• Title/Summary/Keyword: sensor density

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Self-Localized Packet Forwarding in Wireless Sensor Networks

  • Dubey, Tarun;Sahu, O.P.
    • Journal of Information Processing Systems
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    • v.9 no.3
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    • pp.477-488
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    • 2013
  • Wireless Sensor Networks (WSNs) are comprised of sensor nodes that forward data in the shape of packets inside a network. Proficient packet forwarding is a prerequisite in sensor networks since many tasks in the network, together with redundancy evaluation and localization, depend upon the methods of packet forwarding. With the motivation to develop a fault tolerant packet forwarding scheme a Self-Localized Packet Forwarding Algorithm (SLPFA) to control redundancy in WSNs is proposed in this paper. The proposed algorithm infuses the aspects of the gossip protocol for forwarding packets and the end to end performance of the proposed algorithm is evaluated for different values of node densities in the same deployment area by means of simulations.

Development of UV imprinting process for micro lens array of image sensor (UV 임프린트를 이용한 이미지 센서용 마이크로 렌즈 어레이 성형 공정 개발)

  • Lim, Ji-Seok;Kim, Seok-Min;Jeong, Gi-Bong;Kim, Hong-Min;Kang, Shin-Il
    • 정보저장시스템학회:학술대회논문집
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    • 2005.10a
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    • pp.17-21
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    • 2005
  • High-density image sensors have microlens array to improve photosensitivity. It is conventionally fabricated by reflow process. The reflow process has some weak points. UV imprinting process can be proposed as an alternative process to integrate microlens array on photodiodes. In this study, the UV imprionting process to integrate microlens array on image sensor was developed using W transparent flexible mold and simulated image sensor substrate. The UV transparent flexible mold was fabricated by replicating master pattern using siliconacrylate photopolymer. The releasing property and shape accuacy of siliconacrylate mold was analysed. After UV imprinting process, replication quality and align accuracy was analysed.

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Sensitivity Analysis of Plasma Charge-up Monitoring Sensor

  • Lee Sung Joon;Soh Dea-Wha;Hong Sang Jeen
    • Journal of information and communication convergence engineering
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    • v.3 no.4
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    • pp.187-190
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    • 2005
  • High aspect ratio via-hole etching process has emerged as one of the most crucial means to increase component density for ULSI devices. Because of charge accumulation in via-hole, this sophisticated and important process still hold several problems, such as etching stop and loading effects during fabrication of integrated circuits. Indeed, the concern actually depends on accumulated charge. For monitoring accumulated charge during plasma etching process, charge-up monitoring sensor was fabricated and tested under some plasma conditions. This paper presents a neural network-based technique for analyzing and modeling several electrical performance of plasma charge-up monitoring sensor.

Sensitivity Analysis of Plasma Charge-up Monitoring Sensor Using Neural Networks

  • Lee, Sung-Joon;Kim, Sun-Phil;Soh, Dae-Wha;Hong, Sang-Jeen
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • v.9 no.2
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    • pp.303-306
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    • 2005
  • High aspect ration via-hole etching process has emerged as one of the most crucial means to increase component density for ULSI devices. Because of charge accumulation in via hole, this sophisticated and important process still hold several problems, such as etching stop, loading effects during fabrication of integrated circuits. Indeed, the concern actually depends on accumulated charge. For monitoring accumulated charge during plasma etching process, charge-up monitoring sensor was fabricated and tested under some plasma conditions. This paper presents a neural network-based technique for analyzing and modeling several electrical performance of plasma charge-up monitoring sensor.

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Development of UV imprinting process for micro lens array of image sensor (UV 임프린트를 이용한 이미지 센서용 마이크로 렌즈 어레이 성형 공정 개발)

  • Lim, Ji-Seok;Kim, Seok-Min;Jeong, Gi-Bong;Kim, Hong-Min;Kang, Shin-Il
    • Transactions of the Society of Information Storage Systems
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    • v.2 no.2
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    • pp.91-95
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    • 2006
  • High-density image sensors rave microlens array to improve photosensitivity. It is conventionally fabricated by reflow process. The reflow process has some weak points. UV imprinting process can be proposed as an alternative process to integrate microlens array on photodiodes. In this study, the UV imprionting process to integrate microlens array on image sensor was developed using UV transparent flexible mold and simulated image sensor substrate. The UV transparent flexible mold was fabricated by replicating master pattern using siliconacrylate photopolymer. The releasing property and shape accuacy of siliconacrylate mold was analysed. After UV imprinting process, replication quality and align accuracy was analysed.

