• Journal of the Institute of Electronics Engineers of Korea SC
• /
• v.39 no.6
• /
• pp.34-42
• /
• 2002

In this paper, we propose a temperature independent the detective voltage source in voltage detector. The value of a detective voltage source is designed to become m times of silicon bandgap voltage at zero absolute temperature. By properly choosing the temperature coefficient of diode, the temperature coefficient of a concave voltage nonlinearities generated by the ${\Delta}V_{BE}$ section of diode between base and emitter of transistors with a different area can be summed with convex nonlinearities the $V_{BE}$ voltage to achieve the near zero temperature coefficient of the detective voltage source. We designed that the value of a detective voltage can be varied by ${\Delta}V_{BE}$, the $V_{BE}$multiplier circuit and resistor. In order to verify the performance of a proposed detective voltage source, we manufactured the voltage detector IC for 1.9V which is fabricated in $6{\mu}m$ Bipolar technology and measured the operating characteristics, the temperature coefficient of a detective voltage. To reduce the deviation of a detective voltage in the IC process step, we introduced a trimming technology, ion implantation and an isotropic etching. In manufactured IC, the detective voltage source could achieve the stable temperature coefficient of 29ppm/$^{\circ}C$ over the temperature range of -30$^{\circ}C$ to 70$^{\circ}C$. The current consumption of a voltage detector constituted by the proposed detective voltage source is $10{\mu}A$ from 1.9V-supply voltage at room temperature.

• Korean Journal of Materials Research
• /
• v.19 no.1
• /
• pp.28-32
• /
• 2009

Silicon carbide (SiC) is a promising material for power device applications due to its wide band gap (3.26 eV for 4H-SiC), high critical electric field and excellent thermal conductivity. The Schottky barrier diode is the representative high-power device that is currently available commercially. A field plate edge-terminated 4H-SiC was fabricated using a lift-off process for opening the Schottky contacts. In this case, Ni/Ti dual-metal contacts were unintentionally formed at the edge of the Schottky contacts and resulted in the degradation of the electrical properties of the diodes. The breakdown voltage and Schottky barrier height (SBH, ${\Phi}_B$) was 107 V and 0.67 eV, respectively. To form homogeneous single-metal Ni/4H-SiC Schottky contacts, a deposition and etching method was employed, and the electrical properties of the diodes were improved. The modified SBDs showed enhanced electrical properties, as witnessed by a breakdown voltage of 635 V, a Schottky barrier height of ${\Phi}_B$=1.48 eV, an ideality factor of n=1.04 (close to one), a forward voltage drop of $V_F$=1.6 V, a specific on resistance of $R_{on}=2.1m{\Omega}-cm^2$ and a power loss of $P_L=79.6Wcm^{-2}$.

• Journal of the Korean Vacuum Society
• /
• v.16 no.3
• /
• pp.197-204
• /
• 2007

Ultra thin Er-silicide layers formed by Er deposition on the clean p-silicon and in situ post annealing technique were investigated with respect to change of the Schottky barrier height. The formation of Er silicides was confirmed by XPS results. UPS measurements revealed that the workfunction of the silicide decreased and was saturated as the deposited Er thickness increased up to $10{\AA}$. We found that the silicides were mainly composed of Er5Si3 phase through the XRD experiments. After Schottky diodes were fabricated with the Er silicide/p-Si junctions, the Schottky barrier heights were calculated $0.44{\sim}0.78eV$ from the I-V measurements of the Schottky diodes. There was large discrepancy in the Schottky barrier heights deduced from the UPS with the ideal junction condition and the real I-V measurements, so that we attributed the discrepancy to the $Er_5Si_3$ phase in the Er-silicides and the large interfacial density of trap state of it.

• Radiation Oncology Journal
• /
• v.7 no.1
• /
• pp.93-100
• /
• 1989

Several combinations of measuring devices and phantoms were studied to measure electron beams. Silicon Pmt junction diode was used to find the dependence of depth dose profile on field size on axis of electron beam Depths of 50, 80 and $90\%$ doses increased with the field size for small fields. For some larger fields, they were nearly constant. The smallest of field sizes over which the parameters were constant was enlarged with increase of the energy of electron beams. Depth dose distributions on axis of electron beam of $10\times10cm^2$ field were studied with several combinations of measuring devices and phantoms. Cylindrical ion chamber could not be used for measurement of surface dose, and was not convenient for measurement of near surface region of 6MeV electron. With some exceptions, parameters agreed well with those studied by different devices and phantoms. Surface dose in some energies showed $4\%$ difference between maximum and minimum. For 18MeV, depths of 80 and $90\%$ doses were considerably shallower by film than by others. Parallel-plate ion chamber with polystyrene phamtom and silicon PN junction would be recommended for measurement of central axis depth dose of electron beams with considerably large field size. It is desirable not to use cylindrical ion chamber for the purpose of measurement of surface dose or near surface region for lower energy electron beam. It is questionable that film would be recommended for measurement of dose distribution of electron with high energy like as 18MeV.

