• Korean Journal of Optics and Photonics
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• v.32 no.2
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• pp.68-78
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• 2021

A subminiature catadioptric omnidirectional optical system (SCOOS) with 2 mirrors, 6 plastic aspherical lenses, and an illumination system of 6 light emitting diodes, to observe the 360° panoramic image of the inner intestine, is optically designed and evaluated for a capsule endoscope. The total length, overall length, half field of view (HFOV), and F-number of the SCOOS are 14.3 mm, 8.93 mm, 51°~120°, and 3.5, respectively. The optical system has a complementary metal-oxide-semiconductor sensor with 0.1 megapixels, and an illumination system of 6 light-emitting diodes (LEDs) with 0.25 lm to illuminate on the 360° side view of the intestine along the optical axis. As a result, the spatial frequency at the modulation transfer function (MTF) of 0.3, the depth of focus, and the cumulative probability of tolerance at the Nyquist frequency of 44 lp/mm and MTF of 0.3 of the optimized optical system are obtained as 130 lp/mm, -0.097 mm to +0.076 mm, and 90.5%, respectively. Additionally, the simulated illuminance of the LED illumination system at the inner surface of the intestine within HFOV, at a distance of 15.0 mm from the optical axis, is from a minimum of 315 lx to a maximum of 725 lx, which is a sufficient illumination and visibility.

• Journal of Adhesion and Interface
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• v.25 no.2
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• pp.56-62
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• 2024

In this study, LiDAR-detectable black hollow-structured materials are synthesized using different reducing agents to evaluate their applicability to LiDAR sensor. Initially, white SiO₂/TiO₂ core/shell (WST) materials are fabricated via a sol-gel method, followed by a reduction using ascorbic acid (AA) and sodium borohydride (SB). After the reduction, subsequent etching of the SiO₂ core leads to the formation of two different black hollow-structured materials (AA-BHT and SB-BHT). The lightness (L^*) and near-infrared (NIR) reflectance (R%) of AA-BHT are measured as ca. 19.1 and 34.5 R%, and SB-BHT shows values of ca. 11.5 and 31.8 R%, respectively. While AA-BHT exhibits higher NIR reflectance compared to SB-BHT, it displays slightly lower blackness. Compared with core/shell structured materials, improved NIR reflectance of both AA-BHT and SB-BHT is attributed to the morphology of hollow- structured materials, which increase light reflection at the interface between air and black TiO₂ according to the Fresnel's reflection principle. Consequently, both AA-BHT and SB-BHT are effectively detected by the commercially available LiDAR sensors, validating their suitability as black materials for autonomous vehicle and environment.

• Korean Chemical Engineering Research
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• v.47 no.6
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• pp.715-719
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• 2009

The phase change electrode board for the bio-information detection through electrical property response of phase change material was developed in this study. We manufactured the electrode board using Aluminum first that is widely used in conventional semiconductor device process. Without further treatment, these aluminum electrodes tend to contain voids in PETEOS(plasma enhanced tetraethyoxysilane) material that are easily detected by cross-sectional SEM(Scanning Electron Microscope). The voids can be easily attacked and transformed into holes in between PETEOS and electrodes after etch back and washing process. In order to resolve this issue of Al electrode board, we developed a electrode board manufacturing method using low resistivity TiN, which has advantages in terms of the step-coverage of phase change($Ge_2Sb_2Te_5$, GST) thin film as well as thermodynamic stability, without etch back and washing process. This TiN material serves as the top and bottom electrode in PRAM(Phase-change Random Access Memory). The good connection between the TiN electrode and GST thin film was confirmed by observing the cross-section of TiN electrode board using SEM. The resistances of amorphous and crystalline GST thin film on TiN electrodes were also measured, and 1000 times difference between the amorphous and crystalline resistance of GST thin film was obtained, which is well enough for the signal detection.

