• Applied Chemistry for Engineering
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• v.8 no.3
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• pp.395-402
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• 1997

The $SiO_2$ films were prepared by ECR(electron cyclotron resonance) plasma diffusion method, Deal-Grove model and Wolters-Zegers-van Duynhoven model were used to estimate the oxidation rate which was correlated with surface morphology for different orientation of Si(100) and Si(111). It was seen the $SiO_2$ thickness increased linearly with initial oxidation time. But oxidation rate slightly decrease with oxidation time. It was also shown that the oxidation process was controlled by the diffusion of the reactive species through the oxide layer rather than by the reaction rate at the oxide interface. The similar time dependency has been observed for thermal and plasma oxidation of silicon. From D-G model and W-Z model, the oxidation rate of Si(111) was 1.13 times greater than Si(100) because Si(111) had higher diffusion and reaction rate, these models more closely fits the experimental data. The $SiO_2$ surface roughness was found to be uniform at experimental conditions without etching although oxidation rate was increased, and to be nonuniform due to etching at experimental condition with higher microwave power and closer substrate distance.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.11
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• pp.1631-1636
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• 2010

In this study, we demonstrate a nano-scale lithograph obtained on localized (100) silicon (p-type) surface using by modified AFM (Atomic force microscope) apparatuses and by adopting controlling methods. AFM-based experimental apparatuses are connected to a customized pulse generator that supplies electricity between the conductive tip and the silicon surface, while maintaining a constant humidity throughout the lithography process. The pulse durations are controlled according to various experimental conditions. The electrochemical reaction induced by the pulses occurs in the gap between the conductive tip and silicon surface and result in the formation of nanoscale oxide particles. Oxide particles with various heights and widths can be created by AFM surface modification; the size of the oxide particle depends on the pulse durations and the applied electrical conditions under a humid environment.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.99-104
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• 2007

Porous silicon exhibiting dual optical properties, both $Febry-P{\acute{e}}rot$ fringe (optical reflectivity) and photoluminescence had been developed and used as chemical sensors. Porous silicon samples were prepared by an electrochemical etch of p-type silicon wafer (boron-doped, <100> orientation, resistivity ; $1-10{\Omega}cm$). Two different types of porous silicon, fresh porous silicon (Si-H terminated) and oxidized porous silicon (Si-OH terminated)by the thermal oxidation, were prepared. Then the samples were exposed to the vapor of various organics, such as methanol, acetone, hexane, and toluene. Both reflectivity and photoluminescence were simultaneously measured under the exposure of organic vapors for sensing VOC's. These surface-modified samples showed unique respond in both reflectivity and photoluminescence with various organic vapors. While polar molecules exhibit greater quenching photoluminescence, molecules having higher vapor pressure show greater red shift for reflectivity.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.2
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• pp.57-60
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• 2005

Semiconductor carbon nanotube was grown on oxided silicon wafer with atmosphere pressure chemical vapor deposition (APCVD) method and investigated the electrical property after thermal oxidation at $300^{\circ}C$ in air. The electrical property was measured at room temperature in air after thermal oxidation at $300^{\circ}C$ for various times in air. Semiconductor carbon nanotube was steadily changed to metallic carbon nanotube as increasing of thermal oxidation times at $300^{\circ}C$ in air. Some removed area of carbon nanotube surface was shown with transmission electron microscopy (TEM) after thermal oxidation for 6 hours at $300^{\circ}C$ in air.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.89-89
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• 2009

