• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.18 no.1
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• pp.47-58
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• 2018

The heterogeneous cellular network (HCN) is most significant as a key technology for future fifth generation (5G) wireless networks. The heterogeneous network considered consists of randomly macrocell base stations (MBSs) overlaid with femtocell base stations (BSs). The stochastic geometry has been shown to be a very powerful tool to model, analyze, and design networks with random topologies such as wireless ad hoc, sensor networks, and multi- tier cellular networks. The HCNs can be energy-efficiently designed by deploying various BSs belonging to different networks, which has drawn significant attention to one of the technologies for future 5G wireless networks. In this paper, we propose switching off/on systems enabling the BSs in the cellular networks to efficiently consume the power by introducing active/sleep modes, which is able to reduce the interference and power consumption in the MBSs and FBSs on an individual basis as well as improve the energy efficiency of the cellular networks. We formulate the minimization of the power onsumption for the MBSs and FBSs as well as an optimization problem to maximize the energy efficiency subject to throughput outage constraints, which can be solved the Karush Kuhn Tucker (KKT) conditions according to the femto tier BS density. We also formulate and compare the coverage probability and the energy efficiency in HCNs scenarios with and without coordinated multi-point (CoMP) to avoid coverage holes.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.157-167
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_{2}$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_{2}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_{2}$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}cm^{-3}$ and $295cm^{2}/V{\codt}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$ = 2.8382 eV - ($8.68{\circ}10^{-4}$ eV/K)$T^{2}$/(T + 155 K). The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_{2}$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $CuAlSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1-}$, $B_{1-}$, and $C_{1-}$ exciton peaks for n = 1.

• Progress in Superconductivity
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• v.7 no.1
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• pp.28-35
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• 2005

We propose a method to measure atrial arrhythmias (AA) such as atrial fibrillation (Afb) and atrial flutter (Afl) with a SQUID magnetocardiograph (MCG) system. To detect AA is one of challenging topics in MCG. As the AA generally have irregular rhythm and atrio-ventricular conduction, the MCG signal cannot be improved by QRS averaging; therefore a SQUID MCG system having a high SNR is required to measure informative atrial excitation with a single scan. In the case of Afb, diminished f waves are much smaller than normal P waves because the sources are usually located on the posterior wall of the heart. In this study, we utilize an MCG system measuring tangential field components, which is known to be more sensitive to a deeper current source. The average noise spectral density of the whole system in a magnetic shielded room was $10\;fT/{\surd}Hz(a)\;1\;Hz\;and\;5\;fT/{\surd}Hz\;(a)\;100\;Hz$. We measured the MCG signals of patients with chronic Afb and Afl. Before the AA measurement, the comparison between the measurements in supine and prone positions for P waves has been conducted and the experiment gave a result that the supine position is more suitable to measure the atrial excitation. Therefore, the AA was measured in subject's supine position. Clinical potential of AA measurement in MCG is to find an aspect of a reentry circuit and to localize the abnormal stimulation noninvasively. To give useful information about the abnormal excitation, we have developed a method, separative synthetic aperture magnetometry (sSAM). The basic idea of sSAM is to visualize current source distribution corresponding to the atrial excitation, which are separated from the ventricular excitation and the Gaussian sensor noises. By using sSAM, we localized the source of an Afl successfully.

• Korean Journal of Materials Research
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• v.15 no.6
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• pp.413-418
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• 2005

Perovskite $Pb(Ni_{1/3}Nb_{2/3})O_3-Pb(Zr,Ti)O_3[PNN-PZT]$ ceramics were synthesized by conventional ceramic processing technique. In order to modify piezoelectric properties for sensor application in this system, NiO addition was considered to provide $Ni^{+2}$ as an acceptor, which was known to occupy with B site in the structure. The effect of NiO addition up to $8\;mol\%$ on the following piezoelectric properties as well as sintering properties was investigated. When NiO added more than $1\;mol\%$, average grain size was decreased and second phase was found to form. Moreover, the second phase caused decrease in relative dielectric constant $(\varepsilon_{33}T/\varepsilon0)$, electro-mechanical coupling factor $(k_p)$, and piezoelectric charge constant $(d_{33})$, while increasing mechanical quality factor $(Q_m)$. When $1\;mol\%$ NiO was added, density, dielectric properties and piezoelectric properties were abruptly increased.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.173-181
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• 1992

Tantalum pentoxide($Ta_{2}O_{5}$) thin films on p-type (100) silicon wafer were fabricated by RF reactive sputtering. Physical properties and structure of the specimens were examined by XRD and AES. From the C-V analysis, the dielectric constant of $Ta_{2}O_{5}$ films was in the range of 10-12 in the reactive gas atmosphere in which 10% of oxygen gas is mixed. The ratio of Ta : 0 was 1 : 2 and 1 : 2.49 by AES and RBS examination, respectively. The heat-treatment at $700^{\circ}C$ in $O_{2}$ ambient led to induce crystallization. When the heat-treatment temperature was $1000^{\circ}C$, the dielectric constant was 20.5 in $O_{2}$ ambient and 23 in $N_{2}$ ambient, respectively. The crystal structure of $Ta_{2}O_{5}$ film was pseudo hexagonal of ${\delta}-Ta_{2}O_{5}$. The flat band voltage shift(${\Delta}V_{FB}$) of the specimens and the leakage current density were decreased for higher oxygen mixing ratio. The maximum breakdown field was 2.4MV/cm at the oxygen mixing ratio of 10%. The $Ta_{2}O_{5}$ films will be applicable to hydrogen ion sensitive film and gate oxide material for memory device.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2013.04a
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• pp.842-848
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• 2013

