• 한국기계가공학회지
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• 제18권12호
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• pp.82-90
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• 2019

This analysis demonstrates the effective removal of heat generated from a solar panel's output degradation factor solar cells (the solar panel's output deterioration factor), and solves the problems of oxidation and corrosion in existing metal heat sinks. The heat-dissipating test specimen was prepared using carbon materials; then, its thermal conductivity and its effectiveness in reducing temperatures were studied using heat transfer numerical analysis. As a result, the test specimen of the 30g/㎡ basis weight containing 80% of carbon fiber impregnated with carbon ink showed the highest thermal conductivity 6.96 W/(m K). This is because the surface that directly contacted the solar panel had almost no pores, and the conduction of heat to the panels appeared to be active. In addition, a large surface area was exposed to the atmosphere, which is considered advantageous in heat dissipation. Finally, numerical analysis confirmed the temperature reduction effectiveness of 2.18℃ in a solar panel and 1.08℃ in a solar cell, depending on the application of heat dissipating materials.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2007년도 제33회 하계학술대회 초록집
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• pp.377-377
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• 2007

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2009년도 춘계학술발표대회 논문집
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• pp.235-240
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• 2009

Crystlline silicon solar cells markets are increasing at rapid pace. now, crystlline silicon solar cells markets screen-printing solar cell is occupying. screen-printing solar cells manufacturing process are very quick, there is a strong point which is a low cost. but silicon and metal contact, uses Ag & Al pates. because of, high contact resistance, high series resistance and sintering inside process the electric conductivity decreases with 1/3. and In pastes ingredients uses Ag where $80{\sim}90%$ is metal of high cost. because of low cost solar cells descriptions is difficult. therefore BCSC(Buried Contact Solar Cell) is developed. and uses light-induced plating, ln-line galvanization developed equipments. Ni/Cu matel contact solar cells researches. in Germany Fraunhofer ISE. In order to manufacture high-efficiency solar cells, metal selections are important. metal materials get in metal resistance does small, to be electric conductivity does highly. efficiency must raise an increase with rise of the curve factor where the contact resistance of the silicon substrate and is caused by few with decrement of series resistance. Ni metal materials the price is cheap, Ti comes similar resistance. Cu and Ag has the electric conductivity which is similar. and Cu price is cheap. In this paper, Ni/Cu/Ag metal contact cell with screen printing manufactured, silicon metal contact comparison and analysis.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.346.1-346.1
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• 2014

Porous nano crystalline $TiO_2$ is currently used as a working electrode in a dye-sensitized solar cell (DSSC). The conventional working electrode is comprised of absorption layer (particle size:~20 nm) and scattering layer (particle size:~300 nm). We inserted window layer with 10 nm particle size in order to increase transmittance and specific surface area of $TiO_2$. The electrochemical impedance spectroscope analysis was conducted to analysis characterization of the electronic behavior. The Bode phase plot and Nyquist plot were interpreted to confirm the internal resistance caused by the insertion of window layer and carrier lifetime. The photocurrent that occurred in working electrode, which is caused by rise in specific surface area, increased. Accordingly, it was found that insertion of window layer in the working electrode lead to not only effectively transmitting the light, but also increasing of specific surface area. Therefore, it was concluded that insertion of window layer contributes to high conversion efficiency of DSSCs.

• 한국진공학회지
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• 제18권5호
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• pp.352-357
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• 2009

본 연구에서는 1.1 eV의 에너지대역을 흡수할 수 있는 InAs 양자점구조와 1.3 eV의 에너지 대역을 흡수 할 수 있는 InGaAs 양자우물구조를 이용한 텐덤형 태양전지의 구조를 1D poisson을 이용해 설계하고, 분자선 에피택시 장비를 이용하여 각각 5, 10, 15층씩 쌓은 양자점 및 양자우물구조를 삽입하여 p-n접합을 성장하였다. Photoluminescence (PL) 측정을 이용한 광학적특성 평가에서 양자점 5층 및 양자우물 10층을 삽입한 구조의 PL 피크가 가장 높은 상대발광강도를 나타냈으며, 각각 1.1 eV 및 1.3 eV에서 57.6 meV 및 12.37 meV의 Full Width at Half Maximum을 나타내었다. 양자점의 밀도 및 크기는 Reflection High-Energy Electron Diffraction system과 Atomic Force Microscope를 이용해 분석하였다. 그리고 GaAs/AlGaAs층을 이용한 터널접합에서는 I-V 측정을 통하여 GaAs층의 두께(20, 30, 50 nm)에 따른 터널링 효과를 평가하였다. GaAs 층의 두께가 30 nm 및 50 nm의 터널접합에서는 backward diode 특성을 나타낸 반면, 20 nm GaAs층의 GaAs/AlGaAs 터널접합에서는 다이오드 특성 곡선을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.450-451
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• 2008

