• 제목/요약/키워드: single grain

검색결과 571건 처리시간 0.027초

대면적 단결정 Gd1.5Ba2Cu3O7-y 벌크 초전도체의 초전도 특성 (Superconducting Properties of Large Single Grain Gd1.5Ba2Cu3O7-y Bulk Superconductors)

  • 김찬중;박승연;김광모;박순동;전병혁
    • 한국재료학회지
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    • 제22권11호
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    • pp.569-574
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    • 2012
  • Large single grain $Gd_{1.5}Ba_2Cu_3O_{7-y}$ (Gd1.5) bulk superconductors were fabricated by a top-seeded melt growth (TSMG) process using an $NdBa_2Cu_3O_{7-y}$ seed. The seeded Gd1.5 powder compacts with a diameter of 50 mm were subjected to the heating cycles of a TSMG process. After the TSMG process, the diameter of the single grain Gd1.5 compact was reduced to 43 mm owing to the volume contraction during the heat treatment. The superconducting transition temperature ($T_c$) of the top surface of the single grain Gd1.5 sample was as high as 93.5 K. The critical current densities ($J_cs$) at 77 K and 1T and 1.5 T were in ranges of 25,200-43,900 $A/cm^2$ and 10,000-23,000 $A/cm^2$, respectively. The maximum attractive force at 77 K of the sample field-cooled using an Nd-B-Fe permanent magnet (surface magnetic field of 0. 527 T) was 108.3 N; the maximum repulsive force of the zero field-cooled sample was 262 N. The magnetic flux density of the sample field-cooled at 77 K was 0.311T, which is approximately 85% of the applied magnetic field of 0.375 T. Microstructure investigation showed that many $Gd_2BaCuO_5$ (Gd211) particles of a few ${\mu}m$ in size, which are flux pinning sites of Gd123, were trapped within the $GdBa_2Cu_3O_{7-y}$ (Gd123) grain; unreacted $Ba_3Cu_5O_8$ liquid and Gd211 particles were present near the edge regions of the single grain Gd1.5 bulk compact.

단결정 CMSX-2의 표면재결정 거동 (The Surface Recrystallization Behavior of Single Crystal CMSX-2)

  • 조창용;나영상;김학민;김우열;배차헌;이상래
    • 연구논문집
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    • 통권23호
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    • pp.15-27
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    • 1993
  • The single crystal specimens were solidified by modified Bridgeman method. The surface recrystallized single crystal specimens were prepared by shot peening followed by heat treatment. The surface recrystallization begins at the dendrite cores on the surface. The recrystallized grains grew into the inner side of the specimen. The growth of recrystallized grains was inhibited by the pores and eutectic phases. The primary $\gamma'$ phases were dissolved at the recrystallized grain boundaries during the grain growth. The grain growth of recrystallized grains was similar to the cellular type transformation. No orientation relationships were found bewteen the recrystallized grains and the parent phase.

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대청도 모래울 사구의 지형 특성과 OSL 연대 (Geomorphological Characteristics and OSL Ages of the Moraeul dune in Daechoengdo Island, South Korea)

  • 최광희
    • 한국지형학회지
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    • 제27권4호
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    • pp.1-11
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    • 2020
  • Coastal dunes play an important role in coastal defense. The Moraeul dune in Daecheongdo Island is representative in this regard. However, there is little knowledge, concerning the morphology, grain size, and formation timing of the dune. This study investigated the geomorphological characteristics of the Moraeul dune using topographic surveys, grain size analyses, and OSL dating. The dune was classified as 'single accreted foredune', which was developed under dense vegetation cover and efficient sand trapping. The dune consisted of fine to medium sand with 1.6Φ of mean grain size, and was covered with pine trees (> 100 years old). The samples from the upper part of the dune yielded quartz OSL ages ranging 0.5 ~ 0.7 ka. Therefore, it is likely that the dune developed at least before the Little Ice Age and became what it is today about one century ago.

