• Korean Journal of Soil Science and Fertilizer
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• v.14 no.2
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• pp.76-82
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• 1981

A water culture experiment was carried out to elucidate the relationship between the nutritional conditions emphasized on $SiO_2$ of rice plant with the growth stages and rice blast incidence. Two rice cultivars, Milyang 23 and Nakdongbyeo were tested under the two Nitrogen levels and $SiO_2$ applications at the different growth stages. The results obtained were as follows. 1. By silicate application, the incidence of rice blast disease was remarkably reduced possibly due to increase of silicate and decrease of nitrogen contents in rice plant. 2. Silicate application at the late growth stage also reduced infected ratio of neck blast. 3. The effect of silicate on reducing the incidence of rice blast disease was clearer in neck blast than in leaf blast.

• Korean Journal of Soil Science and Fertilizer
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• v.44 no.6
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• pp.1016-1022
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• 2011

Application of silicate fertilizers is typically practiced with several year's interval to amend soil quality and improve rice productivity at the paddy field in Korea. Most of silicate fertilizers applied in Korea is slag-originated silicate fertilizer. Some water soluble silicate fertilizers are manufactured and commercially available. The objective of this study was to assess changes of soil chemical properties in paddy field by applying slag-originated silicate fertilizer and water soluble silicate fertilizer. Field experiment was conducted on a silt loam paddy soil, where four levels of each silicate fertilizer were applied in soil at the rate of 0, 1, 2, 4 times of the recommended levels. Application of slag-originated silicate fertilizer increased soil pH, while no significant pH increase occurred with the treatment of water soluble silicate fertilizers. Soil pH increased 0.4~0.5 with the 1 time of recommended level of slag-originated silicate fertilizer. Available $SiO_2$ contents also significantly increased with the treatment of slag-originated silicate fertilizer at 15 and 35 days after treatment, while decreased after 60 days after treatment possibly due to rice uptake. Exchangeable Ca, Mg and available phosphate contents in soil increased with application of slag-originated silicate fertilizer, while a little increases for them were shown with the application of soluble silicate fertilizer. $SiO_2$/N ratios in rice straw for 1 time of recommended level of slag-originated silicate fertilizer was 11.5, while that of control was 8.4, which was much lower value. Throughout this study, soil application of slag-originated silicate fertilizer enhanced soil chemical properties, while water soluble silicate fertilizer application in soil needs further study resulting in a little effects on soil property.

• Journal of Korea Foundry Society
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• v.5 no.4
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• pp.271-282
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• 1985

In order to investigate the mold reaction characteristics of Mn steel and Cr steel castings individually, the mold reaction products were examined by scanning electron microscopy, electron prove microanalyzer and X-ray diffractometer. From this experiment, the results were summarized as follows: 1) The mold reaction depth increased with increase of Mn content, while it decreased with increase of Cr content. 2) Mold reaction depth decreased with Mn content at $1200^{\circ}C$. 3) Mn, among the reaction products, forms a low fusion silicate, Mn $O.SiO_2$ while Cr forms a stable oxide, $CrO_3$ which hindering the reaction between FeO and $SiO_2$ thus the formation of $FeO.SiO_2$ was depressed.

• Korean Journal of Soil Science and Fertilizer
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• v.39 no.1
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• pp.8-14
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• 2006

High phosphate accumulations in greenhouse soils have been considered as a new agricultural problem in Korea. The effects of silicate on changes in phosphate fractions and on the yield of Chinese cabbage without P fertilization were investigated by pot experiment. For this experiment, P-accumulated soil was selected (Total-P; $2140mg\;kg^{-1}$). Three levels of silicate (0, 2, and $4Mg\;ha^{-1}$) without P fertilization and P fertilizer without silicate application (Si0+NPK) were applied in 1/2000a pots. The same amount of nitrogen and potassium fertilizers were applied to the all pots. The application of $4Mg\;ha^{-1}$ of silicate greatly increased the yield of Chinese cabbage by 25% compared to Si0+NPK treatment. Although there is no significant difference in plant P absorption among all the treatments, the uptake of P in the $4Mg\;ha^{-1}$ silicate application was significantly higher than Si0+NPK treatment due to increase in yield. The content of available $SiO_2$ in soil increased with increasing silicate application rates. The Si concentration of plant showed a positive correlation with available $SiO_2$ contents in soil and the yield of Chinese cabbage. Total P greatly decreased with increasing rates of silicate application, yet the change in available P content was not significant. The Si0+NPK treatment increased the content of Ca-P by 11%, however, which was decreased by 27% in the $4Mg\;ha^{-1}$ silicate application. Therefore, the effect of silicate on reducing total-P was mainly attributed to the change in concentration of Ca-P. Our results suggest that the application of silicate in P-accumulated soils not only increase the crops yield but also reduces phosphate accumulation.

• Journal of the Korean Ceramic Society
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• v.38 no.12
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• pp.1132-1136
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• 2001

A silicon-substituted hydroxyapatite was prepared using tetraethylorthosilicate as a silicon source to obtain a biomaterial having an improved biocompatibility. From the XRD analysis, it was confirmed that a single-phase hydroxyapatite containing silicon was formed without revealing the presence of extra phases related to silicon oxide or other calcium phosphate species. Silicon content was up to 3.32% by weight. Through $\^$29/Si MAS NMR investigation we could confirm the presence of tetrahedral silicate in the framework of hydroxyapatite structure. Substitution of silicon into the hydroxyapatite framework (Ca$\_$10/(PO$_4$)$\_$6-x/(SiO$_4$)$\_$x/(OH)$\_$2-x/ reduced the amount of hydroxyl group to compensate for the extra negative charge of the silicate group, which is confirmed by FT-IR.

