 2009

In this study, Urban Climate Simulation was performed by 3-Dimensional Urban Canopy Model. The characteristics of urban climate was analyzed combining artificial land coverage, building size, heat production from the air conditioning and topographic conditions as physical variables which affects urban climate characteristics. The results are as follows. (1)The aspects of the urban climatal change is derived to be related to the combination of the building coverage ratio, building height and shading area. (2)Whole heat generation was influenced by the convective sensible heat at the lower building height and by the artificial heat generation at the higher one over 20-story building influence to some extent of the building coverage ratio. The effect of the altitude is not more considerable than the other variables as below $1^{\circ}C$ of the air temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.424-430
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• 1996

The present processing sequence for solar cells is very elaborate and ads to the cost of the fabricated cells. This processing cost, which accounts for about 30% of the total cost, can be reduced if the many high temperature sequences can be reduced without significantly reducing the cells energy conversion efficiency. By using the spin-on glasses (SOG) in conjunction with the conventional tube furnace (CTF) or rapid thermal annealer (RTA), the many high temperature process can be reduced to only one. In order to achieve efficiencies similar to the standard high temperature sequences using the solid or liquid sources, some basic characterization of the groove diffusion is necessary to ascertain the its suitability. This paper describes the work done in diffusing the buried contact grooves using the phosphorus SOG.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.985-988
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• 2004

The carrier lifetime of boron doped Cz silicon samples after light induced degradation could be improved by optimized rapid thermal processing (RTP). The important five different parameters varied in order to investigate which parameter is important for the stable lifetime after light induced degradation, $\tau_d$. The Plateau temperature and the Plateau time influenced on the lifetime after light induced degradation. Especially, the Plateau temperature showed a strong influence on the stable lifetime. The optimal plateau temperature is approximately $900^{\circ}C$ t for a plateau time of 120 s. The stable lifetime increased from $15\mu}s$ to $25.5{\mu}s$. The normalized defect concentration, $N_t^*$, decreased from $0.06{\mu}s^{-1}$ to $0.037{\mu}s^{-1}$ by RTP-process.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.589-589
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• 2012

Indium sulfide thin films have been grown onto glass substrates using radio frequency magnetron sputtering at room temperature. The as-deposited film were annealed in nitrogen atmosphere at different temperatures of 100, 200, 300, 400 and $500^{\circ}C$ with an 1 h annealing time. The effect of annealing temperature on composition, structure, morphology and optical properties of the as-grown In2S3 films has been studied. The XRD results indicate that the as-deposited films are composed by a mixture of both cubic ${\alpha}$ and ${\beta}$ crystalline phases, with some fraction of tetragonal phase. The thermal annealing on the films produces the conversion of the cubic crystalline phases to the tetragonal ${\beta}$ one and a crystalline reorientation of the latter phase. The surface morphological analysis reveals that the films grown at $300^{\circ}C$ have an average grain size of ~ 58 nm. These films show a S/In ratio of 0.99. The optical band gap is found to be direct and the films grown at $300^{\circ}C$ shows a higher optical transmittance of 80% and an energy band gap of 2.52 eV.