높은 소수반송자 수명(life-time)을 가지는 고품위 실리콘 기판은 고효율 실리콘 이종접합 태양전지 제작을 위한 중요 요소 기술 중 하나이다. 본 연구에서는 n-type c-Si 기판을 이용한 고효율 실리콘 이종접합 태양전지제작을 위해 hot water oxidation(HWO) 공정을 이용하여 고품위 실리콘 기판을 제작하였다. 실리콘 기판의 특성 분석은 Qusi-steady state photoconductance (QSSPC)를 이용하여 소수반송자 수명을 측정하였으며, 기판의 면저항 및 wetting angle을 측정하여 공정에 따른 특성변화를 분석하였다. Saw damage etching 된 기판을 웨이퍼 표면으로부터 particle, 금속 불순물, 유기물 등의 오염을 제거하기 위해 $60{\sim}85^{\circ}C$로 가열된 Ammonia수, 과산화수소수($NH_4OH/H_2O_2/H_2O$), 염산 과산화수소수($HCL/H_2O_2/H_2O$) 및 실온 희석불산(DHF) 중에 기판을 각각 10분 정도씩 침적하여, 각각의 약액 처리 후에 매회 10분 정도씩 순수(DI water)에서 rinse하여 RCA 세정을 진행한 후 HWO 공정을 통해 기판 표면에 얇은 산화막 을 형성시켜 패시베이션 해주었다. HF를 이용하여 자연산화막을 제거시 HWO 공정을 거친 기판은 매끄러운 표면과 패시베이션 영향으로 기판의 소수 반송자 수명이 증가하며, 태양전지 제작시 접촉저항을 감소시켜 효율을 증가 시킬수 있다. HWO 공정은 반응조 안의 DI water 온도와 반응 시간에 따라 life-time을 측정하여 진행하였으며, 이후 PE-CVD법으로 증착된 a-Si:H layer 및 투명전도 산화막, 금속전극을 증착하여 실리콘 이종접합 태양전지를 제작하였다.

• Journal of Power System Engineering
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• v.17 no.1
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• pp.110-115
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• 2013

The electrochemical performance and microstructure of Al-Si, Al-Si/C was investigated as anode for lithium ion battery. The Al-Si nano composite with 5 : 1 at% ratio was prepared by arc-discharge nano powder process. However, some of problem is occurred, when Al nano composite was synthesized by this manufacturing. The oxidation film is generated around Al-Si particles for passivating processing in the manufacture. The oxidation film interrupts electrical chemistry reaction during lithium ion insertion/extraction for charge and discharge. Because of the existence the oxidation film, Al-Si first cycle capacity is very lower than other examples. Therefore, carbon synthsized by glucose ($C_6H_{12}O_6$) was conducted to remove the oxidation film covered on the composite. The results showed that the first discharge cycle capacity of Al-Si/C is improved to 113mAh/g comparing with Al-Si (18.6mAh/g). Furthermore, XRD data and TEM images indicate that $Al_4C_3$ crystalline exist in Al-Si/C composite. In addition the Si-Al anode material, in which silicon is more contained was tested by same method as above, it was investigated to check the anode capacity and morphology properties in accordance with changing content of silicon, Si-Al anode has much higher initial discharge capacity(about 500mAh/g) than anode materials based on Aluminum as well as the morphology properties is also very different with the anode based Aluminum.

• The Korean Journal of Ceramics
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• v.5 no.3
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• pp.211-216
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• 1999

