• Title/Summary/Keyword: slurry stability

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Effect of Surfactant on the Dispersion Stability of Slurry for Semiconductor Silicon CMP (계면활성제가 반도체 실리콘 CMP용 슬러리의 분산안정성에 미치는 영향)

  • Yun, Hye Won;Kim, Doyeon;Han, Do Hyung;Kim, Dong Wan;Kim, Woo-Byoung
    • Journal of Powder Materials
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    • v.25 no.5
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    • pp.395-401
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    • 2018
  • The improvement of dispersion stability for the primary polishing slurry in a CMP process is achieved to prevent defects produced by agglomeration of the slurry. The dispersion properties are analyzed according to the physical characteristics of each silica sol sample. Further, the difference in the dispersion stability is confirmed as the surfactant content. The dispersibility results measured by Zeta potential suggest that the dispersion properties depend on the content and size of the abrasive in the primary polishing slurry. Moreover, the optimum ratio for high dispersion stability is confirmed as the addition content of the surfactant. Based on the aforementioned results, the long-term stability of each slurry is analyzed. Turbiscan analysis demonstrates that the agglomeration occurs depending on the increasing amount of surfactant. As a result, we demonstrate that the increased particle size and the decreased content of silica improve the dispersion stability and long-term stability.

Effect of Recycling Time on Stability of Colloidal Silica Slurry and Removal Rate in Silicon Wafer Polishing (연마 Recycling 시간에 따른 콜로이드 실리카 슬러리의 안정성 및 연마속도)

  • Choi, Eun-Suck;Bae, So-Ik
    • Journal of the Korean Ceramic Society
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    • v.44 no.2 s.297
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    • pp.98-102
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    • 2007
  • The stability of slurry and removal rate during recycling of colloidal silica slurry was evaluated in silicon wafer polishing. The particle size distribution, pH, and zeta potential were measured to investigate the stability of colloidal silica. Large particles appeared as recycling time increased while average size of slurry did not change. Large particles were identified by EDS(energy dispersive spectrometer) as foreign substances from pad or abraded silicon flakes during polishing. As the recycling time increased, pH of slurry decreased and removal rate of silicon reduced but zeta potential decreased inversely. Hence, it could be mentioned that decrease of removal rate is related to consumption of $OH^-$ ions during recycling. Attention should be given to the control of pH of slurry during polishing.

Face Stability Assessment of Slurry-shield Tunnels - Concentrating on Slurry Clogging Effect - (슬러리 쉴드 터널의 막장 안정성 평가 - 슬러리의 폐색효과를 중심으로 -)

  • Lee, In-Mo;Lee, Sam;Cho, Kook-Hwan
    • Journal of the Korean Geotechnical Society
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    • v.20 no.6
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    • pp.95-107
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    • 2004
  • In this paper, the rheological characteristics of slurry used fur slurry-shield tunnels were studied with emphasis on penetration characteristics. The slurry penetration was modeled by soil-filter clogging theory. The coefficient of particle deposition was suggested as an indicator of sin clogging during tunnel construction and calculated through model tests. The measured slurry weight, clogged in the base soil, was compared with the value obtained from clogging theory. Based on the testing results, a stability analysis of a tunnel face was performed to pinpoint the most influential factor affecting stability of slurry-shield tunnels. It was found that the stability of tunnel face is dependent on the ratio of infiltration velocity to the coefficient of particle deposition, and the penetration distance of slurry increases with the ratio of infiltration velocity to the coefficient of particle deposition. Since the stability of tunnel face decreases with the slurry penetration distance, it was necessary to add some additives in order to reduce the slurry penetration distance. It was found that the ground condition needs additives when the soil has the effective particle diameter$(D_{10})$ larger than 0.75mm. It was also found that the tunnel face stability due to slurry penetration is significantly affected by the tunnel advance rate.

