• 제목/요약/키워드: silicon diode

검색결과 232건 처리시간 0.026초

Characteristics of Si3N4 Laser Assisted Machining according to the Laser Power and Feed Rate

  • Kim, Jong-Do;Lee, Su-Jin;Suh, Jeong
    • Journal of Advanced Marine Engineering and Technology
    • /
    • 제34권7호
    • /
    • pp.963-970
    • /
    • 2010
  • This study makes an estimate of the laser-assisted machining (LAM) of an economically viable process for manufacturing precision silicon nitride ceramic parts using a high-power diode laser (HPDL). The surface is locally heated by an intense laser source prior to material removal, and the resulting softening and damage of the workpiece surface simplify the machining of the ceramics. The most important advantage of LAM is its ability to produce much better workpiece surface quality compared to conventional machining. Also important are its larger material removal rates and longer tool life. The cutting force and surface temperature were measured on-line using a pyrometer and a dynamometer, respectively. Tool wear, chips and the surface of the workpiece were measured using optical microscopy, and the surface and fractured cross-section of $Si_3N_4$ were measured by SEM. During the LAM process, the cutting force and tool wear were reduced and oxidation of the machined surface was increased according to the increase in the laser power. Moreover, the more the feed rate increased, the more the cutting force and tool wear increased.

CHARACTERISTICS OF FABRICATED SiC RADIATION DETECTORS FOR FAST NEUTRON DETECTION

  • Lee, Cheol-Ho;Kim, Han-Soo;Ha, Jang-Ho;Park, Se-Hwan;Park, Hyeon-Seo;Kim, Gi-Dong;Park, June-Sic;Kim, Yong-Kyun
    • Journal of Radiation Protection and Research
    • /
    • 제37권2호
    • /
    • pp.70-74
    • /
    • 2012
  • Silicon carbide (SiC) is a promising material for neutron detection at harsh environments because of its capability to withstand strong radiation fields and high temperatures. Two PIN-type SiC semiconductor neutron detectors, which can be used for nuclear power plant (NPP) applications, such as in-core reactor neutron flux monitoring and measurement, were designed and fabricated. As a preliminary test, MCNPX simulations were performed to estimate reaction probabilities with respect to neutron energies. In the experiment, I-V curves were measured to confirm the diode characteristic of the detectors, and pulse height spectra were measured for neutron responses by using a $^{252}Cf$ neutron source at KRISS (Korea Research Institute of Standards and Science), and a Tandem accelerator at KIGAM (Korea Institute of Geoscience and Mineral Resources). The neutron counts of the detector were linearly increased as the incident neutron flux got larger.

Thermal Analysis and Optimization of 6.4 W Si-Based Multichip LED Packaged Module

  • Chuluunbaatar, Zorigt;Kim, Nam Young
    • 한국통신학회논문지
    • /
    • 제39C권3호
    • /
    • pp.234-238
    • /
    • 2014
  • Multichip packaging was achieved the best solution to significantly reduce thermal resistance at the same time, to increase luminance intensity in LEDs packaging application. For the packaging, thermal spreading resistance is an important parameter to get influence the total thermal performance of LEDs. In this study, silicon-based multichip light emitting diodes (LEDs) packaged module has been examined for thermal characteristics in several parameters. Compared to the general conventional single LED packaged chip module, multichip LED packaged module has many advantages of low cost, low density, small size, and low thermal resistance. This analyzed module is comprised of multichip LED array, which consists of 32 LED packaged chips with supplement power of 0.2 W at every single chip. To realize the extent of thermal distribution, the computer-aided design model of 6.4 W Si-based multichip LED module was designed and was performed by the simulation basis of actual fabrication flow. The impact of thermal distribution is analyzed in alternative ways both optimizing numbers of fins and the thickness of that heatsink. In addition, a thermal resistance model was designed and derived from analytical theory. The optimum simulation results satisfies the expectations of the design goal and the measurement of IR camera results. tart after striking space key 2 times.

