• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.6
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• pp.383-388
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• 2019

High purity SiC fine powder with metal impurity contents of less than 1 ppm was synthesized by improved carbothermal reduction process, and the synthesized powder was used for SiC single crystal growth in RF heating PVT device at temperature above 2,100℃. In-situ x-ray image analyzer was used to observe the sublimation of the powder and single crystal growth behavior during the growth process. SiC powder was used as a source of single crystal growth, exhausted from the outside of the graphite crucible at the growth temperature and left graphite residues. During the growth, the flow of raw materials was concentrated in the middle and influenced the growth behavior of SiC single crystals. This is due to the difference in temperature distribution inside the crucible due to the fine powder. After the single crystal growth was completed, the single crystal ingot was cut into a 1 mm thick single crystal substrate and finely polished using a diamond abrasive slurry. A dark yellow 4H-SiC was observed overall of single crystal substrate, and the polycrystals generated in the outer part may be caused by the incorporation of impurities such as the bubble layer mixed in the process of attaching the seed crystal to the seed holder.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.4
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• pp.596-601
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• 2020

Silicon carbide is considered a potentially useful material for high-temperature electronic devices because of its large band gap energy and p-type or n-type conduction that can be controlled by impurity doping. Accordingly, the thermoelectric properties of -SiC powder prepared by refined diatomite were investigated for high value-added applications of natural diatomite. -SiC powder was synthesized by a carbothermal reduction of the SiO₂ in refined diatomite using carbon black. An acid-treatment process was then performed to eliminate the remaining impurities (Fe, Ca, etc.). n-Type semiconductors were fabricated by sintering the pressed powder at 2000℃ for 1~5h in an N2 atmosphere. The electrical conductivity increased with increasing sintering time, which might be due to an increase in carrier concentration and improvement in grain-to-grain connectivity. The carrier compensation effect caused by the remaining acceptor impurities (Al, etc.) in the obtained -SiC had a deleterious influence on the electrical conductivity. The absolute value of the Seebeck coefficient increased with increasing sintering time, which might be due to a decrease in the stacking fault density accompanied by grain or crystallite growth. On the other hand, the power factor, which reflects the thermoelectric conversion efficiency of the present work, was slightly lower than that of the porous SiC semiconductors fabricated by conventional high-purity -SiC powder, it can be stated that the thermoelectric properties could be improved further by precise control of an acid-treatment process.

• Composites Research
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• v.25 no.4
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• pp.93-97
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• 2012

Carbon nano fibers (CNFs) reinforced magnesium alloy (AZ91) matrix composites have been fabricated by liquid pressing process. In order to improve the dispersibility of CNFs and the wettability with magnesium alloy melt, CNFs were mixed with submicron sized SiC particles ($SiC_p$). Also, the mixture of CNFs and $SiC_p$ were coated with Ni by electroless plating. In liquid pressing process, AZ91 melts have been pressed hydrostatically and infiltrated into three reinforcement preforms of only CNFs, the mixture of CNFs and $SiC_p$ (CNF+$SiC_p$), and Ni coated CNFs and $SiC_p$ ((CNF+$SiC_p$)/Ni). Some CNFs agglomerates were observed in only CNFs reinforced composite. In cases of the composites reinforce with CNF+$SiC_p$ and (CNF+$SiC_p$)/Ni, CNFs were dispersed homogeneously in the matrix, which resulted in the improvement of mechanical properties. The compressive strengths of CNF+$SiC_p$ and (CNF+$SiC_p$)/Ni reinforced composites were 38% and 28% higher than that of only CNFs composite.

• Journal of Korean Society of Environmental Engineers
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• v.37 no.12
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• pp.668-673
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• 2015

Alumina-based catalysts with different Ce loadings were studied in the decomposition of $CF_4$ using microwave heating system. Heating material of microwave system used Silicon Carbide. The crystallographic phases of catalysts were investigated by XRD and decomposition rates of $CF_4$ were examined by GC-TCD. The catalysts of 10 wt% Ce modified $Al_2O_3$ showed higher $CF_4$ decomposition rate than un-modified $Al_2O_3$ for $500^{\circ}C$ reaction temperature. The k value of catalysts shows the order of $Ce(20)/Al_2O_3=Ce(0)/Al_2O_3<Ce(5)/Al_2O_3<Ce(10)/Al_2O_3$. XRD patterns of $Ce(0)/Al_2O_3$ were no difference before and after the reaction and showed $Al_2O_3$ phases. With the increase in Ce loadings, $CeO_2$, $AlF_3$ of XRD peaks was observed. The results was indicated that Ce modifed $Al_2O_3$ than un-modifed $Al_2O_3$ was decreased reaction temperature to $200^{\circ}C$ with same decomposition rate. Also the appropriated cerium sulfate loadings on $Al_2O_3$ were 5~10 wt%.

