• Corrosion Science and Technology
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• 제2권1호
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• pp.7-11
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• 2003

Photoelectrochemical response and electrochemical impedance behavior was investigated for passive film formed on sputter-deposited Cr alloy in $0.1kmol{\cdot}m^{-3}$. Photoelectrochemical action spectrum could be separated into two components, which were considered to be derived from $Cr_2O_3$ ($E_g\sim3.6eV$) and $ Cr(OH)_3 $ ($E_g\sim2.5eV$). The band gap energy, $E_g$, of each component was almost constant for various applied potentials. polarization periods and alloying additives. The photoelectrochemical response showed negative photo current for most potentials in the passive region. Therefore, the photo current apparently exhibited p-typesemiconductor behavior. On the other hand, Mort-Schottky plot of the capacitance showed positive slope, which means that passive film formed on Cr alloy has n-type semiconductor property. These apparently conflicting results are rationally explained assuming that the passive film on Cr alloy formed in the acid solution has n-type semiconductor property with a fairly deep donor level in the band gap and forms an accumulation layer in the most of potential region in the passive state.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.126-127
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• 2005

Semiconductor carbon nanotube was grown on oxided silicon wafer with Atmosphere Pressure Chemical Vapor Deposition (APCVD) ethmod and investigated the electrical property after thermal oxidation at 300$^{\circ}C$ in air. The electrical property was measured at room temperature in air after thermal oxidation at 300$^{\circ}C$ for various times in air. Semiconductor carbon nanotube was steadily changed to metallic carbon nanotube as increasing of thermal oxidation times at 300$^{\circ}C$ in air.

• 한국진공학회지
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• 제1권1호
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• pp.206-211
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• 1992

SIMOX SOI structures were formed by oxygen ion implantation with a dose of 2 1018 ions/cm2 at 180kev and post-implantation annealing at $1250^{\circ}C$ for 6 hours in nitrogen ambient. The oxygen redistribution process during post-implantation annealing was examined by AES and TEM. The electrical property of the structure was investigated by SRP method. We could find oxygen precipitates in SOI layer was discussed. And the limiting factor to the decrease of the precipitates during post-implantation annealing was discussed also.

• Journal of Radiation Protection and Research
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• 제34권2호
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• pp.65-68
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• 2009

Metal-semiconductor contact is very important for the operating property of semiconductor detector. $Cd_{0.96}$ $Zn_{0.04}$ Te semiconductor crystal was grown with Bridgman method, and the crystal was cut and polished. EPMA (Electron Probe Micro Analyzer) and ICP-MS (Inductively Coupled Plasma Mass Spectrometry) analysis were done to obtain the chemical composition and impurity of the crystal. Metal contact was deposited with thermal evaporator on both sides of the crystal. Detectors with Au/CZT/Au and In/CZT/Au structure were made, and I-V curve and the energy spectrum were measured with the detectors. It could be seen that the detector with the In/CZT/Au structure has superior property than the detector with Au/CZT/Au structure when the crystal resistivity was low. However, the metal contact structure effect becomes low when the crystal resistivity was high.

• 산업기술연구
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• 제9권
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• pp.109-117
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• 1989

In the finite element analysis of semiconductor devices analysis, the solution often be diverged due to the numerical instability of discretized equations. To overcome this problems, a noble finite element code which guarantees a successful convergence is developed. The factor of divergence in the current continuity equation of semiconductor governing equations is derived using stability test and an adaptive mesh refine scheme is introduced to eliminates the divergence properties. A test calculation of GaAs MESFET model reveals that the proposed scheme has a robust self-convergence property and is suitable for the semiconductor devices analysis.

• 한국정보처리학회:학술대회논문집
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• 한국정보처리학회 2021년도 춘계학술발표대회
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• pp.151-154
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• 2021

Rust is a promising system programming language that made its debut in 2010. It was developed to address the security problems in C/C++. It features a property called ownership, on which it relies to mitigate memory attacks. For this and its many other features, the language has consistently gained popularity and many companies have begun to seriously consider it for production uses. However, Rust also supports safe and unsafe regions under which the foreign function interface (FFI), used to port to other languages, falls. In the unsafety region, Rust surrenders most of its safety features, allowing programmers to perform operations without check. In this study, we analyze the security issues that arise due to Rust's safety/unsafety property, especially those introduced by Rust FFI.

• 한국진공학회지
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• 제16권1호
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• pp.40-45
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• 2007

본 연구에서는 광전자 소자에 폭넓게 사용되는 ZnCdSe 화합물 반도체의 end-point인 CdSe의 유전함수 spectrum을 Vacuum Ultra Violet spectroscopic ellipsometry(타원편광분석법) 측정하여 분석하였다. 측정 결과는 변수화 모델을 이용하여 분석하였으며 그 결과 6 eV 이상에 존재하는 전자전이점들을 확인할 수 있었고 CdSe의 Critical Point(CP) 구조를 수치화 함으로써 온도나 화합물 함량에 따른 광특성 의존성 연구 등에 활용될 수 있는 database를 확보하였다.

• 한국결정성장학회지
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• 제15권2호
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• pp.57-60
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• 2005

[ $SiO_2$ ]로 산화된 웨이퍼 위에 상압화학기상증착 기술로 반도체 탄소나노튜브를 성장했으며, 이 나노튜브의 전기적 특성을 조사하였다. 전기적 특성은 반도체 탄소나노튜뷰를 $300^{\circ}C$, 대기 중에서 산화 열처리 시간을 변화시키면서 상온대기에서 측정하였다. 반도체 탄소나노튜브는 $300^{\circ}C$에서 산화 열처리 시간을 증가할수록 점차적으로 금속 탄소나노튜브로 변형되는 것을 보았다. 탄소나노튜브는 $300^{\circ}C$, 대기에서 6시간 동안 산화 열처리 후 표면의 일부가 없어지는 현상을 투과 전자현미경으로 확인하였다.

• 반도체디스플레이기술학회지
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• 제2권3호
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• pp.1-6
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• 2003

In the rapid changes of the semiconductor manufacturing technologies for early 21st century, it may be safely said that a kernel of terms is the size increase of Si wafer and the size decrease of semiconductor devices. As the size of Si wafers increases and semiconductor device is miniaturized, the units of cleaning processes increase. A present cleaning technology is based upon RCA cleaning which consumes vast chemicals and ultra pure water (UPW) and is the high temperature process. Therefore, this technology gives rise to environmental issue. To resolve this matter, candidates of advanced cleaning processes have been studied. One of them is to apply the electrolyzed water. In this work, electrolyzed water cleaning was compared with various chemical cleaning, using Si wafer surfaces by changing cleaning temperature and cleaning time, and especially, concentrating upon the contact angle. It was observed that contact angle on surface treated with Electrolyzed water cleaning was $4.4^{\circ}$ without RCA cleaning. Amine series additive of high pKa (negative logarithm of the acidity constant) was used to observe the property changes of cathode water.

• 반도체디스플레이기술학회지
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• 제14권3호
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• pp.27-31
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• 2015

It was the electrical properties of ZnS treated by the annealing in a vaccum and an atmosphere conditions to reseached the leakage current effect of semiconductor devices. Most samples were shown the non-linear with unipolar properties, but the ZnS annealed at $100^{\circ}C$ in a vaccum was only observed no leakage current in a range of -20 V< voltage < 15 V. The crystallinity of ZnS with no leakage current was improved and optical property was also improved. Because the ambipolar characteristics and low leakage currents originated from the extension effect of a depletion width by electron-hole combination in the depletion layer.