• 반도체디스플레이기술학회지
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• 제7권2호
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• pp.1-5
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• 2008

Silicide formation process and the formation sequence were investigated in this study. It was postulated that the formation of the second silicide phase involves glass formation between the first silicide phase and Si given that a thin metal film is deposited on a Si substrate. The concentration of glass was assumed to be located where the free energy of the liquid alloy with respect to the first nucleated compound and solid Si (${\Delta}$G') is most negative. It was also mentioned that the glass concentration is close to the composition of the second phase in order to achieve the maximum energy degradation. It was shown that the minimum ${\Delta}$G' concentration can be estimated by interpolating the portion of the liquidus where the liquid alloy is in equilibrium with the two solid constituents, namely the first compound phase and Si, thereby forming a hypothetical eutectic.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.611-614
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• 2005

In this paper, investigated is the relationship between the formation temperature and the thermal stability of Ni silicide formed with Ni-V (Nickel Vanadium) alloy target. The sheet resistance after the formation of Ni silicide with the Ni-V showed stable characteristic up to RTP temperature of $700\;^{\circ}C$ while degradation of sheet resistance started at that temperature in case of pure-Ni. Moreover, the Ni silicide with Ni-V indicated more thermally stable characteristic after the post-silicidation annealing. It is further found that the thermal robustness of Ni silicide with Ni-V was highly dependent on the formation temperature. With the increased silicidation temperature (around $700\;^{\circ}C$), the more thermally stable Ni silicide was formed than that of low temperature case using the Ni-V.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.219-219
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• 2010

Silicides have been commonly used in the Si technology due to the compatibility with Si. Recently the silicide has been applied in solar cells [1] and nanoscale interconnects [2]. The modulation of Ni silicide phase is an important issue to satisfy the needs. The excellent electric-conductive nickel monosilicide (NiSi) nanowire has proven the low resistive nanoscale interconnects. Otherwise the Ni disilicide (NiSi2) provides a template to grow a crystalline Si film above it by the little lattice mismatch of 0.4% between Si and NiSi2. We present the formation of Ni silicide phases performed by the single deposition and the co-deposition methods. The co-deposition of Ni and Si provides a stable Ni silicide phase at a reduced processing temperature comparing to the single deposition method. It also discusses the Schottky contact formation between the Ni silicide and the grown crystalline Si film for the solar cell application.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.434-435
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• 2009

The crystalline silicon solar cell where the solar cell market grows rapidly is occupying of about 85% or more. high-efficiency and low cost endeavors many crystalline silicon solar cells. the fabrication processes of high-efficiency crystalline silicon solar cells necessitate complicated fabrication processes and Ti/Pd/Ag contact, however, this contact formation processed by expensive materials. Ni/Cu contact formation is good alternative. in this paper, according to temperature Ni silicide makes, produced Ni/Cu contact solar cell and measured conversion efficiency.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권1호
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• pp.22-27
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• 2013

Detailed study on how the plasma process during the sidewall spacer formation suppresses the formation of silicide is done. In non-patterned wafer test, it is found that both fluorocarbon reactive ion etch (RIE) and TEOS plasma-enhanced deposition processes modify the Si surface so that the silicide reaction is chemically inhibited or suppressed. In order to investigate the cause of the chemical modification, we analyze the elements on the silicon surface through Auger Electron Spectroscopy (AES). From the AES result, it is found that the carbon induces chemical modification which blocks the reaction between silicon and nickel. Thus, protecting the surface from the carbon-containing plasma process prior to nickel deposition appears critical in successful silicide formation.

• 한국표면공학회지
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• 제30권6호
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• pp.374-381
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• 1997

We have studied the effect of the interface between tungsten silicide and polysilicon the silicide reaction. The results showed that the cleaning of the silicon surface prior to the deposition of tungsten silicide affected the interface properties, thereby leading to the difference in the resistivity and surface morhpology of tungsten silicide. Compared with HF cleaning, the use of SCl cleaning yielded higher resistivity of tungsten silicide at the low anneal temperature (up to $900^{\circ}C$). However, furtherature to $1000^{\circ}C$ reduced the resistivity significantly, similar to that obtained with HF cleaning. It was also observed that the annealing of WSix/HF-cleaned poly-si allowed the formation of bucking weve (partially decohesion area) on the surface. In contrast, the use of SCl celaning did not produce the buckling waves on the surface. Also the presence of 200$\AA$ -thick TiW between tungsten silicide and HF-cleaned poly-Si effectively prevented the formation of the waves. However, high-temperature annealing of WSix/200A-TiW/Poly-Si allowed the excess silicon in tungsten silicide to precipitate inside the silcide, causing the slight increase of the resistivity after annealing at $1050^{\circ}C$.

• 한국재료학회지
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• 제1권4호
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• pp.191-197
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• 1991

Composite $TiSi_{2.6}$ target으로 부터 Ti-silicide를 형성시 단결정 Si기판과 다결정 Si내의 dopant의 확산 거동, 그리고 Ti-silicide 박막의 표면 거칠기를 secondary ion mass spectrometry (SIMS), 4-point probe, X-선 회절 분석, 표면 거칠기 측정을 통해 조사하였다. X-선 회절 분석결과 중착된 직후의 중착막은 비정질이었고, 단결정 Si기판에 증착된 막은 $800^{\circ}C$에서 20초간 급속 열처리 시 orthorhombic $TiSi_2$(C54 구조)로 결정화가 이루어졌다. 단결정 Si 기판과 다결정 Si에서 Ti-silicide 충으로의 dopant의내부 확산은 거의 발생하지 않았으며, 주입된 불순물들은 Ti-silicide/Si 계면 근처의 단결정 Si이나 다결정 Si 내부에 존재하고 있었다. 또한 형성된 Ti-silicide 박막의 표면 거칠기는 16-22nm이었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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• pp.387-390
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• 1988

The increases in the packing density and the resulting shrinkage of silicon integrated circuit dimensions led to the investigation and successful of the deposited silicide layers as the gate and interconnection and contact metallization. In this paper evaporated Co films on n-Si have been rapid thermal annealed in $N_2$ambient at temperature of $400^{\circ}C-1000^{\circ}C$. The Co silicide formation is characterized by sheet resistance (4PP). Also, silicide growth rate and its reproductivity has been examined by SEM.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1992년도 추계학술발표강연 및 논문개요집
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• pp.62-62
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• 1992

• 한국통신학회논문지
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• 제15권5호
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• pp.399-405
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• 1990

急速 熱處理 공정을 高融點 타이타늄 실리사이드 형성을 위한 反應率의 연구와 정확한 形成 調節에 이용하였다. 試料는 n형 실리콘과 다결정 웨이퍼이며, 타이타늄을 스퍼터로 증착시켰다. 工程은 질소와 아르곤 가스 분위기 下에 실리사이드 형성을 정확하게 조절하기 위해 急速 時間 溫度 분포의 行列로 수행하였다. 반응된 박막은 面抵抗 측정과 전자현미경 사진, 自動分 抛抵抗 측정, X-선 回折 등으로 分析하였다. 結果는 실리사이드의 抵抗度는 20$\mu$$\Omega$-cm이하 이고, 박막 두께는 타이타늄 燕着 의 두께보다 약 2배로 나타났다. 실리사이드 形成 분위기는 아르곤과 窒素가 同一한 溫度 時間 조건에서 形成되었다.