• 제목/요약/키워드: silicon Carbide

검색결과 754건 처리시간 0.028초

우리나라 실리콘카바이드 취급사업장의 공기 중 분진 노출평가 (Exposure Assessment of Airborne Dust in Manufacturing Industries Using Silicon Carbide in Korea)

  • 이준정;피영규
    • 한국산업보건학회지
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    • 제21권3호
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    • pp.177-183
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    • 2011
  • Occupational exposure to silicon carbide dust of manufacturing industries has seldom been evaluated in Korea. Accordingly, we evaluated various silicon carbide dust concentrations in the breathing zone of workers between May 2010 and July 2010. To compare silicon carbide dust concentrations, three dust samplers including the Institute of Occupational Medicine (IOM) sampler, 37mm cassette sampler, and Aluminum cyclone sampler were used. A total of 5 manufacturing industries producing abrasive and refractory materials using silicon carbide were investigated. The geometric mean concentrations were 2.04, 0.97, and $0.48mg/m^3$ in inhalable, total and respirable silicon carbide dust, respectively. The geometric mean concentrations of silicon carbide in abrasive material manufacturing industries were slightly higher than that of refractory manufacturing industries, and finishing operations were higher than that of other operations. It was found that the results of exposure assessment in airborne dust at manufacturing industries using silicon carbide in Korea showed exceeding rate to American Conference of Governmental Industrial Hygienists Threshold Limit Value ($3mg/m^3$) was 10% in respirable dust samples. Therefore, with the consideration of the close relationship between smaller dust size and the occurrence of occupational respiratory diseases, it is suggested to promulgate the new occupational exposure limit for respirable silicon carbide dust.

폐슬러지를 이용한 SiC 합성에 관한 열역학적 고찰 (Thermodynamic Consideration for SiC synthesis by Using Sludged Silicon Powder)

  • 최미령;김영철
    • 반도체디스플레이기술학회지
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    • 제2권1호
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    • pp.21-24
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    • 2003
  • Sludged silicon powders that are generated during silicon ingot slicing process have potential usage as silicon source in fabricating silicon carbide powders by adding carbon. A thermodynamic calculation is performed to consider a plausible formation condition for the silicon carbide powders. A thin silicon oxide layer around silicon powder is sufficient to supply equilibrium oxygen partial pressure at the formation temperature($1400^{\circ}C$) of the silicon carbide in the Si-C-O ternary system. Formation of silicon carbide by using the sludged silicon powders is more efficient than by using silicon oxide powders.

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탄화규소계 세라믹스에서 미끄럼시의 마모 및 마모천이에 미치는 계면강도의 영향 (Effects of Interface Boundary Strength on Wear and Wear Transition during Sliding in Silicon Carbide Ceramics)

  • 김동진;박성길;류현;엄창도;조성재;김석삼
    • Tribology and Lubricants
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    • 제11권4호
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    • pp.21-27
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    • 1995
  • The effects of interface boundary strength on wear and wear transition during sliding have been investigated in silicon carbide ceramics. Three different microstructures, i.e., solid state sintered silicon carbide, liquid phase sintered silicon carbide and liquid phase sintered silicon carbide composite reinforced with TiB$_{2}$ particulates, were designed by hot pressing. Examinations of crack patterns and fracture modes indicated that interface boundaries were relatively strong between silicon carbide grains in the solid state sintered silicon carbide, intermediate in the liquid phase sintered silicon carbide and weak between silicon carbide grains and TiB$_{2}$ particles in the composite. Wear data and examinations of worn surfaces revealed that the wear behavior of these silicon carbide ceramics could be significantly affected by the interface strength. In the solid state sintered silicon carbide, the wear occurred by a grooving process. In the liquid phase sintered silicon carbide and composite, on the other hand, an abrupt transition in wear mechanism from initial grooving to grain pull-out process occurred during the test. The transition occurred significantly earlier in the composite than in the carbide.

