• Title/Summary/Keyword: sol-gel growth

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Properties of TiO2 thin films fabricated with surfactant by a sol-gel method (Sol-gel 법에 의하여 제조된 계면활성제 첨가 TiO2 박막 특성)

  • Kim, Jin-Ho;Jung, Hyun-Ho;Hwang, Jong-Hee;Cho, Yong-Seok;Lim, Tae-Young
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.20 no.6
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    • pp.267-271
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    • 2010
  • Super hydrophilic and high transparent $TiO_2$ thin films were successfully fabricated by sol-gel method without an irradiation of UV light. In addition, surfactant Tween 80 was used for increasing the transmittance of the thin films. When the contents of Tween 80 in $TiO_2$ solution were 0.0, 1.0, 3.0, 5.0 wt%, the transmittance of $TiO_2$ thin films was ca. 74.31%, 74.25%, 79.69%, 81.99% at 550 nm wavelength, respectively. The contact angles of fabricated $TiO_2$ thin films with or without Tween 80 were from ca. $4.0^{\circ}$ to $4.5^{\circ}$. The $TiO_2$ thin films annealed over $400^{\circ}C$ showed anatase crystal structure and the photocatalytic property that decomposed methyl orange with UV irradiation. The surface morphologies, optical properties and contact angle of prepared thin films with different contents of Tween 80 were evaluated by field emission scanning electron microscope (FE-SEM), X-ray diffratometer (XRD), UV-Vis spectrophotometer and contact angle meter.

Characterization and deposition of Cu2ZnSnS4 film for thin solar cells via sol-gel method (Sol-gel법에 의한 박막태양전지용 Cu2ZnSnS4 박막의 증착과 특성)

  • Kim, Gwan-Tae;Lee, Sang-Hyun;Park, Byung-Ok
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.22 no.3
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    • pp.127-133
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    • 2012
  • To achieve low-cost and high-efficiency of thin-film solar cells applications, the sol-gel method that can be coated on a large area substrate, obtain homogeneous thin films of high purity was used. We studied structural and optical characteristics versus annealing temperature of $Cu_2ZnSnS_4$ which has kesterite structure by substitution low-cost sulfur (S) instead of high-cost selenium (Se). By analyzing XRD patterns, main peak was observed at $2{\theta}=28.5^{\circ}$ when Zn/Sn ratio is 0.8/1.2. And when we observed kesterite structure which has orientation of (112) direction, the more annealing temperature increase the bigger strength of (112) direction is. $Cu_2ZnSnS_4$ thin film showed characteristics of kesterite structure at $550^{\circ}C$. And when we calculated lattice constant, a = 5.5047 and $c=11.014{\AA}$ as same JCPDS (Joint Committee on Powder Standards) data measured. We measured optical transmittance to analyze optical characteristics. Optical transmittance was lower than 65 % at visible ray (${\lambda}=380{\sim}770nm$).

Properties of $TiO_2$ thin film coated on $SnO_2$ thin films by sol-gel method (Sol-gel 법에 의해 $SnO_2$계 박막위에 코팅된 $TiO_2$ 박막의 특성)

  • Lim, Tae-Young;Cho, Hye-Mi;Kim, Jin-Ho;Hwang, Jong-Hee;Hwang, Hae-Jin
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.19 no.5
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    • pp.256-261
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    • 2009
  • Hydrophilic and transparent $TiO_2$ thin film was fabricated by sol-gel method and the properties of contact angle, surface morphology, and transmittance were measured. In addition, surfactant Tween 80 was used for increasing the hydrophilic property of thin film. When the contents of Tween 80 in $TiO_2$ solution was 0, 10, 30, 50wt%, the contact angles of $TiO_2$ thin film were $41.4^{\circ}$, $18.2^{\circ}$, $16.0^{\circ}$, $13.2^{\circ}$, respectively. Fabricated $TiO_2$ thin film showed the photocatalytic property that decomposed methylene blue and decreased the absorbance of solution after UV irradiation. $TiO_2$ thin films fabricated with the solution of 30 wt% Tween 80 were deposited on glass (bare), antimony tin oxide (ATO), fluorine tin oxide (FTO), indium tin oxide (ITO) coated glass substrates, and the contact angle and transmittance of thin film was measured. The contact angles of thin films deposited on four substrates were $16.2\sim27.1^{\circ}$ and was decreased to the range of $13.2\sim17.6^{\circ}$ after UV irradiation, Especially, the thin films coated on ATO and FTO glass substrate showed high transmittance of 74.6% in visible range, respectively, and low transmittance of 54.2% and 40.4% in infrared range, respectively.

