• Journal of Sensor Science and Technology
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• v.9 no.4
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• pp.297-306
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• 2000

To improve the performance of MEMS devices, fabricating single-crystalline silicon HARS (high aspect ratio structure) with thicknesses of up to several tens of micrometers has been an active research topic in recent years. However, achieving electrical isolation, which is required for actuating a structure or sensing an electrical signal, has been one of the main problems in single-crystalline silicon HARS fabrication technologies. In this paper, new isolation technologies using high aspect ratio oxide beams and sidewalls are developed to achieve electrical isolation between electrodes of single-crystalline silicon HARS. The developed isolation technologies use insulating oxide structural supports from either the structural sides or from the bottom. In this case because the trench oxide supports have a depth of several tens of ${\mu}m$, the effects of residual stress must be considered. In this paper, insulating supports are fabricated using PECVD TEOS films, the residual stress of the insulating supports is measured, and the effect of the residual stress on the structure is analyzed. It is shown using microresonators, that the developed isolation technologies can be effectively used for HARS using single-crystalline silicon.

• Journal of Sensor Science and Technology
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• v.22 no.3
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• pp.175-180
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• 2013

This paper describes the characteristics of cubic silicon carbide (3C-SiC) films grown on a carbonized Si(100) substrate, using hexamethyldisilane (HMDS, $Si_2(CH_3)_6$) as a safe organosilane single precursor in a nonflammable $H_2$/Ar ($H_2$ in Ar) mixture carrier gas by atmospheric pressure chemical vapor deposition (APCVD) at $1280^{\circ}C$. The growth process was performed under various conditions to determine the optimized growth and carbonization condition. Under the optimized condition, grown film has a single crystalline 3C-SiC with well crystallinity, small voids, low residual stress, low carrier concentration, and low RMS. Therefore, the 3C-SiC film on the carbonized Si (100) substrate is suitable to power device and MEMS fields.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.342-344
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• 1995

Using piezoresistive effects of single-crystal and poly-crystalline silicon, pressure sensors of the same pattern were fabricated for comparison of temperature characteristics. Optimum size and aspect ratio of rectangular sensor diaphragm were calculated by FEM. For polsilicon pressure sensor, polysilicon resistors of Wheatstone bridge were deposited by LPCVD to be used in a wide' temperature range. Polysilicon pressure sensors showed more stable temperature characteristics than single-crysta1 silicon in the range of $-20\sim125[^{\circ}C]$. To get low TCO (Temperature Coefficient of Offset), below $\pm$3 [${\mu}V/V/^{\circ}C$], it is needed for each TCR of piezoresistors to have a deviation within $\pm25[ppm/^{\circ}C]$ less than $\pm500[ppm/^{\circ}C]$ of resistors for polysilicon pressure sensor can result in low TCS(Temperature Coefficient of Sensitivity) of -0.1[%FS/$^{\circ}C$].

• Journal of the Korean Society for Nondestructive Testing
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• v.36 no.1
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• pp.1-8
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• 2016

Single crystalline silicon wafers having (100), (110), and (111) directions are employed as specimens for obtaining slowness profiles. Leaky Lamb waves (LLW) from immersed wafers were detected by varying the incident angles of the specimens and rotating the specimens. From an analysis of LLW signals for different propagation directions and phase velocities of each specimen, slowness profiles were obtained, which showed a unique symmetry with different symmetric axes. Slowness profiles were compared with elastic moduli of each wafer. They showed the same symmetries as crystal structures. In addition, slowness profiles showed expected patterns and values that can be inferred from elastic moduli. This implies that slowness profiles can be used to examine crystal structures of anisotropic solids.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.5
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• pp.301-306
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• 2017

Wire electrical discharge machining (WEDM) process was evaluated to slice Silicon (Si) for various applications. Specifically, various Si workpieces with various resistances, such as single and multi crystalline Si bricks and wafers were used. As conventional slicing processes, such as slurry-on or diamond-on wire slicing, are based on mechanical abrasions between Si and abrasive, there is a limitation to decrease the wafer thickness as well as kerf-loss. Especially, when the wafer thickness is less than $150{\mu}m$, wafer breakage increases dramatically during the slicing process. Single crystalline P-type Si bricks and wafers were successively sliced with considerable slicing speed regardless of its growth direction. Also, typical defects, such as microcracks, craters, microholes, and debris, were introduced when Si was sliced by electrical discharge. Also, it was found that defect type is also dependent on resistance of Si. Consequently, this study confirmed the feasibility of slicing single crystalline Si by WEDM.

