• Journal of the Korean Society of Industry Convergence
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• v.25 no.2_2
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• pp.263-269
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• 2022

In this study, the optimal support position determination and stability determination of the wedge wire screen were performed for the production of the wedge wire filter screen with improved mesh screen. In order to manufacture a filter screen using a wedge wire, the support rod wedge wire is first installed according to the filtering capacity, and then spot welding is performed while rotating the profile wire. In the existing manufacturing method, it was manufactured using a 3m rod wedge wire and then cut according to dimensions, but it required the manufacture of a 6m cylindrical screen. Due to the increase in wedge wire length, it is difficult to manufacture stress concentration at sagging and fixed positions. In order to shorten the time of analysis, a single wedge wire was applied instead of a plurality of wedge wires. The reliability and validity of the interpretation were presented and the results were derived. After selecting the support point at the 2m position, structural analysis was performed on the entire filter screen to confirm stability.The purpose of this study is to identify the maximum deflection of the wire for the production of a 6m wedge wire screen and secure design basic data so that it can work safely through optimal support.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.66-69
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon$({\mu}c-Si:H)$ films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_{4}$ concentration$[F(SiH_{4})/F(SiH_{4})+F(H_{2})]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c-Si:H$ films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c-Si:H$ films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_{2}H_{6}$ to $SiH_{4}$ gas. The solar cells with structure of Al/nip ${\mu}c-Si:H$/TCO/glass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• Journal of Institute of Control, Robotics and Systems
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• v.6 no.12
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• pp.1106-1112
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• 2000

In this paper, we present a vision system which measures the cross-section of a hot wire-rod in the steel plant. We developed a mobile vision system capable of accurate measurement, which is strong to vibration and jolt when moving. Our system uses green laser light sources and CCD cameras as a sensor, where laser sheet beams form a cross-section contour on the surface of the hot wire-rod and the reflected light from the wire-rode is imaged on the CCD cameras. We use four lasers and four cameras to obtain the image with the complete cross-section contour without an occlusion region. We also perform camera calibrations to obtain each cameras physical parameters by using a single calibration pattern sheet. In our measuring algorithm, distorted four-camera images are corrected by using the camera calibration information and added to generate an image with the complete cross-section contour of the wire-rod. Then, from this image, the cross-section contour of the wire-rod is extracted by preprocessing and segmentation, and its height, width and area are measured.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.387-390
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon(${\mu}$c-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature below 300$^{\circ}C$. The SiH$_4$ concentration[F(SiH$_4$)/F(SiH$_4$).+(H$_2$)] is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}$c-Si:H films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}$c-S:H films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of B$_2$H$\_$6/ to SiH$_4$ gas. The solar cells with structure of Al/nip ${\mu}$c-Si:H/TCO/g1ass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• Current Photovoltaic Research
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• v.6 no.1
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• pp.27-30
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• 2018

The dependency of the electrical characteristics of silicon solar-cells on the depth of damaged layer induced by wire-sawing process was investigated. To compare cell efficiency with residual sawing damage, silicon solar-cells were fabricated by using as-sawn wafers having different depth of saw damage without any damaged etching process. The damaged layer induced by wire-sawing process in silicon bulk intensely influenced the value of fill factor on solar cells, degrading fill factor to 57.20%. In addition, the photovoltaic characteristics of solar cells applying texturing process shows that although the initial depth of saw-damage induced by wire-sawing process was different, the value of short-circuit current, fill-factor, and power-conversion-efficiency have an almost same, showing ~17.4% of cell efficiency. It indicated that the degradation of solar-cell efficiency induced by wire-sawing process could be prevented by eliminating all damaged layer through sufficient pyramid-surface texturing process.

• Progress in Superconductivity and Cryogenics
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• v.10 no.2
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• pp.34-37
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• 2008

According to the recent design of an HTS (High Temperature Superconducting) power transformer whose capacity is hundreds MVA, the rated current values of the low voltage side are generally over thousands amps. Considering the performance of the recent HTS wires, it is inevitable to use several HTS wires in parallel for large rated current. Lots of stacked HTS wires were fabricated and tested so far, and the results have showed that we have to transpose each wire in order to reduce the AC losses as well as to increase the current capacity. But many development programs about HTS transformers reveal that the transposition of the several wires during the winding process is quite difficult not only in case of the layer windings but also in case of the pancake type ones. So, we need transposed multiple HTS wire which we can handle like single wire or cable for the HTS windings of large capacity power transformer. We fabricated several kinds of samples of multiple HTS wire with transposition to apply it to the HTS windings of power transformer. The electrical characteristics such as critical currents or AC losses are analyzed by experiments in case by case. Finally we present the best design of a multiple HTS wire for power transformer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.3
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• pp.119-123
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• 2013

Most of the world's solar cells in photovoltaic industry are currently fabricated using crystalline silicon. Czochralski-grown silicon crystals are more expensive than multicrystalline silicon crystals. The future of solar-grade Czochralski-grown silicon crystals crucially depends on whether it is usable for the mass-production of high-efficiency solar cells or not. It is generally believed that the main obstacle for making solar-grade Czochralski-grown silicon crystals a perfect high-efficiency solar cell material is presently light-induced degradation problem. In this work, the substitution of boron with gallium in p-type silicon single crystal is studied as an alternative to reduce the extent of lifetime degradation. The diamond-wire sawing technology is employed to slice the silicon ingot. In this paper, the quality of the diamond wire-sawn gallium-doped silicon wafers is studied from the chemical, electrical and structural points of view. It is found that the characteristic of gallium-doped silicon wafers including texturing behavior and surface metallic impurities are same as that of conventional boron-doped Czochralski crystals.

• Smart Structures and Systems
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• v.14 no.4
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• pp.541-558
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• 2014

This paper proposes a new design of shape memory alloy (SMA) wire actuated gripper for open mode operation. SMA can generate smooth muscle movements during actuation which make them potentially good contenders in designing grippers. The principle of the shape memory alloy gripper is to convert the linear displacement of the SMA wire actuator into the angular displacement of the gripping jaw. Steady state analysis is performed to design the wire diameter of the bias spring for a known SMA wire. The gripper is designed to open about an angle of $22.5^{\circ}$ when actuated using pulsating electric current from a constant current source. The safe operating power range of the gripper is determined and verified theoretically. Experimental evaluation for the uncontrolled gripper showed a rotation of $19.97^{\circ}$. Forced cooling techniques were employed to speed up the cooling process. The gripper is simple and robust in design (single movable jaw), easy to fabricate, low cost, and exhibits wide handling capabilities like longer object handling time and handling wide sizes of objects with minimum utilization of power since power is required only to grasp and release operations.

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1620-1622
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• 1998

The failure occurs in the system of the underground transmission line, the time of restoration is very long, the damage from stopping power supply is very serious and the cost of restoration is very great. because of these problems, the system and equipment must be protected from every electrical failure by installing protection unit. This study is summarized and compared the effects of configuration method of cable protection device with respect to surges in EHV (Extra High Voltage) underground transmission system.

• 전기의세계
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• v.18 no.6
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• pp.23-32
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• 1969

The thesis has derived the formulas and computational algorithms useful for predicting and constraining the potential rises on the neutral line in 3-phase, 4-wire distribution line systems in the case of contact faults and single-line grounding faults. In addition it has suggested economically optimal designing conditions herewith of the distribution line systems in conduction with the potential restraining cost functions.