• Journal of the Korean Society for Precision Engineering
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• v.16 no.7
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• pp.210-218
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• 1999

Sheet deposition type rapid prototyping system have many advantages : high build speed, low operating cost, large part size, no phase change, no need for support generation, and forth. However, those sheet deposition type rapid prototyping system require an additional post processing to remove excessive material attached to the part. This post processing is time consuming and labor intensive. Moreover, it is difficult for those system to fabricate parts with hollow cores and internal cavities. A new sheet deposition type rapid prototyping system that minimizes the post processing is proposed. The proposed system automatically removes excessive material in a peeling-off process between two cutting processes. In this way, the proposed system can reduce the post-processing time and cost as well as the limitation of the feasible geometric shapes in the conventional sheet deposition system.

• Journal of the Korean institute of surface engineering
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• v.41 no.1
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• pp.6-11
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• 2008

An Indium Zinc Oxide(IZO) transparent conductive layer was deposited on a large size glass substrate by using magnetron dc sputtering method with varying a deposition temperature. As the deposition temperature decreased to a room temperature, the sheet resistance of IZO film increased. But this deposition temperature range is included in an applicable to a device. From a standpoint of the sheet resistance, the differences of the sheet resistance were not great and the uniformity of the layer was uniformed around 10%. Crystallization particles were shown on the surface of the layer as deposition temperature increased, but these particles were not shown on the surface of the layer as deposition temperature decreased to the room temperature. It didn't make a scrap of difference in a transmittance of varying deposition temperature. Therefore, it is concluded that IZO thin film manufactured by the room temperature deposition condition can be used as a large size transparent conductive layer of a liquid crystal display device.

• Journal of the Korean Magnetics Society
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• v.12 no.6
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• pp.224-230
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• 2002

The statistical experiment method is employed to optimize the deposition condition of Co film with DC magnetron sputtering process. The statistical treatment results showed the significance value below 0.05, low RMS error and R-sq value close to 1, which implied that our experiment and design were very reliable. We found that the sheet resistance decreased to -1.83Ω/$\square$ with the deposition temperature, increased to 11.17Ω/$\square$ with the deposition pressure, and decreased into -0.65Ω/$\square$ with the DC power. We also confirmed that the sheet resistance uniformity was mainly influenced by the deposition temperature as it decreased -4.04％ at the temperature range of 25$\^{C}$∼147$\^{C}$. Finally, we report that the optimum condition of Co film using our statistical method of design of experiment is the deposition temperature of 25$\^{C}$, the deposition pressure of 12mTorr, and the DC power of 1500W.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.394-399
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• 2000

The effects of the type and thickness of underlayer on the crystallographic texture and the sheet resistance of aluminum thin film were studied. Ti and Ti/TiN were examined as the underlayer of aluminum. Ti and TiN were prepared by ionized physical vapor deposition (I-PVD) metalorganic chemical vapor deposition (MOCVD), respectively. The texture and the sheet resistance of metal thin film stacks were investigated at various thicknesses of Ti or TiN, and the sheet resistance was measured after annealing at $400^{\circ}C$ in an nitrogen ambient. For I-PVD Ti underlayer, the excellent texture of aluminum <111> was obtained even at top of 5 nm of Ti. However, the sheet resistance of the metal stack was greatly increased after annealing due to the interdiffusion and reaction of Al and Ti. MOCVD TiN between Ti and Al could suppress the Al-Ti reaction without severe degradation of aluminum <111> texture. Excellent texture of aluminum was obtained for the MOCVD TiN thinner than 4 nm.

• Applied Chemistry for Engineering
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• v.21 no.5
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• pp.527-531
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• 2010

The optimized sheet for EMI shielding was prepared by metal power with Fe series. Then various metal powders were deposited on the sheet by PVD method. Moreover, the PVdF nanofiber membrane was used to compare the characteristic of EMI shielding efficiency of various metal powders. The electrical property was measured by the 4-point probe method. The result from EDS confirmed that the metal powder existed on the sheet. EMI shielding efficiency was analysed by EMI shielding measurement apparatus. The lowest electrical resistance, $641.95{\Omega}{wcdot}cm$, was obtained with $1000\;{\AA}$ deposition of Cu on the sheet. It was revealed that the EMI shielding efficiency increased with increase of the metal deposition thickness. The sheet deposited by Cu with $1000\;{\AA}$ showed the highest EMI shielding efficiency, 32.5 dB.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.282-282
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• 2010