• Journal of the Korean Society of Radiology
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• v.5 no.6
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• pp.357-361
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• 2011

In this study, the liquid-crystal optical modulation X-ray detection system using a CdS which is a family of II-IV compound semiconductor was proposed. The system consist of the detector, the signal processing part, the liquid-crystal driving parts, microcontroller, and I/O parts, and was designed to be suitable for miniaturization and portable. In addition, the system can measure a wide range X-ray by using the detecting range selection. In order to evaluate the performance of the proposed system, the CdS sensor's output characteristics were confirmed in accordance with changes of dose, and excellent correlation was determined. And also, the optical penetration ratio was discussed in accordance with changes of the applied voltage by measuring the change of the liquid-crystal in accordance with changes of the applied voltage. Through these results, the characteristics of the liquid-crystal optical modulation system such as the excellent reproducibility and the noise immunity were confirmed. And we considered that the CdS cell-based liquid-crystal optical modulated portable X-ray detection system could be applied to compact, low-cost, portable system.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.6
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• pp.282-288
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• 2017

In this paper, GaAs/AlGaAs multi-layer structure was grown by liquid phase epitaxy with graphite sliding boat, which can be used as a device structure of a photocathode image sensor. The multi-layer structure was grown on an n-type GaAs substrate in the sequence as follows: GaAs buffer layer, Zn-doped p-type AlGaAs layer as etching stop layer, Zn-doped p-type GaAs layer, and Zn-doped p-type AlGaAs layer. The Characteristics of GaAs/AlGaAs structures were analyzed by using scanning electron microscope (SEM), secondary ion mass spectrometer (SIMS) and hall measurement. The SEM images shows that the p-AlGaAs/p-GaAs/p-AlGaAs multi-layer structure was grown with a mirror-like surface on a whole ($1.25mm{\times}25mm$) substrate. The Al composition in the AlGaAs layer was approximately 80 %. Also, it was confirmed that the free carrier concentration in the p-GaAs layer can be adjusted to the range of $8{\times}10^{18}/cm^2$ by hall measurement. In the result, it is expected that the p-AlGaAs/p-GaAs/p-AlGaAs multi-layer structure grown by the LPE can be used as a device structure of a photoelectric cathode image sensor.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.7
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• pp.1777-1783
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• 2014

In this paper, we designed and fabricated a high-speed semiconductor sensor for use in power control devices and analyzed the characteristics with pulsed radiation tests. At first, radiation sensitive circular Si PIN diodes with various diameters(0.1 mm ~5.0 mm) were designed and fabricated using Si epitaxial wafer, which has a $42{\mu}m$ thick intrinsic layer. The reverse leakage current of the diode with a radius of 2 mm at a reverse bias of 30 V was about 20.4 nA. To investigate the characteristic responses of the developed diodes, the pulsed gamma-radiation tests were performed with the intensity of 4.88E8 rad(Si)/sec. From the test results showing that the output currents and the rising speeds have a linear relationship with the area of the sensors, we decided that the optimal condition took place at a 2 mm diameter. Next, for the selected 2 mm diodes, dose rate tests with a range of 2.47E8 rad(Si)/sec to 6.21E8 rad(Si)/sec were performed. From the results, which showed linear characteristics with the radiation intensity, a large amount of photocurrent over 60mA, and a high speed response under 350ns without saturation, we can conclude that the our developed PIN diode can be a good candidate for the sensor of power control devices.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.3
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• pp.69-76
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• 2008

This work proposes a 12b 1kS/s 65uA 0.35um CMOS algorithmic ADC for sensor interface applications such as accelerometers and gyro sensors requiring high resolution, ultra-low power, and small size simultaneously. The proposed ADC is based on an algorithmic architecture with recycling techniques to optimize sampling rate, resolution, chip area, and power consumption. Two versions of ADCs are fabricated with a conventional open-loop sampling scheme and a closed-loop sampling scheme to investigate the effects of offset and 1/f noise during dynamic operation. Switched bias power-reduction techniques and bias circuit sharing reduce the power consumption of amplifiers in the SHA and MDAC. The current and voltage references are implemented on chip with optional of-chip voltage references for low-power SoC applications. The prototype ADC in a 0.35um 2P4M CMOS technology demonstrates a measured DNL and INL within 0.78LSB and 2.24LSB, and shows a maximum SNDR and SFDR of 60dB and 70dB in versionl, and 63dB and 75dB in version2 at 1kS/s. The versionl and version2 ADCs with an active die area of $0.78mm^2$ and $0.81mm^2$ consume 0.163mW and 0.176mW at 1kS/s and 2.5V, respectively.