• Applied Chemistry for Engineering
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• v.10 no.6
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• pp.843-847
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• 1999

In this research, C/SiC composites, i.e. activated carbon coated with SiC obtained from dichlorodimethylsilane(DDS) and hydrogen, have been made by chemical vapor infiltration(CVI) in a fluidized bed reactor. Activated carbons of sizes of 4~12, 12~20, and 20~40 mesh were used. After deposition the surface area, the amount and the shape of deposit of each sample were observed at different concentrations of reactant DDS, sizes of activated carbon, reaction pressures and reaction times. The experimental results showed that uniform deposition in the pores of sample was obtained at a lower concentration of DDS and a lower pressure. Additionally, from the observation that the pore diameter and the surface area have minimum values at a certain time of deposition, it was known that deposition occurred inside of the pore at first and then on the outside of particle. Small particles of SiC were deposited uniformly on the surface of activated carbon at lower DDS concentrations and lower reaction pressures. The results were confirmed by SEM, TGA, the pore size distribution analyzer and BET.

• Restorative Dentistry and Endodontics
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• v.22 no.2
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• pp.609-621
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• 1997

The purpose of this study was to evaluate the shear bond strength of three light-cured glass ionomer cements to blood contaminated bovine dentin. The materials used in this study were Fuji II LC, Dyract and Variglass VLC. The dentin conditioners were 10% polyacrylic acid, 10% maleic acid and 10% phosphoric acid. 180 lower anterior bovine teeth were selected in this study. The teeth were embedded in acrylic resin and were grounded with 320 to 600 grit silicon carbide paper to create a flat dentin surface. The teeth were divided into SIX groups. The experimental procedures in six groups were as follows; Group l(GF) : Samples bonded to dentin surface with Fuji II LC after 10% polyacrylic acid treatment. Group 2(BGF) : Samples bonded to dentin surface with Fuji II LC after 10% polyacrylic acid treatment and blood contamination. Group 3(MD) : Samples bonded to dentin surface with Dyract after 10% maleic acid treatment. Group 4(BMD) : Samples bonded to dentin surface with Dyract after 10% maleic acid treatment and blood contamination. Group 5(PV) : Samples bonded to dentin surface with Variglass VLC after 10% phosphoric acid treatment. Group 6(BPV) : Samples bonded-to dentin surface with Variglass VLC after 10% phosphoric acid treatment and blood contamination. Group 1,3 and 5 were classified into the control groups, while group 2,4 and 6 were classified into the experimental groups. Each group contained 30 samples. After 24 hours water storage at $37^{\circ}C$, all smples were subjected to a shear load to fracture at a cross head speed of 1.0 mm/min with Instron universal testing machine(No. 4467). Debonded surfaces were observed under Scanning Electron Microscope(Hitachi S-2300) at 20kvp. The data were evaluated statistically at the 95% confidence level with Student's t-test. The following results obtained; 1. Shear bond strengths were higher in the control groups(1,3,5 group) than in the experimental groups(2,4,6 group). 2. The shear bond strength of group 5(PV) was the highest in the control groups, and the group 5 was significantly higher than the group l(GF) on the shear bond strength. 3. The group 4(BMD) was the highest on the shear bond strength, and the group 2(BGF) was the lowest in the experimental groups. The group 4(BMD) and 6(BPV) showed a significant difference with the group 2 on the shear bond strength. 4. All the groups showed an adhesive-cohesive failure. except the group 2(BGF) showing adhesive failure.

• Korean Journal of Materials Research
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• v.9 no.10
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• pp.1006-1011
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• 1999

B-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared by plasma-enhanced chemical-vapor deposition in a gas mixture of $SiH_4$, $CH_4$ and $B_2H_6$. Microstructures and chemical properties of a-SiC:H films grown with varing the volume ratio of $CH_4$ to $SiH_4$ were characterized with various analysis methods including scanning electron microscopy(SEM), X-ray diffractometry(XRD), Raman spectroscopy, Fourier-transform infrared (FTIR) spectroscopy. X-ray photoelectron spectroscopy(XPS), UV absorption spectroscopy and photoconductivity measurements. While Si:H films grown without $CH_4$ showed amorphous state, the addition of $CH_4$ during deposition enhanced the development of a microcrystalline phase. By introducing C atoms into the film, Si-Si and Si--$\textrm{H}_{n}$ bonds of a -Si:H films were gradually replaced by Si-C, C-C, and Si--$\textrm{C}_{n}\textrm{H}_{m}$ bonds. Consequently, the electrical resistivity and optical bandgap of a-SiC:H films were increased with the C concentration in the film.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.5
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• pp.188-192
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• 2016