비정질 실리콘 태양전지는 n-i-p형 구조가 일반적이며, 각 층의 두께와 도핑농도가 태양전지의 효율을 결정하는 중요한 요인이다. 최대의 효율을 얻을 수 있는 태양전지 설계를 위해 AFORS HET 시뮬레이션을 통하여 n층의 두께와 도핑농도, 그리고 p층의 도핑농도롤 변화시켰다. 최적화 결과, a-Si:H(n) 층의 두께 1nm, a-Si:H(n)층의 도핑농도 $2\times10^{20}cm^{-3}$, a-Si:H(p+)층의 도핑농도 $1\times10^{19}cm^{-3}$에서 $V_{oc}$=679.5mV, $J_{sc}$=39.02mA/$cm^2$, FF=83.71%, Efficiency=22.21%의 고효율을 얻을 수 있다. 본 연구를 통하여 실제의 높은 효율을 갖는 태양전지 설계와 제조 시에 이용할 수 있을 것이다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.61.1-61.1
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• 2010

$CuIn_{1-x}-GaxSe_2$ based materials with direct bandgap and high absorption coefficient are promising materials for high efficiency hetero-junction solar cells. CIGS champion cell efficiency(19.9%, AM1.5G) is very close to polycrystalline silicon(20.3%, AM1.5G). A reduction in the price of CIGS module is required for competing with well matured silicon technology. Price reduction can be achieved by decreasing the manufacturing cost and by increasing module efficiency. Manufacturing cost is mostly dominated by capital cost. Device properties of CIGS are strongly dependent on doping, defect chemistry and structure which in turn are dependent on growth conditions. The complex chemistry of CIGS is not fully understood to optimize and scale processes. Control of the absorber grain size, structural quality, texture, composition profile in the growth direction is important to achieving reliable device performance. In the present work, CIS nanoparticles were prepared by a simple wet chemical synthesis method and their structural and optical properties were investigated. XRD patterns of as-grown nanopowders indicate CIS(Cubic), $CuSe_2$(orthorhombic) and excess selenium. Further, as-grown and annealed nanopowders were characterized by HRTEM and ICP-OES. Grain growth of the nanopowders was followed as a function of temperature using HT-XRD with overpressure of selenium. It was found that significant grain growth occurred between $300-400^{\circ}C$ accompanied by formation of ${\beta}-Cu_{2-x}Se$ at high temperature($500^{\circ}C$) consistent with Cu-Se phase diagram. The result suggests that grain growth follows VLS mechanism which would be very useful for low temperature, high quality and economic processing of CIGS based solar cells.

• 전자공학회논문지
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• 제50권11호
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• pp.43-49
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• 2013

실리콘 태양전지 제조에 기판으로 사용되는 156 mm 실리콘 웨이퍼의 제작 공정에 적용하기 위한 오존수 세정 메커니즘에 대하여 연구하였다. 이를 위하여 생산 공정에 있어서 제품 불량 및 성능 저하를 유발하는 웨이퍼 표면 오염원을 분석하였으며, 이를 제거하기 위한 오존 세정공정에 대하여 실험하였다. 이 기술을 적용한 결과 미세입자는 94% 이상 제거 되었으며, 잔류 유기물도 45% 이상 더 제거되는 것으로 나타났다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.204-205
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• 2011

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.

• 한국항행학회논문지
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• 제14권3호
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• pp.426-431
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• 2010

태양전지용 웨이퍼 제조공정에 있어 Slurry의 가격 비중은 약 68% 정도로 매우 큰 비중을 차지하고 있기 때문에, 제조비용 절감측면과 Wafering 원가혁신 및 산업폐기물 처리비용 절감효과, 환경오염 방지를 위해 Slurry의 순환 사용은 필수적이다. 기존 Slurry를 재생하는 방식은 물리적인 원심분리(데칸터) 방식을 이용한 방법을 사용하고 있으나 미분(微粉)이 남아 있어 재생품질에 한계가 있고, 대부분 액체, 100% 오일과 분리되지 않은 상태로 재생된다. 이 상태를 건조시키는 경우도 순도가 많이 떨어진다. 본 논문에서는 원심분리(데칸터) 방식과 케미컬 방식을 함께 사용하여, 태양전지 Wafering 공정에서 필수적인 Slurry를 재생함에 있어, 원심분리에 의한 재생품질의 한계를 극복할 수 있는 재생기술을 개발하였고, Slurry 재생에 대한 Total Solution을 제공하여 성능을 향상시키고 재생 회수율을 높였다.