• Journal of the Semiconductor & Display Technology
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• v.13 no.1
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• pp.13-17
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• 2014

Since the semiconductor manufacturing requires the silicon wafers with extraordinary degree of surface flatness, the surface polishing of wafers from ingot cutting is an important process for deciding surface quality of wafers. The present study introduces the development of wafer polishing equipment and, especially, the wafer polishing head that employs the forced self-driving of installed silicon wafer as well as the wax wafer mounting technique. A series of wafer polishing tests have been carried out to investigate the effects of self-driving function in wafer polishing head. The test results for wafer planarization showed that the LLS counts and SBIR of polished wafer surfaces were generally improved by adopting the self-driven polishing head in wafer polishing stations.

• Journal of Digital Contents Society
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• v.3 no.1
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• pp.113-122
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• 2002

The flatness of a silicon wafer concerned with ULSI chip is one of the most critical parameters ensuring high yield of wafers. The polishing process that measures and controls the flatness of a silicon wafer is one of the important process in various processes for production silicon wafer, which are still being done today by manual. But engineers in polishing process are requested to have many experiences and to check silicon wafers one by one. In this paper, we propose an algorithm used interpolation that estimates wafer's shape and sorts wafers automatically, then we can control the flatness of wafers in polishing process by automatic system.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.6
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• pp.27-36
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• 2003

The Electro-Rheological (ER) fluid has been used to the ultraprecision polishing of single crystal silicon as new polishing slurry whose properties such as yield stress and particle structure changed with the application of an electric field. In this work, it is aimed to find the effective parameters in the ER fluid on material removal in the polishing system whose structure is similar to that of the simple hydrodynamic bearing. The generated pressure in the gap between a moving wall and a workpiece, as well as the electric field-induced stress of the mixture of ER fluid-abrasives, is evaluated experimentally, and their influence on the polishing of single crystal silicon is analyzed. Moreover, the behavior of abrasive and ER particles is described.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.433-434
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• 2002

Chemical mechanical polishing refers to a process by which silicon and partially-processed integrated circuits (IC's) built on silicon substrates are polished to produce planar surfaces for the continued manufacturing of IC's. Chemical mechanical polishing is done by pressing the silicon wafer, face down, onto a rotating platen that is covered by a rough polyurethane pad. During rotation, the pad is flooded with a slurry that contains nanoscale particles. The pad deforms and the roughness of the surface entrains the slurry into the interface. The asperities contact the wafer and the surface is polished in a three-body abrasion process. The contact of the wafer with the 'soft' pad produces a unique elastohydrodynamic situation in which a suction force is imposed at the interface. This added force is non-uniform and can be on the order of the applied pressure on the wafer. We have measured the magnitude and spatial distribution of this suction force. This force will be described within the context of a model of the sliding of hard surfaces on soft substrates.

• Journal of the Korean Ceramic Society
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• v.44 no.2 s.297
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• pp.98-102
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• 2007

The stability of slurry and removal rate during recycling of colloidal silica slurry was evaluated in silicon wafer polishing. The particle size distribution, pH, and zeta potential were measured to investigate the stability of colloidal silica. Large particles appeared as recycling time increased while average size of slurry did not change. Large particles were identified by EDS(energy dispersive spectrometer) as foreign substances from pad or abraded silicon flakes during polishing. As the recycling time increased, pH of slurry decreased and removal rate of silicon reduced but zeta potential decreased inversely. Hence, it could be mentioned that decrease of removal rate is related to consumption of $OH^-$ ions during recycling. Attention should be given to the control of pH of slurry during polishing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.59-60
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• 2006

The slurry stability and removal rate during recycling of slurry in silicon wafer polishing was studied. Average abrasive size of slurry was not changed with recycling time, however, large particles appeared as recycling time increased. Large particles were related foreign substances from pad or abraded silicon flakes during polishing. The removal rate as well as pH of slurry was decreased as recycling time increased. It suggests that the consumption of OH ions during recycling is the main cause of decrease of removal rate. Therefore, it is important to control pH of slurry to obtain optimum removal rate during polishing.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.435-437
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• 2002

Polishing of copper, a process called copper chemical mechanical polishing, is a critical, intermediate step in the planarization of silicon wafers. During polishing, the electrodeposited copper films are removed by slurries: and the differential polishing rates between copper and the surrounding silicon dioxide leads to a greater removal of the copper. The differential polishing develops dimples and furrows; and the process is called dishing and erosion. In this work, we present the results of experiments on dishing and erosion of copper-CMP, using patterned silicon wafers. Results are analyzed for the pattern factors and properties of the copper layers. Three types of pads - plain, perforated, and grooved - were used for polishing. The effect of slurry chemistries and pad soaking is also reported.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.303-307
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• 2007

This paper investigated the effect of the pad buffing process on the material removal characteristics and pad stabilization during silicon chemical mechanical polishing. The pads surface were controlled by the buffing process using a buffer made by the sandpaper. The buffing process is based on abrasive machining by using a high speed sandpaper. The controlled pad by the buffing process show less deformation deviation and stable material removal rate during the CMP process. In addition, the controlled pad ensure better uniformity of removal rate than comparative pads. As a result of monitoring, the controlled pad by the buffing process demonstrated constant and stable friction force signals from initial polishing stage. Therefore, the tufting process could control the pad surface to be uniform and improve the performance of the polishing pad.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1873-1876
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• 2003

Magneto-rheological polishing is a new technology used in precision polishing. It utilizes magneto-rheological fluid. nonmagnetic polishing abrasive, aqueous carrier fluids in magnetic field to remove material from a part surface. Silicon micro channel as work piece is fixed in the slurry which is made of MR fluid and CeO$_2$(10 vol%) abrasive particles. And permanent magnet rotate in the slurry to transfers magnetic force to abrasive particles by increasing yield strength of MR fluid. so, the obtained bottom surface roughness of micro channel by experiment reduced to Ra 0.010 $\mu\textrm{m}$ Rmax 0.103 $\mu\textrm{m}$ and finwall surface roughness of micro channel reduced to Ra 0.018 $\mu\textrm{m}$ Rmax 0.468 $\mu\textrm{m}$. At optimum conditions of variables, the workpiece as silicon micro channel have about 24 times smaller surface roughness than before polishing.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.355-356
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• 2008