• 대한전자공학회논문지SD
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• 제45권6호
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• pp.22-27
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• 2008

4H-SiC의 전자와 정공의 이온화계수 $\alpha$와 $\beta$로부터 유효이온화계수 $\gamma$를 추출함으로써 4H-SiC 쇼트키 다이오드의 항복전압과 온-저항을 위한 해석적 모델을 유도하였다. 해석적 모델로부터 구한 항복전압을 실험 결과와 비교하였고, 도핑 농도 함수의 온-저항도 이미 발표된 결과와 비교하였다. 항복전압은 $10^{15}{\sim}10^{18}\;cm^{-3}$의 도핑 농도 범위에서 실험 결과와 10% 이내의 오차로 잘 일치하였다. 온-저항을 위한 해석적 결과는 $3{\times}10^{15}{\sim}2{\times}10^{16}\;cm^{-3}$의 범위에서 실험 결과와 매우 잘 일치하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.113-114
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• 2009

Silicon carbide is one of the most attractive and promising wide band-gap semiconductor material with excellent physical properties and huge potential for electronic applications. Up to now, the most successful method for growth of large SiC crystals with high quality is the physical vapor transport (PVT) method [1, 2]. Since further reduction of defect densities in larger crystal are needed for the true implementation of SiC devices, many researchers are focusing to improve the quality of SiC single crystal through the process modifications for SiC bulk growth or new material implementations [3, 4]. It is well known that for getting high quality SiC crystal, source materials with high purity must be used in PVT method. Among various source materials in PVT method, a SiC powder is considered to take an important role because it would influence on crystal quality of SiC crystal as well as optimum temperature of single crystal growth, the growth rate and doping characteristics. In reality, the effect of powder on SiC crystal could definitely exhibit the complicated correlation. Therefore, the present research was focused to investigate the quality difference of SiC crystal grown by conventional PVT method with using various SiC powders. As shown in Fig. 1, we used three SiC powders with different particles size. The 6H-SiC crystals were grown by conventional PVT process and the SiC seeds and the high purity SiC source materials are placed on opposite side in a sealed graphite crucible which is surrounded by graphite insulation[5, 6]. The bulk SiC crystal was grown at $2300^{\circ}C$ of the growth temperature and 50mbar of an argon pressure. The axial thermal gradient across the SiC crystal during the growth is estimated in the range of $15\sim20^{\circ}C/cm$. The chemical etch in molten KOH maintained at $450^{\circ}C$ for 10 min was used for defect observation with a polarizing microscope in Nomarski mode. Electrical properties of bulk SiC materials were measured by Hall effect using van der Pauw geometry and a UV/VIS spectrophotometer. Fig. 2 shows optical photographs of SiC crystal ingot grown by PVT method and Table 1 shows electrical properties of SiC crystals. The electrical properties as well as crystal quality of SiC crystals were systematically investigated.

• Composites Research
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• 제25권4호
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• pp.93-97
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• 2012

본 연구에서는 액상가압공정을 이용하여 탄소나노섬유(carbon nano fiber, CNF)를 강화재로 하는 AZ91 마그네슘 복합재를 제조하였다. CNF의 분산성 및 마그네슘 합금 용탕과의 젖음성을 향상시키고자 CNF를 마이크로 크기의 실리콘 카바이드 입자(silicon carbide particle, $SiC_p$)와 혼합하였다. 또한, CNF와 $SiC_p$의 혼합분말에 무전해도금법으로 니켈을 코팅하였다. 액상가압공정에서 AZ91 용탕은 무처리된 CNF, CNF와 $SiC_p$의 혼합분말(CNF+$SiC_p$), 니켈 코팅된 CNF와 $SiC_p$의 복합분말((CNF+$SiC_p$)/Ni)과 같이 세 종류의 강화재로 정수압에 의해 함침하여 복합재를 제조하였다. 무처리된 CNF 강화 복합재료에서는 일부 CNF 응집체가 관찰되었으나 CNF+$SiC_p$ 및 (CNF+$SiC_p$)/Ni 강화 복합재에서는 CNF가 기지재 내에 균일하게 분산되었음을 확인하였다. 압축시험결과, CNF+$SiC_p$ 및 (CNF+$SiC_p$)/Ni 강화 복합재의 압축강도가 무처리된 CNF 강화 복합재보다 각각 38%와 28% 향상되었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1254_1255
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• 2009

