• Journal of IKEEE
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• v.11 no.4
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• pp.152-157
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• 2007

AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated and the effect of ${N_2}O$ plasma on the electrical characteristics of the devices was investigated. The HEMT exposed to ${N_2}O$ plasma formed by 40 W of RF power in a chamber with pressure of 20 mTorr at a temperature of $200^{\circ}C$, exhibited a reduction of gate leakage current from 246 nA to 1.2 pA by 10 seconds treatment. The current between the two isolated active regions reduced from 3 uA to 7 nA and the sheet resistance of the active layer was lowered also. The variations of electrical characteristics for HEMT were occurred within a short time expose of 10 seconds and the successive expose did not influence on the improvements of gate leakage characteristics and conductivity of the active region. The reduced leakage current level was not varied by successive $SiO_2$ deposition and its removal. The transconductnace and drain current of AlGaN/GaN HEMTs were increased also by the expose to the ${N_2}O$ plasma.

• Korean Journal of Materials Research
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• v.8 no.12
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• pp.1182-1189
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• 1998

High quality $TiN/TiSi_2$-bilayers were formed on the Si(100) substrate at room temperature and at $600^{\circ}C$ first by coevaporation of stoichiometric Si and Ti(Si:Ti = 2:1) fellowed by Ti reactive deposition in N, gas ambient, and in situ annealing in ultrahigh vacuum. Stoichiometric $Ti_{0.}N_{0.5}$, films with (111) texture and $C54-TiSi_2$ films were grown by annealing at temperatures above $700^{\circ}C$. $TiN/C54-TiSi_2$/Si(100) interface was clear and flat without agglomoration, and $CS4-TiSi_2$ film was epitxailly grown. The sheet resistance of the $TiN/TiSi_2$- bilayer decreased as the annealing temperature increased and about $2.5\omega/\textrm{cm}^2$ was obtained from the sample annealed over $700^{\circ}C$.

• Solar Energy
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• v.11 no.3
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• pp.74-83
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• 1991

In this study, the (p)ZnTe/(n)Si solar cell and (n)CdS-(p)ZnTe/(n)Si poly-junction thin film are fabricated by vaccum deposition method at the substrate temperature of $200{\pm}1^{\circ}C$ and then their electrical properties are investigated and compared each other. The test results from the (p)ZnTe/(n)Si solar cell the (n)CdS-(p)ZnTe/(n)Si poly-junction thin fiim under the irradiation of solar energy $100[mW/cm^2]$ are as follows; Short circuit current$[mA/cm^2]$ (p)ZnTe/(n)Si:28 (n)CdS-(p)ZnTe/(n)Si:6.5 Open circuit voltage[mV] (p)ZnTe/(n)Si:450 (n)CdS-(p)ZnTe/(n)Si:250 Fill factor (p)ZnTe/(n)Si:0.65 (n)CdS-(p)ZnTe/(n)Si:0.27 Efficiency[%] (p)ZnTe/(n)Si:8.19 (n)CdS-(p)ZnTe/(n)Si:2.3 The thin film characteristics can be improved by annealing. But the (p)ZnTe/(n)Si solar cell are deteriorated at temperatures above $470^{\circ}C$ for annealing time longer than 15[min] and the (n)CdS-(p)ZnTe/(n)Si thin film are deteriorated at temperature about $580^{\circ}C$ for longer than 15[min]. It is found that the sheet resistance decreases with the increase of annealing temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.130.2-130.2
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• 2013

Today, chemical vapor deposition (CVD) of hydrocarbon gases has been demonstrated as an attractive method to synthesize large-area graphene layers. However, special care should be taken to precisely control the resulting graphene layers in CVD due to its sensitivity to various process parameters. Therefore, a facile synthesis to grow graphene layers with high controllability will have great advantages for scalable practical applications. In order to simplify and create efficiency in graphene synthesis, the graphene growth by thermal annealing process has been discussed by several groups. However, the study on growth mechanism and the detailed structural and optoelectronic properties in the resulting graphene films have not been reported yet, which will be of particular interest to explore for the practical application of graphene. In this study, we report the growth of few-layer, large-area graphene films using rapid thermal annealing (RTA) without the use of intentional carbon-containing precursor. The instability of nickel films in air facilitates the spontaneous formation of ultrathin (<2~3 nm) carbon- and oxygen-containing compounds on a nickel surface and high-temperature annealing of the nickel samples results in the formation of few-layer graphene films with high crystallinity. From annealing temperature and ambient studies during RTA, it was found that the evaporation of oxygen atoms from the surface is the dominant factor affecting the formation of graphene films. The thickness of the graphene layers is strongly dependent on the RTA temperature and time and the resulting films have a limited thickness less than 2 nm even for an extended RTA time. The transferred films have a low sheet resistance of ~380 ${\Omega}/sq$, with ~93% optical transparency. This simple and potentially inexpensive method of synthesizing novel 2-dimensional carbon films offers a wide choice of graphene films for various potential applications.