Laser Thermal Processing System for Creation of Low Temperature Polycrystalline Silicon using High Power DPSS Laser and Excimer Laser

  • Kim, Doh-Hoon;Kim, Dae-Jin
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
    • /
    • pp.647-650
    • /
    • 2006
  • Low temperature polycrystalline silicon (LTPS) technology using a high power laser have been widely applied to thin film transistors (TFTs) for liquid crystal, organic light emitting diode (OLED) display, driver circuit for system on glass (SOG) and static random access memory (SRAM). Recently, the semiconductor industry is continuing its quest to create even more powerful CPU and memory chips. This requires increasing of individual device speed through the continual reduction of the minimum size of device features and increasing of device density on the chip. Moreover, the flat panel display industry also need to be brighter, with richer more vivid color, wider viewing angle, have faster video capability and be more durable at lower cost. Kornic Systems Co., Ltd. developed the $KORONA^{TM}$ LTP/GLTP series - an innovative production tool for fabricating flat panel displays and semiconductor devices - to meet these growing market demands and advance the volume production capabilities of flat panel displays and semiconductor industry. The $KORONA^{TM}\;LTP/GLTP$ series using DPSS laser and XeCl excimer laser is designed for the new generation of the wafer & FPD glass annealing processing equipment combining advanced low temperature poly-silicon (LTPS) crystallization technology and object-oriented software architecture with a semistandard graphical user interface (GUI). These leading edge systems show the superior annealing ability to the conventional other method. The $KORONA^{TM}\;LTP/GLTP$ series provides technical and economical benefits of advanced annealing solution to semiconductor and FPD production performance with an exceptional level of productivity. High throughput, low cost of ownership and optimized system efficiency brings the highest yield and lowest cost per wafer/glass on the annealing market.

  • PDF

유중 용존수소 감지를 위한 Pd/Pt Gate MISFET 센서의 제조와 그 특성 (Fabrication and Characteristics of Pd/Pt Gate MISFET Sensor for Dissolved Hydrogen in Oil)

  • 백태성;이재곤;최시영
    • 센서학회지
    • /
    • 제5권4호
    • /
    • pp.41-46
    • /
    • 1996
  • 변압기 절연유중 용존수소를 감지하기 위해 Pd/Pt 게이트 MISFET 센서를 제조하고 그 특성을 조사하였다. 동일 칩안에 내장형 히터와 온도측정용 다이오드를 제조하고 MISFET의 전압 드리프트를 줄이기 위해 차동형구조로 하였다. 수소유입 드리프트를 줄이기 위해, 양쪽 FET의 게이트 절연층을 실리콘 산화막과 실리콘 질화막의 2중 구조로 하였다. 수소감지막의 블리스터를 줄이기 위해 Pd/Pt 2중 금속층을 증착하였다. 제조된 센서의 변압기 절연유에 대한 수소감지 특성은 40mV/10ppm 감도와 0.14mV/day 안정도를 보였다.

  • PDF

감마선 선량계를 개발하기 위한 상용 PIN 포토 다이오드의 응용 (Application of Commercial PIN Photodiodes to develope Gamma-Ray Dosimeters)

  • 정동화;김성덕
    • 센서학회지
    • /
    • 제9권4호
    • /
    • pp.274-280
    • /
    • 2000
  • 본 논문은 감마선 방사선 선량을 측정하기 위하여 상용 반도체를 응용하기 위한 실험적 연구에 대하여 다루었다. 실리콘 포토 다이오드는 값이 싸고 작으며 높은 효율과 견고하여 광검출기로 잘 이용되기 때문에 감마선과 같은 방사선 측정에 효과적으로 이용될 수 있다. 대부분의 PN 포토 다이오드는 이 증가함에 따라 역 방향 전류의 증가하는 특성을 가지고 있다. 그러므로 이 소자들의 공핍층이 역 방향 전류에 영향을 주므로 이 공핍층의 면적이 큰 PIN 포토 다이오드를 선택하였다. 이 연구에서는 방사선량을 검출하고 감마선 선량계를 개발하는데 적용하기 위하여, PIN 다이오드에 대해 몇 가지 실험이 수행되었다. NEC사의 PH 302와 SIEMENS사의 BPW 34와 같은 2가지 종류의 포토 다이오드를 반도체 분석장치를 사용하여 $\gamma$선 방사선원인 Co-60의 저준위 시설에서 시험하였다. 그 결과, 방사선 선량률과 다이오드의 전류 사이에 양호한 선형적 함수 관계가 나타나는 것을 확인할 수 있었다. 따라서, 이들 실리콘 PIN 포토 다이오드들은 $\gamma$선 선량계를 설계하는데 적합하게 이용될 수 있을 것이다.

