• Advances in Computational Design
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• v.5 no.1
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• pp.13-34
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• 2020

As small size and complex metal machining components demand increases, cutting processes in microscale become necessary. Ball-end milling is a commonly used finishing process, which nowadays can be applied in the microscale size. Surface quality and dimensional accuracy are two basic parameters that affect small size components in their assembly and functionality. Thus, good quality can be achieved by optimizing the cutting conditions of the procedure. This study presents a 3D simulation model of ball-end milling in microscale developed in a commercial CAD software and its optical and computing results. These carried out results are resumed to surface topomorphy, surface roughness, chip geometry and cutting forces calculations that arising during the cutting process. A great number of simulations were performed in a milling machine centre, applying the discretized kinematics of the procedure and the final results were compared with measurements of Al7075-T651 experiments.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.854-857
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• 2005

We developed new circuit architecture for reducing the power consumption and chip-size of driver ICs. In this paper we describe a new drive scheme, based on the concept of time -sharing output and optimal circuit design based on color resolution. In case of 132 x 176-pixel class, we used only 8 O p-A mps for a 262-k color display.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.782-785
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• 2002

Power amplifier of wireless communication tranceiver can be effectually controlled output power. And small size and low power dissipation are indispensable to portable system. In this paper, to reduce the size of portable tranceiver, inductor is integrated in a single chip. And to reduce power dissipation, a power amplifier that can be digitally controlled output power, is proposed and designed.

• ETRI Journal
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• v.32 no.2
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• pp.327-329
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• 2010

A fully integrated small form-factor HBT power amplifier (PA) was developed for UMTS Tx applications. For practical use, the PA was implemented with a well configured bottom dimension, and a CMOS control IC was added to enable/disable the HBT PA. By using helix-on-pad integrated passive device output matching, a chip-stacking technique in the assembly of the CMOS IC, and embedding of the bulky inductive lines in a multilayer substrate, the module size was greatly reduced to 2 mm ${\times}$ 2.2 mm. A stage-bypass technique was used to enhance the efficiency of the PA. The PA showed a low idle current of about 20 mA and a PAE of about15% at an output power of 16 dBm, while showing good linearity over the entire operating power range.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.609-610
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• 2006

A 77GHz MMIC transceiver module consisting of a power amplifier, a low noise amplifier, a drive amplifier, a frequency doubler and a down-mixer has been developed for automotive forward-looking radar sensor. The MMIC chip set was fabricated using $0.15{\mu}m$ gate-length InGaAs/InAlAs/GaAs mHEMT process based on 4-inch substrate. The power amplifier demonstrated a measured small signal gain of over 20dB from $76{\sim}77GHz$ with 15.5dBm output power. The chip size is $2mm{\times}2mm$. The low noise amplifier achieved a gain of 20dB in a band between $76{\sim}77\;GHz$ with an output power of 10dBm. The chip size is $2.2mm{\times}2mm$. The driver amplifier exhibited a gain of 23dB over a $76{\sim}77\;GHz$ band with an output power of 13dBm. The chip size is $2.1mm{\times}2mm$. The frequency doubler achieved an output power of -16dBm at 76.5GHz with a conversion gain of -16dB for an input power of 10dBm and a 38.25GHz input frequency. The chip size is $1.2mm{\times}1.2mm$. The down-mixer demonstrated a measured conversion gain of over -9dB. The chip size is $1.3mm{\times}1.9mm$. The transceiver module achieved an output power of 10dBm in a band between $76{\sim}77GHz$ with a receiver P1dB of -28dBm. The module size is $8{\times}9.5{\times}2.4mm^3$. This MMIC transceiver module is suitable for the 77GHz automotive radar systems and related applications in W-band.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2001.11a
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• pp.77-81
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• 2001

