• Title/Summary/Keyword: solar plasma

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Measurement of EUV Emission and its Plasma Parameters Generated from the Coaxial Plasma Focus of Mather and Hypocycloidal Pinched Electrodes

  • Lee, Sung-Hee;Lee, Kyung-Ae;Hong, Young-June;Uhm, Han-Sup;Choi, Eun-Ha
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.332-332
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    • 2011
  • The extreme ultraviolet (EUV) radiation, whose wavelength is from 120 nm down to 10 nm, and the energy from 10 eV up to 124 eV, is widely utilized such as in photoelectron spectroscopy, solar imaging, especially in lithography and soft x-ray microscopy. In this study, we have investigated the plasma diagnostics as well as the debris characteristics between the two types of dense plasma focusing devices with coaxial electrodes of Mather and hypocycloidal pinch (HCP), respectively. The EUV emission intensity, electron temperature and plasma density have been investigated in these cylindrical focused plasma along with the debris characteristics. An input voltage of 5 kV has been applied to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ar gas at pressure ranged from 1 mTorr and 180 mTorr. The inner surface of the cathode was covered by polyacetal insulator. The central anode electrode has been made of tin. The wavelength of the EUV emission has been measured to be in the range of 6~16 nm by a photo-detector (AXUV-100 Zr/C, IRD). The visible emission has also been measured by the spectrometer with the wavelength range of 200~1,100 nm. The electron temperature and plasma density have been measured by the Boltzmann plot and Stark broadening methods, respectively, under the assumption of local thermodynamic equilibrium (LTE).

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A Study on Energy Recovery Circuit in Sputtering Plasma Power supply for arc Discharge Prevention (스퍼터용 플라즈마 전원장치의 아크방지를 위한 에너지 회생회로에 대한 연구)

  • Ban, Jung-Hyun;Han, Hee-Min;Kim, Joohn-Sheok
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.61 no.3
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    • pp.116-121
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    • 2012
  • Recently, in the field of renewable energy such as solar cells including the semiconductor and display industries, thin film deposition process is being diversified. Furthermore, to deal with trend of making high-quality and fast, the high-capacity and output plasma power supply which can control high density plasma is required. The biggest problem is arc discharge caused by using high voltage power supply. Thus, the key function of plasma power supply is to prevent arc discharge and there is a need to maintain the possible minimum arc energy. In DC sputtering power supply, on a periodic basis (-)voltage powering up is able to significantly reduce arcing, as well as arc discharge prevention, and maintaining uniform charge density. This conventional method for powering up (-)voltage requires heavy mutual inductance of the transformer to avoid distortion problem of the output voltage. This study is about energy recovery circuit for arc discharge prevention in sputtering plasma power supply. By using energy recovery circuit, it is possible to reduce the mutual inductance and size of the transformer dramatically, prevent distortion of the output voltage and has a stable output waveform. This work was proved through simulation and experimental study.

Plasma Jet을 이용한 고속 박막 증착 기법의 연구

  • Lee, Yun-Seong;Bae, In-Sik;Seol, Yu-Bin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.326-326
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    • 2011
  • 최근 다양한 종류의 태양전지의 연구가 수행되고 있으며 그 중 박막형 태양전지 및 웨이퍼 실리콘 기반의 태양전지의 경우 태양전지의 효율 및 생산단가를 충족시키는 것에 연구의 목적이 집중되어 있다. 이러한 사항을 만족시키기 위하여 대면적 PECVD기반의 플라즈마 소스를 적용하려는 연구가 진행되고 있으며 결정질의 실리콘 박막 증착에 있어서 다중접합 태양전지 기준으로 효율 10% 내외를 유지하면서 결정질 기준 증착속도 0.5 nm/sec의 성과를 보이고 있다. 하지만 단위 가격 당 전력 생산 단가의 경쟁력을 확보하기 위하여 증착속도의 고속화에 대한 연구가 더욱 진행되어야 한다. 본 연구에서는 새로운 플라즈마 방전 개념으로서 Gas의 분사되는 Jet을 plasma에 통과시켜 증착속도의 향상을 도모하는 plasma 소스를 제시하였다. 새로운 방전 개념을 이용하여 다양한 공정조건인 압력(3~8 torr), Gas ratio([SiH4]/[H2]), RF power에서의 Plasma의 특성을 확인 하였으며 해당 조건에서의 박막 특성을 확인하여 비정질 기준 3 nm/sec, 결정질 기준 결정화도 약 70%의 조건에서 증착속도 2 nm/sec의 결과를 확인하였다. 또한 해당 조건에서의 효율 및 FF, $V_{oc}$, $I_{sc}$를 확인하여 태양전지로서의 적용가능성을 확인하였다. 마지막으로 해당소스의 대면적 적용가능성을 확인하기 위하여 대면적 plasma 개념의 모델중 하나인 In-line 개념의 plasma source로서의 적용 가능성을 제시하였다.