The composites were fabricated by adding 30, 35, 40, 45[vol.%] Zirconium Diboride(hereafter, $ZrB_2$) powders as a second phase to Silicon Carbide(hereafter, SiC) matrix. The physical, mechanical and electrical properties of electroconductive SiC ceramic composites by Spark Plasma Sintering(hereafter, SPS) were examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed in the XRD analysis. The relative density of SiC+30[vol.%]$ZrB_2$, SiC+35[vol.%]$ZrB_2$, SiC+40[vol.%]$ZrB_2$ and SiC+45[vol.%]$ZrB_2$ composites are 88.64[%], 76.80[%], 79.09[%] and 88.12[%], respectively. The XRD phase analysis of the electroconductive SiC ceramic composites reveals high of SiC and $ZrB_2$ and low of $ZrO_2$ phase. The electrical resistivity of SiC+30[vol.%]$ZrB_2$, SiC+35[vol.%]$ZrB_2$, SiC+40[vol.%]$ZrB_2$ and SiC+45[vol.%]$ZrB_2$ composites are $6.74{\times}10^{-4}$, $4.56{\times}10^{-3}$, $1.92{\times}10^{-3}$ and $4.95{\times}10^{-3}[{\Omega}{\cdot}cm]$ at room temperature, respectively. The electrical resistivity of SiC+30[vol.%]$ZrB_2$, SiC+35[vol.%]$ZrB_2$, SiC+40[vol.%]$ZrB_2$ and SiC+45[vol.%]$ZrB_2$ are Positive Temperature Coefficient Resistance(hereafter, PTCR) in temperature ranges from 25[$^{\circ}C$] to 500[$^{\circ}C$]. It is convinced that SiC+40[vol.%]$ZrB_2$ composite by SPS can be applied for heater or electrode.

• 한국항공우주학회지
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• 제37권12호
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• pp.1245-1251
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• 2009

고온/고압, 장시간 연소조건에서 비삭마에 가까운 삭마 특성을 갖는 초소형 목삽입재 선정을 위한 연구를 수행하였다. 평가 소재로서 C/SiC, CIT, W/$Y_2O_3$를 선정하였으며, 연소시간 20초의 내열성능평가모타로 시험하였다. 시험 결과 W/$Y_2O_3$가 가장 우수하였으나, 균열이 발생하였다. 본 연구를 통하여 각 소재들의 열반응 특성 및 내열 성능을 이해할 수 있었으며, W/$Y_2O_3$의 적용가능성을 확인하였다.

• 방사선산업학회지
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• 제4권3호
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• pp.265-269
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• 2010

Silicon-based non-oxide ceramic carbide fiber is one of the leading candidate ceramic materials for engineering applications because of its excellent mechanical properties at high temperature and good chemical resistance. In this study, polycarbosilane(PCS) and zirconium butoxide were used as a precursor to prepare polyzirconocarbosilane (PZC) fibers. A polymer solution was prepared by dissolving PCS in zirconium butoxide (50/50 wt%). This solution was heated at $250^{\circ}C$ in a nitrogen atmosphere for 2 hour with stirring, and then dried in a vacuum oven for 48 hour. PZC fibers were fabricated using an electrospinning technique. The fibers were irradiated with an electron beam to induce structural crosslinking. Crosslinked PZC fibers were heat treated at $1,300^{\circ}C$ in a nitrogen atmosphere. The microstructures of PZC fibers were examined by SEM. Chemical structures of PZC fibers were examined by FT-IR and XRD. Thermal stability of PZC fibers was investigated by TGA.

• 한국산학기술학회논문지
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• 제20권3호
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• pp.29-34
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• 2019

SiC는 큰 에너지 밴드 갭을 갖고, 불순물 도핑에 의해 p형 및 n형 전도의 제어가 용이해서 고온용 전자부품 소재로 활용이 가능한 재료이다. 특히 $N_2$ 분위기, $2000^{\circ}C$에서 ${\beta}-SiC$ 분말로부터 제조한 다공질 n형 SiC 반도체의 경우, $800{\sim}1000^{\circ}C$에서의 도전율 값이 단결정 SiC와 비교해서 비슷하거나 오히려 높은 값을 나타내었으며, 반면에 열전도율은 치밀한 SiC 세라믹스와 비교시 1/10~1/30 정도로 낮은 값을 나타내었다. 본 연구에서는 소결온도를 낮추기 위해 n형 ${\beta}-SiC$에 함침 시킨 polycarbosilane (PCS)의 열분해에 의한 반응소결 공정 ($1400{\sim}1600^{\circ}C$)으로 다공질 소결체를 제작하였다. 함침 및 소결공정($N_2$ 분위기, $1600^{\circ}C$, 3시간)을 반복함에 따라 상대밀도는 크게 증가하지 않았지만 Seebeck 계수 및 도전율은 크게 증가하였다. 본 연구에서의 열전변환 효율을 반영하는 power factor는 고온에서 상압소결 공정으로 제작한 다공질 SiC 반도체에 비해 1/100~1/10 정도 작게 나타났지만, 미세구조 및 캐리어 밀도를 정밀하게 제어하면, 본 연구에서의 반응소결 공정으로 제작한 SiC 반도체의 열전물성은 크게 향상될 것으로 판단된다.

