• 한국초전도ㆍ저온공학회논문지
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• 제5권2호
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• pp.41-45
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• 2003

Resistance distribution in thin film type SFCL elements of different shunt layer thickness was investigated. The 300 nm thick film of 2 inch diameter was coated with a gold layer and patterned into 2 mm wide meander lines. The shunt layer thickness was varied by ion milling the shunt layer with Ar ions, and also by having the shunt layer grown in different thickness. The SFCL element was subjected to simulated AC fault current for measurements. It was immersed in liquid nitrogenduring the experiment. The resistance distribution was not affected by the shunt layer thickness at applied voltages that brought the temperature of the elements to similar values. This result could be explained with the concept of heat transfer from the film to the surroundings. The resistance distribution was independent of the shunt layer thickness because thick sapphire substrates of high thermal conductivity dominated the thermal conductance of the elements.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 학술대회 논문집
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• pp.51-54
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• 2003

We investigated the quench characteristics of thin film type SFCLs with shunt layers of various thickness. The SFCLs ware based on 2 inch diameter YBa$_2$Cu$_3$O$_{7}$ thin films coated in-situ with a gold shunt layer. The shunt layer thickness was varied by Ar ion milling. The limiters were tested with simulated fault currents at various source voltages. The thinner the shunt layer was, the slower was the rise of SFCL temperatures. This means SFCLs of thinner shunt layers had higher voltage ratings. The voltage rating was approximately inversely proportional to the square root of the shunt layer thickness. This result could be understood through the concept of heat balance.e.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 학술대회 논문집
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• pp.242-245
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• 2003

We investigated the quench characteristics of thin film type SFCLs with shunt layers of various thickness. The SFCLs ware based on 2 inch diameter YBa$_2$Cu$_3$3O$_{7}$ thin films coated in-situ with a gold shunt layer. The shunt layer thickness was varied by Ar ion milling. The limiters were tested with simulated fault currents at various source voltages. The thinner the shunt layer was, the slower was the rise of SFCL temperatures. This means SFCLs of thinner shunt layers had higher voltage ratings. The voltage rating was approximately inversely proportional to the square root of the shunt layer thickness. This result could be understood through the concept of heat balance.e.

• 한국초전도ㆍ저온공학회논문지
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• 제1권2호
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• pp.49-53
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• 1999

We fabricated a resistive superconducting fault current limiter (SFCL) with a shunt resistor in order to bypass the transient current at faults. The SFCL consists of a YBCO films coated with an Au layer (10$\Omega$ at room temperature). which is to disperse the heat generated at hot spots in the YBCO films, and a 5$\Omega$ shunt resistor. The minimum quench current of the SFCL was found to be 12.2Apeak. This SFCL successfully controlled the fault current to below 23 Apeak. Which is otherwise to increase up to 103 Apeak. With the shunt resistor, the temperature of the SFCL rose the temperature of the SFCL rose three times slower than without the shunt, whereby the SFCL is protected at high currents.

• Journal of Korean Neurosurgical Society
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• 제62권1호
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• pp.123-129
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• 2019

Objective : Ventriculoperitoneal (VP) shunt surgery is a common and effective treatment for hydrocephalus and cerebrospinal fluid disorders. Infection remains a major cause of morbidity and mortality after a VP shunt. There is evidence that a deep skin flora microbiome may have a role to play in post-operative infections. In this technical note, we present a skin preparation technique that addresses the issue of the skin flora beyond the initial incision. Methods : The patient is initially prepped, as standard, with. a single layer of 2% CHG+70% isopropyl alcohol. The novel stage is the 'double incision' whereby an initial superficial incision receives a further application of povidone-iodine prior to completing the full depth incision. Results : Of the 84 shunts inserted using the double-incision method (September 2015 to September 2016), only one developed a shunt infection. Conclusion : The double incision approach to skin preparation is a unique operative stage in VP shunt surgery that may have a role to play in reducing acute shunt infection.

• 한국소음진동공학회논문집
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• 제13권8호
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• pp.651-657
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• 2003

A new mechanical-electrical hybrid passive damping treatment is proposed to improve the performance of structural vibration control. The proposed hybrid passive damping system consists of a constrained layer damping treatment and a shunt circuit. In a passive mechanical constrained layer damping, a viscoelastic material damping layer is used to control the structural vibration modes in high frequency range. The passive electrical damping is designed for targeting the nitration amplitude in the low frequency range. The governing equations of motion are derived through the Hamilton's principle. The obtained mathematical model Is validated experimentally. The presented theoretical and experimental techniques provide invaluable tools for controlling the multiple modes of a vibrating structure over a wide frequency band.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2003년도 춘계학술대회논문집
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• pp.362-367
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• 2003

A new mechanical-electrical hybrid passive dam ping treatment is proposed to improve the performance of structural vibration control. The proposed hybrid passive damping system consists of a constrained layer damping treatment and a shunt circuit. In a passive mechanical constrained layer damping, a viscoelastic material damping layer is used to control the structural vibration modes in high frequency range. The passive electrical damping is designed for targeting the vibration amplitude in the low frequency range. The governing equations of motion are derived through the Hamilton's principle. The obtained mathematical model is validated experimentally. The presented theoretical and experimental techniques provide invaluable tools for controlling the multiple modes of a vibrating structure over a wide frequency band.

