• Bulletin of the Korean Chemical Society
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• 제19권4호
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• pp.444-449
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• 1998

The kinetics of the formation of triplex $poly(dA){\cdot}[poly(dT)]_2$ from poly(dA)·poly(dT) and poly(dT) is examined by various optical spectroscopic methods, including absorption, circular and linear dichroism (LD) spectroscopy. In the pseudo first order condition, where the poly(dT) concentration is kept lower than that of duplex, the association of the poly(dT) is enhanced by the presence of ethidium; the rate constant is proportional to the amount of ethidium in the mixture. When the concentration of the duplex and the single strand is the same, a spectral change is explained by double exponential curves, indicating that at least two steps are involved, the fast association and slow rearrangement steps. In contrast to the pseudo first order kinetics, the association step in an equimolar condition is not affected by the presence of ethidium. In the rearrangement step, the magnitude of LD decreases with an increase in ethidium concentration, suggesting that the bending of polynucleotide around the intercalation site occurs in the rearrangement step.

• 한국전자통신학회논문지
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• 제7권5호
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• pp.1061-1066
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• 2012

디지털 메모리는 신뢰성, 속도 그리고 상대적인 단순한 제어회로로 인해 지금까지 저장장치로서 널리 사용되어 왔다. 그러나 디지털 메모리 저장능력은 공정의 선폭감소의 한계로 인해 결국 한계에 다다르게 될 것이다. 이러한 저장 능력을 획기적으로 증가시키는 방안의 하나로서 메모리의 셀에 저장하는 데이터의 형태를 디지털에서 아날로그로 변화시키는 것이다. 한 개의 셀과 프로그래밍을 위한 주변회로로 구성된 아날로그 메모리가 0.16um 표준 CMOS 공정에서 제작되었다. 제작된 아날로그 메모리는 저밀도 불활성 메모리, SRAM과 DRAM에서 리던던시 회로 제어, ID나 보안코드 레지스터, 영상이나 음성 저장장치 등에 응용될 것이다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.309-314
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• 2004

Static and transient behaviour of Low Temperature Poly-Si TFTs (LTPS-TFTs) and Single Grain TFTs (SG- TFTs) are compared 3-D simulation is applied here for the first time to TFTs to account for the structure and twin boundaries in SG-TFTs.

• 센서학회지
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• 제16권4호
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• pp.319-323
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• 2007

This paper describes the mechanical characteristics of poly 3C-SiC thin films grown on Si wafers with thermal oxide. In this work, the poly 3C-SiC thin film was deposited by APCVD method using only Ar carrier gas and single precursor HMDS at $1100^{\circ}C$. The elastic modulus and hardness of poly 3C-SiC thin films were measured using nanoindentation. Also, the roughness of surface was investigated by AFM. The resulting values of elastic modulus E, hardness H and the roughness of the poly 3C-SiC film are 305 GPa, 26 GPa and 49.35 nm respectively. The mechanical properties of the grown poly 3C-SiC film are better than bulk Si wafers. Therefore, the poly 3C-SiC thin film is suitable for abrasion, high frequency and MEMS applications.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 B
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• pp.690-692
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• 2003

The single phase switched reluctance motor has been studied and developed actively in the various applications with several kinds and forms because of the developments of the design technique by using the computer and of the driving technique power electronic technology, which has the merits of a simple and robust structure, and first of all reducing the number of the switching devices in comparison with poly phase switched reluctance motor. And also, the studies are making progess to substitute the switched reluctance motor for single phase induction motor. In the previous studies, the single phase switched reluctance motor for the drive of blower is designed with the design theory of the conventional rotating electric machine and poly phase switched reluctance motor. In this paper, we intend to select the optimal pole arc and pole pitch ratio by the FEM analysis, because the pole arc and pole pitch are very important factor to determine the characteristics of switched reluctance motor.

