• Title/Summary/Keyword: single wall

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Growth and Optoelectric Characterization of $ZnGa_{2}Se_{4}$ Single Crystal Thin Films by Hot Wall Epitaxy (Hot Wall Epitaxy (HWE)에 의한 $ZnGa_{2}Se_{4}$ 단결정 박막 성장과 광전기적 특성)

  • Park, Chang-Sun;Hong, Kwang-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.163-166
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    • 2001
  • The stochiometric mix of evaporating materials for the $ZnGa_{2}Se_{4}$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $ZnGa_{2}Se_{4}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnGa_{2}Se_{4}$ single crystal trun films measured from Hall effect by van der Pauw method are $9.63{\times}10^{17}cm^{-3}$, $296cm^{2}/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c axis of the $ZnGa_{2}Se_{4}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$ So and the crystal field splitting $\Delta$Cr were 251.9 meV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on $ZnGa_{2}Se_{4}$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton $(A^{0},X)$ having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.

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Growth and Optoelectric Characterization of $CdGa_{2}Se_{4}$ Single Crystal Thin Films by Hot Wall Epitaxy (Hot Wall Epitaxy (HWE)에 의한 $CdGa_{2}Se_{4}$ 단결정 박막 성장과 광전기적 특성)

  • Hong, Kwang-Joon;Park, Chang-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.167-170
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    • 2001
  • The stochiometric mix of evaporating materials for the $CdGa_{2}Se_{4}$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_{2}Se_{4}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_{2}Se_{4}$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3},345cm^{2}/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_{2}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$ So and the crystal field splitting $\Delta$Cr were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_{2}Se_{4}$ single crystal thin film, we observed free excition (Ex) existing only high Quality crystal and neutral bound exiciton $(D^{0},X)$ having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.

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Growth and Effect of Thermal Annealing for ZnIn2S4 Single Crystal Thin Film by Hot Wall Epitaxy (Hot Wall Epitaxy (HWE)법에 의한 ZnIn2S4 단결정 박막 성장과 열처리 효과)

  • Park, Chang-Sun;Hong, Kwang-Joon
    • Korean Journal of Materials Research
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    • v.18 no.6
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    • pp.318-325
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    • 2008
  • Single crystal $ZnIn_2S_4$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $ZnIn_2S_4$ source at $610^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray rocking curve (DCRC). The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.9514\;eV-(7.24{\times}10^{-4}\;eV/K)T^2/(T+489\;K)$. After the as-grown $ZnIn_2S_4$ single crystal thin films were annealed in Zn-, S-, and In-atmospheres, the origin of point defects of $ZnIn_2S_4$ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_S$, $Zn_{int}$, and $S_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted $ZnIn_2S_4$ single crystal thin films to an optical p-type. Also, we confirmed that In in $ZnIn_2S_4$/GaAs did not form the native defects because In in $ZnIn_2S_4$ single crystal thin films existed in the form of stable bonds.

Time-Delay and Amplitude Modified BP Imaging Algorithm of Multiple Targets for UWB Through-the-Wall Radar Imaging

  • Zhang, Huamei;Li, Dongdong;Zhao, Jinlong;Wang, Haitao
    • Journal of Information Processing Systems
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    • v.13 no.4
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    • pp.677-688
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    • 2017
  • In order to solve the undetected probability of multiple targets in ultra-wideband (UWB) through-the-wall radar imaging (TWRI), a time-delay and amplitude modified back projection (BP) algorithm is proposed. The refraction point is found by Fermat's principle in the presence of a wall, and the time-delay is correctly compensated. On this basis, transmission loss of the electromagnetic wave, the absorption loss of the refraction wave, and the diffusion loss of the spherical wave are analyzed in detail. Amplitude compensation is deduced and tested on a model with a single-layer wall. The simulating results by finite difference time domain (FDTD) show that it is effective in increasing the scattering intensity of the targets behind the wall. Compensation for the diffusion loss in the spherical wave also plays a main role. Additionally, the two-layer wall model is simulated. Then, the calculating time and the imaging quality are compared between a single-layer wall model and a two-layer wall model. The results illustrate the performance of the time-delay and amplitude-modified BP algorithm with multiple targets and multiple-layer walls of UWB TWRI.

