• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.6
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• pp.252-259
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• 2005

Single crystal $CuGaSe_2$ layers were grown on thoroughly etched semi-insulating CaAs(100) substrate at $450^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuGaSe_2$ source at $610^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuGaSe_2$ thin films measured with Hall effect by Van der Pauw method are $4.87{\times}10^{17}cm^{-3}$ and $129cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.7998eV-(8.7489{\times}10^{-4}eV/K)T^2/(T+335K)$. The voltage, current density of maxiumun power, fill factor, and conversion, efficiency of $n-CdS/p-CuGaSe_2$, heterojunction solar cells under $80mW/cm^2$ illumination were found to be 0.41 V, $21.8mA/cm^2$, 0.75 and 11.17%, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.4
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• pp.442-450
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• 2008

In this paper, the phase diverisity in a direct-conversion receiver for a UHF RFID reader is analyzed and the optimal I/Q signal combining methods is presented with respect to tag modulation. At first, fading characteristics of a single channel receiver is shown to prove the importance of phase diversity due to the phase relationship between the backscattered signal and the local oscillator. And the optimal signal combining methods are presented in order to overcome the signal power reduction due to phase diversity. In case of ASK, the power combining method is presented for the optimal I/Q combining. And the arctangent and principal component combining methods using covariance matrix of I and Q channels are presented for the optimal I/Q combining in case of PSK. In order to analyze the performance of suggested methods, the selection diversity and the optimal combining methods are compared. According to analysis and simulation results, the optimal combining methods have a maximum 3 dB SNR enhancement than selection diversity.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.35S no.9
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• pp.19-27
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• 1998

The Transmitter part of single RF transceiver chip for an extended GSM handset application was circuit-designed, fabricated adn evaluated. The RF-IC Chip was processed by 0.8${\mu}m$ Si BiCMOS, 80 pin TQFP of $10 {\times} 10mm$ size, 3.3V operated RF-IC reveals, in general, quite reasonable integrity and RF performances. This paper describes development resuts of RF transmitter section, which includes IF/RF up-conversion mixer, IF/RF polyphase and pre-amplifier. The test results show that RF transmitter section is well operated within frequency range of 880~915MHz, which is defined on the extended GSM(E-GSM) specification. The transmitter section also reveals moderate power consumption of 71mA and total output power of 8.2dBm.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.1
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• pp.70-79
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• 2016

This paper proposes a low-power range-scaled 14b 30 MS/s pipeline-SAR composite ADC for high-performance CIS applications. The SAR ADC is employed in the first stage to alleviate a sampling-time mismatch as observed in the conventional SHA-free architecture. A range-scaling technique processes a wide input range of 3.0VP-P without thick-gate-oxide transistors under a 1.8 V supply voltage. The first- and second-stage MDACs share a single amplifier to reduce power consumption and chip area. Moreover, two separate reference voltage drivers for the first-stage SAR ADC and the remaining pipeline stages reduce a reference voltage disturbance caused by the high-speed switching noise from the SAR ADC. The measured DNL and INL of the prototype ADC in a $0.18{\mu}m$ CMOS are within 0.88 LSB and 3.28 LSB, respectively. The ADC shows a maximum SNDR of 65.4 dB and SFDR of 78.9 dB at 30 MS/s, respectively. The ADC with an active die area of $1.43mm^2$ consumes 20.5 mW at a 1.8 V supply voltage and 30 MS/s, which corresponds to a figure-of-merit (FOM) of 0.45 pJ/conversion-step.

• The Journal of the Convergence on Culture Technology
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• v.6 no.3
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• pp.427-430
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• 2020

The multi-channel analog signal to digital signal conversion is increasing in the field of IoT and medical measurement equipments. It has chip area and power consumption constraints to use a few single or 2_channel ADC for multi_channel application. This paper described to design and implement a proposed comb filter for multi-channel, 24bit ADC. The function of proposed comb filter is verified by matlab simulation and the FPGA test board. It was fabricated using SK Hynix 0.35㎛ CMOS standard process. The performance and chip size is compared with the existing design method that uses integrator/differentiator and FIR construction. The proposed comb filter is expected to use the IoT product and medical measurement equipments that require multi-channel, low power consumption and small hardware size.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.2B no.3
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• pp.115-124
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• 2002

This paper presents an active auxiliary edge-resonant DC link snubber with a ringing surge damper and a three-phase voltage source type zero voltage soft-switching inverter with the resonat snubber treated here for the AC servo motor driver applications. The operation of the active auxiliary edge-resonant DC link snubber circuit with PWM voltage is described, together with the practical design method to select its circuit parameters. The three-phase voltage source type soft-switching inverter with a single edge-resonant DC link snubber treated here is evaluated and discussed for the small-scale permanent magnet (PM) type-AC servo motor driver from an experimental point of view. In addition to these, the AC motor stator current and its motor speed response for the proposed three-phase soft-switching inverter employing Intelligent Power Module(IPM) based on IGBTS are compared with those of the conventional three-phase hard-switching inverter using IPM. The practical effectiveness of the three-phase soft-switching inverter-fed permanent magnet type AC motor speed tracking servo driver is proven on the basis of the common mode current in a novel type three-phase soft-switching inverter-fed AC motor side and the conductive noise on the mains terminal interface voltage as compared with those of the conventional three-phase hard-switching inverter-fed permanent magnet type AC servo motor driver for the speed tracking applications.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.11
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• pp.89-94
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• 2008