Mössbauer Spectroscopic Studies of NiZn Ferrite Prepared by the Sol-Gel Method

  • Niyaifar, Mohammad;Mohammadpour, Hory;Rodriguez, Anselmo F.R.
    • Journal of Magnetics
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    • v.20 no.3
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    • pp.246-251
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    • 2015
  • This study was aimed to study the effect of Zn content on the hyperfine parameters and the structural variation of $Ni_{1-x}Zn_xFe_2O_4$ for x = 0, 0.2, 0.4, 0.6, and 0.8. To achieve this, a sol-gel route was used for the preparation of samples and the obtained ferrites were investigated by X-ray diffraction, scanning electron microscopy, and $M{\ddot{o}}ssbauer$ spectroscopy. The formation of spinel phase without any impurity peak was identified by X-ray diffraction of all the samples. Moreover, the estimated crystallite size by X-ray line broadening indicates a decrease with increasing Zn content. This result was in agreement with the scanning electron microscopy result, indicating the reduction in grain growth with further zinc substitution. The room-temperature $M{\ddot{o}}ssbauer$ spectra show that the hyperfine fields at both the A and B sites decreased with increasing Zn content; however, the rate of reduction is not the same for different sites. Moreover, the best fit parameter showed that the quadrupole splitting values of B site increased from the pure nickel ferrite to the sample with x = 0.8.

Growth of Textured CoFe2O4 Thin Films on Platinized Silicon Prepared by a Sol-Gel Method

  • Mustaqima, Millaty;Lee, Min Young;Kim, Deok Hyeon;Lee, Bo Wha;Liu, Chunli
    • Journal of Magnetics
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    • v.19 no.3
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    • pp.227-231
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    • 2014
  • We fabricated textured polycrystalline $CoFe_2O_4$ thin films on $Pt(111)/TiO_2/SiO_2/Si$ substrate through a sol-gel method. We varied the thickness of the films, by using precursor solutions with different concentrations of 0.1, 0.2, and 0.3 M, and by depositing 5, 8, or 10 layers on the substrate by spin-coating. X-ray diffraction spectra indicated that when the precursor concentration of the solution was higher than 0.1 M, the spin-coated films were preferentially oriented in the <111> direction. Inspection of the surface morphology by scanning electron microscopy revealed that $CoFe_2O_4$ thin films prepared with 0.2 M solution and 5-time spin-coatings had smoother surface, as compared to the other conditions. Each coating had an average thickness of about 50 nm. The magnetic properties measured by vibrating sample magnetometer showed magnetic anisotropy, as evidenced from the difference in the in-plane and out-of-plane hysteresis loops, which we attributed to the textured orientation of the $CoFe_2O_4$ thin films.

Preparation of $Al_2O_3-TiO_2$ Composite Powder from Alkoxides (I) 1. Preparation of $Al_2TiO_5$ by the SOl-gel Method and the effects of Additives (알콕사이드로부터 $Al_2O_3-TiO_2$계 복합분체의 합성(I) 1. Sol-Gel법에 의한 $Al_2TiO_5$ 분말합성과 첨가제의 영향)

  • 정종열;이형민;이홍림
    • Journal of the Korean Ceramic Society
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    • v.33 no.10
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    • pp.1138-1146
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    • 1996
  • Al2TiO5 powder was prepared by the sol-gel processing from th metal alkoxides ; aluminium sec-butoxide (Al(OC4H9)3 and tetraethyl orthotitanate (Ti(OC2H5)4) The particles of Al2TiO5 produced from alkoxides were measured to be below $1.5mutextrm{m}$ and mre than 90% weere below 1 ${\mu}{\textrm}{m}$ however those from commercial alumina and titania were over 0.5-7${\mu}{\textrm}{m}$ and only 60% were below 1${\mu}{\textrm}{m}$ and 90% were below 2.5${\mu}{\textrm}{m}$ Therefore Al2TiO5 powder produced from alkoxides had the narrower distributionin size than that produced from the commercial alumina and titania powders. The addition of mullite or Al2O3 powder to the prepared aluminum titanate inhibited the grain growth and this resulted in decreased and increase in density.

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Crystallographic and Mossbauer Studies of Magnetic Garnet $Y_{3-x}Bi_xFe_5O_{12}$ by a Sol-Gel Method (Sol-gel 합성에 의한 자성 garnet $Y_{3-x}Bi_xFe_5O_{12}$의 결정학적 및 Mossbauer 분광학 연구)

  • 엄영란;김철성;이재광
    • Journal of the Korean Magnetics Society
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    • v.8 no.4
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    • pp.203-209
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    • 1998
  • Crystallographic and magnetic properties of single phase garnet $Y_{3-x}Bi_xFe_5O_{12}$ (x=0.0, 0.25, 0.5, 0.75, 1.0) were studied by using x-ray diffraction, Mossbauer spectroscopy and vibrating sample magnetometer (VSM). Ultra-fine polycrystalline cubic samples have been prepared by sol-gel method. The lattice constant increase linearly with increasing an amount of Bi. Annealing temperature was larger than 800 $^{\circ}C$ for the growth of a single-phase garnet powder. The second phase of garnet, $(BiFeO_3)$, was at 1000 $^{\circ}C$ for x=0.75, and 950 $^{\circ}C$ for x=1.00. From Mossbauer spectroscopy and VSM measurements, the magnetization and the coercivity were decreased and the Curie temperature $Y_{3-x}Bi_xFe_5O_{12}$(x=0.0, 0.25, 0.5, 0.75, 1.0) was slightly increased as increasing the Bi content.

