• 제목/요약/키워드: silicon anode

검색결과 164건 처리시간 0.021초

Si-Containing Nanostructures for Energy-Storage, Sub-10 nm Lithography, and Nonvolatile Memory Applications

  • 정연식
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.108-109
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    • 2012
  • This talk will begin with the demonstration of facile synthesis of silicon nanostructures using the magnesiothermic reduction on silica nanostructures prepared via self-assembly, which will be followed by the characterization results of their performance for energy storage. This talk will also report the fabrication and characterization of highly porous, stretchable, and conductive polymer nanocomposites embedded with carbon nanotubes (CNTs) for application in flexible lithium-ion batteries. It will be presented that the porous CNT-embedded PDMS nanocomposites are capable of good electrochemical performance with mechanical flexibility, suggesting these nanocomposites could be outstanding anode candidates for use in flexible lithium-ion batteries. Directed self-assembly (DSA) of block copolymers (BCPs) can generate uniform and periodic patterns within guiding templates, and has been one of the promising nanofabrication methodologies for resolving the resolution limit of optical lithography. BCP self-assembly processing is scalable and of low cost, and is well-suited for integration with existing semiconductor manufacturing techniques. This talk will introduce recent research results (of my research group) on the self-assembly of Si-containing block copolymers for the achievement of sub-10 nm resolution, fast pattern generation, transfer-printing capability onto nonplanar substrates, and device applications for nonvolatile memories. An extraordinarily facile nanofabrication approach that enables sub-10 nm resolutions through the synergic combination of nanotransfer printing (nTP) and DSA of block copolymers is also introduced. This simple printing method can be applied on oxides, metals, polymers, and non-planar substrates without pretreatments. This talk will also report the direct formation of ordered memristor nanostructures on metal and graphene electrodes by the self-assembly of Si-containing BCPs. This approach offers a practical pathway to fabricate high-density resistive memory devices without using high-cost lithography and pattern-transfer processes. Finally, this talk will present a novel approach that can relieve the power consumption issue of phase-change memories by incorporating a thin $SiO_x$ layer formed by BCP self-assembly, which locally blocks the contact between a heater electrode and a phase-change material and reduces the phase-change volume. The writing current decreases by 5 times (corresponding to a power reduction of 1/20) as the occupying area fraction of $SiO_x$ nanostructures varies.

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n-채널 다결정 실리콘 박막 트랜지스터의 문턱전압 변동 보상을 위한 전압 기입 AMOLED 화소회로 (A Voltage Programming AMOLED Pixel Circuit Compensating Threshold Voltage Variation of n-channel Poly-Si TFTs)

  • 정훈주
    • 한국전자통신학회논문지
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    • 제8권2호
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    • pp.207-212
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    • 2013
  • 본 논문에서는 n-채널 저온 다결정 실리콘 박막 트랜지스터의 문턱전압 변동을 보상할 수 있는 전압 기입 AMOLED 화소회로를 제안하였다. 제안한 6T1C 화소회로는 5개의 스위칭 박막 트랜지스터, 1개의 OLED 구동 박막 트랜지스터 및 1개의 정전용량으로 구성되어 있다. SmartSpice 시뮬레이션 결과, 구동 트랜지스터의 문턱전압이 ${\pm}0.33$ V 변동시 최대 OLED 전류의 오차율은 7.05 %이고 Vdata = 5.75 V에서 OLED 양극 전압 오차율은 0.07 %로 제안한 6T1C 화소회로가 구동 트랜지스터의 문턱전압 변동에도 균일한 OLED 전류를 공급함을 확인하였다.

배터리 전극 설계를 위한 응력-확산 완전연계 멀티스케일 해석기법 (Stress-diffusion Full Coupled Multiscale Simulation Method for Battery Electrode Design)

  • 장성민;문장혁;조경재;조맹효
    • 한국전산구조공학회논문집
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    • 제26권6호
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    • pp.409-413
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    • 2013
  • 본 논문에서는 배터리 전극 해석을 위한 응력-확산 완전 연계 멀티스케일 해석기법을 고안하였다. 제안된 방법에서는 먼저 리튬농도에 따른 확산계수 및 기계적 물성을 계산하였다. 이를 고려하여 확산에 의한 응력뿐만 아니라 응력에 의한 확산 거동 변화까지 모두 고려한 응력-확산 완전연계 연속체 모델을 유한요소 기반으로 구성하였다. 이를 통해 실리콘 나노와이어 음극의 충/방전 전산 모사를 수행하였다. 이러한 해석결과를 통하여 기존의 확산에 의한 응력 연속체 모델보다 더 실제와 가까운 해석결과를 제안된 방법이 보여줌을 확인할 수 있었다.

Analysis on the Formation of Li4SiO4 and Li2SiO3 through First Principle Calculations and Comparing with Experimental Data Related to Lithium Battery

  • Doh, Chil-Hoon;Veluchamy, Angathevar;Oh, Min-Wook;Han, Byung-Chan
    • Journal of Electrochemical Science and Technology
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    • 제2권3호
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    • pp.146-151
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    • 2011
  • The formation of Li-Si-O phases, $Li_4SiO_4$ and $Li_2SiO_3$ from the starting materials SiO and $Li_2O$ are analyzed using Vienna Ab-initio Simulation (VASP) package and the total energies of Li-Si-O compounds are evaluated using Projector Augmented Wave (PAW) method and correlated the structural characteristics of the binary system SiO-$Li_2O$ with experimental data from electrochemical method. Despite $Li_2SiO_3$ becomes stable phase by virtue of lowest formation energy calculated through VASP, the experimental method shows presence of $Li_4SiO_4$ as the only product formed when SiO and $Li_2O$ reacts during slow heating to reach $550^{\circ}C$ and found no evidence for the formation of $Li_2SiO_3$. Also, higher density of $Li_4SiO_4$(2.42 g $ml^{-1}$) compared to the compositional mixture $1SiO_2-2Li_2O$ (2.226 g $ml^{-1}$) and better cycle capacity observed through experiment proves that $Li_4SiO_4$ as the most stable anode supported by better cycleabilityfor lithium ion battery remains as paradox from the point of view of VASP calculations.