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A Congestion Control Scheme Considering Traffic in Large-Scale Wireless Sensor Networks (대규모 무선 센서 네트워크에서 트래픽을 고려한 혼잡제어)

  • Kwak, Moon-Sang;Hong, Young Sik
    • Journal of KIISE
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    • v.42 no.1
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    • pp.114-121
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    • 2015
  • Large-scale wireless sensor networks are constructed by using a large number of sensor nodes that are non-uniformly deployed over a wide area. As a result, the data collected by the sensor nodes are similar to that from one another since a high density of the sensor nodes may cause an overlap. As a result of the characteristics of the traffic, data is collected from a plurality of sensor nodes by a sink node, and when the sensor nodes transmit their collected data to the sink node, the sensor nodes around the sink node have a higher amount of traffic than the sensor nodes far away from the sink node. Thus, the former sensor encounter bottlenecks due to traffic congestion and have an energy hole problem more often than the latter ones, increasing energy consumption. This paper proposes a congestion control scheme that considers traffic flows in order to control traffic congestion of the sensor nodes that are non-uniformly deployed over a large-scale wireless sensor network.

Development of active discharge tester for high capacity lithium-ion battery (대용량 리튬 이온 배터리용 Active 방전시험기의 개발)

  • Park, Joon-Hyung;Yunana, Gani Dogara;Park, Chan Won
    • Journal of Industrial Technology
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    • v.40 no.1
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    • pp.13-18
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    • 2020
  • Lithium-ion batteries have a small volume, light weight and high energy density, maximizing the utilization of mobile devices. It is widely used for various purposes such as electric bicycles and scooters (e-Mobility), mass energy storage (ESS), and electric and hybrid vehicles. To date, lithium-ion batteries have grown to focus on increasing energy density and reducing production costs in line with the required capacity. However, the research and development level of lithium-ion batteries seems to have reached the limit in terms of energy density. In addition, the charging time is an important factor for using lithium-ion batteries. Therefore, it was urgent to develop a high-speed charger to shorten the charging time. In this thesis, a discharger was fabricated to evaluate the capacity and characteristics of Li-ion battery pack which can be used for e-mobility. To achieve this, a smart discharger is designed with a combination of active load, current sensor, and temperature sensor. To carry out this thesis, an active load switching using sensor control circuit, signal processing circuit, and FET was designed and manufactured as hardware with the characteristics of active discharger. And as software for controlling the hardware of the active discharger, a Raspberry Pi control device and a touch screen program were designed. The developed discharger is designed to change the 600W capacity battery in the form of active load.

Analyses of Intrusion Detection Model in Wireless Sensor Networks (무선 센서 네트워크에서의 침입탐지 모델의 분석)

  • Kim, Jung-Tae
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2009.10a
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    • pp.857-860
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    • 2009
  • Intrusion detection in Wireless Sensor Network (WSN) is of practical interest in many applications such as detecting an intruder in a battlefield. The intrusion detection is defined as a mechanism for a WSN to detect the existence of inappropriate, incorrect, or anomalous moving attackers. For this purpose, it is a fundamental issue to characterize the WSN parameters such as node density and sensing range in terms of a desirable detection probability. In this paper, we consider this issue according to two WSN models: homogeneous and heterogeneous WSN.

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Case Study on Integrated In-line Oil Monitoring Sensor for Machine Condition Monitoring of Steel Making Industry (통합형 인-라인 오일 모니터링 센서의 제철설비 현장 적용사례)

  • Kong, H.;Han, H.G.;Kwak, J.S.;Chang, W.S.;Im, G.G.
    • Tribology and Lubricants
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    • v.26 no.1
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    • pp.73-77
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    • 2010
  • One of the important trends for condition monitoring in the 21st century is the development of smart sensors that will permit the cost-effective continuous monitoring of key machine equipments. In this study, an integrated in-line oil monitoring sensor assigned for continuous in situ monitoring multiple parameters of oil performance is presented. The sensor estimates oil deterioration based on the information about chemical degradation, total contamination, water content of oil and oil temperature. The oil oxidation is estimated by "chromatic ratio", total contamination is measured by the changes in optical density of oil in three optical wave-bands ('Red', 'Green' and 'Blue') and water content is evaluated as relative saturation of oil by water. In order to evaluate the sensor's effectiveness, the sensor was applied to several used oil samples in steel making industry and the results were compared with those measured by standard test methods.

Fabrication of a Silicon Hall Sensor for High-temperature Applications (고온용 실리콘 홀 센서의 제작)

  • 정귀상;류지구
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.6
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    • pp.514-519
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    • 2000
  • This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$as a dielectrical isolation layer a SDB SOI Hall sensor without pn junction has been fabricated on the Si/ $SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to 30$0^{\circ}C$ the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than $\pm$6.7$\times$10$_{-3}$ and $\pm$8.2$\times$10$_{-4}$$^{\circ}C$ respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and high-temperature operation.

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