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Physical Properties of ZnO Thin Films Grown by Sol-Gel Process with Different Preheating Temperatures (예열 온도 변화에 따른 Sol-Gel 법에 의해 제작된 ZnO 박막의 물리적 특성 연구)

  • 김익주;한호철;이충선;송용진;태원필;서수정;김용성
    • Journal of the Korean Ceramic Society
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    • v.41 no.2
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    • pp.136-142
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    • 2004
  • A homogeneous and stable ZnO sol was prepared by dissolving the zinc acetate dihydrate(Zn(CH$_3$COO)$_2$$.$2H$_2$O) in solution of isopropanol((CH$_3$)$_2$$.$CHOH) and monoethanolamine(MEA:H$_2$NCH$_2$CH$_2$OH). ZnO thin films were prepared by sol-gel spin-coating method and investigated for c-axis preferred orientation and physical properties with preheating temperature. The c-axis growth had a difference as increaing preheating temperature. ZnO thin film preheated at 275$^{\circ}C$ and post-heated at 650$^{\circ}C$ was highly oriented along the (002) plane. After preheating at 200∼300$^{\circ}C$ and post-heating at 650$^{\circ}C$, the transmittance of ZnO thin films by UV-vis. measurement was over 85% in visible range and exhibited absorption edges at about 370 nm. The optical band gap energy was obtained about 3.22 eV, The photoluminescence emission characteristics of ZnO thin film preheated at 275$^{\circ}C$ and post-heated at 650$^{\circ}C$ was found to orange emission(620 nm, 2.0 eV) by PL measurement, which revealed the possibility for application of inorganic photoluminescence device.

A Study of Crystallization and Fracture Toughness of Glass Ceramics in the $ZrO_2.SiO_2$ Systems Prepared by the Sol-Gel Method (졸-겔법으로 제조한 $ZrO_2.SiO_2$계 결정화유리의 결정화 및 파괴인성에 관한 연구)

  • 신대용;한상목;강위수
    • Journal of the Korean Ceramic Society
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    • v.37 no.1
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    • pp.50-56
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    • 2000
  • Precursor gels with the composition of xZrO2·(100-x)SiO2 systems (x=10, 20 and 30 mol%) were prepared by the sol-gel method. Kinetic parameters, such as activation energy, Avrami's exponent, n, and dimensionality crystal growth value, m, have been simultaneously calculated from the DTA data using Kissinger and Matusita equations. The crystallite size dependence of tetragonal to monoclinic transformation of ZrO2 was investigated using XRD, in relation to the fracture toughness. The crystallization of tetragonal ZrO2 occurred through 3-dimensional diffusiion controlled growth(n=m=2) and the activation energy for crystallization was calculated using Kissinger and Matusita equations, as about 310∼325±10kJ/mol. The growth of t-ZrO2, in proportion to the cube of radius, increased with increasing heating temperature and hteat-treatment time. It was suggested that the diffusion of Zr4+ ions by Ostwald ripening was rate-limiting process for thegrowth of t-ZrO2 crystallite size. The fracture toughness of xZrO2·(100-x)SiO2 systems glass ceramics increased with increasing crystallite size of t-ZrO2. The fracture toughness of 30ZrO2·70SiO2 system glass ceramics heated at 1,100℃ for 5h was 4.84 MPam1/2 at a critical crystaliite size of 40 nm.

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Characteristics of Al-doped ZnO thin films prepared by sol-gel method (졸-겔법으로 제조한 Al-doped ZnO 박막의 특성에 관한 연구)

  • Kim, Yong-Nam;Lee, Seoung-Soo;Song, Jun-Kwang;Noh, Tai-Min;Kim, Jung-Woo;Lee, Hee-Soo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.18 no.1
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    • pp.50-55
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    • 2008
  • AI-doped ZnO(AZO) thin films have been fabricated on glass substrate by sol-gel method, and the effect of Al precursors and post-annealing temperature on the characteristics of AZO thin films was investigated. The sol was prepared with zinc acetate, EtOH, MEA and Al precursors. In order to dope Al in ZnO, two types of aluminum nitrate and aluminum chloride were used as Al precursor. Zinc concentration was 0.5 mol/l and the content of Al precursor was 1 at% of Zn in the sol. The sol was spin-coated on glass substrate, and the coated films were annealed at 550ue for 2 hand were post-annealed at temperature ranges of $300{\sim}500^{\circ}C$ for 2 h in reducing atmosphere ($N_2/H_2$= 9/1). Structural, electrical and optical propertis of the fabricated AZO thin films were analyzed by XRD, FE-SEM, AFM, hall effect measurement system and UV-visible spectroscopy. Optical and electrical properties of AZO thin films prepared with aluminum nitrate as Al precursor were better than those of films prepared with aluminum chloride. The electrical resistivity and the optical transmittance of films decreased with increasing post-annealing temperatures. The minimum electrical resistivity of $2{\times}10^{-3}$ and the maximum optical transmittance of 91% were obtained for the AZO thin films post-annealed at $550^{\circ}C\;and\;300^{\circ}C$, respectively.