• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.25-26
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• 2009

Pulsed-PECVD를 이용하여 상온에서 실리콘 나이트라이드(SiN) 박막을 증착하였다. 본 연구에서는, 60-100%의 duty ratio 변화에 따른 굴절률을 살펴보고, 굴절률에 대한 이온에너지의 영향을 분석했다. RF 소스파워는 900W로 고정하였고 $SiH_4-N_2$를 이용하였다. 이온에너지에 대한 정보는 non-invasive 이온 분석기를 이용하여 수집하였다. 측정된 이온에너지 변수는 high ion energy, low ion energy, high ion energy flux, low ion energy flux이며, 이를 이용해 또 다른 변수인 ion energy flux ratio를 계산하였다. Duty ratio의 감소에 따라 굴절률은 일반적으로 감소하였다. 또한 duty ratio의 감소에 따라 high ion energy는 증가하였다. 한편, 60-80%에서 굴절률은 이온에너지 flux의 비에 강한 의존성을 보였으며, 60%를 제외한 모든 duty ratio 구간에서 굴절률은 Nl에 강하게 영향을 알고 있는 것으로 유추되었다. 굴절률은 1.508와 1.714 사이에서 변화하였다.

• 대한전자공학회논문지SD
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• 제39권1호
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• pp.25-30
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• 2002

본 논문에서는 PECVD 장비를 이용하여 PHEMT 소자의 passivation 막으로 사용되는 Si₃N₄박막의 특성을 최적화하고, 0.25 ㎛급 PHEMT 제작에 적용하였다. 제작된 PHEMT(60 ㎛×2 fingers)의 소자 특성을 측정한 결과, passivation 후 드레인 포화전류와 최대 전달 컨덕턴스는 passivation 전보다 각각 2.7% 와 3%씩 증가하였으며, 전류이득 차단 주파수는 53 ㎓, 최대 공진 주파수는 105 ㎓ 였다.

• Tribology and Lubricants
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• 제8권2호
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• pp.64-72
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• 1992

The recent trends of rotating machinery demand high speed and high temperature operation, and the bearing with new material is required to be developed. Ceramic, especially silicon nitride, have been receiving attention as alternative material to conventional bearing steel. Ceramic ball bearing offers major performance advantages over steel bearing, for instance, high speed, maginal lubrication, high temperature, improved corrosion resistance and nonmagnetic capabilities etc.. In this paper, the mechanical characteristics of ceramic ball bearing (hybrid ceramic bearing and all ceramic bearing) were investigated, and the characteristics of ceramic bearing were compared with that of steel bearing. Deep groove ball bearing 6208 was taken the object of analysis. The main results of analysis were followings: the radial stiffness of hybrid and all ceramic bearing were 112% and 130% that of steel bearing, and the axial stiffness of all ceramic bearing was 110% that of steel bearing. According as rotating speed was up, the ball load, the contact angle, the contact stress and the spin-to-roll ratio between ball and raceway of ceramic bearing were far smaller than these of steel bearing. And there was not a significant difference between the minimum film thickness of ceramic bearing and steel bearing. It is expected that this research is contributed to enhanced fundamental technology for the practical applications of ceramic ball bearing.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2001년도 제34회 추계학술대회 개최
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• pp.78-87
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• 2001

The friction and wear behaviors of WC/C multilayer coating were investigated by using a pin on disk type tester. The experiment was conducted by using silicon nitride (S $i_{3}$ $N_{4}$) as a pin material and WC/C multilayer coating on bearing steel (STB2) as a disk material, under various environments that are atmospheric conditions of high vacuum( 1,3$\times$10$^{-4}$ Pa), medium vacuum( 1.3$\times$10$^{-l}$Pa). ambient air( 10$^{5}$ pa)(3 types) and relative humidity(2~98%) conditions. The results showed that WC/C coating fracture was suddenly increased with increasing degree of vacuum, because of high adhesion. So, WC/C coating could not be displayed their ability as solid lubricant. WC/C coating could be displayed better abilitv as solid lubricant with increasing relative humidity. because of oxide film, size and shape of wear debris. The friction coefficient and specific wear rate became better about RH 50%.%.

• 한국진공학회지
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• 제3권3호
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• pp.360-367
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• 1994

Si2H6PH3 혼합기체를 사용하여 증착된 in-situ P-doped 비정질 실리콘과 SiH4 기체를사용하여 증착한후에 As+ 이온주입에 의해 도핑시킨 다결정 실리콘 박막을 하부 전극으로 하는 캐패시터를 형성 하였다. 여기서 유전박막층은 자연산화막 화학증착된 실리콘질화막 및 질화막의 산화에 의해 형성된 O-N-O 구조를 갖는 것이었다. 두 종류의 하부전극에 따른 캐패시터의 전기적 특서을 조사하였다. 전기 적 특성으로는 정전용량, 누설전류, 절연파괴전압 및 TDDB 등이었다. 이 가운데 정전용량, 누설전류 및 절연파괴전압은 하부전극에 따라 큰 차이를 보이지않았다. 그러나 음의 전장하에서의 TDDB 특성은 in-situ P-doped 비정실 실리콘이 하부전극인 캐패시터가 As+ 이온 주입실리콘이 하부전극인 것에 비해 더우수하였다. 이와 같은 TDDB 특성의 차이는 하부전극 실리콘의 integrity 차이로 인한 자연산화막의 결함 정도의 차이에 기인하는 것 같다. 이를 뒷받침하는 것으로 투과전자현미경 단면사진으로 확인하였 다. Shallow junction을 유지하는데도 in-situ P-doped 비정실 실리콘은 만족할 만한 결과를 보이며 박 막자체의 면저항값도 낮출 수 있어 초고집적 회로의 캐패시터 전극으로서 이용될 수 있는 것으로 평가 되었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.272-275
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• 2005