Effect of Anionic Polyelectrolyte on Alumina Dispersions for Ru Chemical Mechanical Polishing

  • Venkatesh, R. Prasanna;Victoria, S. Noyel;Kwon, Tae-Young;Park, Jin-Goo
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.24.2-24.2
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    • 2011
  • Ru is used as a bottom electrode capacitor in dynamic random access memories (DRAMs) and ferroelectric random access memories (FRAMs). The surface of the Ru needs to be planarized which is usually done by chemical mechanical polishing (CMP). Ru CMP process requires chemical slurry consisting of abrasive particles and oxidizer. A slurry containing NaIO4 and alumina particles is already proposed for Ru CMP process. However, the stability of the slurry is critical in the CMP process since if the particles in the slurry get agglomerated it would leave scratches on the surface being planarized. Thus, in the present work, the stability behavior of the slurry using a suitable anionic polyelectrolyte is investigated. The parameters such as slurry pH, polyelectrolyte concentration, adsorption time and the sequence of addition of chemicals are optimized. The results show that the slurry is stable for longer time at an optimized condition. The polishing behavior of the Ru using the optimized slurry is also investigated.

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Effect of the Physical Property of Insulator on the Slurry Stability (슬러리의 안정화가 애자의 물리적 특성에 미치는 영향)

  • 안용호;최연규;송병기;한병성
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.12
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    • pp.979-986
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    • 2001
  • This paper was researched the effect of slurry stability on the mechanical and electrical property of the porcelain insulator with various raw materials such as feldspar, quartz, clay and l7wt% alumina. The slurry was fabricated after ball milling the mixed raw materials. Green compacts were made by the extrusion and were sintered at 1300$\^{C}$ for 60min in the tunnel kiln. All of the specimens were densified 96% of the theoretical density. The 3-point flexural strength($\sigma$$\_$B/) of the specimen stabilized slurry pH 7.8 was 1650 k9/㎠ and the vickers hardness(Hv) and the fracture toughness(K$\_$IC/) were 27.5 GPa and 2.2 MPa$.$m$\^$$\sfrac{1}{2}$/, respectively. The mechanical properties of the specimen stabilized slurry PH 9.3 were 1716 kg/㎠($\sigma$$\_$B/), 27.6 GPa(Hv) and 3.0 MPa$.$m$\^$$\sfrac{1}{2}$/(K$\_$IC/), respectively. The dielectric strength was increased from 8.3kV/mm to 13.2kV/mm as the increase of the slurry pH from 7.8 to 9.3. Therefore the physical properties of the specimen stabilized slurry pH 9.3 were improved.

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Research on the Dispersion Stability and Scale up of Carbon Slurry Fuel (카본슬러리 연료의 분산안정성 개선 및 scale up 제조 연구)

  • Cho, Min-Ho;Yang, Mun-Kyu;Lee, Ik-Mo;Cho, Joon-Hyun;Kwon, Tae-Soo;Jeong, Byung-Hun;Han, Jeong-Sik
    • Journal of the Korean Society of Propulsion Engineers
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    • v.13 no.3
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    • pp.34-40
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    • 2009
  • For the preparation of carbon-slurry fuel, the effects of process parameters on the carbon dispersion stability in the liquid fuel have been investigated. The dispersion stability of carbon-slurry fuels could be monitored by measurements of particle size and carbon contents in the different positions, and observation of dispersion states after centrifuging. Through the application of various additives, it was found that NB463S84 based on polyolefin succinimde showed the best dispersion and longest stability life of carbon-slurry fuel. Also, PIBSI (polyisobutenyl succimide) with the similar functional groups to NB463S84 was effectively synthesized and same dispersion stability was verified by application to carbon-slurry fuel. Finally, the possibility of practical use of carbon-slurry fuels was confirmed by application of the mixing conditions obtained from g scale to kg scale preparation.

