• JSTS:Journal of Semiconductor Technology and Science
• /
• v.16 no.1
• /
• pp.31-38
• /
• 2016

A novel self-reference sense amplifier with parallel reading during writing operation is proposed. Read access time is improved compared to conventional self-reference scheme with fast operation speed by reducing operation steps to 1 for read operation cycle using parallel reading scheme, while large sense margin competitive to conventional destructive scheme is obtained by using self-reference scheme. The simulation was performed using standard $0.18{\mu}m$ CMOS process. The proposed self-reference sense amplifier improved not only the operation speed of less than 20 ns which is comparable to non-destructive sense amplifier, but also sense margin over 150 mV which is larger than conventional sensing schemes. The proposed scheme is expected to be very helpful for engineers for developing MRAM technology.

• Proceedings of the IEEK Conference
• /
• 2002.07c
• /
• pp.1555-1557
• /
• 2002

We have investigated the precharge type sense amplifier, it is suitable fur voltage sensing in a NOR type single transistor ferroelectric field effect transistor (1T FeFET) memory read operation. The proposed precharge type sense amplifier senses the bit line voltage of 1T FeFET memory. Therefore, the reference celt is not necessary compared to current sensing in 1T FeFET memory, The high noise margin is wider than the low noise margin in the first inverter because requires tile output of precharge type sense amplifier high sensitivity to transition of input signal. The precharge type sense amplifier has very simple structure and can sense the bit line signal of the 1T FeFET memory cell at low voltage.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.11 no.2
• /
• pp.485-490
• /
• 2010

We propose the equivalent circuit model including all parasitic components in input gate of sense amplifier of DDI DRAM with butting contact structure. We analysed the effect of parasitic schottky diode by using the proposed model in the operation of sense amplifier. The cause of single side fail and the temperature dependence of fail rate in DDI DRAM are due to creation of the parasitic schottky diode in input gate of sense amplifier. The parasitic schottky diode cause the voltage drop in input gate, and result in decreasing noise margin of sense amplifier. therefore single side fail rate increase.

• The Journal of the Convergence on Culture Technology
• /
• v.6 no.1
• /
• pp.361-366
• /
• 2020

The Korean movies, and are suitable for "B-movie" for spending low budget and utilizing subculture factors such as kitsch, parody. Using surrealistic space and arbitrary language is the most prior element in constituting 'B-affection'. In that sense, Behind the Dark Night, Super Margin have characteristics overcrossing the media from comics to film. Despite absurd story, Behind the Dark Night has a realistic and concrete sense of what is the making films. The hero in Super Margin was swindled, so he strikes a blow the breeding-place of crime himself. In conclusion, showing comics characteristic aspects has been increasing comedy effects. But, on the other hand, Behind the Dark Night, Super Margin have pointed out that there are many kind of social problems such like career, fraud etc. In addition, they introspect the meaning what is that to making films.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.6 no.2
• /
• pp.87-89
• /
• 2006

This paper proposes a sense amplifier with non-volatile memory in order to improve the image quality of LCD by enhancing the matching of the driving voltages between the panel and driver. The sense amplifier having a wide sensing margin and fast response adjusts LCD driver voltage of display driver. The CSTN-LCD with the sense amplifier results improved image quality than that with conventional 6 bit column driver without it.

• Journal of Science of Art and Design
• /
• v.6
• /
• pp.267-287
• /
• 2004

The study of a new expression within Korean ink painting that meets the demands of the times has continued, resulting in various expressions with acrylics, handycoat, objects and installations, crossing over from traditional Korean painting techniques. A 'margin' was both a very important space and esthetical matter that expresses 'Ki', 'Distance', and 'Omission' in traditional sense when addressing Korean ink painting Its expression methods and concepts, however, have changed today. A 'margin' through Montage technique can be a significant example in understanding the expression methods of today's Korean ink painting. This is because the margins in Montage make the meaning of the work various and flourished and deeply construct the surface with a double-layered structure, instead of using a single layer. These 'margins' created by Montage are spaces where different images conflict, divide and continue with each other and where a reconciliation between different spaces is accomplished. Furthermore, they establish more vitality and truthfulness to life through both the images conflict and reconciliation. After the adoption of Post-modernism Art in Korean ink painting, the characteristics of the 'margin' in Montage style by the division of surface are an 'acceptant's participatory imaginative space'; where viewers fill the margins with their imaginations ; an 'abandoned space' ; where unnecessary parts are deleted for more live surface ; and a 'strategic space', where the work enriches the structure and contents of surface by using margins strategically.