Silicon-Based Anode with High Capacity and Performance Produced by Magnesiothermic Coreduction of Silicon Dioxide and Hexachlorobenzene

  • Ma, Kai
    • Journal of Electrochemical Science and Technology
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    • 제12권3호
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    • pp.317-322
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    • 2021
  • Silicon (Si) has been considered as a promising anode material because of its abundant reserves in nature, low lithium ion (Li+) intercalation/de-intercalation potential (below 0.5 V vs. Li/Li+) and high theoretical capacity of 4200 mA h/g. In this paper, we prepared a silicon-based (Si-based) anode material containing a small amount of silicon carbide by using magnesiothermic coreduction of silica and hexachlorobenzene. Because of good conductivity of silicon carbide, the cycle performance of the silicon-based anode materials containing few silicon carbide is greatly improved compared with pure silicon. The raw materials were formulated according to a silicon-carbon molar ratio of 10:0, 10:1, 10:2 and 10:3, and the obtained products were purified and tested for their electrochemical properties. After 1000 cycles, the specific capacities of the materials with silicon-carbon molar ratios of 10:0, 10:1, 10:2 and 10:3 were still up to 412.3 mA h/g, 970.3 mA h/g, 875.0 mA h/g and 788.6 mA h/g, respectively. Although most of the added carbon reacted with silicon to form silicon carbide, because of the good conductivity of silicon carbide, the cycle performance of silicon-based anode materials was significantly better than that of pure silicon.

고분자 복제 템플릿 방법을 이용하여 제조된 다공성 탄화규소의 미세구조 특성 (Characterization of Microstructure on Porous Silicon Carbide Prepared by Polymer Replica Template Method)

  • 이윤주;김수룡;김영희;신동근;원지연;권우택
    • 한국세라믹학회지
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    • 제51권6호
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    • pp.539-543
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    • 2014
  • Foam type porous silicon carbide ceramics were fabricated by a polymer replica method using polyurethane foam, carbon black, phenol resin, and silicon powder as raw materials. The influence of the C/Si mole ratio of the ceramic slurry and heat treatment temperature on the porous silicon carbide microstructure was investigated. To characterize the microstructure of porous silicon carbide ceramics, BET, bulk density, X-ray Powder Diffraction (XRD), and Scanning Electron Microscope (SEM) analyses were employed. The results revealed that the surface area of the porous silicon carbide ceramics decreases with increased heat treatment temperature and carbon content at the $2^{nd}$ heat treatment stage. The addition of carbon to the ceramic slurry, which was composed of phenol resin and silicon powder, enhanced the direct carbonization reaction of silicon. This is ascribed to a consequent decrease of the wetting angles of carbon to silicon with increasing heat treatment temperature.

탄화규소질 내화판에 있어서 내산화 첨가제의 영향 (The Effects of Various Anti-Oxidation Additives in Silicon Carbide Refractory Saggars)

  • 이준근
    • 한국세라믹학회지
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    • 제17권3호
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    • pp.145-150
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    • 1980
  • This paper deals with the clay-bonded silicon carbide refractory saggars in terms of its oxidation resistance. Oxidation is one of the major causes of failure in silicon carbide refractory saggars during its services. Various anti-oxidation additives are coated on or added into silicon carbide refractories and their effects are studied while other conditions are equal. Several conclusions can be derived for optimum anti-oxidation additive as: 1. The additive should wet each silicon carbide grain completely during its firing. 2. The additive should have high viscosity at temperatures around $1, 350^{\circ}C$ where most silicon carbide refractory saggars are being used. 3. The additive should have ability to absorb or desorb oxygen depending on the local atmosphere inside of saggar during it service. 4. The addition should be kept as minimum as possible to prevent any "sweating" or "bloating" phenomena.ing" phenomena.mena.

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Mechanical Properties of Chemical-Vapor-Deposited Silicon Carbide using a Nanoindentation Technique