Developments of Solid-State Gyroscopy during last decades are impressive and were based on thin-walled shell resonators like HRG or CRG made from fused quartz or leuko-sapphire. However, a number of design choices for inertial-grade gyroscopes, which can be used for high-g applications and for mass- or middle-scale production, is still very limited. So, considerations of fundamental physical effects in solids that can be used for development of a miniature, completely solid-state, and lower-cost sensor look urgent. There is a variety of different types of bulk acoustic (elastic) waves (BAW) in anisotropic solids. Shear waves with different variants of their polarization have to be studied especially carefully, because shear sounds in glasses and crystals are sensitive to a turn of the solid as a whole, and, so, they can be used for development of gyroscopic sensors. For an isotropic medium (for a glass or a fine polycrystalline body), classic Lame's theorem (so-called, a general solution of Elasticity Theory or Green-Lame's representation) has been modified for enough general case: an elastic medium rotated about an arbitrary set of axes. Travelling, standing, and mixed shear waves propagating in an infinite isotopic medium (or between a pair of parallel reflecting surfaces) have been considered too. An analogy with classic Foucault's pendulum has been underlined for the effect of a turn of a polarizational plane (i.e., an integration effect for an input angular rate) due to a medium's turn about the axis of the wave propagation. These cases demonstrate a whole-angle regime of gyroscopic operation. Single-crystals are anisotropic media, and, therefore, to reflect influence of the crystal's rotation, classic Christoffel-Green's tensors have been modified. Cases of acoustic axes corresponding to equal velocities for a pair of the pure-transverse (shear) waves have of an evident applied interest. For such a special direction in a crystal, different polarizations of waves are possible, and the gyroscopic effect of "polarizational precession" can be observed like for a glass. Naturally, formation of a wave pattern in a massive elastic body is much more complex due to reflections from its boundaries. Some of these complexities can be eliminated. However, a non-homogeneity has a fundamental nature for any amorphous medium due to its thermodynamically-unstable micro-structure, having fluctuations of the rapidly-frozen liquid. For single-crystalline structures, blockness (walls of dislocations) plays a similar role. Physical nature and kinematic particularities of several typical "drifts" in polarizational BAW gyros (P-BAW) have been considered briefly too. They include irregular precessions ("polarizational beats") due to: non-homogeneity of mass density and elastic moduli, dissymmetry of intrinsic losses, and an angular mismatch between propagation and acoustic axes.

• Journal of Sensor Science and Technology
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• v.10 no.6
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• pp.328-337
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• 2001

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_2Se_4$ single crystal thin film, we observed free excition ($E_x$) existing only high quality crystal and neutral bound exiciton ($D^{\circ}$, X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.

• Journal of Sensor Science and Technology
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• v.4 no.1
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• pp.51-63
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• 1995

Polycrystalline $CdS_{1-x}Se_{x}$ thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study $CdS_{1-x}Se_{x}$ polycrystal structure using extrapolation method of X-ray diffraction patterns for the CdS, CdSe samples annealed in $N_{2}$ gas at $550^{\circ}C$ it was found hexagonal structure which had the lattice constant $a_{0}=4.1364{\AA}$, $c_{0}=6.7129{\AA}$ in CdS and $a_{0}=4.3021{\AA}$, $c_{0}=7.0142{\AA}$ in CdSe, respectively. Hall effect on these samples was measured by Van der Pauw method and then studied on carrier density and mobility depending on temperature. We measured also spectral response, sensitivity(${\gamma}$), maximum allowable power dissipation and response time on these samples.

• Journal of Sensor Science and Technology
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• v.7 no.2
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• pp.131-139
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• 1998

$CdS_{0.67}Se_{0.33}$ single crystal was grown by vertical sublimation method of closed tube physical vapour deposition. The (0001) growth plane of oriented single crystals was confirmed from the back-ref1ection Laue patterns. From the Hall effects by van der Pauw method, the as-grown $CdS_{0.67}Se_{0.33}$ single crystals were found to be n-type semiconductors. The mobility appeared to be decreased by lattice scattering at temperature range from 150K to 293K and by impurity scattering at temperatures ranging from 30K to 150K In order to explore its applicability in photoconductive cells, we measured the ratio of photo-current to dark-current (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time respectively. The results indicated that for the samples annealed in Cu vapour the photoconductive characteristics are best. We obtained sensitivity of 0.99, the value of pc/de of $1.84{\times}10^{7}$, the MAPD of 323mW and the rise and decay time of 9.3 ms and 9.7 ms, respectively.

• Journal of Sensor Science and Technology
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• v.4 no.3
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• pp.60-70
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• 1995

Polycrystalline $Cd_{1-x}Zn_{x}S$ thin film were grown on slide glass(corning-2948) substrate using a chemical bath deposition (C.B.D) method. They were annealed at various temperature and X -ray diffraction patterns were measured by X-ray diffractometor in order to study $Cd_{1-x}Zn_{x}S$ polycrystal structure using extrapolation method of X-ray diffraction patterns for the CdS, ZnS sample annealed in $N_{2}$ gas at $550^{\circ}C$. It was found hexagonal structure which had the lattice constant $a_{0}\;=\;4.1364{\AA}$, $c_{0}\;=\;6.7129{\AA}$ in CdS and $a_{0}\;=\;3.8062{\AA}$, $c_{0}\;=\;6.2681{\AA}$ in ZnS, respectively. Hall effect on these sample was measured by Van der Pauw method and then studied on carrier density and mobility depending on temperature. We measured also spectral response, sensitivity maximum allowable power dissipation and response time on these sample.