粒界에서의 터널링으로 解析한 薄膜트랜지스터의 電流-電壓 特性 (I-V Characteristics of the TFT Analyzed by Tunneling in Grain Boundaries)

  • 마대영
    • 대한전자공학회논문지
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    • 제26권6호
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    • pp.23-29
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    • 1989
  • 多結晶 薄膜트랜지스터의 電界效果 解析을 위한 物理的인 모델을 제시하였다. 본 논문의 모델에서는 粒子(grain) 하나를 單結晶 트랜지스터로 粒界(grain boundary)를 電位障壁을 갖는 絶緣體로 가정하였다. 따라서 多結晶 薄膜트랜지스터 粒子인 單結晶 트랜지스터들이 粒界를 경계로 직렬연결 되어 있는 것으로 간주하였으며, 粒子에 흐르는 電流는 gradual channel 근사식으로 또 粒界에 흐르는 電流는 터널링 이론으로 계산하였다. 出力特性과 비교하므로써 채널에서의 電位, 電界분포 등을 구하였으며 이결과들을 통해 본 모델을 검토하였다. 본 논문에서 제시한 다결정박막트랜지스터의 전도모델이 문턱전압이상의 素子동작해석에 타당함을 밝혔다.

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CBN 단입자의 연삭특성에 관한 연구 (A study on grinding characteristics of CBN single abrasive grain)

  • 팽현진;손명환
    • 대한기계학회논문집
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    • 제14권6호
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    • pp.1533-1541
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    • 1990
  • 본 연구에서는 초입자인 CBN단입자와 기존의 연삭입자인 SiC단입자를 연삭입 자로 하고, 경강과 연강의 공작물재료를 단입자로 연삭했을 때의 표면거칠기 특성을 단입자의 절삭현상으로부터 비교 구명하고 CBN입자에 의한 연삭의 경우가 표면거칠기 가 악화하는 원인을 구명함으로써 이것을 토대로 하여 CBN입자의 실용 보편화의 자료 로 삼고자 하였다.

고 망간강 2상 혼합조직의 열적 안정성에 관한 연구 (A Study on the Thermal Stability of Duplex High Mn-Steel Structure)

  • 위명용
    • 열처리공학회지
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    • 제5권1호
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    • pp.13-22
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    • 1992
  • The thermal stability of duplex high Mn-steel structure have been investigated using 15%Mn~1.0~2.4%C steels which are composed of ${\gamma}$-and ${\theta}$-phases in the range of temperature from 900 to $1100^{\circ}C$, and time from 50 to 300h. The results are as follows ; 1) The grain growth in single-phase region proceeds by grain boundary migration and the relation between mean radius $\bar{r}$ and annealing time t is described as follows ; $\bar{r}^2-{\bar{r}_0}^2=k_0{\cdot}t$ 2) The grain growth of duplex, (${\gamma}+{\theta}$), strucrure is slower than that single phase because the chemical composition of ${\gamma}$-and ${\theta}$-phases differs esch others. 3) The grain of (${\gamma}+{\theta}$) duplex structure grow slowly in a mode of Ostwald ripening. Because grain boundaries of ${\gamma}$-phase migrate under a restriction of pinning by ${\theta}$-phases. 4) In the duplex structures. the dispersed structures change to the dual-structures, as the volume fraction of the dispersed second-phase increase. Consequently, the growth-law, which is controlled by boundary-diffusion change to that of the volume diffusion-mechanism.

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Microstructure and Trapped Magnetic Field of Multi-Seeded Single Domain YBCO

  • Bierlich, J.;Habisreuther, T.;Litzkendorf, D.;Zeisberger, M.;Gawalek, W.
    • Progress in Superconductivity
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    • 제8권1호
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    • pp.8-15
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    • 2006
  • The size of the superconducting domains and the critical current density inside these domains have to be enhanced for most of cryomagnetic applications of melt-textured YBCO bulks. To enlarge the size of the domains we studied the multi-seeding technique based on a well-established procedure for preparing high quality YBCO monoliths using self-made SmBCO seeds. The distance between the seeds was optimised as a result of the investigation of the effects of various seed distances on the characteristics of the grain boundary Junctions. The influences of a-b plane intersections and c-axis misalignments were researched. Thereby, a small range of tolerance of the misorientations between the seed crystals was found. Field mapping was applied to control the materials quality and the superconductor's grain structure was investigated using polarisation microscopy. YBCO function elements with iou. seeds in a line and an arrangement of making type (100)/(100) and (110)/(110) boundary junctions, respectively, were processed. The trapped field profile in both sample types shows single domain behaviour. To demonstrate the potential of the multi-seeding method a ring-shaped sample was processed by placing sixteen seeds in a way to make both (100)/(100) and (110)/(110) grain junctions at the same time. The results up to now are very promising to prepare large single domain melt-textured YBCO semi-finished products in complex shapes.