• 한국태양에너지학회:학술대회논문집
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• 2012.03a
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• pp.237-242
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• 2012

At present, crystalline solar cells take up a significant percentage of the solar industry. The ways of increasing the efficiency of crystalline solar cell are texturing and AR(Anti-Reflection) coating, and the purpose of these technologies is to increase the amount of available light on the solar cell by reducing the reflectivity. The reflectance of crystalline silicon solar cell combined with such technologies will be able to predict using the proposed simulation in this paper. The simulation algorithm was made using MATLAB, and it is a combination of the theories of reflection in textured wafer and in anti-reflection coated wafer. The simulation results were divided into three wavelength band and were compared with actual reflectance measured by a spectrometer. The wavelength band from 300 to 380 was named ultraviolet region and the wavelength band from 380 to 780 is named visible region. Finally, the wavelength band from 780 to 1200 named infrared region. When compared with measured reflection data, the simulation results had a small error from 0.4 to 0.5[%] in visible region. The error occurred in the rest two regions is larger than visible region. The extreme error occurred the infrared region is due to internal reflection effect, but in the ultraviolet region, the rationale on reduction phenomenon of reflectance occurred in small range did not proved. If these problem will be solve, this simulation will have high reliability more than now and be able to predict the reflectance of solar cells.

• 한국전자현미경학회:학술대회논문집
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• 2004.11a
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• pp.77-81
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• 2004

• Journal of Energy Engineering
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• v.21 no.3
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• pp.243-248
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• 2012

In this study, The report analysed the characteristics of power drop and damage of surface in solar cell through high temperature and humidity test. The solar cells were tested during the 1000hr in $85^{\circ}C$ temperature and 85% humidity conditions, that excerpted standard of PV Module(KS C IEC-61215). An analysis of the cell surface through EL(Electroluminescence), the cell has partly change of surface in yearly. Single-crystalline Solar cell efficiency is decreased from 17.7% to 15.6% and decreasing rate is 11.9%. On the other hand, Poly-crystalline Solar cell efficiency is decreased from 15.5% to 14.0% and decreasing rate is 9.3%. A comparison of the fill factor for analysis of electro characteristic in yearly, Single-crystalline Solar cell efficiency is decreased from 78.7% to 78.1% and decreasing rate is 4.7%. On the other hand, Poly-crystalline Solar cell efficiency is decreased from 78.1% to 76.7% and decreasing rate is 1.8%. Single-crystalline has more bigger power drop than poly-crystalline by the silicon purity and silicon atom arrangement. Also, FF decreasing rate has more bigger drop than efficiency decreasing rate for the reason that the damage of surface by exterior environmental factor is the more influence in cell than other reason that is decreasing FF by damage of p-n junction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.281-286
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• 2002

In odder to investigate the magnetic properties of CoCr-based bilayered thin films on kind of underlayer, we introduced amorphous Si layer to Co-Cr(-Ta) magnetic layer as underlayer. First, we prepared CoCr and CoCrTa single layer using the Facing Targets Sputtering system to investigate theirs properties. It was revealed that with increasing the film thickness of CoCr, CoCrTa single layer, crystalline orientation and perpendicular coercivity was improved. The CoCrTa thin film showed bettor crystalline and magnetic characteristics than CoCr thin film. As a result of investigating magnetic properties of CoCr and CoCrTa magnetic layer on introducing the Si underlayer, perpendicular coercivity and saturation magnetization of CoCr/Si and CoCrTa/Si bilayered thin film were decreased due to the increased grain size and diffusion of Si atoms to magnetic layer. And they showed constant with increasing the film thickness of Si thin film. However, in case of CoCrTa/Si bilayered thin film, in-plane coercivity was controlled low at about 250Oe. The c-axis orientations of CoCr/si and CoCrTa/Si bilayered thin film showed a good crystalline characteristics as about $2^{\circ}$.

• 한국태양에너지학회:학술대회논문집
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• 2008.04a
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• pp.252-256
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• 2008

Photovoltaic (PV) modules output changes noticeable with variations in temperature and irradiance. In general it is has been shown that a $1^{\circ}C$ increase in temperature results in a 0.5% drop in output. In this paper, seven PV module types are analyzed for variation in temperature and irradiance, and the resulting output characteristics examined. The 7 modules types utilized are as follows; 3 poly crystalline modules, 2 single crystalline modules, 1 back contact single crystalline module and 1 HIT module. 3 groups of experiments are then conducted on the modules; tests with varying irradiance values, tests with module temperature varying under $25^{\circ}C$ and tests with module temperature varying over $25^{\circ}C$. The experiments results show that as temperature rises the follow is observed; Pmax decreases by 0.6%, Voc decreases by about 0.4%, and Isc increasing by between 0.03%${\sim}$0.08%. In addition, an irradiance decrease of 100 w/m2 translates into a 10% drop in Pmax.