  • Kim, Jong-Ho;Lee, Hyeon-Keun;Park, Ji-Yeon;Kim, Weon-Ju;Kim, Do-Kyung
    • 한국세라믹학회지
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    • 제45권9호
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    • pp.518-523
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    • 2008
  • The mechanical properties of silicon carbide deposited by chemical vapor deposition process onto a graphite substrate are studied using nanoindentation techniques. The silicon carbide coating was fabricated in a chemical vapor deposition process with different microstructures and thicknesses. A nanoindentation technique is preferred because it provides a reliable means to measure the mechanical properties with continuous load-displacement recording. Thus, a detailed nanoindentation study of silicon carbide coatings on graphite structures was conducted using a specialized specimen preparation technique. The mechanical properties of the modulus, hardness and toughness were characterized. Silicon carbide deposited at $1300^{\circ}C$ has the following values: E=316 GPa, H=29 GPa, and $K_c$=9.8 MPa $m^{1/2}$; additionally, silicon carbide deposited at $1350^{\circ}C$ shows E=283 GPa, H=23 GPa, and $K_c$=6.1 MPa $m^{1/2}$. The mechanical properties of two grades of SiC coating with different microstructures and thicknesses are discussed.

Finite element modeling of the vibrational behavior of multi-walled nested silicon-carbide and carbon nanotubes

  • Nikkar, Abed;Rouhi, Saeed;Ansari, Reza
    • Structural Engineering and Mechanics
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    • 제64권3호
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    • pp.329-337
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    • 2017
  • This study concerns the vibrational behavior of multi-walled nested silicon-carbide and carbon nanotubes using the finite element method. The beam elements are used to model the carbon-carbon and silicon-carbon bonds. Besides, spring elements are employed to simulate the van der Waals interactions between walls. The effects of nanotube arrangement, number of walls, geometrical parameters and boundary conditions on the frequencies of nested silicon-carbide and carbon nanotubes are investigated. It is shown that the double-walled nanotubes have larger frequencies than triple-walled nanotubes. Besides, replacing silicon carbide layers with carbon layers leads to increasing the frequencies of nested silicon-carbide and carbon nanotubes. Comparing the first ten mode shapes of nested nanotubes, it is observed that the mode shapes of armchair and zigzag nanotubes are almost the same.

반응소결 탄화규소에서 실리콘의 침윤향상 (Silicon Melt Infiltration of Reaction-Bonded Silicon Carbide)

  • 신현익;김주선;이종호;김긍호;송휴섭;이해원
    • 한국세라믹학회지
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    • 제39권7호
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    • pp.693-698
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    • 2002
  • 반응소결 탄화규소의 잔류 실리콘 양을 최소화하기 위해 3성분계 탄화규소 분말을 혼합하여 최밀 충전 반음소결 탄화규소를 제조하였다. 기지상의 충전밀도 증가로 인해 반응소결 중 실리콘의 불완전 침윤이 발생하였으며, 이로 인한 잔류 기공은 조대 탄화규소 입자의 표면을 따라 존재함을 확인하였다. 불완전 침윤은 승온 중 분해되지 않고 남은 산화물이 실리콘의 용융 온도 이상에서 분해되어 생긴 고립기공에 의한 것으로 확인되었다. 기지상의 표면에 존재하리라 여겨지는 산화물을 제거하기 위해 침윤전 열처리 및 부식처리를 통해 완전침윤을 달성하였다.

Effect of Specific Surface Area on the Reaction of Silicon Monoxide with Porous Carbon Fiber Composites

  • Park, Min-Jin;Lee, Jae-Chun
    • The Korean Journal of Ceramics
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    • 제4권3호
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    • pp.245-248
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    • 1998
  • Porous carbon fiber composites (CFCs) having variable specific surface area ranging 35~1150 $\m^2$/g were reacted to produce silicon carbide fiber composites with SiO vapor generated from a mixture of Si and $SiO_2$ at 1673 K for 2 h under vacuum. Part of SiO vapor generated during conversion process condensed on to the converted fiber surface as amorphous silica. Chemical analysis of the converted CFCs resulting from reaction showed that the products contained 27~90% silicon carbide, 7~18% amorphous silica and 3~63% unreacted carbon, and the composition depended on the specific carbide, 7~18% amorphous silica and 3~63% unreacted carbon, and the composition depended on the specific surface area of CFCs. CFC of higher specific surface area yielded higher degree of conversion of carbon to silicon and conversion products of lower mechanical strength due to occurrence of cracks in the converted caron fiber. As the conversion of carbon to silicon carbide proceeded, pore size of converted CFCs increased as a result of growth of silicon carbide crystallites, which is also linked to the crack formation in the converted fiber.

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