• 한국전기화학회:학술대회논문집
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• 한국전기화학회 1998년도 제1회 총회 및 추계학술발표회
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• pp.27-27
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• 1998

• 전기저널
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• 8호통권164호
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• pp.19-25
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• 1990

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.609-613
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• 2004

On this study, electrochemical polishing is adapted to ultra-fine surface for semiconductor large radius gas-tube. The system which buffing and electrochemical polishing can be performed simultaneously was constructed in connection with developing exclusive system. Based on existing papers and the research of background, electrode gap and electrolyte flow were fixed. Current density and electrochemical precision time were chosen as variables. On this study, it is objected to find optimal precision condition and precision variables on the in-process electrochemical polishing.

• 한국환경과학회지
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• 제22권8호
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• pp.1019-1027
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• 2013

Sulfur hexa-fluoride has been used as a etching gas in semiconductor industry. From the globally environmental issues, it is urgent to control the emissions of this significant greenhouse gas. The main objective of this experimental investigation was to find the effective catalyst for $SF_6$ decomposition. The precursor catalyst of hexa-aluminate was prepared to investigate the catalytic activity and stability. The precursor catalyst of hexa-aluminate was modified with Ni to enhance the catalytic activities and stability. The catalytic activity for $SF_6$ decomposition increased by the addition of Ni and maximized at 6wt% addition of Ni. The addition of 6wt% Ni in precursor catalyst of hexa-aluminate improved the resistant to the HF and reduced the crystallization and phase transition of catalyst.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권2호
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• pp.82-87
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• 2007

The electrical properties of metallic junction diodes and metallic source/drain (S/D) Schottky barrier metal-oxide-semiconductor field-effect transistor (SB-MOSFET) were simulated. By using the abrupt metallic junction at the S/D region, the short-channel effects in nano-scaled MOSFET devices can be effectively suppressed. Particularly, the effects of trap states at the metal-silicide/silicon interface of S/D junction were simulated by taking into account the tail distributions and the Gaussian distributions at the silicon band edge and at the silicon midgap, respectively. As a result of device simulation, the reduction of interfacial trap states with Gaussian distribution is more important than that of interfacial trap states with tail distribution for improving the metallic junction diodes and SB-MOSFET. It is that a forming gas annealing after silicide formation significantly improved the electrical properties of metallic junction devices.

• 반도체디스플레이기술학회지
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• 제7권2호
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• pp.55-58
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• 2008

The objective of the research is to design, manufacture and test a Mass Flow Controller(MFC) capable of measuring compressible fluid flows based on a "bucket and stop-watch"method. The basic principle is the measurement of time, where the time taken to fill and empty a bucket of known volume is measured. This method of flow measurement is a new concept when compared to a commercilized current mass flow controller. For the flow meter to be able to compete with established designs it not only must be comparable in cost and robustness, it must be very accurate and reliable as well. This device should be able to handle fluid flows in the range of 0.1ml/min to 10ml/min within an accuracy of ${\pm}$1%. A possible application for a device such as this is in electronics industry where arsenic gas is used in the production of silicon chips.

• 반도체디스플레이기술학회지
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• 제15권1호
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• pp.70-75
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• 2016

GZO films prepared on ITO glasses were annealed at various temperatures in a vacuum condition to research the relationship between oxygen vacancies and optical properties. GZO films after annealing in a vacuum showed the various optical-chemical properties depending on the annealing temperatures and oxygen gas flow rate during the deposition. The oxygen vacancy of GZO film prepared by oxygen gas flows of 22 sccm increased with increasing the annealing temperatures, because of the extraction of oxygen by the annealing. But the intensity of photoluminance of GZO with 22 sccm decreased in accordance with the annealing temperature, because of the reduction of ionized charge carriers. The oxygen vacancy by the extraction of oxygen enhanced a depletion, so the widen depletion had the strong Schottky barrier and the PL intensity due to the low carrier density decreased.

• 대한기계학회논문집B
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• 제26권12호
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• pp.1715-1721
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• 2002

Numerical analysis was conducted to characterize the gas flow field and particle deposition on a horizontal freestanding semiconductor wafer under the laminar flow field at vacuum environment. In order to calculate the properties of gas, the gas was assumed to obey the ideal gas law. The particle transport mechanisms considered were convection, Brownian diffusion and gravitational settling. The averaged particle deposition velocities and their radial distributions fnr the upper surface of the wafer were calculated from the particle concentration equation in an Eulerian frame of reference for system pressures of 1 mbar~1 atm and particle sizes of 2nm~10$^4$ nm(10 ${\mu}{\textrm}{m}$). It was observed that as the system pressure decreases, the boundary layer of gas flow becomes thicker and the deposition velocities are increased over the whole range of particle size. One thing to be noted here is that the deposition velocities are increased in the diffusion dominant particle size range with decreasing system pressure, whereas the thickness of the boundary layer is larger. This contradiction is attributed to the increase of particle mechanical mobility and the consequent increase of Brownian diffusion with decreasing the system pressure. The present numerical results showed good agreement with the results of the approximate model and the available experimental data.

• 반도체디스플레이기술학회지
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• 제11권4호
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• pp.19-23
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• 2012

We report microbolometer characteristic with n-type and p-type amorphous silicon thin film. The n-type and p-type amorphous silicon thin films were made by PECVD. The electrical properties of n-type and p-type a-Si:H thin films were investigated as a function of doping gas flow rate. The doping gas used $B_2H_6/Ar$ (1:9) and $PH_3/Ar$ (1:9). In general, the conductivity of doping a-Si:H thin films increased as doping gas increase but the conductivity of a-Si:H thin films decreased as the doping gas increase because doping gas concentration increase led to dilution gas (Ar) increase as the same time. We fabricated an amorphous silicon microbolometer using surface micromachining technology. The fabricated microbolometer had a negative TCR of 2.3%. The p-type microbolometer had responsivity of $5{\times}10^4V/W$ and high detectivity of $3{\times}10^8cm(Hz)^{1/2}/W$. The p-type microbolometer had more detectivity than n-type for less noise value.

• 센서학회지
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• 제25권6호
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• pp.423-430
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• 2016

This study used a single metal oxide semiconductor (MOS) sensor to classify the major odorous gases hydrogen sulfide ($H_2S$), ammonia ($NH_3$) and toluene ($C_6H_5CH_3$). In order to classify these odorous substances, the voltage on the MOS sensor heater was gradually reduced in 0.5 V steps 5.0 V to examine the changes to the response by the cooling effect on the sensor as the voltage decreased. The hydrogen sulfide gas showed the highest sensitivity compared to odorless air under approximately 2.5 V and the ammonia and toluene gases showed the highest sensitivity under approximately 5.0 V. In other words, the hydrogen sulfide gas reacted better in the low temperature range of the MOS sensor, and the ammonia and toluene gases reacted better in the high-temperature range. In order to analyze the response characteristics of the MOS sensor by temperature in a pattern, a two-dimensional (2D) x-y pattern analysis was introduced to clearly classify the hydrogen sulfide, ammonia, and toluene gases. The hydrogen sulfide gas was identified by a straight line with a slope of 1.73, whereas the ammonia gas had a slope of 0.05 and the toluene gas had a slope of 0.52. Therefore, the 2D x-y pattern analysis is suggested as a new way to classify these odorous substances.