• Nuclear Engineering and Technology
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• v.51 no.8
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• pp.1978-1982
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• 2019

The paper presents the electrical performance measurements of a prototype nuclear battery and two types of betavoltaic cells. The electrical performance was assessed by measuring current-voltage properties (I-V) and determining the short-circuit current and the open-circuit voltage. With ⁶³Ni as an irradiation source, the open-circuit voltage and the short-circuit current were determined as 1 V and 64 nA, respectively. The prototype consisted of 10 betavoltaic cells that were prepared using radioactive ⁶³Ni. Electroplating of the radioactive ⁶³Ni on an ohmic contact (Ti-Ni) was carried out at a current density of 20 mA/㎠. Two types of betavoltaic cells were studied: with an external ⁶³Ni source and a ⁶³Ni-covered source. Under irradiation of the ⁶³Ni source with an activity of 10 mCi, the open-circuit voltage V_oc of the fabricated cells reached 151 mV and 109 mV; the short-circuit current density J_sc was measured to be 72.9 nA/cm2 and 64.6 nA/㎠, respectively. The betavoltaic cells had the fill factor of 55% and 50%, respectively.

• Journal of Welding and Joining
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• v.19 no.6
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• pp.630-635
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• 2001

The characteristics of spatter generation in the short circuit transfer region of $CO_2$ welding was investigated. Spatteriing phenomena could be classified into three types : Type I generated due to the abrupt increase of arc voltage in arcing duration. Type II by the gas ejection from molten metal and Type III generated by the arc instability at the moment of arc re-ignition just after short circuiting. Main observed types were dependent on the chemical composition of welding wires. The case of YCW12 wires was mainly composed of spatters generated by Type l and Type II, while most, spatters in YCW11 wires were generated by Type II and Type III.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2005.06a
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• pp.304-309
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• 2005

This paper presents an electronic ballast using a step down converter, a low frequency inverter for high intensity short-arc discharge lamp. The proposed ballast is composed of a full-wave rectifier, a step down converter operated as a current source with power regulation and a low frequency inverter with external ignition circuit. The ignition circuit generates high voltage pulse of $3{\sim}5[kV]$ peak, 130[Hz] periodically. Moreover, it is able to reignite at regular intervals by protective circuit. As experimental results on the test, acoustic resonance phenomenon is eliminated by operating the low frequency square wave voltage and current. Lamp voltage, current and consumption power are measured 123.8[V], 8.1[A] and 1,002[W], respectively. It was confirmed that the designed ballast operate the lamp with a constant power.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.913-914
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• 2007

Power transformer shall be designed and constructed to withstand the mechanical and thermal stresses produced by external short circuits which include three-phase, single line to ground, double line-to-ground, and line-to-line faults on any one set terminals at a time. This paper presents the method of short-circuit test and means of evaluation during and after each test to judge the results of short-circuit tests.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.05a
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• pp.288-292
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• 2002

We propose the new type of on-chip ESD protection method for RF applications. By using the properties of RF circuits, we can use the short-circuited stub as ESD protection device in front of the DC blocking capacitor Specially, we can use short-circuited stub as the portion of the matching circuit so to reduce the and various parameters of the transmission line. This new type ESD protection method is very different from the conventional ESD protection method. With the new type ESD protection method, we remove the parasitic capacitance of ESD protection device which degrade the performance of core circuit.

• Journal of Power Electronics
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• v.16 no.1
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• pp.362-373
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• 2016