The high stability of a-Si:H TFTs device is studied with different deposited conditions of $SiN_x$ films by PECVD. The process parameters of $N_2$, $NH_3$ gas flow rate, RF power, and pressure s of hydrogenated amorphous silicon nitride are taken into account and analyzed by Taguchi experimental design method. The $NH_3$ gas flow rate and RF power are two major factors on the average threshold voltage and the a-SiNx:H film's structure. The hydrogen contents in $SiN_x$ films were measured by FTIR using the related Si-H/N-H bonds ratio in $a-SiN_x:H$ films. After the 330,000 sec gate bias stress is applied, the threshold voltages ($V_th$) shift less than 10%. This result indicates that the highly stable a-Si:H TFTs device can be fabricated with optimum gate $SiN_x$ insulator.

• 한국전자파학회논문지
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• 제13권10호
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• pp.1048-1053
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• 2002

본 논문에서는 2 GHz 대역의 격자형 및 평형 구조를 가지는 박막공진 여파기를 설계, 제작하고 분석하였다. 단위공진자의 앞전물질은 AIN를 사용하였고, 전극도체로는 백금을 사용하였으며, 하부도체와 기판사이에 공기층이 있는 구조로 제작되었다. 제작된 여파기들은 크기가 작고 낮은 삽입손실과 격자형의 경우 약 15 dB, 평형 구조의 경우 약 30 dB 정도의 선택도를 가진다. 격자형 및 평형 구조는 사다리형 구조와 같이 실리콘 기판위에 제작되었으며, 사다리형 구조에 비해 넓은 대역폭을 가지며 평형구조의 경우 이외의 튜닝과정 없이 RF 여파기로 사용될 수 있다.

• 한국세라믹학회지
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• 제32권7호
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• pp.809-816
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• 1995

Ti1-xAlxN films were successfully deposited on high speed steel and silicon wafer by plasma-assisted chemical vapor deposition using a TiCl4/AlCl3/N2/Ar/H2 gas mixture. Plasma process enabled N2 gas to nitride AlCl3, which is not possible in sense of thermodynamics. XPS analyses revealed that the deposited layer contained Al-N bond as well as Ti-N bond. Ti1-xAlxN films were polycrystalline and had single phase, B1-NaCl structure of TiN. Interplanar distance, d200, of (200) crystal plane of Ti1-xAlxN was, however, decreased with Al content, x. Al incorporation into TiN caused the grain size to be finer and changed strong (200) preferred orientation of TiN to random oriented microstructure. Those microstructural changes with Al addition resulted in the increase of micro-hardness of Ti1-xAlxN film up to 2800Kg/$\textrm{mm}^2$ compared with 1400Kg/$\textrm{mm}^2$ of TiN.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.37-38
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• 2007

This paper reports the characteristics of piezoelectric microspeakers that are audible in open air with high quality piezoelectric AlN thin film according to the materials properties. When we use a tensile-stressed silicon nitride diaphragm as a supporting layer, the Sound Pressure Level (SPL) is relatively small. However, the SPL of the fabricated microspeakers that have compressive-stressed composite diaphragm show higher output pressure than those of tensile-stressed diaphragm. It produces more than 60dB from 100Hz to 15kHz and the highest SPL is about 100dB at 9.3kHz with 20 Vpeak-to-peak sinusoidal input biases and at 10 mm distances from the fabricated microspeakers to the reference microphone.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.188.1-188.1
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• 2014

Aluminum is widely used as a material for electrode on silicon based devices. Especially, aluminum films are used as backside and front-side electrodes in silicon quantum dot (QD) solar cells. In this point, the diffusion of aluminum is very important for the enhancement of power conversion efficiency by improvement of contact property. Aluminum was deposited on a Si (100) wafer and a Si QD layer by ion beam sputter system with a DC ion gun. The Si QD layer was fabricated by $1100^{\circ}C$ annealing of the $SiO_2/SiO_1$ multilayer film grown by ion beam sputtering deposition. Cs ion beam with a low energy and a grazing incidence angle was used in SIMS depth profiling analysis to obtain high depth resolution. Diffusion behavior of aluminum in the Al/Si and Al/Si QD interfaces was investigated by secondary ion mass spectrometry (SIMS) as a function of heat treatment temperature. It was found that aluminum is diffused into Si substrate at $450^{\circ}C$. In this presentation, the effect of heat treatment temperature and Si nitride diffusion barrier on the diffusion of Al will be discussed.