Four different $\beta-Si_3N_4$ ceramics with silicon oxynitrides $[Y_10(SiO_4)_6N_2, Yb_4Si_2N_2O_7, Er_2Si_3N_4O_3, \;and La_{10}(SiO_4)_6N_2$, respectivley] as secondary phases have been fabricated by hot-pressing the $Si_3N_4-Re_4Si_2N_2O_7$ (Re=Y, Yb, Er, and La) compositions at $1820^{\circ}C$ for 2h under a pressure of 25 MPa. The high temperature strength and oxidation behavior of the hot-pressed ceramics were characterized and compared with those of the ceramics fabricated from $Si_3N_4-Si_2O_7$ compositions. The $Si_3N_4-Re_4Si_2N_2O_7$composition investigated herein showed comparable high temperature strength to those from $Si_3N_4-Re_2Si_2O_7$ compositions. Si3N4 ceramics from a $Si_3N_4-Y_4Si_2N_2O_7$ composition showed the highest strength of 877 MPa at $1200^{\circ}C$ among the compositions. All $Si_3N_4$ ceramics investigated herein showed a parabolic weight gain with oxidation time at $1400^{\circ}C$ and the oxidation products of the ceramics were $SiO_2$ and $Re_2Si_2O_7$. The $Si_3N_4-Re_4Si_2N_2O_7$ compositions showed inferior oxidation resistance to those from $Si_3n_4-Re_2Si_2O_7$ compositions, owing to the incompatibility of the secondary crystalline phases of those ceramics with $SiO_2$, the oxidation product of Si3N4.Si3N4 ceramics from a $Si_3N_4-Er_4Si_2N_2O_7$ composition showed the best oxidation resistance of 0.375mg/$\textrm{cm}^2$ after oxidation at $1400^{\circ}C$ for 102 h in air among the compositions.

• Journal of Integrative Natural Science
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• v.8 no.1
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• pp.67-74
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• 2015

Sensing characteristics for porous smart particle based on DBR smart particles were reported. Optically encoded porous silicon smart particles were successfully fabricated from the free-standing porous silicon thin films using ultrasono-method. DBR PSi was prepared by an electrochemical etch of heavily doped $p^{++}$-type silicon wafer. DBR PSi was prepared by using a periodic pseudo-square wave current. The surface-modified DBR PSi was prepared by either thermal oxidation or thermal hydrosilylation. Free-standing DBR PSi films were generated by lift-off from the silicon wafer substrate using an electropolishing current. Free-standing DBR PSi films were ultrasonicated to create DBR-structured porous smart particles. Three different surface-modified DBR smart particles have been prepared and used for sensing volatile organic vapors. For different types of surface-modified DBR smart particles, the shift of reflectivity mainly depends on the vapor pressure of analyte even though the surfaces of DBR smart particles are different. However huge difference in the shift of reflectivity depending on the different types of surface-modified DBR smart particles was obtained when the vapor pressures are quite similar which demonstrate a possible sensing application to specify the volatile organic vapors.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.425-427
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• 1996

New fabrication technique was developed to make three dimensional silicon microstructure with five fold vertical steps through entire wafer thickness. Each step is pre-defined on multiply stacked thermal oxide and silicon nitride (O/N) layers by photolithographies. Multi-stepped silicon microstructure is formed by anisotropic etch in aqueous KOH solution with the patterned nitride film as masking layer. Fabricated microstructure consists of four $16{\mu}m$ thick flexural spring beams, $290{\mu}m$ thick proof mass, mesas for overrange stop with $10{\mu}m$ height from the surface of the proof mass, and the other mesas and V grooves used for assembling this structure to the packaging frame of pendulous servo accelerometer. Using the numerical finite element method (FEM) simulator: ABAQUS, mechanical characteristics of the fabricated microstructure by the developed technique was compared with those of the same structure processed by one step silicon bulk etch followed by oxidation and patterning the etched region.

• Journal of Welding and Joining
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• v.28 no.5
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• pp.80-85
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• 2010

This study focused on laser assisted machining (LAM) of silicon nitride ceramic that efficiently removes the material through machining of the softened zone by local heating. The effects of laser-assisted machining parameters were studied for cost reduction, and active application in processing of silicon nitride ceramics in this study. Laser assisted machining of silicon nitride allows effective cutting using CBN tool by local heating of the cutting part to the softening temperature of YSiAlON using by the laser beam. When silicon nitride is sufficiently preheated, the surface is oxidized and decomposed and then forms bloating, micro crack and silicate layer, thereby making the cutting process more advantageous. HIPSN and SSN specimens were used to study the machining characteristics. Higher laser power makes severer oxidation and decomposition of both materials. Therefore, HIPSN and SSN specimens were machined more effectively at higher power.