• Proceedings of the Plant Resources Society of Korea Conference
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• 2019.04a
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• pp.64-64
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• 2019

In order to evaluate the taxonomical relevance of seeds morphological characteristics, a macroand micro-morphological study was conducted on seeds of Korean Vicia (Fabacea). We collected 19 taxa of genus Vicia distributed in Korea and introduced one taxa from USDA. The morphological characteristic and testa texture of seeds were investigated using a Stereo-microscope (SM) and Scanning Electron Microscope (SEM). Most of Vicia seeds were found spherical or oblong and some seeds were oval and subglose. The largest seed was V. chosenensis ($4.3{\times}3.6{\times}2.6mm$), and the smallest was V. teterasperma ($1.7{\times}1.7{\times}1.5mm$). V. chosenensis and V. hirsuta were separated from other Vicia species by having a shiny in seed finish. In hilum shape, 14 species have linear and V. sepium was distinguished by having a circumlinear. In testa texture, they developed papilae, only V. hirsuta has lophate in level type. Deposition of the sheet-like debris between the papilae was observed in V. chosenensis, V. cracca, and V. unijuga. Polymorphism information content (PIC) values of the 13 qualitative morphological characters (QMC) were in the range of 0.0950 to 8863 with an average of 0.4611. PIC value of seed shape, seed colour, hilum colour were 0.7403, 0.8177, 0.883 respectively. Cluster analysis based on QMC detected three main clades. V. cracca, V. amurensis, V. amoena were involved in Group 1 and V. unijuga f. minor, V. unijuga, V. unijuga f. angustifolia, V. sepium, V. hirticalycina, V. hirsuta, V. linearfolia, V. chosenensis, V. pseudorobus, V. venosa var. cuspidata were involved in Group 2. V. nipponica, V. japonica, V. villosa, V. dasicarpa, V. bungei, V. angustifolia, V. tetrasperma were clustered in Group 3. Our research suggests that morphological characteristic and testa texture of seeds could be used as definers for the identification of genus Vicia.

• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.3
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• pp.443-450
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• 2021

After selecting a PES substrate with excellent thermal stability and optical properties among plastic substrates, a SiO₂ thin film was deposited as a buffer layer to a thickness of 20nm by plasma-enhanced chemical vapor deposition to compensate for the high moisture absorption. Then, the ITZO thin film was deposited by a RF magnetron sputtering method to investigate electrical and optical properties according to RF power. The ITZO thin film deposited at 50W showed the best electrical properties such as a resistivity of 8.02×10^-4 Ω-cm and a sheet resistance of 50.13Ω/sq.. The average transmittance of the ITZO thin film in the visible light region(400-800nm) was relatively high as 80% or more when the RF power was 40 and 50W. Figure of Merits (Φ_TC and FOM) showed the largest values of 23.90×10^-4 Ω^-1 and 5883 Ω^-1cm^-1, respectively, in the ITZO thin film deposited at 50W.

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.528-537
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• 2008

60 nm and 20 nm thick hydrogenated amorphous silicon(a-Si:H) layers were deposited on 200 nm $SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by an e-beam evaporator. Finally, 30 nm-Ni/(60 nm and 20 nm) a-Si:H/200 nm-$SiO_2$/single-Si structures were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 40 sec. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy(FE-SEM), transmission electron microscopy(TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide from the 60 nm a-Si:H substrate showed low sheet resistance from $400^{\circ}C$ which is compatible for low temperature processing. The nickel silicide from 20 nm a-Si:H substrate showed low resistance from $300^{\circ}C$. Through HRXRD analysis, the phase transformation occurred with silicidation temperature without a-Si:H layer thickness dependence. With the result of FE-SEM and TEM, the nickel silicides from 60 nm a-Si:H substrate showed the microstructure of 60 nm-thick silicide layers with the residual silicon regime, while the ones from 20 nm a-Si:H formed 20 nm-thick uniform silicide layers. In case of SPM, the RMS value of nickel silicide layers increased as the silicidation temperature increased. Especially, the nickel silicide from 20 nm a-Si:H substrate showed the lowest RMS value of 0.75 at $300^{\circ}C$.

• Journal of the Korean earth science society
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• v.21 no.5
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• pp.563-582
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• 2000

Two Cretaceous(80-90 Ma) non-marine sedimentary basins, Namyang and Tando Basins, are distributed in the Namyang area, Hwaseonggun and in the Tando area, Ansanshi, Kyungki Province, Korea. The Namyang and Tando Basins are composed of 10 facies, which are pooped into 5 facies associations(FA). FA I consists of massive conglomerate facies, normally graded conglomerate facies and reversely graded conglomerate facies, which is interpreted to have been formed by laminated sandstone facies, massive conglomerate facies(channelized), which is thought to have been formed by sheet flow, stream flow and suspension sedimentation in an alluvial/braided plain environment. FA III consists of massive mudstone(pebbly) facies, laminated mudstone facies, massive sandstone facies and is interbedded by channel-fill conglomerate. It is interpreted to have been deposited by suspension settling during flooding and channel-fill deposition in a floodplain environment. FA IV consists of massive conglomerate facies, normally graded conglomerate facies, massive sandstone facies, normally graded sandstone facies, and laminated sandstone facies and is interbedded with mudstone facies. It is thought to have been deposited by debris flow and turbidity current in a fan-delta environment. FA V consists of massive mudstone facies, laminated mudstone facies, laminated sandstone facies and is interbedded by massive conglomerate bed. It is thought to have been formed by suspension sedimentation and low-density turbidity current in a lake. In the Namyang Basin FA I is distributed in the eastern and southern margin of the basin, FA II in the middle part of the basin as north-south tending band. and FA III in the western part. In the Tando Basin FA II is distributed in the middle part of eastern margin and in the northwestern margin, FA IV in the southwestern part, and FA V in the central part. Correlation of the facies associations shows that FA I and II in the Namyang Basin are distributed in the lower to middle part of stratigraphic sequence and FA III in the upper part of the sequence whereas FA II and IV in the Tando Basin are in the lower to middle part and FA V in the upper part of the sequence. These patterns of facies associations distribution suggest that the Namyang Basin was developed as an alluvial fan and alluvial/braided plain at first and then evolved into a floodplain whereas the Tando Basin was developed as a fan-delta and alluvial/braided plain at first and then evolved into a lake environment.