• Journal of the Korean Ceramic Society
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• v.52 no.3
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• pp.197-203
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• 2015

The colorization of $Zn_2SiO_4$ crystal glazes was investigated by adding nucleating seeds with various coloring agents. The addition of color fixing agents such as $Fe_2O_3$, $MnO_2$, and NiO with seeds caused changes in the colors of glazes. The crystallinity and crystal size were dependent on glaze composition and firing schedules. By controlling coloring agents and firing schedules, it was possible to create various colors and sizes of crystals in a zinc-based crystalline glaze.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.138-138
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• 2017

차세대 CMOS 소자의 지속적인 고직접화를 위해서는 높은 gate capacitance와 낮은 gate leakage current를 확보를 위한, 적절한 metal gate electrode와 high-k dielectric 물질의 개발이 필수적으로 요구된다. 특히, gate dielectric으로 적용하기 위한 다양한 high-k dielectric 물질 후보군 중에서, 높은 dielectric constant와, 낮은 leakage current, 그리고 Si과의 우수한 열적 안정성을 가지는 Zr silicates 또는 Hf silicates(ZrSiO4와 HfSiO4) 물질이 높은 관심을 받고 있으며, 이를 원자층 증착법을 통해 구현하기 위한 노력들이 있어왔다. 그러나, 현재까지 보고된 원자층 증착법을 이용한 Zr silicates 및 Hf silicates 공정의 경우, 개별적인 Zr(또는 Hf)과 Si precursor를 이용하여 ZrO2(또는 HfO2)과 SiO2를 반복적으로 증착하는 방식으로 Zr silicates 또는 Hf silicates를 형성하고 있어, 전체 공정이 매우 복잡해지는 문제점 뿐 아니라, gate dielectric 내에서 Zr과 Si의 국부적인 조성 불균일성을 야기하여, 제작된 소자의 신뢰성을 떨어뜨리는 문제점을 나타내왔다. 따라서, 본 연구에서는 이러한 문제점을 개선하기 위하여, 하나의 precursor에 Zr (또는 Hf)과 Si 원소를 동시에 가지고 있는 DNS-Zr과 DNS-Hf bimetallic precursor를 이용하여 새로운 ZrSiO4와 HfSiO4 ALD 공정을 개발하고, 그 특성을 살펴보고자 하였다. H2O와 O3을 reactant로 사용한 원자층 증착법 공정을 통하여, Zr:Si 또는 Hf:Si의 화학양론적 비율이 항상 일정한 ZrSiO4와 HfSiO4 박막을 형성할 수 있었으며, 이들의 전기적 특성 평가를 진행하였으며, dielectric constant 및 leakage current 측면에서 우수한 특성을 나타냄을 확인할 수 있었다. 이러한 결과를 바탕으로, bimetallic 전구체를 이용한 ALD 공정은 차세대 고성능 논리회로의 게이트 유전물질에 응용이 가능할 것으로 판단된다.

• Journal of Electrochemical Science and Technology
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• v.3 no.2
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• pp.72-79
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• 2012

$Li_2MnSiO_4$ was synthesized using the solid-state method under an Ar atmosphere at three different calcination temperatures (900, 950, and $1000^{\circ}C$). The optimization of the carbon coating was also carried out using various molar concentrations of adipic acid as the carbon source. The XRD pattern confirmed that the resulting $Li_2MnSiO_4$ particles exhibited an orthorhombic structure with a $Pmn2_1$ space group. Cyclic voltammetry was utilized to investigate the capacitive behavior of $Li_2MnSiO_4$ along with activated carbon (AC) in a hybrid supercapacitor with a two-electrode cell configuration. The $Li_2MnSiO_4$/AC cell exhibited a high discharge capacitance and energy density of $43.2Fg^{-1}$ and $54Whkg^{-1}$, respectively, at $1.0mAcm^{-2}$. The $Li_2MnSiO_4$/AC hybrid supercapacitor exhibited an excellent cycling stability over 1000 measured cycles with coulombic efficiency over > 99 %. Electrochemical impedance spectroscopy was conducted to corroborate the results that were obtained and described.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.341-345
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• 2001

In this study, nano-sized powders of $Si0_2-0^{\sim}15mol%B_2O_3$ composition were prepared by sol-gel processing method using TEOS(Tetra ethyl ortho silicate) and $H_3BO_3$ solution. The powders were tape-cast on High silicate glass sheet(HSG) substrate and sintered to form a layer of undercladding for the planar light wave module, During the sol-gel processing, $H_2O/Si$ mole ratio were varied to modify the size of the powders in a range from 600 to 75nm. The dispersion of the powder was modified by changing the pH of the slurry. Sintering temperature of the tape was observed to decrease with the size of the powder and the $B_2O_3$ content in the powder. When the silica powders of 75-125nm in diameter containing 15mol% $B_2O_3$ were used, 98 TD% was obtained at $1250^{\circ}C$, which is approximately $300^{\circ}C$ reduction in sintering temperature compared with micrometer-sized powders.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.62.2-62
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• 2003

Material Characteristics of zirconium oxide thin films obtained by plasma enhanced chemical vapor deposition on p-type Si(100) substrates were investigated to explain their unable electrical properties. The films obtained without heating had polycrystalline nanograins that are mostly of a tetragonal phase under oxygen-deficient plasma conditions but transformed into a monoclinic phase with increasing $O_2$ addition in the plasma. Mostly amorphous bulk $ZrO_2$ with a relatively thicker and smoother interfacial layer was obtained from oxygen-rich plasmas, resulting in a decrease in both the overall dielectric constant and the leakage current density. the interfacial layer formed between the bulk $ZrO_2$ and Si substrate was analyzed to be zirconium silicate, which approached $SiO_2$ as its zirconium content decreased with the increasing gas phase $O_2$ content.