In this work, the SiC powders were synthesized through the carbonized matter from the mixture of silica powder and rice husks. The SiC powders, obtained from the carbothermal reduction reaction of silica and carbonized rice husks, were investigated by XRD patterns, XPS, FE-SEM and FE-TEM. In the XRD patterns, the specimens showed clearly very high strong peak of (111) plane near $35^{\circ}$ as well as weak (220) and (311) peak respectively at approximately $60^{\circ}$ and $72^{\circ}$. Under Ar atmosphere, the power synthesized from the mixture (in case of mixing ratio, 6 : 4) of carbonized rice husks and silica showed mainly cubic SiC crystalline phase showing relatively lower ratio of hexagonal phase without residual carbon in XRD pattern. In the TEM analysis, the specimen, synthesized from carbonized rice husks and silica with mixing ratio of 6 : 4 under Ar atmosphere, showed relatively fine particles under $5{\mu}m$ and a crystalline SiC phase of (100) diffraction pattern.

• The Journal of Advanced Prosthodontics
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• v.8 no.1
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• pp.1-8
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• 2016

PURPOSE. The purpose of this study was to evaluate the efficacy of two different metal conditioners for non-precious metal alloys for the bonding of porcelain to a cobalt-chromium (Co-Cr) alloy. MATERIALS AND METHODS. Disk-shaped specimens ($2.5{\times}10.0mm$) were cast with Co-Cr alloy and used as adherend materials. The bonding surfaces were polished with a 600-grid silicon carbide paper and airborne-particle abraded using $110{\mu}m$ alumina particles. Bonding specimens were fabricated by applying and firing either of the metal conditioners on the airborne-particle abraded surface, followed by firing porcelain into 5 mm in diameter and 3 mm in height. Specimens without metal conditioner were also fabricated. Shear bond strength for each group (n=8) were measured and compared (${\alpha}=.05$). Sectional view of bonding interface was observed by SEM. EDS analysis was performed to determine the chemical elements of metal conditioners and to determine the failure modes after shear test. RESULTS. There were significant differences among three groups, and two metal conditioner-applied groups showed significantly higher values compared to the non-metal conditioner group. The SEM observation of the sectional view at bonding interface revealed loose contact at porcelain-alloy surface for non-metal conditioner group, however, close contact at both alloy-metal conditioner and metal conditioner-porcelain interfaces for both metal conditioner-applied groups. All the specimens showed mixed failures. EDS analysis showed that one metal conditioner was Si-based material, and another was Ti-based material. Si-based metal conditioner showed higher bond strengths compared to the Ti-based metal conditioner, but exhibited more porous failure surface failure. CONCLUSION. Based on the results of this study, it can be stated that the application of metal conditioner is recommended for the bonding of porcelain to cobalt-chromium alloys.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.9
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• pp.1757-1763
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• 2009

The composites were fabricated by adding 0, 15, 20, 25[vol.%] Zirconium Diboride(hereafter, $ZrB_2$) powders as a second phase to Silicon Carbide(hereafter, SiC) matrix. The physical, mechanical and electrical properties of electroconductive SiC ceramic composites by Spark Plasma Sintering(hereafter, SPS) were examined. Reactions between ${\beta}-SiC$ and $ZrB_2$ were not observed in the XRD analysis. The relative density of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ composites are 90.93[%], 74.62[%], 74.99[%] and 72.61[%], respectively. The XRD phase analysis of the electroconductive SiC ceramic composites reveals high of SiC and $ZrB_2$ and low of $ZrO_2$ phase. The lowest flexural strength, 108.79[MPa], shown in SiC+15[vol.%] $ZrB_2$ composite and the highest - 220.15[MPa] - in SiC+20[vol.%] $ZrB_2$composite at room temperature. The trend of the mechanical properties of the electroconductive SiC ceramic composites moves in accord with that of the relative density. The electrical resistivities of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ composites are 4.57${\times}10^{-1}$, 2.13${\times}10^{-1}$, 1.53${\times}10^{-1}$ and 6.37${\times}10^{-2}$[${\Omega}$ cm] at room temperature, respectively. The electrical resistivity of mono SiC, SiC+15[vol.%]$ZrB_2$. SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ are Negative Temperature Coefficient Resistance(hereafter, NTCR) in temperature ranges from 25[$^{\circ}C$] to 100[$^{\circ}C$]. The declination of V-I characteristics of SiC+20[vol.%]$ZrB_2$ composite is 3.72${\times}10^{-1}$. It is convinced that SiC+20[vol.%]$ZrB_2$ composite by SPS can be applied for heater or electrode above 1000[$^{\circ}C$]