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Influence of Deposition Parameters on Film Hardness for Newly Synthesized BON Thin Film by Low Frequency R.F. PEMOCVD

  • G.C. Chen;J.-H. Boo;Kim, Y.J.;J.G. Han
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2001.06a
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    • pp.73-73
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    • 2001
  • Boron-containing materials have several excellent properties, such as superlnardness, insulation and non-Rinear optical property. Recently, oxynitride compounds, such as Si(ON), Ti(ON), became the promising materials applied in diffusion barrier layer and solar cell. With the expectation of obtaining the hybrid property, we have firstly grown the BON thin film by radio frequency (R.F.) plasma enhanced metalorganic chemical vapm deposition (PEMOCVD) with 100 kHz frequency and trimethyl borate precursor. The plasma source gases used in this study were Ar and $H_2$, and two kinds of nhmgen source gases, $N_2$ and <$NH_3$, were also employed. The as-grown films were characterized by XPS, IR, SEM and Knoop microlhardness tester. The relationship between the films hardness and the growth rate indicated that the hardness of the film was dependent on several factors such as nitrogen source gas, substrate temperature and film thickness due to the variation of the composition and the structure of the film. Both nitrogen and carbon content could raise the film hardness, on which nitrogen content did stronger effect than carbon. The smooth morphology and continuous structure was benefit of obtaining high hardness. The maximum hardness of BON film was about 10 GPa.

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Do Inner Planets Modulate the Solar Wind Velocity at 1 AU from the Sun?

  • Kim, Jung-Hee;Chang, Heon-Young
    • Journal of Astronomy and Space Sciences
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    • v.31 no.1
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    • pp.1-6
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    • 2014
  • Quite recently, it has been suggested that the interaction of the solar wind with Mercury results in the variation in the solar wind velocity in the Earth's neighborhood during inferior conjunctions with Mercury. This suggestion has important implications both on the plasma physics of the interplanetary space and on the space weather forecast. In this study we have attempted to answer a question of whether the claim is properly tested. We confirm that there are indeed ups and downs in the profile of the solar wind velocity measured at the distance of 1 AU from the Sun. However, the characteristic attribute of the variation in the solar wind velocity during the inferior conjunctions with Mercury is found to be insensitive to the phase of the solar cycles, contrary to an earlier suggestion. We have found that the cases of the superior conjunctions with Mercury and of even randomly chosen data sets rather result in similar features. Cases of Venus are also examined, where it is found that the ups and downs with a period of ~ 10 to 15 days can be also seen. We conclude, therefore, that those variations in the solar wind velocity turn out to be a part of random fluctuations and have nothing to do with the relative position of inner planets. At least, one should conclude that the solar wind velocity is not a proper observable modulated by inner planets at the distance of 1 AU from the Sun in the Earth's neighborhood during inferior conjunctions.

Characteristics of Crystalline Silicon Solar Cells with Double Layer Antireflection Coating by PECVD (결정질 실리콘 태양전지의 이중 반사방지막 특성에 대한 연구)

  • Kim, Jin-Kuk;Park, Je-Jun;Hong, Ji-Hwa;Kim, Nam-Soo;Kang, Gi-Hwan;Yu, Gwon-Jong;Song, Hee-Eun
    • 한국태양에너지학회:학술대회논문집
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    • 2012.03a
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    • pp.243-247
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    • 2012
  • The paper focuses on an anti-reflection (AR) coating deposited by PECVD in silicon solar cell fabrication. AR coating is effective to reduce the reflection of the light on the silicon wafer surface and then increase substantially the solar cell conversion efficiency. In this work, we carried out experiments to optimize double AR coating layer with silicon nitride and silicon oxide for the silicon solar cells. The p-type mono crystalline silicon wafers with $156{\times}156mm^2$ area, 0.5-3 ${\Omega}{\cdot}cm$ resistivity, and $200{\mu}m$ thickness were used. All wafers were textured in KOH solution, doped with $POCl_3$ and removed PSG before ARC process. The optimized thickness of each ARC layer was calculated by theoretical equation. For the double layer of AR coating, silicon nitride layer was deposited first using $SiH_4$ and $NH_3$, and then silicon oxide using $SiH_4$ and $N_2O$. As a result, reflectance of $SiO_2/SiN_x$ layer was lower than single $SiN_x$ and then it resulted in increase of short-circuit current and conversion efficiency. It indicates that the double AR coating layer is necessary to obtain the high efficiency solar cell with PECVD already used in commercial line.