• Korean Chemical Engineering Research
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• 제55권3호
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• pp.296-301
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• 2017

최근에 저가의 고분자 전해질 연료전지(Proton Exchange Membrane Fuel Cells, PEMFC)용 비불소계 전해질 막 연구 개발이 활발히 진행되고 있다. 본 연구에서는 sulfonated poly (ether ether ketone) (sPEEK) 막의 내구성을 증가시키기 위해 PI 지지체를 이용한 강화 막을 제조하였다. 단일(비강화) 막전극합체(MEA)와 강화막 MEA의 내구성을 시험하기 위해 열화 가속화 기법을 이용하여 MEA 열화 실험을 진행하였다. 열화 전과 후에 I-V 분극곡선, 수소투과도, 전극 활성 면적, 막 저항과 부하 전달 저항을 측정하여 열화 전과 후를 비교하였다. 그 결과, 강화 MEA가 단일 MEA에 비해 수소투과전류밀도가 낮으며, 내구성이 높음을 확인하였다. 특히 열화 후 강화 MEA에서는 단일 MEA에서 나타난 쇼트 현상이 나타나지 않았다.

• 한국염색가공학회지
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• 제18권3호
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• pp.49-58
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• 2006

The purpose of this study was to examine the effect of covering yarn's twist on mechanical properties of knitted fabrics of composite yarns with single covering process. Four yarns that were used in this study: two different composite yarns made from the four kinds of cotton and functional polyester-(Poly-A) with the ratio of 52:48, and the rest two yarns are the original cotton 100% yarn and the poly-A 100% yarn. The two kinds of composite yarns, CP1 and CP2, were processed on the single covering process. CP1 was applied on the single covering process with S-800 tpm, where Poly-A was used as covering yarn and cotton was used as core yarn. CP2 was applied on the same process as CP1 except that Poly-A had been applied on the two-for-one twisting process with S-400 tpm on the previous step. Sixteen mechanical properties of all the four knifed fabrics knitted under the same knitting conditions were measured by KES-FB system with the outer knit condition. And 3D CAD dressmaking simulations, which were driven by some of the mechanical properties, were presented. The results were as follows: CP2 had high RT values with twisting of covering yarn. CP2 also had high B, 2HB values because of higher linear density. SMD was affected rather by twisting of covering yarn than by fine hair of the cotton surface. Twisting of covering yarn made it decreasing T value and increasing W value. Dressmaking 3D CAD simulations showed that there are buckling effects on CP2 because of high bending rigidity and shear rigidity.

• 한국세라믹학회지
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• 제36권6호
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• pp.604-610
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• 1999

Silicide layer structures and morphology degradation of the surface and interface of the silicide layers for he Co/refractory metal bilayer sputter-deposited on the P-doped polycrystalline Si substrate and subjected to rapid thermal annealing were investigated and compared with those on the single Si substrate. The CoSi-CoSi2 phase transition temperature is lower an morphology degradation of the silcide layer occurs more severely for the Co/refractorymetal bilayer on the P-doped polycrystalline Si substrate than on the single Si substrate. Also the final layer structure and the morphology of the films after silicidation annealing was found to depend strongly upon the interlayer metal. The layer structure after silicidation annealing of Co/Hf/doped-poly Si is Co-Hf alloy/polycrystalline CoSi2/poly Si substrate while that of Co/Nb is polycrystalline CoSi2/NbSi2/polycrystalline CoSi2/poly Si.

• Journal of Information Display
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• 제2권4호
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• pp.8-14
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• 2001

Three types of conjugated polymers, poly(PZ-Pi), poly(PZ-BPI) and poly(PZ-NPI) were synthesized by Schiff-base reaction. These new conjugated polymers exhibited improved solubility in common organic solvents due to the presence of alkyl side chains as well as azomethine groups, Double layer LEDs made with the synthesized polymers as emitting layer and $Alq_3$, as electron transporting layer exhibited enhanced EL emission and efficiency compared to those of single layer LEDs. Double layer LEDs exhibited gradual shift in the emission peak th the single layer LED, made of only $Alq_3$ as the emitting layer as the thickness of $Alq_3$ layer increased.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.129-130
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• 2000

The emission color stability of poly(fluorene) derivatives upon thermal annealing or passage of current in an electroluminescent device is affected by the structure of the main chain polymer unit and particularly by the polymer chain end substituents. Proper attention to these features leads to colorfast blue emission in both photo- and electoluminescence. Furthermore, the spectral emission characteristics can be tuned by the incorporation of various comonomers. Preliminary single layer device studies validate the potential utility of poly(fluorene) homo and copolymers for OLED applications.