• Korean Chemical Engineering Research
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• v.48 no.2
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• pp.218-223
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• 2010

The zinc oxide thin film, which can be applied as the gas sensor of a semiconductor type, was grown on the silicon substrate by CFR(continuous flow reaction) method in this study. The growth property and the electrical property of the zinc oxide thin films synthesized by CFR method were also investigated. Zinc acetate solutions of 0.005~0.02 M were used as the precursor for the preparation of zinc oxide thin films. The size of ZnO particles consisted on the zinc oxide thin film increased not only with increasing concentration of precursor, but also the thickness of thin film increased. The growth rate of zinc oxide thin film by CFR method was proportionably depend on the concentration of precursor and the uniform ZnO thin film was prepared when zinc acetate of 0.01 M is used as the precursor. The charged currents on the zinc oxide thin films were obtained as its electrical property by I-V meter, and increased agree with increasing the thickness of zinc oxide thin film. Thus, it was concluded that the charged current on the zinc oxide thin film can be controlled with changing concentration of precursor solution in CFR method. The charged currents on the zinc oxide thin films also decreased when ZnO thin film is exposed under hydrogen sulfide of 500 ppmv at $300^{\circ}C$ for 5 min. From these results, it could be confirmed that the zinc oxide thin film prepared by CFR method can be used for the detection of sulfur compounds.

• Korean Journal of Remote Sensing
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• v.37 no.5_1
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• pp.1013-1027
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• 2021

Images taken with KOMPSAT-3 have additional NIR and PAN bands, as well as RGB regions of the visible ray band, compared to imagestaken with a standard camera. Furthermore, electrical and optical properties must be considered because a wide radius area of approximately 17 km or more is photographed at an altitude of 685 km above the ground. In other words, the camera sensor of KOMPSAT-3 is distorted by each CCD pixel, characteristics of each band,sensitivity and time-dependent change, CCD geometry. In order to solve the distortion, correction of the sensors is essential. In this paper, we propose a method for detecting uniform regions in side-slider-based KOMPSAT-3 images using segment-based noise analysis. After detecting a uniform area with the corresponding algorithm, a correction table was created for each sensor to apply the non-uniformity correction algorithm, and satellite image correction was performed using the created correction table. As a result, the proposed method reduced the distortion of the satellite image,such as vertical noise, compared to the conventional method. The relative radiation accuracy index, which is an index based on mean square error (RA) and an index based on absolute error (RE), wasfound to have a comparative advantage of 0.3 percent and 0.15 percent, respectively, over the conventional method.

• Korean Journal of Remote Sensing
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• v.38 no.3
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• pp.225-236
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• 2022

Urbanization due to population growth and regional development can cause various environmental problems, such as the urban heat island phenomenon. A planned city is considered an appropriate study site to analyze changes in urban climate caused by rapid urbanization in a short-term period. In this study, changes in land cover and surface heat island phenomenon were analyzed according to the development plan in Sejong City from 2013 to 2020 using Landsat-8 Operational Land Imager/Thermal Infrared Sensor (OLI/TIRS) satellite imagery. The surface temperature was calculated in consideration of the thermal infrared band value provided by the satellite image and the emissivity, and based on this the surface heat island effect intensity and Urban Thermal Field Variance Index (UTFVI) change analysis were performed. The level-2 land cover map provided by the Ministry of Environment was used to confirm the change in land cover as the development progressed and the difference in the surface heat island intensity by each land cover. As a result of the analysis, it was confirmed that the urbanized area increased by 15% and the vegetation decreased by more than 28%. Expansion and intensification of the heat island phenomenon due to urban development were observed, and it was confirmed that the ecological level of the area where the heat island phenomenon occurred was very low. Therefore, It can suggest the need for a policy to improve the residential environment according to the quantitative change of the thermal environment due to rapid urbanization.