결정질 태양전지는 상대적으로 고효율이 보장되며, 낮은 공정 비용 등의 이유로 널리 사용되고 있는 기술이다. 결정질 태양전지의 효율을 증가시키는 공정 방법에는 표면 구조화, 도핑 농도, 반사방지막, 금속전극 형성 등이 있다. 특히, 도핑 공정에서 도핑 농도를 변화시킬 수 있으며, 이에 의하여 면 저항값을 변화 시킬 수 있다. 본 연구에서는 결정질 태양 전지에서 도핑 농도의 조절에 의한 이상적인 sheet resistance를 얻기 위한 실험을 진행하였다. 3개의 실험 set을 두고 각각의 경우를 실험하였다. 본 연구에서는 Pre-deposition과 drive-in 방법을 사용한 doping의 2가지 step으로 실험을 진행하였다. pre-deposition의 시간 condition은 21분으로 하였다. $N_2$ 분위기에서 $O_2$와 $POCl_3$ 의 비율을 각각 100sccm, 200sccm으로 하여 실험을 진행하였다. 변수인 온도의 경우는 각각의 set에 대하여, $830^{\circ}C$, $840^{\circ}C$, $850^{\circ}C$ 로 가변하였다. pre-deposition을 끝낸 뒤, sheet resistance의 값은 각각 $75{\sim}90\;\Omega/square$, $68{\sim}75\;\Omega/square$, $56{\sim}63\;\Omega/square$의 값을 나타내었다. 도핑의 경우에는 drive-in 방법을 사용하였으며, 모든 경우에서 20분에서 $890^{\circ}C$에서 진행하였다. 최종 sheet resistance의 값은 각각의 경우 최대 $33\;\Omega/square$, $34\;\Omega/square$, $30\;\Omega/square$의 값을 나타내었다. $40{\sim}45\;\Omega/square$ 정도의 sheet resistance가 많은 연구에서 이상적인 sheet resistance로 연구되고 있다. 본 연구에서 두 번째 조건이 이상적인 sheet resistance에 가장 접근 하였음을 확인 할 수 있다.

• Applied Science and Convergence Technology
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• v.27 no.2
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• pp.38-41
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• 2018

We demonstrate the growth of a sheet-like ZnO membrane on ZnO nano rod layers. The growth process is composed of 3 steps of ZnO seed formation, ZnO nano rod growth and sheet-like ZnO membrane formation on those nano rods. To confirm the fundamental growth mechanism, the lattice structures of each step were analyzed by X-ray diffraction (XRD) and scanning electron microscope (SEM) measurement. Analysis of the relation between the texture coefficient and the surface shape of the ZnO membrane on the ZnO nano rods shows that the surface morphology of ZnO nano structures can be controlled using the temperature of the growing solution and the concentration of the chemical solution.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.15 no.6
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• pp.231-238
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• 2015

In this paper, we have studied a sheet resistance property of N- and P-type thin films deposited on ITO glass by use of RF magnetron sputtering. The N-type samples which has the deposition condition of 150W RF power, shows the highest current value, and the samples deposited for 15 minutes shows a better Ohmic contact property. As the substrate temperature, RF power and deposition time are increased, the sheet resistance of the samples is increased, and the low sheet resistance sample shows a better I-V property. The P-type samples shows the highest current value by 150W RF power condition as similar as N-type samples. and the samples deposited for 20 minutes shows a better ohmic contact property. The sheet resistance of the both types samples is increased as increasing RF power and deposition time.

• Journal of the Korean institute of surface engineering
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• v.38 no.2
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• pp.55-59
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• 2005

ITO/Ni/ITO thin films were deposited on the PET by RF magnetron sputtering. Dependance of the process parameters such as deposition pressure, positions of Ni layer, on the transmittance, reflectance and sheet resistance of ITO/Ni/ITO film were investigated. When the Ni layer is placed at the center of ITO and deposition pressure is low, ITO/Ni/ITO films showed better optical and electrical properties. At these conditions, the transmittance, reflectance and sheet resistance of the ITO film were $90\%,\;0.38\%$ and $185\Omega/\Box$ respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.429-429
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• 2012

To investigate the gettering effect of B-doped n-type monocrystalline silicon wafer, we made the p-n junction by diffusing boron into n-type monocrystalline Si substrate and then oxidized the boron doped n-type monocrystalline silicon wafer by in-situ wet and dry oxidation. After oxidation, the minority carrier lifetime was measured by using microwave photoconductance and the sheet resistance by 4-point probe, respectively. The junction depth was analyzed by Secondary Ion Mass Spectrometry (SIMS). Boron diffusion reduced the metal impurities in the bulk of silicon wafer and increased the minority carrier lifetime. In the case of wet oxidation, the sheet resistance value of ${\sim}46{\Omega}/{\Box}$ was obtained at $900^{\circ}C$, depostion time 50 min, and drive-in time 10 min. Uniformity was ~7% at $925^{\circ}C$, deposition time 30 min, and drive-in time 10 min. Finally, the minority carrier lifetime was shown to be increased from $3.3{\mu}s$ for bare wafer to $21.6{\mu}s$ for $900^{\circ}C$, deposition 40 min, and drive-in 10 min condition. In the case of dry oxidation, for the condition of 50 min deposition, 10 min drive-in, and O2 flow of 2000 SCCM, the minority carrier lifetime of 16.3us, the sheet resistance of ${\sim}48{\Omega}/{\Box}$, and uniformity of 2% were measured.