• Journal of Sensor Science and Technology
• /
• v.7 no.3
• /
• pp.171-178
• /
• 1998

Silicon piezoresistive absolute pressure sensor for gas leakage alarm system was developed. This sensor must operate normally in the range of $0{\sim}600\;mmH_{2}O$ pressure, and $0{\sim}100^{\circ}C$ temperature. To make the most of this sensor for gas leakage alarm system, gas must not leak from the sensor itself when the diaphragm of the sensor fractures. Thus, the sealed diaphragm cavity was anodically bonded to pyrex 7740 glass under the condition of $10^{-4}$ torr, at $400^{\circ}C$. The sensitivity of developed sensor was $4.06{\mu}V/VmmH_{2}O$ for $600\;mmH_{2}O$ full-scale pressure range. And temperature compensation method of this sensor is to change bridge-in put-voltage linearly in proportion to the temperature variation by using diode(PXIN4001) or Al thin film resistor. By these methods the temperature effect in the range of $0{\sim}100^{\circ}C$ was compensated over 80 % for offset drift, 95 % for sensitivity.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.46 no.1
• /
• pp.1-6
• /
• 2009

The holding voltage of high-voltage devices under the snapback breakdown condition has been known to be much smaller than the operating voltage. Such characteristics cause high-voltage ICs to be susceptible to the transient latch-up failure in the practical system applications, especially when these devices are used as the ESD(ElectroStatic Discharge) power clamp circuit. A new latchup-free design of the ESD power clamp circuit with stacked-bipolar devices is proposed and successfully verified in a $0.35{\mu}m$ 3.3V/60V BCD(Bipolar-CMOS-DMOS) process to achieve the desired ESD level. The total holding voltage of the stacked-bipolar devices in the snapback breakdown condition can be larger than the operating voltage. Proposed power clamp operates safely because of the high holding voltage. From the measurement on the devices fabricated using a $0.35{\mu}m$ BCD Process, it was observed that the proposed ESD power clamp can provide 800% higher ESD robustness per silicon area as compared to the conventional clamps with a high-voltage diode.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.24 no.6
• /
• pp.411-418
• /
• 2019

Light-triggered thyristors (LTTs) are essential components in high-power applications, such as HVDC transmission and several pulsed-power applications. Generally, LTT fabrication includes a deep diffusion of aluminum as a p-type dopant to form a uniform p-base region, which needs careful concern for contamination and additional facilities in silicon semiconductor manufacturing factories. We fabricated 4-inch 5,000 V LTTs with boron implantation and diffusion process as a p-type dopant. The LTT contains a main cathode region, edge termination designed with a variation of lateral doping, breakover diode, integrated resistor, photosensitive area, and dV/dt protection region. The doping concentration of each region was adjusted with different doses of boron ion implantation. The fabricated LTTs showed good light triggering characteristics for a light pulse of 905 nm and a blocking voltage (V_DRM) of 6,500 V. They drove an average on-state current (I_TAVM) of 2,270 A, peak nonrepetitive surge current (I_TSM) of 61 kA, critical rate of rise of on-state current (di/dt) of 1,010 A/㎲, and limiting load integral (I²T) of 17 MA²s without damage to the device.

