• Korean Journal of Metals and Materials
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• v.47 no.9
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• pp.580-585
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• 2009

The effects of shear speed and tip height on the high speed shear test of Sn-3.0wt.%Ag-0.5wt.%Cu ball joints were investigated. Solder balls of $450{\mu}m$ in diameter were reflowed at $245^{\circ}C$ on a FR4 PCB (Printed Circuit Board) in order to obtain a sample for the high-speed shear test. The UBM was comprised of Cu/Ni/Au, and the shear speed and tip height varied from 0.5 to 3.0 m/s, and from 10 to $135{\mu}m$, respectively. According to the experimental results, faster shear speed enhanced the shear strength of the solder joints, regardless of the tip height. The fraction of ductile (solder) fracture decreased when the shearing speed was raised from 0.5 to 3.0 m/s. With an increasing tip height from 10 to 50 and $135{\mu}m$, the fracture mode changed from pad lift to mixed (ductile and brittle) and ductile fracture, respectively, while the shearing energy also increased in the same order. The shear energy had a proportional relationship with the fraction of the solder fracture.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.1
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• pp.35-39
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• 2011

Shearing characteristics of Sn-3.0wt%Ag-0.5wt%Cu ball for standardization of high speed shear test were investigated. The solder ball of 450 ${\mu}m$ in diameter was reflowed at $245^{\circ}C$ on FR4 PCB (Printed Circuit Board) to prepare a sample for the high-speed shear test. The metal pads on the PCB were OSP (Organic Solderability Preservative, Cu pad) and ENIG (Electroless Nickel/Immersion Gold, i.e CulNi/Au). Shearing speed was varied from 0.5 to 3.0 m/s, and tip height from 10 to 135 ${\mu}m$. As experimental results, for the OSP pad, a ductile fracture increased with tip height, and it decreased with shearing speed. In the case of ENIG pad, the ductile fracture increased with the tip height. The tip height of 10 ${\mu}m$ (2% of solder ball diameter) was unsuitable since the fracture mode was mostly pad lift. Shear energy increased with increasing shearing tip height from 10 to 135 ${\mu}m$ for both of OSP and ENIG pads.

• Korean Journal of Metals and Materials
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• v.49 no.5
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• pp.411-418
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• 2011

The current study investigates the electroplating characteristics of Sn-Cu eutectic micro-bumps electroplated on a Si chip for flip chip application. Under bump metallization (UBM) layers consisting of Cr, Cu, Ni and Au sequentially from bottom to top with the aim of achieving Sn-Cu bumps $10\times10\times6$ ${\mu}m$ in size, with 20${\mu}m$ pitch. In order to determine optimal plating parameters, the polarization curve, current density and plating time were analyzed. Experimental results showed the equilibrium potential from the Sn-Cu polarization curve is -0.465 V, which is attained when Sn-Cu electro-deposition occurred. The thickness of the electroplated bumps increased with rising current density and plating time up to 20 mA/$cm^2$ and 30 min respectively. The near eutectic composition of the Sn-0.72wt%Cu bump was obtained by plating at 10 mA/$cm^2$ for 20 min, and the bump size at these conditions was $10\times10\times6$ ${\mu}m$. The shear strength of the eutectic Sn-Cu bump was 9.0 gf when the shearing tip height was 50% of the bump height.