• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.37 no.12
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• pp.1245-1251
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• 2009

This paper describes the research on the non-eroding throat insert materials under condition of high-temperature, high-pressure, and long-burn time. C/SiC, CIT and W/$Y_2O_3$ were chosen and tested in thermal protection evaluation motor of burning time 20 seconds. From the test results, a heat resistance of W/$Y_2O_3$ was the most excellent among them, but was happened crack on material surface. Thermal reaction characteristics and heat resistance of these materials and feasibility of W/$Y_2O_3$ as throat material were ascertained.

• Journal of Radiation Protection and Research
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• v.42 no.2
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• pp.91-97
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• 2017

Background: A gamma energy identifying algorithm using spectral decomposition combined with smoothing method was suggested to confirm the existence of the artificial radio isotopes. The algorithm is composed by original pattern recognition method and smoothing method to enhance the performance to identify gamma energy of radiation sensors that have low energy resolution. Materials and Methods: The gamma energy identifying algorithm for the compact radiation sensor is a three-step of refinement process. Firstly, the magnitude set is calculated by the original spectral decomposition. Secondly, the magnitude of modeling error in the magnitude set is reduced by the smoothing method. Thirdly, the expected gamma energy is finally decided based on the enhanced magnitude set as a result of the spectral decomposition with the smoothing method. The algorithm was optimized for the designed radiation sensor composed of a CsI (Tl) scintillator and a silicon pin diode. Results and Discussion: The two performance parameters used to estimate the algorithm are the accuracy of expected gamma energy and the number of repeated calculations. The original gamma energy was accurately identified with the single energy of gamma radiation by adapting this modeling error reduction method. Also the average error decreased by half with the multi energies of gamma radiation in comparison to the original spectral decomposition. In addition, the number of repeated calculations also decreased by half even in low fluence conditions under $10^4$ ($/0.09cm^2$ of the scintillator surface). Conclusion: Through the development of this algorithm, we have confirmed the possibility of developing a product that can identify artificial radionuclides nearby using inexpensive radiation sensors that are easy to use by the public. Therefore, it can contribute to reduce the anxiety of the public exposure by determining the presence of artificial radionuclides in the vicinity.

• Journal of Convergence for Information Technology
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• v.11 no.10
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• pp.270-276
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• 2021

The purpose of this study was to investigate the effects of home care hair treatment characteristics and frequency on hair during permanent wave treatment. The hair treatments distributed on the market were classified into cationic surfactants and silicone oil. Hair treatment was performed 5 times, 10 times, 20 times differently according to the frequency of use, and hair permanent wave was performed. The hair thickness, tensile strength, epidermal observation using SEM, and hair component analysis using EDS were performed as experimental methods. The results of the experiment showed that the natural-derived ingredient was the main ingredient, and the cationic surface activity and silicon oil-free product group had high hair protection effect. Therefore, the product group using natural ingredients should be further researched and developed, and the study on the method and frequency of use of products with irritant chemical ingredients should be conducted.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.43-55
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• 2000

In traditional electronic packages the die and the substrate are interconnected with fine wire. Wire bonding technology is limited to bond pads around the peripheral of the die. As the demand for I/O increases, there will be limitations with wire bonding technology. Flip chip technology eliminates the need for wire bonding by redistributing the bond pads over the entire surface of the die. Instead of wires, the die is attached to the substrate utilizing a direct solder connection. Although several steps and processes are eliminated when utilizing flip chip technology, there are several new problems that must be overcome. The main issue is the mismatch in the coefficient of thermal expansion (CTE) of the silicon die and the substrate. This mismatch will cause premature solder Joint failure. This issue can be compensated for by the use of an underfill material between the die and the substrate. Underfill helps to extend the working life of the device by providing environmental protection and structural integrity. Flux residues may interfere with the flow of underfill encapsulants causing gross solder voids and premature failure of the solder connection. Furthermore, flux residues may chemically react with the underfill polymer causing a change in its mechanical and thermal properties. As flip chip packages decrease in size, cleaning becomes more challenging. While package size continues to decrease, the total number of 1/0 continue to increase. As the I/O increases, the array density of the package increases and as the array density increases, the pitch decreases. If the pitch is decreasing, the standoff is also decreasing. This paper will present the keys to successful flip chip cleaning processes. Process parameters such as time, temperature, solvency, and impingement energy required for successful cleaning will be addressed. Flip chip packages will be cleaned and subjected to JEDEC level 3 testing, followed by accelerated stress testing. The devices will then be analyzed using acoustic microscopy and the results and conclusions reported.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.26 no.1
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• pp.41-58
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• 2000

Recently the harmfulness of W radiation is in creasing due to encironmental pollution. Environmental population may also play a role in global decrease of ozone layer, A major consequence of ozone depletion is increase in solar ultra violet radiation received at the earth's surface excessive exposure to W radiation cause a lot of problems in our skin. Plant extract that possess antioxidative activities has been reported to retard the oxidation process in product to which they have been added. Plant are alived under solar light. So it is expect the plants have so many protection mechanisms and UV absorbent ingredients against ultra violet radiation such as UVB, UVA. Plant extract which were flavonoids, alkaloids and others could be transformed into UV absorber by chemical modification. Therefore with the aim of finding alternative natural absorber that can safely be used in cosmetic, we have screened various extract for their UV absorbent effect. Thus, the cosmetic safety against human skin, antimicrobial effects and others could be improved by using the silicon.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.122-122
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• 1999

Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.

• Journal of Radiation Protection and Research
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• v.14 no.1
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• pp.24-33
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• 1989

The peripheral dose, defined as the dose outside therapeutic photon fields, was estimated for 6MV X-ray linear accelerator. The measurements were performed using silicon diode detectors controlled by automatic controlled water phantom. The effects of field size, collimator position, presence or absence of wedge filter, and wedge angle were analyzed. The results were as follows 1. The peripheral dose decreases as the distance from field margin increases and it is more than 2.4% of central axis maximum dose even at 15cm distance from field margin. 2. Maximum build-up of peripheral dose is at 2-3 mm from the water surface and drops to a minimum at 1.5cm depth and then the dose increase again. 3. The peripheral dose increases as the field size. increases. At the short distance from field margin, the difference of peripheral dose between 5 $\times\;5cm^2$ and 20 $\times\;20cm^2$ field size reaches more than 2 fold. 4. The peripheral dose is higher along the upper collimator than along the lower collimator. The differences is less than 1%. 5. The presence of wedge filter increases peripheral dose. And the peripheral dose is higher along the blade side of wedge filter than along the ridge side. The difference is about 3% at 5cm distance from the field margin for 15 $\times\;15cm^2$ field size and 60$^{\circ}$ wedge filter. 6. The Peripheral dose of wedge filter increases as the wedge filter angle increases and the increasing ratio is about 2 fold in 60$^{\circ}$wedge filter compared with open field.