A Study of UGI Series for Improvement of Diagnosis on the Anterior Wall of the Stomach (위 전벽 병변 진단을 위한 UGI series의 실태 및 개선방안에 관한 고찰)

  • Lee, Won-Hong;Son, Soon-Yong;Kang, Hyoung-Wook
    • Journal of radiological science and technology
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    • v.20 no.2
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    • pp.63-67
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    • 1997
  • This paper is to investigate a more detailed method for the diagnosis of anterior wall of the stomach by making a comparative study with several hospitals. It has been true that there have been hospitals, that have not examined anterior wall of the stomach. However, it is very important for us to examine anterior wall of the stomach for an carly detection of gastric carcinoma. The results of th study are as follows : 1. Frequency of occurrence of the early gastric carcinoma for the anterior wall were 50 cases and 34 cases for the posterior wall out of 84 cases. 2. Only a hospitals have examined the anterior wall of stomach. 3. In case of operation, only a hospitals have used two techniques at for same time single and double contrast studies. 4. Only cue hospital used a compression pad and three hospitals hod only filing state images taloen. 5. In general, 1 chest of film was used and the number of exposures rouged from 1 to 2 times. Lesions on the anterior wall of the stomach can be shown by the combination of prone single com-pression and supine double contrast radiographs. Therefore, the conclusion came to the result that the prone single compression and supine double contract technique of the anterior wall are Indispensable methods to the routine check of the stomach.

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Single Wall Carbon Nanotube Films Produced by Arc Discharge (아크 방전법으로 성장된 대면적 단일벽 탄소나노튜브 필름)

  • Kang, Young-Jin;Oh, Dong-Hoon;Song, Hye-Jin;Jung, Jin-Yeun;Jung, Hyuk;Cho, You-Suk;Kim, Do-Jin
    • Korean Journal of Materials Research
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    • v.18 no.5
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    • pp.253-258
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    • 2008
  • A simple method to deposit carbon nanotube films uniformly on large area substrates using an arc discharge method is reported in this paper. The arc discharge method was modified to deposit carbon nanotube films in situ on the substrates. The substrates were scanned several times over the arcing point for a uniform film thickness. Deposition was carried out under variable dc bias conditions at 600 torr of $H_2$ gas. The thickness uniformity of the single-wall carbon nanotube films as characterized by a four-point probe was within 30% deviation. The morphology and crystal quality of the single-wall carbon nanotube film were also characterized by field emission scanning electron microscopy and Raman spectroscopy.

Atomistic simulation of structural and elastic modulus of ZnO nanowires and nanotubes (산화아연 나노선과 나노튜브의 구조 및 탄성계수에 관한 원자단위 연구)

  • Moon, W.H.;Choi, C.H.;Hwang, H.J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.429-429
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    • 2008
  • The structural stability and the elastic modulus of hexagonal ZnO nanowires and nanotubes are investigated using atomistic simulations based on the shell model. The ZnO nanowire with (10-10) facets is energetically more stable than that with (11-20). Our calculations indicate that the structural change of ZnO nanowires with (10-10) facets is sensitive to the diameter. With decreasing the diameter of ZnO nanowires, the unit-cell length is increased while the bond-length is reduced due to the change of surface atoms. Unlike the conventional layered nanotubes, the energetic stability of single crystalline ZnO nanotubes is related to the wall thickness. The potential energy of ZnO nanotubes with fixed outer and inner diameters decreases with increasing wall thickness while the nanotubes with same wall thickness are independent of the outer and inner diameters. The transformation of single crystalline ZnO nanotubes with double layer from wurtzite phase to graphitic suggests the possibility of wall-typed ZnO nanotubes. The size-dependent Young's modulus for ZnO nanowires and nanotubes is also calculated. The diameter and the wall thickness play a significant role in the Young's modulus of single crystalline ZnO nanowires and nanotubes, respectively.