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Problems in Identification of ICMEs and Magnetic Clouds

  • Marubashi, Katsuhide;Kim, Yeon-Han;Cho, Kyung-Suk;Park, Young-Deuk;Choi, Kyu-Cheol;Baek, Ji-Hye;Choi, Seong-Hwan
    • The Bulletin of The Korean Astronomical Society
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    • v.35 no.2
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    • pp.46.1-46.1
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    • 2010
  • This work is a part of our project to establish a Website which provides a list of magnetic clouds (MCs) identified by WIND and ACE spacecraft. MCs are characterized by their magnetic fields that are well described by magnetic flux rope structures, whereas interplanetary coronal mass ejections (ICMEs) are interplanetary manifestations of coronal mass ejections (CMEs), usually identified by differences of plasma and magnetic field characteristics from those in the background solar wind. It is widely accepted that, while MCs are generally identified within ICMEs, the number of MCs are significantly lower than the number of ICMEs. In our effort to identify MCs, however, we have found that there was a big problem in identification method of MCs in previous works. Generally speaking, most of the previous surveys failed in identifying MCs which encounter the spacecraft at large distances from the MC axis, or near the surface of MC structures. In our survey, MCs are identified as the region of which magnetic fields are well described by appropriate flux rope models. Thus, we could selected over 45 MCs, in 1999 solar wind data for instance, while 33 ICMEs are listed in the Website of the ACE Science Center reported by Richardson and Cane.

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AAO 나노패턴을 응용한 실리콘 태양전지의 특성 연구

  • Choe, Jae-Ho;Lee, Jeong-Taek;Choe, Yeong-Ha;Kim, Geun-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.250-250
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    • 2009
  • The fabricated the nanostructural patterns on the surface of SiN antireflection layer of polycrystalline Si solar cell using anodic aluminum oxide (AAO) masks in an inductively coupled plasma(ICP) etching process. The AAO nanopattern mask has the hole size of about 70~75nm and lattice constant of 100~120nm. The transferred nano-patterns were observed by the scanning electron microscope (SEM). The voltage of patterned Si solar cell enhanced.

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OBSERVATIONS AND SPECTRAL ANALYSES OF SOLAR FLARES

  • DING M. D.
    • Journal of The Korean Astronomical Society
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    • v.36 no.spc1
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    • pp.49-54
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    • 2003
  • We introduce the two-dimensional spectral observations of solar flares using the Solar Tower Tele-scope of Nanjing University, China. In particular, we introduce three typical events and the methods used to analyze the data. (1) The flare of November 11, 1998, which is a limb flare. We derive the temperature and density within the flaring loop using non-LTE calculations. The results show that the loop top may be hotter and denser than other parts of the loop, which may be a result of magnetic reconnect ion above the loop. (2) The flare of March 10, 2001, which is a white-light flare that shows an emission enhancement at the near infrared continuum. We propose a model of non-thermal electron beam heating plus backwarming to interpret the observations. (3) The flare of September 29, 2002, which shows unusual line asymmetries at one flare kernel. The line asymmetries are caused by an upward moving plasma that is accelerated and heated during the flare development.

The effect incident angle of the Pt film on a counter electrode for dye-sensitized solar cells (염료감응형 태양전지의 상대전극 경사코팅을 통한 효율 개선 연구)

  • Lee, Kyoung-Jun;Seo, Hyun-Woong;Son, Min-Kyu;Hong, Ji-Tae;Kim, Hee-Je
    • 한국신재생에너지학회:학술대회논문집
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    • 2008.05a
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    • pp.419-421
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    • 2008
  • Sputter deposition on a Pt counter electrode was studied using RF plasma as the improvement of conversion efficiency for dye-sensitized solar cells (DSC). The effects of the sputtering thickness and incident angle on a Pt counter electrode for DSC was scrutinized. We conducted the experiment to get the optimal sputtering time for the performance of the DSC. Under the sputtering time condition of 120 seconds, we varied the incident angles of substrate from $0^{\circ}$ to $60^{\circ}$. Under standard test condition (AM 1.5, 100mW/$cm^2$), we obtained the maximum efficiency of 4.61% at the incident angle of $40^{\circ}$ with an active cell area of $1cm^2$.

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