• Journal of Welding and Joining
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• 제20권5호
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• pp.93-98
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• 2002

The effect of bonding misfit on single crystallization of transient liquid phase (TLP) bonded joints of single crystal superalloy CMSX-2 was investigated using MBF-80 insert metal. The bonding misfit was defined by (100) twist angle (rotating angle) at bonded interface. TLP bonding of specimens was carried out at 1523K for 1.8ks in vacuum. The post-bond heat treatment consisted of the solution and sequential two step aging treatment was conducted in the Ar atmosphere. The crystallographic orientation analysis across the TLP bonded joints was conducted three dimensionally using the electron back scattering pattern (EBSP) method. EBSP analyses f3r the bonded and post bonded heat treated specimens were conducted. All bonded joints had misorientation centering around the bonded interface for as-bonded and post-bond heat treated specimens with rotating angle. The average misorientation angle between both solid phases in bonded interlayer was almost identical to the rotating angle at bonded interface. HRTEM observation revealed that the atom arrangement of both solid phases in bonded interlayer was quite different across the bonded interface. It followed that grain boundary was formed in bonded interface. It was confirmed that epitaxial growth of the solid phase occurred from the base metal substrates during TLP bonding and single crystallization could not be achieved in joints with rotating angle.

• Journal of Welding and Joining
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• 제13권1호
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• pp.89-102
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• 1995

The evaluation of reheat cracking susceptibility in CrMoV turbine rotor steel was performed using thermally simulated heat affected zones. The examinations were carried out in terms of microstructural characterization, microhardness measurement and a Charpy type notch opening three point bend test. It was found that reheat cracking susceptibility increased as the peak temperature increased. This effect was due to the combined effects of the carbide dissolution and unrestricted grain growth at 1350.deg. C peak temperature. Reheat cracking susceptibility was estimated based on microhardness measurement and prior austenite grain size. It was established that for this particular material, reheat cracking in coarse grained heat affected zone can be eliminated if the microhardness is below about 360DPH and the grain size is below about 30.mu.m. It is evident that reheat cracking susceptibility can be eliminated or reduced by carefully controlling the welding parameters such that a refined structure is produced in the coarse grained heat affected zone.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.395-397
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• 2002

Dielectric thin films of Pb$\_$0.72/La$\_$0.28/Ti$\_$0.93/O$_3$(PLT(28)) have been deposited on Pt(111)/Ti/SiO$_2$/Si(100) substrates in-situ by pulsed laser deposition using different annealing and deposition processes. We have investigated the effect of hydrogen annealing on the ferroelectric properties of PLT thin films and found that the annealing process causes the diffusion of hydrogen into the ferroelectric film resulting in the destruction of polarization. Two-step process to grow PLT films was adopted and verified to be useful to enlarge the grain size of the film. Structural properties including dielectric constant, and ferroelectric characteristics of PLT thin films were shown to be strongly influenced by grain size. The film deposited by using two-step process including pre-annealing treatment has a strong (111) orientation. However, the films deposited by using single-step process with hydrogen annealing process shows the smallest grain size.

• E2M - 전기 전자와 첨단 소재
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• 제8권2호
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• pp.158-164
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• 1995

Solid solutions Sr$_{2}$(Ta$_{1-x}$ Nb$_{x}$)$_{2}$O$_{7}$, (x=0.0-1.0), composed of strontium tantalate(Tc=-107.deg. C) and strontium-niobate(Tc=1342.deg. C) were prepared by the conventional mixed oxide method and the flux method(molten salt synthesis method). Phase relation, sintering temperature, grain-orientation and dielectric properties for sintered ceramic samples were investigated with different compositions. Both Curie temperature and dielectric constant at Curie temperature were increased, and sintering behavior and the degree of grain-orientation were improved with the increase of Nb content. The single phase Sr$_{2}$(Ta/sib 1-x/Nb$_{x}$)$_{2}$O$_{7}$ powder was synthesized by using the flux method at lower temperatures, and sintering temperature was also reduced by using the flux method-derived powder than using the mixed oxide-derived powder. Sintering characteristics and dielectric properties of the specimens prepared by the flux method were better than those derived through the conventional mixed oxide method.thod.hod.

• 한국초전도ㆍ저온공학회논문지
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• 제21권4호
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• pp.19-23
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• 2019

A large grain YBCO bulk superconductor is fabricated by the top-seeded melt growth (TSMG) method. In the TSMG process, the seed crystal is placed on the top surface of a partially melted compact and therefore the seed crystal is frequently tilted during the melt process due to intrinsic unstable nature of Y211 particle +liquid phase mixture. In this work, we report the successful growth of single-domain YBCO bulk superconductors by a bottom-seeded melt growth (BSMG) method. Investigations on the trapped magnetic field and the microstructures of the synthesized specimens show that a bottom-seeded melt growth method has hardly affected on the crystal growth behavior, the microstructure development and the magnetic properties of the large grain YBCO bulk superconductors. The bottom-seeded melt growth method is clearly beneficial for the stable control of seed orientation through the melt process for the fabrication of a large grain YBCO bulk superconductor.

