• Journal of Power Electronics
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• v.2 no.3
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• pp.171-180
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• 2002

New 42-volt automotive electrical systems can provide significant improvements in vehicle performance and fuel economy. It is crucial to provide protection against load dump and other overvoltage transients in 42-volt systems. While advanced active control techniques are generally considered capable of providing such protection, the use of passive transient voltage suppression (TVS) devices as a secondary or supplementary protection means can significantly improve design flexibility and reduce system costs. This paper examines the needs and options for passive TVS devices for 42-volt applications. The limitations of the commonly available automotive TVS devices, such as Zener diodes and metal oxide varistors (MOV), are analyzed and reviewed. A new TVS device concept, based on power MOSFET and thin-film polycrystalline silicon back-to-back diode technology, is proposed to provide a better control on the clamp voltage and meet the new 42-volt specification. Both experimental and modeling results are presented. Issues related to the temperature dependence and energy absorbing capability of the new TVS device are discussed in detail. It is concluded that the proposed TVS device provides a cost-effective solution for load dump protection in 42-volt systems.

• Journal of the Semiconductor & Display Technology
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• v.6 no.3
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• pp.47-53
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• 2007

Ultra thin Si p-n junctions shallower than $300{\AA}$ were fabricated and biased to the avalanche regime. The ultra thin junctions were fabricated to be parallel to the surface and exposed to the surface without $SiO_2$ layer. Those junctions emitted white light and electrons when junctions were biased in the avalanche breakdown regime. Therefore, we could observe the avalanche breakdown region visually. We could also observe the influence of electric field to the current flow visually by observing the white light which correspond to the avalanche breakdown region. Arrayed diodes emit light and electrons uniformly at the diode area. But, the reverse leakage current were larger than those of ordinary diodes, and the breakdown voltage were less than 10V.

• Journal of the Optical Society of Korea
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• v.13 no.3
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• pp.341-348
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• 2009

We report the development of full-field swept-source optical coherence tomography (SS-OCT) in the wavelength range of 815-870 nm using a unique combination of super-luminescent diode (SLD) as broad-band light source and acousto-optic tunable filter (AOTF) as a frequency-scanning device. Some new applications of full-field SS-OCT in forensic sciences and engineering materials have been demonstrated. Results of simultaneous topography and tomography of latent fingerprints, silicon microelectronic circuits and composite materials are presented. The main advantages of the present system are completely non-mechanical scanning, wide-field, compact and low-cost.

• Proceedings of the Korean Nuclear Society Conference
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• 1996.05d
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• pp.133-138
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• 1996

For the application of hydrogenated amorphous silicon (a-Si:H) p-i-n structural diode as the alpha particle spectroscopy, the induced charge collection was simulated based on a relevant non-uniform charge generation model. The simulation was accomplished for two extreme cases of the incident direction of alpha particle, p-and n-side, respectively. As expected, for the complete charge collection, the hole collection should be severely considered due to its poor mobility and the full depletion bias required. For the comparison of signal corresponding to the detector configuration or structure, although n-i-p configuration shows a wider range of linearity to the energy, p-i-n configuration is more suitable in the viewpoint of linearity and signal value for the considering energy range.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.452-455
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• 2007

This paper provides an overview on the characteristics of a-SiC:H barrier film deposited for flexible display applications. Key characteristics such as high crack resistance, high thermal/hydro stability, excellent adhesion to the polymer substrate, as well as very low permeance has been demonstrated. The excellence of this barrier film has been shown from competitive analysis compared with other barrier coating materials. Finally, flexible Polymer Light Emitting Diode (PLED) test pixels have been fabricated on the barrier coated plastic substrate, demonstrating the viability of the device with lifetime data.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.280-284
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• 2011

Silicon carbide (SiC)-based gas sensors can be operated at very high temperatures. So far, catalytic metal-schottky diodes respond fast to a change between a reducing and an oxidizing atmosphere. Therefore SiC diodes have been suggested for high temperature gas sensor applications. In this work, the effect of reactivity of the catalytic surface on the 4H-SiC sensor-structures in 375 K~775 K have been studied and some fundamental simulations have also been performed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.844-847
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• 2008

The photo leakage currents of a conventional hydrogenated amorphous silicon(a-Si:H) thin film transistor(TFT) were investigated and analyzed in case of illumination from various light sources such as halogen lamp, cold cathode fluorescent lamp(CCFL) backlight, and white light emitting diode(LED) backlight. The photo leakage characteristics showed the apparent differences in the leakage level and in the $I_{on}/I_{off}$ ratio in spite of the similar luminances of light sources. This leakage level is expected to be related to the wavelength of the lowest intensity peak from the spectral characteristics of light sources.

• Journal of Power Electronics
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• v.11 no.3
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• pp.381-388
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• 2011

This article presents the development of a model for SiC power diodes based on the physics of the semiconductor. The model is able to simulate the behavior of the dynamics of the charges in the N- region based on the stored charge inside the SiC power diode, depending on the working regime of the device (turn-on, on-state, and turn-off). The optimal individual calculation of the ambipolar diffusion length for every phase of commutation allows for solving the ambipolar diffusion equation (ADE) using a very simple approach. By means of this methodology development a set of differential equations that models the main physical phenomena associated with the semiconductor power device are obtained. The model is developed in Pspice with acceptable simulation times and without convergence problems during its implementation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.7
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• pp.509-512
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• 2010

The thermal distribution of 2D and 3D p-n photovoltaic diode structures with and without surface texturing has been studied. By analysis of the numerical simulation results of the I-V characteristics and lattice temperature distributions the effect of different texturing structures on the characteristics of silicon p-n photovoltaic devices has been studied systematically. The efficiency of the device having surface texturing shows more than ~2% enhancement compared to the reference devices which did not have texturing. In addition, the effect of the density of the texturing groove has been studied and it has been confirmed that the texturing structure not only improves the light trapping but also plays an important role in the heat radiation.

• Proceedings of the KIPE Conference
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• 2018.11a
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• pp.157-158
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• 2018

본 논문은 3상 AC 모터와 영구동기자석 모터제어를 위한 새로운 1200V, 5A/10A 지능형 전력반도체 모듈(Intelligent Power Module, IPM) 제품을 소개한다. 이 전력 모듈은 DIP(Dual in line)패키지의 DBC(Direct Bond Copper)로 구성되어 있으며 Silicon on Insulator, SOI type의 6 채널 게이트 드라이브와 6개의 IGBT, Diode로 구성되어 있다. 본 논문에서는 1200V, 5A/10A 의 새로운 전력반도체의 전기적 특성 및 드라이빙 퍼포먼스를 소개한다.