The on-line measurement of high-power IGBT collector current is important for the hierarchical control and short-circuit and overcurrent protection of its driver and the sensorless control of the converter. The conventional on-line measurement methods for IGBT collector current are not suitable for engineering measurement due to their large-size, high-cost, low-efficiency sensors, current transformers or dividers, etc. Based on the gate driver, this paper has proposed a current measuring circuit for IGBT collector current. The circuit is used to conduct non-intervention on-line measurement of IGBT collector current by detecting the voltage drop of the IGBT power emitter and the auxiliary emitter terminals. A theoretical analysis verifies the feasibility of this circuit. The circuit adopts an operational amplifier for impedance isolation to prevent the measuring circuit from affecting the dynamic performance of the IGBT. Due to using the scheme for integration first and amplification afterwards, the difficult problem of achieving high accuracy in the transient-state and on-state measurement of the voltage between the terminals of IGBT power emitter and the auxiliary emitter (u_Ee) has been solved. This is impossible for a conventional detector. On this basis, the adoption of a two-stage operational amplifier can better meet the requirements of high bandwidth measurement under the conditions of a small signal with a large gain. Finally, various experiments have been carried out under the conditions of several typical loads (resistance-inductance load, resistance load and inductance load), different IGBT junction temperatures, soft short-circuits and hard short-circuits for the on-line measurement of IGBT collector current. This is aided by the capacitor voltage which is the integration result of the voltage uEe. The results show that the proposed method of measuring IGBT collector current is feasible and effective.

• Proceedings of the KWS Conference
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• 2001.10a
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• pp.33-36
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• 2001

• The Korean Journal of Pharmacology
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• v.20 no.1 s.34
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• pp.23-32
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• 1984

The effects of morphine on the transmembrane potential and the short circuit current in the isolated frog skin were studied under different experimental conditions. The measurem ents of the transmembrane potential and the short circuit current were carried out according to Ussing and Zerahn's method. Experimental results were summerized as follows: 1) $5{\pm}10^{-3}$M of morphine markedly depressed the transmembrane potential and the short circuit current of the naive preparation. The peak of these inhibitory effects of morphine was observed about 1 hour after administration of the drug. 2) However $10^{-4}$M of naloxone did not affect these effects of morphine. 3) Decrease of $K^+$, increase of $K^+$ or $Ca^{2+}$ in the perfusate, markedly potentiated the inhibitory action of morphine on both transmembrane potential and short circuit current of the frog skin, and addition of $Mn^{2+}$ to the solution depressed the effect of morphine on the transmembrane potential, while the inhibitory effect of morphine on the short circuit current was diminished in the $Ca^{2+}$-free ringer solution, and increase of $Mg^{2+}$ concentration depressed those effect of morphine on both electrical parameters. 4) In the morphine treated preparations, transmembrane potential and short circuit current were decreased in the early phase of drug treatment ($1{\sim}2$ days), but gradually increased to the significantly high level from the control (48 days after treatment). In these preparations, the effects of morphine on both electrical parameters were also potentiated in the early phase, but markedly diminished in the late phase of treatment. From the above results, it is postulated that the pharmacological actions of morphine as well as development of the tolerance by morphine may be partially related to the changes of ion fluxes and/or permeabilities of skin by the drug.

• Journal of Biosystems Engineering
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• v.37 no.1
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• pp.11-18
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• 2012

Purpose: Short-circuit current of a solar module that is widely used as a power source for wireless environmental sensors is proportional to solar radiation although there are a lot of factors affecting the short-circuit current. The objective of this study is to develop a model for estimating solar radiation for using the solar module as a power source and an irradiance sensor. Methods: An experiment system collected data on the short-circuit current and environmental factors (ambient temperature, cloud cover and solar radiation) during 65 days. Based on these data, two linear regression models and a non-linear regression model were developed and evaluated. Results: The best model was a linear regression model with short-circuit current, angle of incidence and cloud cover and its overall RMSE(Root Means Square Error) was 66.671 $W/m^2$. The other linear model (RMSE 69.038 $W/m^2$) was also acceptable when the cloud cover data is not available.

• Fire Science and Engineering
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• v.18 no.4
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• pp.72-77
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• 2004

In this paper, we studied on the short-circuit process, surface structure, and component variation of vinyl cords. In the results of high speed imaging system (HSIS) analysis, as soon as wire covering was damaged by heat, the conductor of wire came in contact with the other conduct of wire, and the short-circuit occurred. Stereomicroscope and SEM analysis indicated that the source part of wire showed V-type form. The molten beads of load part were bigger than those of source part. In the results of EDX analysis, Cu and O were detected in the source part, whereas covering material (Cl, Ca), Cu and O were detected in the load part. The results will help us to find out the cause of electrical fire.