• 한국전기전자재료학회논문지
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• 제37권1호
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• pp.26-35
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• 2024

Aluminum-induced crystallization (AIC) as a route to reduce the fabrication cost and to obtain polycrystalline Si (p-Si) thin-film of large grain size is a promising alternative of single-crystalline (s-Si) substrate or p-Si thin-film obtained by conventional methods such as solid phase crystallization (SPC) and laser-induced crystallization (LIC). As the AIC process occurs at the interface between a-Si and Al thin-films, there are various process and interface parameters. Also, it directly means that there is a certain parametric window to obtain p-Si of large grain size having uniform crystal orientation. In this article, we investigate the effect of the various process and interface parameters to obtain p-Si of large grain size and uniform crystal orientation from the literature review. We also suggest the potential use of the p-Si as a virtual substrate for the growth of various compound semiconductors in a form of low-dimension as well as thin-film as a way for their monolithic integration on Si.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.465-465
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• 2012

In this study, we developed an Al2O3 nanolaminated single gas barrier layer using a Neutral Beam Assisted Sputtering (NBAS) process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nanocrystal phase with various grain sizes and lead to the formation of a nanolaminated structure in the single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the nanolaminated Al2O3 thin films by NBAS process have improved more than 40% compared with that of conventional Al2O3 layers by the RF magnetron sputtering process under the same sputtering conditions.

• 한국식품조리과학회지
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• 제29권2호
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• pp.193-208
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• 2013

The purpose of this study was to investigate the characteristics and brewing methods of Danyangju, which is one of the traditional single brewed rice liquors using Korean ancient literatures publishes from the 1400's to 1600's. Total 32 Danyangju products and 55 brewing methods were found by reviewing the ancient literatures. Danyangju products could be classified into four groups depending on type of grain used: 1) 13 Danyangju products with non-glutinous rice, 2) 14 products with waxy rice, 3) 4 products with mixture of waxy and nonwaxy rice, and 4) 2 products with barley. In this paper, not only ingredients, formula and utensils needed for preparation of Danyangju, but also brewing characteristics and terminology were reviewed. The findings on Danyangju in this study would be useful to improve the brewing methods and quality of Korean traditional liquors.

• 한국작물학회지
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• 제55권3호
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• pp.232-238
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• 2010

2007년부터 2009년까지 3년간 보리이모작으로 옥수수를 6월 만파 시 사료용 및 종실용으로의 생육 및 수량변화를 2007 및 2009년의 4월 하순 적파 및 2008년 5월 하순 옥수수와 대비하여 살펴보았는데 그 결과는 다음과 같다. 1. 4월 하순 적파에 비해 보리 이모작으로 6월 중 하순 만파 시 옥수수의 생육 많이 감소하여 사료 종실의 수량성이 20~30% 감소하였지만, 이모작으로 동계 재배한 보리의 사료 종실의 수량성을 합할 경우 년간 전체 수량성은 30~40% 증가하였다. 2. 6월 만파 시 옥수수 부위별로는 간엽보다 이삭(종실)의 감소가 적었다. 사료 및 종실용으로 수량감소가 가장 적었던 품종은 광평옥이었으며, 6월 만파에서도 850 kg $10a^{-1}$의 수량성을 얻을 수 있었다. 따라서 이모작 옥수수는 사료용 보다 종실용으로 만파적응 품종 및 재배법의 개발이 필요한 것으로 나타났다. 3. 6월 만파 옥수수는 4월 적파 옥수수보다 유효적산온도의 증가와 더불어 출사일수는 40일 가량 단축되었고, 만파에 따라 출사기는 1달 정도 늦어 수확적기는 사료용이 9월 하순, 종실용이 10월 중순으로 4월 적파 옥수수에 비해 수확 시 기후조건은 좋은 것으로 나타났다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.286-289
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• 2001

Single phase CuGaS$_2$ thin film with the highest diffraction peak of (112) at diffraction angle (2$\theta$) of 28.8$^{\circ}$ was made at substrate temperature of 7$0^{\circ}C$, annealing temperature of 35$0^{\circ}C$ and annealing time of 60 min. And second highest (204) peak was shown at diffraction angle (2$\theta$) of 49.1$^{\circ}$. Lattice constant of a and c of that CuGaS$_2$ thin film was 5.37 $\AA$ and 10.54 $\AA$ respectively. The greatest grain size of the thin film was about 1${\mu}{\textrm}{m}$. The (112) peak of single phase of CuGaS$_2$ thin film at annealing temperature of 35$0^{\circ}C$ with excess S supply was appeared with a little higher about 10 % than that of no exces S supply And the resistivity, mobility and hole density at room temperature of p-type CuGaS$_2$ thin film with best crystalline was 1.4 $\Omega$cm, 15 cm2/V . sec and 2.9$\times$10$^{17}$ cm$^{-3}$ respectively. It was known that carrier concentration had considerable effect than mobility on variety of resistivity of the fabricated CuGaS$_2$ thin film, and the polycrystalline CuGaS$_2$ thin films were made at these conditions were all p-type.