  • PDF

레이저 검출용 고감도 실리콘 포토다이오드 제조 및 특성 분석에 관한 연구 (A Study on the Characteristics Analysis and Design of High Sensitivity Silicon Photodiode for Laser Detector)

  • 이준명;강은영;박건준;김용갑
    • 한국전자통신학회논문지
    • /
    • 제9권5호
    • /
    • pp.555-560
    • /
    • 2014
  • 본 논문에서 850nm~1000nm 파장대역에서 레이저를 검출하기 위한 고감도 실리콘 포토다이오드를 제조하고 전기적 및 광학적 특성을 분석하였다. 소자의 크기는 $5000{\mu}m{\times}2000{\mu}m$이며 두께는 $280{\mu}m$로 제조하여 TO-5 형태로 패키징 하였다. 전기적 특성으로 암전류는 5V 역 전압 일 때 0.1nA의 값을 나타내었으며 정전용량은 0V일 때 1kHz 주파수 대역에서 32.5pF와 200kHz 주파수 대역에서 32.4pF로 적은 정전용량의 값을 나타내었다. 또한 출력신호의 상승시간은 10V의 전압일 때 20.92ns로 고속 응답특성을 확인하였다. 광학적 특성으로는 890nm에서 최대 0.57A/W의 분광감응도를 나타내었고 1000nm에서는 0.37A/W로 감소한 분광감응도를 나타내고 있지만 870nm~920nm 파장대역에서는 비교적 우수한 분광감응도를 나타내었다.

Development of a Test Strip Reader for a Lateral Flow Membrane-based Immunochromatographic Assay

  • Park, Je-Kyun;Kim, Suhyeon
    • Biotechnology and Bioprocess Engineering:BBE
    • /
    • 제9권2호
    • /
    • pp.127-131
    • /
    • 2004
  • A low-cost, simple strip reader system using a linear movement mechanism of CD-ROM deck has been developed to characterize a lateral flow membrane-based immunochromatographic assay. The test strip reader was assembled by a CD-ROM deck and home-made optical head especially designed for immunoassays. The optical head for detecting reflected light from the test strip surface consists of green light-emitting diode, large area silicon photodiode, and anodized aluminum mounting block providing a slit structure for cutting light from the LED. The stepping motor of the deck was operated in the full step mode, whose distance of each reading point is about 0.15mm. The performance of the strip reader was tested by analysis of HBV(hepatitis B virus) antigen test kit. This strip reader can be useful for inexpensive, disposable, and membrane-based assays that provide visual evidence of the presence of an analyte in a liquid sample.

A New AMOLED Pixel Circuit Employing a-Si:H TFTs for High Aperture Ratio

  • Shin, Hee-Sun;Lee, Jae-Hoon;Jung, Sang-Hoon;Kim, Chang-Yeon;Han, Min-Koo
    • Journal of Information Display
    • /
    • 제6권2호
    • /
    • pp.12-15
    • /
    • 2005
  • We propose a new pixel design for active matrix organic light emitting diode (AM-OLED) displays using hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs). The pixel circuit is composed of five TFTs and one capacitor, and employs only one additional control signal line. It is verified by SPICE simulation results that the proposed pixel compensates the threshold voltage shift of the a-Si:H TFTs and OLED.

Calibration transfer between miniature NIR spectrometers used in the assessment of intact peach and melon soluble solids content

  • Greensill, Colin.V.;Walsh, Kerry.B.
    • 한국근적외분광분석학회:학술대회논문집
    • /
    • 한국근적외분광분석학회 2001년도 NIR-2001
    • /
    • pp.1127-1127
    • /
    • 2001
  • The transfer of predictive models using various chemometric techniques has been reported for FTNIR and scanning-grating based NIR instruments with respect relatively dry samples (<10% water). Some of the currently used transfer techniques include slope and bias correction (SBC), direct standardization (DS), piecewise direct standardization (PDS), orthogonal signal correction (OSC), finite impulse transform (FIR) and wavelet transform (WT) and application of neural networks. In a previous study (Greensill et at., 2001) on calibration transfer for wet samples (intact melons) across silicon diode array instrumentation, we reported on the performance of various techniques (SBC, DS, PDS, double window PDS (DWPDS), OSC, FIR, WT, a simple photometric response correction and wavelength interpolative method and a model updating method) in terms of RMSEP and Fearns criterion for comparison of RMSEP. In the current study, we compare these melon transfer results to a similar study employing pairs of spectrometers for non-invasive prediction of soluble solid content of peaches.

  • PDF