In this paper, a cascade of a wideband amplifier and a high-Q bandpass filter (BPF) has been realized in a 0.18mm CMOS technology for the applications of subsampling direct-conversion receivers. The wideband amplifier is designed to obtain the -3dB bandwidth of 5.4GHz, and the high-Q BPF is designed to select a 2.4GHz RF signal for the Bluetooth specifications. The measured results demonstrate 18.8dB power gain at 2.34GHz with 31MHz bandwidth, corresponding to the quality factor of 75. Also, it shows the noise figure (NF) of 8.6dB, and the broadband input matching (S11) of less than -12dB within the bandwidth. The whole chip dissipates 64.8mW from a single 1.8V supply and occupies the area of $1.0{\times}1.0mm2$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.6
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• pp.682-690
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• 2012

In this paper, a highly linear self oscillating mixers(SOM) using second harmonic injections are presented. The H-slot defected ground structure(DGS) is designed as a balanced resonator for oscillation in the proposed SOM. Since the H-slot DGS resonator achieves a high Q factor, it is a suitable structure to provide low phase noise for the oscillator. The single balanced mixer is utilized in this work and it provides good LO-RF isolation since balanced LO signals are suppressed at the RF input port. In order to inject the second harmonic of the IF, we propose two different methods using feedback loops. In the first method, IF achieves a 3.08 dB conversion gain at 226 MHz with input power of -20 dBm at 5 GHz RF input signal. The IF achieves 2 dB conversion gain at 423 MHz with the input power of -20 dBm at 5.2 GHz RF input signal in the second method. The measured IMD3s are 61.8 dB and 65 dB for the each method. These SOMs present improved linearity compared to that without the second harmonic injection because IMD3s are improved by 18. dB and 21 dB for each method.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.463-463
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• 2014

Dye-sensitized solar cells (DSSCs) have generated a strong interest in the development of solid-state devices owing to their low cost and simple preparation procedures. Effort has been devoted to the study of electrolytes that allow light-to-electrical power conversion for DSSC applications. Several attempts have been made to substitute the liquid electrolyte in the original solar cells by using (2,2',7,7'-tetrakis (N,N-di-p-methoxyphenylamine)-9-9'-spirobi-fluorene (spiro-OMeTAD) that act as hole conductor [1]. Although efficiencies above 3% have been reached by several groups, here the major challenging is limited photoelectrode thickness ($2{\mu}m$), which is very low due to electron diffusion length (Ln) for spiro-OMeTAD ($4.4{\mu}m$) [2]. In principle, the $TiO_2$ layer can be thicker than had been thought previously. This has important implications for the design of high-efficiency solid-state DSSCs. In the present study, we have fabricated 3-D Transparent Conducting Oxide (TCO) by growing tin-doped indium oxide (ITO) nanowire (NWs) arrays via a vapor transport method [3] and mesoporous $TiO_2$ nanoparticle (NP)-based photoelectrodes were prepared using doctor blade method. Finally optimized light-harvesting solid-state DSSCs is made using 3-D TCO where electron life time is controlled the recombination rate through fast charge collection and also ITO NWs length can be controlled in the range of over $2{\mu}m$ and has been characterized using field emission scanning electron microscopy (FE-SEM). Structural analyses by high-resolution transmission electron microscopy (HRTEM) and X-Ray diffraction (XRD) results reveal that the ITO NWs formed single crystal oriented [100] direction. Also to compare the charge collection properties of conventional NPs based solid-state DSSCs with ITO NWs based solid-state DSSCs, we have studied intensity modulated photovoltage spectroscopy (IMVS), intensity modulated photocurrent spectroscopy (IMPS) and transient open circuit voltages. As a result, above $4{\mu}m$ thick ITO NWs based photoelectrodes with Z907 dye shown the best performing device, exhibiting a short-circuit current density of 7.21 mA cm-2 under simulated solar emission of 100 mW cm-2 associated with an overall power conversion efficiency of 2.80 %. Finally, we achieved the efficiency of 7.5% by applying a CH3NH3PbI3 perovskite sensitizer.

• Journal of the Korean Institute of Gas
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• v.17 no.5
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• pp.1-7
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• 2013

In this study, simulation work of HCNG refueling system was performed. The hydrogen was produced from steam reforming process by natural gas. The conversion of natural gas is increased as SCR is increased. but it was no significant difference more than 3 of SCR and fuel throughput is increased as GHSV is increased. Both conversion and fuel throughput levels was optimized when the $1700h^{-1}$ of GHSV. CNG was compressed from low pressure natural gas. For the mixing of $H_2$ and CNG is mixed with the high pressure conditions such as 400bar of $H_2$ and 250bar of natural gas. Single-stage compression was required more power than multi stage. So, multi stage compression was suggested for high pressure compression. We calculated the intermediate pressure to minimize total required power of compressors. The intermediate pressure for $H_2$ and natural gas were derived at 61 and 65 bar, respectively.