This paper proposed a novel chip type ceramic dielectric antenna by using the advanced meander line technique that the radiational metals are formed on the face of ceramic dielectric(8 ${\times}$ 4 ${\times}$ 1.5 mm, alumina) and both facses of substrate(1.0 mm thickness, FR-4). The performance of the antenna model has a good agreements between measurements and computed results. Resultly, it has a 10 dB return-loss bandwidth(2.4～2.4835 GHz) and 1.7 dBi measured radiation gain for Bluetooth application. The proposed antenna model can overcome the problems of the radiation gain from the small antenna's size.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.34-42
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• 2000

Recently, there is a growing need to develope small-size RF chip inductors operating to GHz to realize high-performance, micro-fabricated wireless communication products. For the development of high-performance RF chip inductors, however, the ferrite-based chip inductors can not be used above 300MHz due to the limitation of the permeability of this material. In this work, small-size, high-performance RF chip inductors utilizing amorphous $Al_2O_3$ core material were investigated. Copper (Cu) with 40${\mu}m$ diameter was used as the coils and the chip inductor size fabricated in this work is $2.1mm{\times}1.5mm{\times}1.0mm$. The external current source was applied after bonding Cu coil leads to gold pads electro-plated on the bottom edges of a core material. The composition of core materials was measured using a EDX. High frequency characteristics of the inductance (L), quality factor (Q), and impedance (Z) of developed inductors were measured using an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). The developed inductors have the self-resonant frequency (SRF) of 1 to 3.5 GHz and exhibit L of 22 to 150 nH. The L of the inductors decreases with increasing the SRF. The Z of the inductors has the maximum value at the SRF and the inductors have the quality factor of 70 to 97 in the frequency range of 500 MHz to 1.5 GHz.

• Elastomers and Composites
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• v.58 no.2
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• pp.87-94
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• 2023

Abrasion tests of an SBR compound were conducted using four different types of abrasion testers (cut and chip, Lambourn, DIN, and LAT100). The abrasion test results were analyzed in terms of size distributions and morphologies of the wear particles. Most wear particles were larger than 1000 ㎛. The wear particle size distributions tended to decrease as the particle size decreased. Except for the Lambourn abrasion test, the wear particles smaller than 212 ㎛ were rarely generated by the other three abrasion tests, implying that small wear particles were produced through friction by introducing talc powder. Shapes of the wear particles varied depending on the abrasion testers. The wear particles generated from the Lambourn abrasion tester had stick-like shapes. The cut and chip abrasion test showed a clear abrasion pattern, but the DIN abrasion test did not show any specific abrasion pattern. The Lambourn and LAT100 abrasion tests showed irregular abrasion patterns.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1663-1667
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• 2003

This thesis is on tile development of LD(Laser Diode) chip tester and the control system based on graphical programming language(LabVIEW) to control the equipment. The LD chip tester is used to test the optic power and the optic spectrum of the LD Chip. The emitter size of LD chip and the diameter of the receiver(optic fiber) are very small. Therefore, in order to test each chip precisely, this tester needs high accuracy. However each motion part of the tester could not accomplish hish accuracy due to the limit of the mechanical performance. Hence. an image processing with machine vision was carried out in order to compensate for the error. and also a load test was carried out so as to reduce tile impact of load on chip while the probing motion device is working. The obtained results were within ${\pm}$5$\mu\textrm{m}$ error.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.481-485
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• 1987

The fabrication of a micro mass flow sensor on a silicon chip by means of micro-machining technology is described on this paper. The operation of micro mass flow sensor is based on the heat transfer from a heated chip to a fluid. The temperature differences on the chip is a measure for the flow velocity in a plane parallel with the chip surface. An anisotropic etching technigue was used for the formation of the V-type groove in this fabrication. The micro mass flow sensor is made up of two main parts ; A thin glass plate embodying the connecting parts and mass flow sensor parts in silicon chip. This sensor have a very small size and a neglible dead space. Micro mass flow sensor can fabricate on silicon chip by micro machining technology too.