• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.28-28
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• 1997

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.23.1-23
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• 2002

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.05a
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• pp.69-69
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• 1997

• Journal of computational fluids engineering
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• v.18 no.3
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• pp.67-71
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• 2013

Recently, the rapid development of the semiconductor industry induces the prompt technical progress in the area of device integration and the application of large diameter wafers for the price competitiveness. As a result of the usage of large wafers in the semiconductor industry, the silicon carbide components which have layers of silicon carbide on graphite or RBSC substrates is getting widely used due to the advantages of SiC such as high hardness and strength, chemical and ionic resistant to all the environments superior than other ceramic materials. For the uniform and homogeneous deposition of silicon carbide on these huge components, it needs to know about the gas flow in the CVD reactor, not only for the delicate adjustment of the process variables but more essentially for the cost reduction for the shape change of specimens and their holders on the stage of reactor. In this research, the CFD simulation is challenged for the prediction of the inner distribution of the gas velocity. Chemical reaction simulation is used to predict the distribution of concentration of the reacting gas with the rotating velocity of the stage. With the increase of the rotating speed, more uniform distribution of the reacting gas on the surface of the stage was obtained.

• Transactions of the Korean hydrogen and new energy society
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• v.25 no.1
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• pp.28-38
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• 2014

The organic-inorganic composite membrane in polymer exchange membrane fuel cells (PEMFCs) have several fascinating technological advantages such as a proton conductivity, thermal stability and mechanical properties. As the inorganic filler, silicon carbide (SiC) fiber have been used in various fields due to its unique properties such as thermal stability, conductivity, and tensile strength. In this study, composite membrane was successfully fabricated by modified-silicon carbide fiber. Modified process, as a novel process in SiC, takes reaction by phosphoric acid after oxidation process (generated homogeniusly $SiO_2$ layer on SiC fiber). The mechanical property which was conducted by tensile test of the 5wt% modified-$SiO_2@SiCf$ composite membrane was better than that of Aquivion casting membrane as well as ion cxchange capacity(IEC) and proton conductivity. In addition, the single cell performance was observed that the 5wt% modified-$SiO_2@SiCf$ composite membrane was approximately $0.2A/cm^2$ higher than that of a Aquivion casting electrolyte membrane and electrochemical impedance was improved with the charge transfer resistance and membrane resistance.

• Polymer(Korea)
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• v.38 no.6
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• pp.782-786
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• 2014

Various kinds of thermal conductive ceramic/polymer composites (aluminum nitride, aluminum oxide, boron nitride, and silicon carbide/epoxy) were prepared by a casting method and their optical images were observed by FE-SEM. Among these, SiC/epoxy composite shows inhomogeneous dispersion features of SiC and air voids in the epoxy matrix layer, resulting in undesirable thermal conductive properties. To enhance the thermal conductivities of SiC/epoxy composites, the epoxy wetting method which can directly infiltrate the epoxy droplet onto filtrated SiC cake was employed to fabricate the homogeneously dispersed SiC/epoxy composite for ideal thermal conductive behavior, with maximum thermal conductivity of 3.85W/mK at 70 wt% of SiC filler contents.

• Journal of the Korean Ceramic Society
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• v.47 no.2
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• pp.157-162
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• 2010

Effect of starting SiC particle size on nitridation rate and flexural strength of $Si_3N_4$-bonded-SiC (SNBSC) ceramics was investigated by using SiC particles of different size (${\sim}200\;{\mu}m$, ${\sim}100\;{\mu}m$ and ${\sim}45\;{\mu}m$). The specimen prepared from smaller SiC particles resulted in higher nitridation rate after nitridation at $1450^{\circ}C$, owing to the lower packing density in green body. The flexural strength showed maxima after 1-h nitridation for all specimens and then decreased with prolonged nitridation because of local densification-induced pore coarsening. The specimen prepared from smaller SiC particles showed better flexural strength because of smaller pore size and partly higher nitridation rate in the specimen. A maximal flexural strength of 29 MPa was obtained in the specimen with a density of $2.04\;g{\cdot}cm^3$, which was prepared from $45\;{\mu}m$-SiC particles.

• Composites Research
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• v.25 no.6
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• pp.172-177
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• 2012

For the manufacture of low resistance Si-SiC composite, the properties of reaction sintering in the green body of various mixed ${\alpha}$-SiC powder size with the various carbon contents from 0wt% to 20wt% were investigated. The samples preparation was green body by CIP method under this condition, molten silicon infiltration process was conducted to reaction bonded silicon carbide. the results of sintered density, 3-point bending strength and resistance of analysis showed that varied carbon and silicon melt reacted to convert to fine ${\beta}$-SiC particle and the structure was changed to dense material. The amount of fine ${\beta}$-SiC particle was gradually increased as carbon content increase. According to mixed composite, it's mechanical and specific resistivity properties was strongly influenced by carbon content within 10wt% more then carbon content 10wt% was strongly influenced by phase transition.

• Journal of the Korean Ceramic Society
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• v.36 no.1
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• pp.97-105
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• 1999

In the binary system of SiC and carbon, porosity and pore size distribution of green body was controlled by varying pH, by the addition of polyelectrolyte dispersants, and by using different particle size of starting powders. The preforms having different green microstructure were fabricated by slip casting from suspensions having different dispersion condition. The reaction bonding process was carried out for these preforms. The condition of reaction bonding was 1600$^{\circ}C$ and 20 min. under vacuum atmosphere. The analyses of optical and SEM were studied to investigate the effect of green microstructure on that of reaction bonded silicon carbide and subsequently the mechanical properties of sintered body was investigated. Different green microstructures were obtained from suspensions having different dispersion condition. It was found that the pore size could be remarkably reduced for a fine SiC(0.5$\mu\textrm{m}$). The bimodal microstructure was not found in the present study, which is frequently observed in the typical reaction bonded silicon carbide. It is considered that the ratio between SiC and C was responsible for the formation of bimodal microstructure. For the preform fabricated from the well dispersed suspension, the 3-point bending strength of reaction-bonded silicon carbide was 310${\pm}$40 MPa compared to the specimen fabricated from relatively agglomerated particles having lower value 260${\pm}$MPa.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.2
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• pp.45-49
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• 2019

Relatively fine silicon carbide (SiC) crystalline aggregates have been synthesized with the carbonized rice husks, paper sludge, coffee grounds as the carbon sources and the silica powder. The main reaction source to obtain silicon carbide (SiC) aggregates from the mixture of carbon sources and silica was inferred as the gaseous silicon monoxide (SiO) phase, being created from this mixture through the carbothermal reduction reaction. The silicon carbide (SiC) crystalline aggregates, fabricated from the carbonized rice husks and paper sludge, coffee grounds and silica ($SiO_2$) powder, were investigated by XRD patterns, FE-SEM and FE-TEM images. In these specimens, obtained from the carbonized rice husks, paper sludge and silica, XRD patterns showed rather high strong peak of (111) plane near $35^{\circ}$. The FE-TEM images and patterns of specimens, synthesized from carbonized rice husks, paper sludge, coffee grounds and silica under Ar atmosphere, showed relatively fine particles under $1{\mu}m$ and crystalline peak (110) of silicon carbide (SiC) diffraction pattern.