• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 ITC-CSCC -2
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• pp.1027-1029
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• 2002

In this paper, we present the circuit topology and control scheme of single-phase dc/ac inverter based on class E dc/dc converter for automotive application. The proposed inverter consists of class E series resonant inverter and class E low dv/dt PWM synchronous rectifier with bi-directional switch.

• Journal of Power Electronics
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• 제5권4호
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• pp.257-263
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• 2005

This paper describes the development and testing results of a high density High Voltage Power Supply (HVPS) that drives microwave Traveling Wave Tubes (TWTs) of phased array transmitters for airborne EW systems. The HVPS is designed to consist of a number of modules connected in series. Among them, especially, the high-density pulse transformer module including the resonant circuit is newly designed to make the HVPS much more reliable. In addition, this paper describes the development of high voltage solid-state modulation using fast switching devices (FETs) and also represents the test results of a modulator module.

• 한국전자파학회논문지
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• 제22권9호
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• pp.904-911
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• 2011

본 논문에서는 도파관 여파기 설계에 유용한 이중 공진 구조를 제안하였다. 본 구조는 리지가 있는 원형 개구와 네 개의 팔(arm)을 갖는 사각형 도체 패치가 결합된 아이리스 형태로서 한 개의 통과 대역과 그 양쪽에 두개의 저지 대역이 동시에 나타나는 이중 공진 특성을 갖는다. 이러한 공진 특성은 LC-병렬 공진 회로와 직렬 공진 회로가 결합된 등가 회로를 통하여 잘 설명되고, 구조의 파라미터를 조정하여 쉽게 조절할 수 있다. 실제 구조는 마이크로스트립을 에칭하여 도파관의 단면에 삽입하기 쉬운 아이리스 형태로 구현되었다. WR-90 규격의 도파관 및 어댑터, VNA를 사용하여 이 공진 구조의 투과 특성을 측정하였다. 제안된 구조의 이중 공진 특성은 도파관 여파기 설계 및 스커트 특성 개선에 유용할 것으로 기대된다.

• 한국전자파학회논문지
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• 제16권2호
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• pp.167-173
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• 2005

직렬 PIN 다이오드 스위치의 격리도는 PIN 다이오드의 병렬 커패시턴스에 의해 제한을 받으며, 스위치 구동회로는 PIN 다이오드 스위치의 스위칭 속도를 제한한다. 이런 문제를 극복하기 위해, 병렬 공진 인턱턴스와 TTL 호환의 스위치 구동회로가 적용된 높은 격리도와 고속 스위칭의 PIN 다이오드 스위치를 제안하였다. 3 GHz PIN 다이오드 스위치의 측정 결과, 1 GHz의 주파수 대역폭, 1.5 dB 이내의 삽입 손실, 65 dB의 격리도, 15 dB 이상의 반사 손실 그리고 30 ns 이내의 스위칭 속도를 나타내었다. 특히, 병렬 공진 인덕턴스를 사용한 3 GHz스위치는 15 dB의 격리도 향상을 나타내었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 F
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• pp.2067-2069
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• 1998

A prototype semiconductor switch for the command resonant charging system has been developed for a line type modulator, which charges parallel pulse forming network(PFN) up to voltage of 5 kV at repetition rates of 60 Hz. A phase controlled power supply provides charging of the 4.7 ${\mu}s$ filter capacitor bank to voltage up to 5 kV. A solid state module of series stack array of sixe matched SCRs(1.6 kV, 50 A) is used as a command charging switch to initiate the resonant charging cycle. Both resistive and RC snubber network are used across each stage of the switch assembly in order to ensure proper voltage division during both steady state and transient condition. A master trigger signal is generated to trigger circuits which are transmitted through pulse transformer to each of the 6 series switch stages. A pulse transformer is required for high voltage trigger or power isolation. This paper will discuss trigger method, protection scheme, circuit simulation, and test result.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2005년도 학술대회 논문집
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• pp.377-382
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• 2005

This paper presents two new circuit topologies of DC bus lineside active edge resonant snubber assisted soft-switching PWM full-bridge DC-DC converter acceptable for either utility AC 200V-rms or AC 400V-rms input voltage source. One topology of proposed DC-DC converters is composed of a typical voltage source-fed full-bridge high frequency PWM inverter using DC busline side series power semiconductor switching devices with the aid of a parallel capacitive lossless snubber. All the active power switches in the full-bridge arms and DC busline can achieve ZCS turn-on and ZVS turn-off commutations and the total turn-off switching power losses of all active switches can be reduced for high-frequency switching action. It is proved that the more the switching frequency of full-bridge soft switching inverter increases, the more soft-switching PWM DC-DC converter with a hish frequency transformer link has remarkable advantages for its efficiency and power density as compared with the conventional hard-switching PWM inverter type DC-DC converter

• 전력전자학회논문지
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• 제25권3호
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• pp.204-212
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• 2020

In this study, device suitability analysis is performed by comparing the performance of SiC MOSFET and GaN Transistor, which are WBG power semiconductor devices in the induction heating (IH) system. WBG devices have the advantages of low conduction resistance, switching losses, and fast switching due to their excellent physical properties, which can achieve high output power and efficiency in IH systems. In this study, SiC and GaN are applied to a general half-bridge series resonant converter topology to compare the conduction loss, switching loss, reverse conduction loss, and thermal performance of the device in consideration of device characteristics and circuit conditions. On this basis, device suitability in the IH system is analyzed. A half-bridge series resonant converter prototype using the SiC and GaN of a 650-V rating is constructed to verify device suitability through performance comparison and verified through an experimental comparison of power loss and thermal performance.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2004년도 ICCAS
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• pp.238-242
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• 2004

The paper describes an automatic frequency control current-fed inverter for forging applications. The IGBT in series with diodes as its switching devices in the inverter circuit which is of full-bridge type. The operating frequency is automatically tracked to maintain a small constant leading phase angle when load parameters change. The load voltage is controlled to protect the switches. The output power can be adjusted by varying the input current from phase controlled rectifiers which is a part of current source. The system has been operated at 15-17 kHz. The output power transferred to the load is 1,595 watts. It can heat the steel work pieces with 15 mm diameter and 120 mm long from room temperature to approximately 1100 $^{\circ}C$ within 20 seconds with 0.97 leading power factor on the input side.

• 전기학회논문지
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• 제60권5호
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• pp.971-976
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• 2011

This paper proposes a test system for a valve and poles building blocks used for large scale inverters such as STATCOM, SSSC, UPFC and VSC HVDC. Power semiconductors in the valve are normally connected in series to withstand switching voltage much larger than the voltage rating of a single power semiconductor. Therefore, there is a need to verify if the dynamic voltage sharing during switching in a valve is satisfactory. In this paper, we propose a test system that provides the necessary test condition: voltage and current in the valve using resonant circuits. A test scheme for a single phase inverter consisting two poles is also proposed. The performance of the inverter pole has to be verified at the factory test, before the system is installed at the site to secure the reliability of the system. The proposed scheme makes it possible to confirm if the pole can withstand voltage and current switching condition and handle loss.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 B
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• pp.1082-1084
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• 2001

This paper presents a design techniques for an electronic ballast of HID lamps. An electronic ballast for HID lamps usually employs a high frequency resonant inverter and voltage-to-frequency converter to control the output and a half-bridge and series resonant circuit are chosen for the ballast. In this paper, the new lighting method for the stable ignition regardless of lamp types is designed. And this type of ballast has some useful functions such as surge protection, thermal protection, and dimmable function. Moreover the powerline communication skill is also used to transmit a dimming control signal.