• The korean journal of orthodontics
• /
• v.43 no.3
• /
• pp.127-133
• /
• 2013

Objective: We aimed to investigate the effects of silanation time on the shear bond strength (SBS) of metal brackets on gold alloy in a silicoating procedure and compare the SBS of metal brackets on gold alloy and enamel. Methods: Type III gold alloy plates were sandblasted with 30-${\mu}m$ silicon dioxide. Excess particles were removed with gentle air after silica coating, and silane was applied. Maxillary central-incisor metal brackets were bonded to each conditioned alloy surface with a light curing resin adhesive for 1 s, 30 s, 60 s, or 120 s after applying silane. The brackets were also bonded to 36 upper central incisors with the same adhesive. All samples were cured for 40 s with a light emitting diode curing light. The SBS was tested after 1 h and after 24 h. The adhesive remnant index (ARI) of the samples was also compared. Results: The 60-s and 120-s silanation time groups showed a higher SBS than the other groups (p < 0.05). Samples tested after 24 h showed a significantly higher SBS than did the samples tested after 1 h (p < 0.05). The 1-s group showed higher ARI scores. The one-way analysis of variance and Student-Newman-Keuls test showed that the SBS values of the 60-s and 120-s silanation time groups were not significantly different from the SBS values of enamel. Conclusions: Adequate silanation time is required to produce sufficient bond strength during silicoating.

• Proceedings of the Korean Society of Near Infrared Spectroscopy Conference
• /
• 2001.06a
• /
• pp.1154-1154
• /
• 2001

Near infra-red (NIR) spectroscopy has been used for the non-invasive assessment of intact fruit for eating quality attributes such as total soluble solids (TSS) content. However, little information is available in the literature with respect to the robustness of such calibration models validated against independent populations (however, see Peiris et al. 1998 and Guthrie et al. 1998). Many studies report ‘prediction’ statistics in which the calibration and prediction sets are subsets of the same population (e. g. a three year calibration validated against a set from the same population, Peiris et al. 1998; calibration and validation subsets of the same initial population, Guthrie and Walsh 1997 and McGlone and Kawano 1998). In this study, a calibration was developed across 84 melon fruit (R$^2$= 0.86$^{\circ}$Brix, SECV = 0.38$^{\circ}$Brix), which predicted well on fruit excluded from the calibration set but taken from the same population (n = 24, SEP = 0.38$^{\circ}$Brix with 0.1$^{\circ}$Brix bias), relative to an independent group (same variety and farm but different harvest date) (n = 24, SEP= 0.66$^{\circ}$ Brix with 0.1$^{\circ}$Brix bias). Prediction on a different variety, different growing district and time was worse (n = 24, SEP = 1.2$^{\circ}$Brix with 0.9$^{\circ}$Brix bias). Using an ‘in-line’ unit based on a silicon diode array spectrometer, as described in Walsh et al. (2000), we collected spectra from fruit populations covering different varieties, growing districts and time. The calibration procedure was optimized in terms of spectral window, derivative function and scatter correction. Performance of a calibration across new populations of fruit (different varieties, growing districts and harvest date) is reported. Various calibration sample selection techniques (primarily based on Mahalanobis distances), were trialled to structure the calibration population to improve robustness of prediction on independent sets. Optimization of calibration population structure (using the ISI protocols of neighbourhood and global distances) resulted in the elimination of over 50% of the initial data set. The use of the ISI Local Calibration routine was also investigated.

• Radiation Oncology Journal
• /
• v.2 no.2
• /
• pp.271-280
• /
• 1984

The peripheral dose, defined as the dose outside therapeutic photon fields, which is responsible for the functional damage of the critical organs, fetus, and radiation. induced carcinogenesis, has been investigated for $^{60}Co\;\gamma$ ray and 10 MV Xray. It was measured by silicon diode controlled by semiautomated water phantom without any shielding or with lead plate of HVL thickness put horizontally or vertically to shield stray radiations. Authors could obtain following results. 1. The peripheral dose was larger than $0.7\%$ of central axis maximum dose even at 20cm distance from field margin. That is clinically significant, so it should be reduced. 2. Even for square fields of 10 MV Xray, radial peripheral dose distribution did not coincide with transverse distribution, because of the position of collimator jaws. 3. Between surface and $d_m$, the peripheral dose distributions show a pattern of the dose distribution of electron beams and the maximum doss was approximately proportional to the length of a side of square field. 4. The peripheral doses depended on radiation quality, field size, distance from field margin and depth in water. Distance from field margin was the most important factor. 5. Except for near surface, the peripheral dose from phantom was approximately equal to that from therapy unit. 6. To reduce the surface dose outside fields, therapist should shield stray radiations from therapy unit by lead plate of at least one HVL for 10 MV X-ray and by bolus equivalent to tissue of 0.5cm thickness for $^{60}Co$. 7. To reduce the dose at depth deeper than $d_m$, it is desirable to shield stray radiations from therapy unit by lead.