Stability of H2O2 as an Oxidizer for Cu CMP

  • Lee, Do-Won;Kim, Tae-Gun;Kim, Nam-Hoon;Kim, Sang-Yong;Chang, Eui-Goo
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.1
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    • pp.29-32
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    • 2005
  • Chemical mechanical polishing is an essential process in the production of copper-based chips. On this work, the stability of hydrogen peroxide ($H_{2}O_{2}$) as an oxidizer of copper CMP slurry has been investigated. $H_{2}O_{2}$ is known as the most common oxidizer in copper CMP slurry. But $H_{2}O_{2}$ is so unstable that its stabilization is needed using as an oxidizer. As adding KOH as a pH buffering agent, stability of $H_{2}O_{2}$ decreased. However, $H_{2}O_{2}$ stability in slurry went up with putting in small amount of BTA as a film forming agent. There was no difference of $H_{2}O_{2}$ stability between pH buffering agents KOH and TMAH at similar pH value. Addition of $H_{2}O_{2}$ in slurry in advance of bead milling led to better stability than adding after bead milling. Adding phosphoric acid resulted in the higher stability. Using alumina C as an abrasive was good at stabilizing for $H_{2}O_{2}$.

Application of Hydrogen Peroxide for Alumina Slurry Stability in Cu CMP (구리CMP공정시 알루미나 슬러리 안정성을 위한 Hydrogen peroxide의 적용)

  • Lee, Do-Won;Kim, Nam-Hoon;Kim, In-Pyo;Kim, Sang-Yong;Kim, Tae-Hyoung;Seo, Yong-Jin;Chang, Eui-Goo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.136-139
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    • 2003
  • Copper has attractive properties as a multi-level interconnection material due to lower resistivity and higher electromigration resistance as compared with Alumina and its alloy with Copper(0.5%). Among a variety of agents in Copper CMP slurry, $H_2O_2$ has commonly been used as the oxidizer However. $H_2O_2$ is so unstable that it requires stabilization to use as oxidizer Hence, stabilization of $H_2O_2$ is a vital process to get better yield in practical CMP process. In this article the stability of Hydrogen Peroxide as oxidizer of Copper CMP slurry has been investigated. When alumina abrasive was used, $\gamma$-particle Alumina C had a better stability than $\alpha$-particle abrasive. As adding KOH as pH buffering agent, $H_2O_2$ stability in slurry decreased. Urea hydrogen peroxide was used as oxidizer, an enhanced stability was gotten. When $H_3PO_4$ as $H_2O_2$ stabilizer was added, the decrease of $H_2O_2$ concentration in slurry became slower. Even though adding $H_2O_2$ in slurry after bead milling lead to better stability than in advance of bead milling, it had a lower dispersibility.

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A Study on the Dispersion Stability of Aluminum Slurry Fuel (알루미늄 슬러리 연료의 분산안정성 연구)

  • Cho, Min-Ho;Yang, Mun-Kyu;Jeong, Byung-Hun;Han, Jeong-Sik;Lee, Ik-Mo
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 2009.05a
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    • pp.163-166
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    • 2009
  • For the preparation of Aluminum-slurry fuel, the effects of process parameters on the aluminum dispersion stability in the liquid fuel have been investigated. The dispersion stability of aluminum-slurry fuels could be monitored by measurements through Turbiscan using the scattering of the Laser. Through the application of various additives, TPAB (Tetrapropyl ammonium bromide) showed more reasonable performance than others.

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Optimization of Removal Rates with Guaranteed Dispersion Stability in Copper CMP Slurry

  • Kim Tae-Gun;Kim Nam-Hoon;Kim Sang-Yong;Chang Eui-Goo
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.6
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    • pp.233-236
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    • 2004
  • Copper metallization has been used in high-speed logic ULSI devices instead of the conventional aluminum alloy metallization. One of the key issues in copper CMP is the development of slurries that can provide high removal rates. In this study, the effects of slurry chemicals and pH for slurry dispersion stability on Cu CMP process characteristics have been performed. The experiments of copper slurries containing each different alumina and colloidal silica particles were evaluated for their selectivity of copper to TaN and $SiO_{2}$ films. Furthermore, the stability of copper slurries and pH are important parameters in many industries due to problems that can arise as a result of particle settling. So, it was also observed about several variables with various pH.