• Solar Energy
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• v.19 no.1
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• pp.77-86
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• 1999

The optimal thermal design of a single heat source on one wall of a vertical open top cavity was studied experimentally. The temperature and flow fields in the cavity were visualized. The objectives of this study is to obtain the best location of the single heat source and to examine the effects of heat source protrusion, substrate thermal conductivity and cavity aspect ratio on the natural convection cooling due to a single heat source. As the results, the cooling effect for the copper substrate is superior to that of the epoxy-resin substrate and is improved with increasing cavity width. For the epoxy-resin substrate of lower conductivity, the protrusion of the heaters plays a role in decreasing the cooling effect. The best location was the mid-height of the substrate.

• Journal of ILASS-Korea
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• v.28 no.3
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• pp.113-118
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• 2023

This study investigates the evaporation characteristics of paired sessile droplets on a heated substrate. In particular, the evaporation time and contact line behaviors were analyzed based on the droplet-to-droplet distance and substrate temperature. The contact line behavior and volume variations were visualized using the shadowgraph method. It was observed that the contact diameter and contact angle exhibited similar behavior for both single and paired droplets regardless of the droplet-to-droplet distance and substrate temperature. The paired droplets demonstrated a longer evaporation time than the single droplet due to the vapor accumulation between the droplets. Furthermore, the scaled lifetime, defined as the ratio of evaporation time between paired and single droplets, increased as the droplet-to-droplet distance decreased and decreased as the substrate temperature increased, attributed natural convection.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.541-542
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• 2008

• Korean Journal of Materials Research
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• v.21 no.5
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• pp.268-272
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• 2011

Due to their novel properties, GaN based semiconductors and their nanostructures are promising components in a wide range of nanoscale device applications. In this work, the gallium nitride is deposited on c-axis oriented sapphire and porous SWCNT substrates by molecular beam epitaxy using a novel single source precursor of $Me_2Ga(N_3)NH_2C(CH_3)_3$ with ammonia as an additional source of nitrogen. The advantage of using a single molecular precursor is possible deposition at low substrate temperature with good crystal quality. The deposition is carried out in a substrate temperature range of 600-750$^{\circ}C$. The microstructural, structural, and optical properties of the samples were analyzed by scanning electron microscopy, X-ray diffraction, Raman spectroscopy, and photoluminescence. The results show that substrate oriented columnar-like morphology is obtained on the sapphire substrate while sword-like GaN nanorods are obtained on porous SWCNT substrates with rough facets. The crystallinity and surface morphology of the deposited GaN were influenced significantly by deposition temperature and the nature of the substrate used. The growth mechanism of GaN on sapphire as well as porous SWCNT substrates is discussed briefly.

• Journal of the Korean Society for Heat Treatment
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• v.33 no.1
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• pp.20-24
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• 2020

Single crystal diamonds are in great demand in such fields as mechanical, electronic applications and optoelectronics. Large area single crystal diamonds are attracting attention in future industries for mass production and low cost. In this study, hot filament CVD (HFCVD) is used to grow large area single crystal diamond. However, the growth rate of large area single crystal diamond using HFCVD is known to be very low. The goal of this study is to use single crystal diamond substrates in HFCVD with methane-hydrogen gas mixtures to increase the growth rate of single crystal diamond and to optimize the conditions by analysing the effects of deposition conditions for high quality crystallinity. The deposition pressure, the ratio of CH₄/H₂ gas, the substrate temperature and the distance between the filament and the substrate were optimized. The sample used a 4×4 (mm²) size single crystal diamond substrate (100), the CH₄/H₂ gas ratio was fixed at 5%, the substrate temperature was synthesized to about 1000℃. At this time, the deposition pressure was changed to three types of 50, 75, 85 Torr and deposited. Finally, optimization was investigated under pressure conditions to analyse the growth rate and quality of single crystal diamond.

• Journal of the Korean Ceramic Society
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• v.36 no.6
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• pp.604-610
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• 1999

Silicide layer structures and morphology degradation of the surface and interface of the silicide layers for he Co/refractory metal bilayer sputter-deposited on the P-doped polycrystalline Si substrate and subjected to rapid thermal annealing were investigated and compared with those on the single Si substrate. The CoSi-CoSi2 phase transition temperature is lower an morphology degradation of the silcide layer occurs more severely for the Co/refractorymetal bilayer on the P-doped polycrystalline Si substrate than on the single Si substrate. Also the final layer structure and the morphology of the films after silicidation annealing was found to depend strongly upon the interlayer metal. The layer structure after silicidation annealing of Co/Hf/doped-poly Si is Co-Hf alloy/polycrystalline CoSi2/poly Si substrate while that of Co/Nb is polycrystalline CoSi2/NbSi2/polycrystalline CoSi2/poly Si.

• Journal of the Korean institute of surface engineering
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• v.40 no.3
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• pp.113-116
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• 2007

Titanium dioxide ($TiO_2$) films were deposited by RF reactive magnetron sputtering on non-alkali glass and single crystal MgO (100) substrate at substrate temperature of $400^{\circ}C$. Micro structures of $TiO_2$ films were investigated by XRD, FE-SEM, and Pole figure measurements. $TiO_2$ films deposited on glass substrate showed preferred orientation of anatase (101), whereas $TiO_2$ films deposited on the MgO single crystal substrate showed hetero-epitaxial anatase (100). $TiO_2$ film grown on MgO substrate showed higher photoctalytic activity than that of glass substrate.

• Journal of Information Display
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• v.3 no.4
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• pp.4-7
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• 2002

A recently developed phase separated composite film method has been employed to fabricate a liquid crystal (LC) based electro-optical device using a single glass substrate. The resulting device is made of adjacent parallel layers of LC and polymer maded by phase separation. The LC layer is confined between the solidified polymer layer on one side and the glass substrate on the other. The electro-optical properties of these devices demonstrate their technological potential in light weight and hand-held electronic products.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.463-466
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• 2002

A new type of LCD has been developed using recently developed phase separated composite film method with a single glass substrate. The resultant structures are made of adjacent parallel layers of liquid crystal and polymer. The LC layer is confined between the solidified polymer layer and glass substrate. The electra-optical properties of the display have been investigated. This technique has the potential to realize a lightweight display for hand-held portable electronic products.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.67-70
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• 1998

In this work, the freestanding GaN single crystalline substrates without cracks were grown by hydride vapor phase epitaxy (HVPE). The GaN substrates, having a current maximum size of 350 $\mu\textrm{m}$-thickness and 10${\times}$10 $\textrm{mm}^2$ area, were obtained by HVPE growth GaN on sapphire substrate and subsequent mechanical removal of the sapphire substrate. A lattice constant of c$\_$0/=5.18486 ${\AA}$ and a FWHM of DCXRD was 650 arcsec for the single crystalline freestanding GaN substrate. The low temperature PL spectrum consist of excitonic emission and deep donor to acceptor pair recombination at 1.8 eV. The Raman E$_2$ (high) mode frequency was 567 cm$\^$-1/ which was the same as that of strain free bulk single crystals. The Hall mobility and carrier concentration was 283 $\textrm{cm}^2$/V$.$sec and 1.1${\times}$10$\^$18/ cm$\^$-3/, respectively. The freestanding and crack-free GaN single crystalline substrate suitable for the homoepitaxial growth of GaN, and the HVPE method are promising approaches for the preparation of large area, crack-free GaN substrates.