• Journal of Chest Surgery
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• 제29권8호
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• pp.836-843
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• 1996

본 연세대학교 의과대학 흉부외과학 교실에서는 1985년 부터 1992년까지 청색성 선천성 심장기형환자에서 시행한 체 폐동맥 단락술에 사용되 었던 PTFE (polytetrafluoroethylene) 인조 혈관을 재수술시 절 제하여 꽝학 현미경 및 전자 현미경으로 관찰하였다. 체폐 동맥 단락술의 종류는 Blalock-Taussig형 10 례. Waterstone-Cooley형 1례, Pott 형 1례등이었다. 사용된 PTFE 인조 혈관의 크기는 5mm가 10개, 4mm가 1개, 6mm가 1개였다 이들의 평균 사용 시간은 31개월(12개월에서 55개월)이었다. 10개월에서 20개월사이의 PTFE 인조 혈관은 틈새에 매우 많은 혈소판이 끼어 있었고 내막 비후가 관찰되었다. 40 개월이상 기능을 하는 PTFE 인조 혈관에서는 혈관 내피 세포가 광학 및 전자 현미경으로 관찰되었다. 막힌 PTFE 인조 혈관의 내면은 매우 심한 내막 비후와 혈전으로 차 있었다. 이와 같은 우리의 경험을 토대로 PTFE인조 혈관과 자신의 혈관이 연결되는 부위에 결체조직이 잘붙어 혈관내피세포가 덮을수 있게 된다면 혈소판의 응집을 막아 오랫동안 기능을 유지할 수 있을 것으로 생각된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 기술교육전문연구회
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• pp.16-19
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• 2003

YBCO film을 이용하여 2 stripe-meander 형태의 초전도 한류기를 제작하고 시험하였다. 초전도 film의 hot spot에 의해 발생하는 열을 분산시키기 위해 gold shunt layer를 입혔다. 사고각 $0^{\circ}$에서 사고발생 후 최초 quench 전류값은 $9.56A_{peak}$이었고 약 0.63 msec동안 fast quench 가 진행되고 이후에는 gold층의 열발생에 의한 저항증가가 약 3주기동안 진행된 후 안정되었다. 사고각 $45^{\circ}$와 $90^{\circ}$ 에서는 전류가 상승하는 도중 혹은 최고지점에서 사고가 발생했기 때문에 fast quench time이 각각 0.56 msec와 0.26msec를 보였다. 초전도 한류기를 적용하였을 때 사고전류는 사고직후 약 5배, 3주기후에는 약 8.5배까지 효과적으로 제한함을 알 수 있었다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2000년도 춘계학술대회 논문집
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• pp.1051-1054
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• 2000

We developed the micro CSF (celebrospinal fluid) shunt valve with surface and bulk micromachining technology in polymer MEMS. This micro CSF shunt valve was formed with four micro check valves to have a membrane connected to the anchor with the four bridges. The up-down movement of the membrane made the CSF on & off and the valve characteristic such as open pressure was controlled by the thickness and shape of the bridge and the membrane. The membrane, anchor and bridge layer were made of the $O_2$ RIE (reactive ion etching) patterned Parylene thin film to be about 5~10 microns in thickness on the silicon wafer. The dimension of the rectangular nozzle is 0.2＊0.2 $\textrm{mm}^2$ and the membrane 0.45 mm in diameter. The bridge width is designed variously from 0.04 mm to 0.12 mm to control the valve characteristics. To protect the membrane and bridge in the CSF flow, we developed the packaging system for the CSF micro shunt valve with the deep RIE of the silicon wafer. Using this package, we can control the gap size between the membrane and the nozzle, and protect the bridge not to be broken in the flow. The total dimension of the assembled system is 2.5＊2.5 $\textrm{mm}^2$ in square, 0.8 mm in height. We could precisely control the burst pressure and low rate of the valve varing the design parameters, and develop the whole CSF shunt system using this polymer MEMS fabricated CSF shunt valve.