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Random topological defects in double-walled carbon nanotubes: On characterization and programmable defect-engineering of spatio-mechanical properties

  • A. Roy;K. K. Gupta;S. Dey;T. Mukhopadhyay
    • Advances in nano research
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    • v.16 no.1
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    • pp.91-109
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    • 2024
  • Carbon nanotubes are drawing wide attention of research communities and several industries due to their versatile capabilities covering mechanical and other multi-physical properties. However, owing to extreme operating conditions of the synthesis process of these nanostructures, they are often imposed with certain inevitable structural deformities such as single vacancy and nanopore defects. These random irregularities limit the intended functionalities of carbon nanotubes severely. In this article, we investigate the mechanical behaviour of double-wall carbon nanotubes (DWCNT) under the influence of arbitrarily distributed single vacancy and nanopore defects in the outer wall, inner wall, and both the walls. Large-scale molecular simulations reveal that the nanopore defects have more detrimental effects on the mechanical behaviour of DWCNTs, while the defects in the inner wall of DWCNTs make the nanostructures more vulnerable to withstand high longitudinal deformation. From a different perspective, to exploit the mechanics of damage for achieving defect-induced shape modulation and region-wise deformation control, we have further explored the localized longitudinal and transverse spatial effects of DWCNT by designing the defects for their regional distribution. The comprehensive numerical results of the present study would lead to the characterization of the critical mechanical properties of DWCNTs under the presence of inevitable intrinsic defects along with the aspect of defect-induced spatial modulation of shapes for prospective applications in a range of nanoelectromechanical systems and devices.

Study of a Variable Single-tracked Crawler for Overcoming Obstacles (가변형 단일 궤도를 이용한 장애물 극복방법에 관한 연구)

  • Kim, Jee-Hong;Lee, Chang-Goo
    • Journal of Institute of Control, Robotics and Systems
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    • v.16 no.4
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    • pp.391-395
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    • 2010
  • In our paper, we propose an asymmetric single-tracked wheel system, and describe its structure and the method for maintaining the length of a transformable track system. And the method is reducing the gap of lengths. Therefore, we propose an efficient structure for transforming and explain motions with kinematics. Our transformable shape single-tracked mobile system has an advantage to overcome an obstacle or stairs by the variable arms in the single unity track system. But we will make the variable shape of tracked system get a drive that has a force to stand against a wall. In this case, we can consider this system to a rigid body and have a notice that this single tracked system is able to get vary shape with the variable arm angle. Considering forces balance along x-axis and y-axis, and moments balance around the center of the mass we have. If this rigid body is standing against a wall and doesn't put in motion, the force of flat ground and the rigid body sets an equal by a friction. In the same way, the force of a wall and the rigid sets an equal by a friction.

A Study on the transformation Pross of Vernacular Houses in Ulleung-Island -Focused on wall, roof, window and ceiling- (울릉도 민가의 변화과정에 관한 연구 -벽체, 지붕, 창호, 천장을 중심으로-)

  • Kim Chan-Yeong
    • Journal of the Korean housing association
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    • v.15 no.5
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    • pp.85-96
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    • 2004
  • The purpose of this study was to (md out the characteristics of the residential house in Ulleung Island in terms of building materials, structure and construction method, structural design by actual field surveys. This study found several facts; First, the house was classified into the log house and mud-wall house according to building material for wall structure. The log house prevailed in the early days of the settlement in the island because of affulent timber materials available around. However, the mud wall house became a popular type in later days because of the depletion of timber materials. Second, the Udeki wall was an unique installation reflecting the severe climate conditions of Ulleung Island. However, many aspects of the Udeki wall was changed according to the change of living style and the introduction of modem heating systems in terms of its function, size, building material, layout position etc. Third, the roofing material also has been changed from materials available locally to slate materials transported from the mainland. Fourth, the bamboo slender-ribbed door as a single-swing door type was popular and later time the single-sliding door or three ribbed door was widely used in rooms installed later instead. Fifth, the roof was placed over the room, kitchen, and Chukdam (outer wall) and this was a resonable way to cope with heavy snowfalls in the winter season in Ulleung Island.