• The Journal of Korean Academy of Orthopedic Manual Physical Therapy
• /
• v.27 no.3
• /
• pp.1-15
• /
• 2021

Objective: The purpose of this study was to examine the differences in joint position sense (JPS), force sense (FS), and performance level of the upper extremities according to the injury and pain experiences of Korean elite archers. Methods: A total of 15 subjects were briefed about the purpose of this study and agreed to participate voluntarily. JPS was evaluated using the laser-point attached to the wrist while aiming at the target. The difference when relocating while aiming was used as JPS factor. FS was evaluated using load cell through reproduces same muscle strength. Fear-Avoidance Beliefs Questionnaire (FABQ) was used to evaluate psychosocial factors, Kerlan-Jobe Orthopedic Clinic overhead athlete scores (KJOC) and numerical rating scale (NRS) was used to evaluate pain. and performance was evaluated by tournament match score. Results: There is a strong correlation between the current pain and KJOC. Moreover, moderate correlation between KJOC and FABQ also current pain and both upper trapezius and lower trapezius in elite archers. The mean (SD) between groups based on current pain display relatively large margin in force sense than without pain group. The result presents that there is a significant difference in performance and pain. There is a significant difference in the force sense of the upper and lower trapezius and pain. Conclusions: Result present there is a significant difference in functional level in the average comparison between groups according to the presence of absence of current pain. There is a significant difference in the force sense of the upper trapezius as well as lower trapezius and without pain group present a relatively low joint position sense error compared to the groups.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.7 no.2
• /
• pp.67-75
• /
• 2007

To improve low sense margin at low voltage, we propose a negatively driven sensing (NDS) scheme and to solve the problem of WL-to-BL short leakage fail, a variable bitline reference scheme with free-level precharged bitline (FLPB) scheme is adopted. The influence of the threshold voltage offset of NMOS and PMOS transistors in a latch type sense amplifier is very important factor these days. From evaluating the sense amplifier offset voltage distribution of NMOS and PMOS, it is well known that PMOS has larger distribution in threshold voltage variation than that of NMOS. The negatively-driven sensing (NDS) scheme enhances the NMOS amplifying ability. The offset voltage distribution is overcome by NMOS activation with NDS scheme first and PMOS activation followed by time delay. The sense amplifier takes a negative voltage during the sensing and amplifying period. The negative voltage of NDS scheme is about -0.3V to -0.6V. The performance of the NDS scheme for DRAM at the gigabit level has been verified through its realization on 1-Gb DDR2 DRAM chip.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.8 no.2
• /
• pp.128-133
• /
• 2008

Phase-change random access memory (PRAM) chip cell phase of amorphous state is rapidly changed to crystal state above 160 Celsius degree within several seconds during Infrared (IR) reflow. Thus, on-board programming method is considered for PRAM chip programming. We demonstrated the functional 512Mb PRAM with 90nm technology using several novel core circuits, such as metal-2 line based global row decoding scheme, PN-diode cells based BL discharge (BLDIS) scheme, and PMOS switch based column decoding scheme. The reverse-state standby current of each PRAM cell is near 10 pA range. The total leak current of 512Mb PRAM chip in standby mode on discharging state can be more than 5 mA. Thus in the proposed BLDIS control, all bitlines (BLs) are in floating state in standby mode, then in active mode, the activated BLs are discharged to low level in the early timing of the active period by the short pulse BLDIS control timing operation. In the conventional sense amplifier, the simultaneous switching activation timing operation invokes the large coupling noise between the VSAREF node and the inner amplification nodes of the sense amplifiers. The coupling noise at VSAREF degrades the sensing voltage margin of the conventional sense amplifier. The merit of the proposed sense amplifier is almost removing the coupling noise at VSAREF from sharing with other sense amplifiers.

• The Korean Journal of Petroleum Geology
• /
• v.1 no.1 s.1
• /
• pp.15-27
• /
• 1993

Seismic reflection profiles from the eastern continental margin of Korea delineate three major Neogene sedimentary basins perched on the shelf and slope regions: Pohang-Youngduk, Mukho and Hupo basins. The stratigraphic and structural analyses demonstrate that the formation and filling of these basins were intimately controlled by two phases of regional tectonism: transtensional and subsequent contractional deformations. In the Oligocene to Early Miocene, back-arc opening of the East Sea induced extensional shear deformation with dextral strike-slip movement along right-stepping Hupo and Yangsan faults. During the transtensional deformation, the Pohang-Youngduk Basin was formed by pull-apart opening between two strike-slip faults; in the northern part, block faulting caused to form the Mukho Basin between basement highs. As a result of the back-arc closure, the stress field was inverted into compression at the end of the Middle Miocene. Under the compressive regime, two episodes (Late Miocene and Early Pliocene) of regional deformation led to the destruction and partial uplift of the basin-filling sequences. In particular, during the second episode of compressive deformation, the Hupo fault was reactivated with an oblique-slip sense, which resulted in an opening of the Hupo Basin as a half-graben on the downthrown fault block.