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Pb(Zr, Ti)$O_3$ 박막에서 결정립 크기 포화 현상에 관한 연구 (A Study on the Saturation of Grain Size in Pb(Zr, Ti)$O_3$ Thin Films)

  • 이장식;김찬수;주승기
    • 한국세라믹학회지
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    • 제37권6호
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    • pp.530-536
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    • 2000
  • During the grain growth of the PZT thin films by selective nucleation method using PZT seed, it was found that the grain size was saturated with the annealing temperature. The saturation of grain size was analyzed by the interfacial energy which appeared during the crystallization. The factors affecting the saturation of grain size were found to be the interfacial energy between perovskite phase and pyrochlore phase, and PZT thin film and the bottom Pt electrode. When the ion damage was introduced to the grain-size saturated PZT thin films, further lateral growth was observed. Pt bottom electrode thickness was changed to control the interfacial energy between the PZT thin film and the Pt bottom electrode. When Pt thickness was increased, the grain size was also increased, because the lattice parameter of Pt films was increased with the thickness of the Pt films. The incubation time of nucleation was increased with the amount of the ion damage on the Pt films.

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Critical currents across grain boundaries in YBCO : The role of grain boundary structure

  • Miller Dean J.;Gray Kenneth E.;Field Michael B.;Kim, Dong-Ho
    • Progress in Superconductivity
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    • 제1권1호
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    • pp.14-19
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    • 1999
  • Measurements across single grain boundaries in YBCO thin films and bulk bicrystals have been used to demonstrate the influence of grain boundary structure on the critical current carried across the grain boundary. In particular, we show that one role of grain boundary structure is to change the degree of pinning along the boundary, thereby influencing the critical current. This effect can be used to explain the large difference in critical current density across grain boundaries in thin films compared to that for bulk bicrystal. These differences illustrate the distinction between the intrinsic mechanism of coupling across the grain boundary that determines the maximum possible critical current across a boundary and the measured critical current which is limited by dissipation due to the motion of vortices.

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BaTiO3에서 SiO2 첨가에 의한 비정상 입성장과 단결정 성장 (Effect of SiO2 on Abnormal Grain Growth and Single Crystal Growth in BaTiO3)

  • 김재석;허태무;이종봉;이호용
    • 한국세라믹학회지
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    • 제41권3호
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    • pp.266-271
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    • 2004
  • BaTiO$_3$ 소결체에 국부적으로 SiO$_2$를 첨가하고 열처리하여 비정상 입성장을 유도하였다. 열처리 중에 SiO$_2$가 첨가되지 않은 부분에서는 BaTiO$_3$ 기지상 입자의 성장이 아주 느리게 일어났으나, SiO$_2$가 첨가된 부분에서는 BaTiO$_3$ 기지상 입자가 빠르게 성장하였다. 장시간 열처리 후에는 SiO$_2$가 첨가된 부분에서 비정상 입자가 생성되었고, 열처리 중에 연속적으로 성장하여 2 cm 크기 이상으로 성장하였다. 성장한 비정상 입자내부에는 (111) double twin 또는 single twin 등의 결함이 관찰되지 않아, 국부적으로 첨가된 SiO$_2$에 의하여 생성된 액상에 의하여 비정상 입자와 단결정이 성장하였다. 이러한 결과는 BaTiO$_3$계에서 액상 분포의 불균일으로 비정상 입성장이 유도될 수 있으며, 또한 비정상 입성장을 이용하여 쌍정면 결함을 포함하지 않는 cm크기의 BaTiO$_3$ 단결정을 제조할 수 있음을 보였다.