• 한국입자에어로졸학회지
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• 제8권4호
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• pp.173-180
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• 2012

SiC particles, 8.3 ${\mu}m$ in volume average diameter, were chlorinated in an alumina tubular reactor, 2.4 cm in diameter and 32 cm in length, with reactor temperature varied from 100 to $1200^{\circ}C$. The flow rate of the gas admitted to the reactor was held constant at 300 cc/min, the mole fraction of chlorine in the gas at 0.1 and the reaction time at 4 h. The chlorination was negligibly small up to the temperature of $500^{\circ}C$. Thereafter, the degree of chlorination increased remarkably with increasing temperature until $900^{\circ}C$. As the temperature was increased further from 900 to $1200^{\circ}C$, the increments in chlorination degree were rather small. At $1200^{\circ}C$, the chlorination has nearly been completed. The surface area of the residual carbon varied with chlorination temperature in a manner similar to that with the variation of chlorination degree with temperature. The surface area at $1200^{\circ}C$ was 912 $m^{2}/g$. A simple model was developed to predict the conversion of a SiC under various conditions. A Langmuir-Hinshelwood type rate law with two rate constants was employed in the model. Assuming that the two rate constants, $k_{1}$ and $k_{2}$, can be expressed as $A_{1e}^{-E_{1}/RT}$ and $A_{2e}^{-E_{2}/RT}$, the four parameters, $A_{1}$, $E_{1}$, $A_{2}$, and $E_{2}$ were determined to be 32.0 m/min, 103,071 J/mol, 2.24 $m^{3}/mol$ and 39,526 J/mol, respectively, through regression to best fit experimental data.

• 전기학회논문지
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• 제56권9호
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• pp.1602-1608
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• 2007

The composites were fabricated, respectively, using 61[vol.%] SiC-39[vol.%] $TiB_2$ and using 61[vol.%] SiC-39[vol.%] $ZrB_2$ powders with the liquid forming additives of 12[wt%] $Al_2O_3+Y_2O_3$ by hot pressing annealing at $1650[^{\circ}C]$ for 4 hours. Reactions between SiC and transition metal $TiB_2$, $ZrB_2$ were not observed in this microstructure. The result of phase analysis of composites by XRD revealed SiC(6H, 3C), $TiB_2$, $ZrB_2$ and $YAG(Al_5Y_3O_{12})$ crystal phase on the Liquid-Phase-Sintered(LPS) $SiC-TiB_2$, and $SiC-ZrB_2$ composite. $\beta\rightarrow\alpha-SiC$ phase transformation was occurred on the $SiC-TiB_2$ and $SiC-ZrB_2$ composite. The relative density, the flexural strength and Young's modulus showed the highest value of 98.57[%], 249.42[MPa] and 91.64[GPa] in $SiC-ZrB_2$ composite at room temperature respectively. The electrical resistivity showed the lowest value of $7.96{\times}10^{-4}[\Omega{\cdot}cm]$ for $SiC-ZrB_2$ composite at $25[^{\circ}C]$. The electrical resistivity of the $SiC-TiB_2$ and $SiC-ZrB_2$ composite was all positive temperature coefficient resistance (PTCR) in the temperature ranges from $25[^{\circ}C]$ to $700[^{\circ}C]$. The resistance temperature coefficient of composite showed the lowest value of $1.319\times10^{-3}/[^{\circ}C]$ for $SiC-ZrB_2$ composite in the temperature ranges from $100[^{\circ}C]$ to $300[^{\circ}C]$ Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites.

• 방사성폐기물학회지
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• 제16권2호
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• pp.233-242
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• 2018

본 연구에서는 탄소강 심부시추공 처분용기가 가지는 고온에서의 물성 저하와 내부식성 문제 등을 해결하기 위하여, 열전도도가 우수한 SiC를 이용한 심부시추공 처분용기의 제작 가능성을 살펴보았다. 먼저 사용후핵연료 집합체 1다발을 수용할 수있는 심부시추공 처분용기를 설계하였으며, 설계된 처분용기는 내부 SiC 기밀용기와 취급 편의와 심부정치를 위한 외부 스테인리스 용기로 구성하였다. 그리고 SiC 세라믹 용기의 제작 가능성을 확인하기 위해, 1/3 규모의 소형 SiC 용기를 실제 제작하였다. 제작된 SiC 용기에서 시편을 추출하여 열전도도를 측정하였으며, KURT 지하 $70^{\circ}C$ 고온조건에서 3년간 내구성 시험도 실시하였다. 그 결과 SiC는 $100^{\circ}C$에서도 $70W{\cdot}m^{-1}{\cdot}K^{-1}$ 이상의 열전도도를 보였으며, 내구성 시험 후에도 변화가 전혀 보이지 않았다. 따라서 SiC는 높은 열전도도와 우수한 내부식성을 갖고 있어, 심부시추공 처분용기 재료로 적합하다고 보았다.