• Journal of IKEEE
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• v.27 no.1
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• pp.19-24
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• 2023

Since silicon having a band gap energy of about 1.12 eV are limited to a maximum operating temperature of less than 250 ℃, the sample with MIS structure based on the SiC substrate of wide-band gap energy was manufactured and the hydrogen response characteristics at high temperatures were investigated. The dielectric layer applied here is a tantalum oxide layer that is highly permeable to hydrogen gas and shows stability at high temperatures. It was formed by RTO at a temperature of 900 ℃ with tantalum. The thickness, depth profiles, and leakage current of the tantalum oxide layer were analyzed through TEM, SIMS, and leakage current characteristics. For the hydrogen gas response characteristics, the capacitance change characteristics were investigated in the temperature range from room temperature to 400 ℃ for hydrogen gas concentrations from 0 to 2,000 ppm. As a result, it was confirmed that the sample exhibited excellent sensitivity and a response time of about 60 seconds.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1925-1927
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• 1999

At the study, it has fabricated Al/AlN/GaAs MIS capacitor using DC reactive sputtering method. To applicate GaAs semiconductor in a MIS devices, investigated capability of AIN thin film by the insulator layer. Also it has investigated inversion of C-V characteristics by addition of the hydrogen(hydrogen concentration: 5%) and it has investigated that leakage current has $10^{-8}A/cm^2$ for 1 MV/cm breakdown electric field of I-V characteristics.

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.2725-2730
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• 2007

Turbo-type molecular drag pumps ( MDPs ) are used in the liquid crystal display ( LCD ), semiconductor and other thin film industries. Siegbahn ( disk-type ) molecular drag pumps are used as high-pressure stages in the hybrid-type turbomolecular pumps, where they can operate in the viscous, the transition and the free molecular flow regime. In this study is performed to investigate the pumping characteristics of three-stage disk-type molecular drag pump ( DTDP ) in the molecular transition flow region. The experiments are measured using five vacuum pressure gauges in the positions for rotors of DTDP. The test is performed with nitrogen gas ( $N_2$ ).

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.185.2-185.2
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• 2015

Tin Oxide (SnO2) has been widely investigated as a transparent conducting oxide (TCO) and can be used in optoelectronic devices such as solar cell and flat-panel displays. In addition, it would be applicable to fabricating the wide bandgap semiconductor because of its bandgap of 3.6 eV. There have been concentrated on the improvement of optical properties, such as conductivity and transparency, by doping Indium Oxide and Gallium Oxide. Recently, with development of fabrication techniques, high-qulaity SnO2 epitaxial thin films have been studied and received much attention to produce the electronic devices such as sensor and light-emitting diode. In this study, powder sputtering method was employed to deposit epitaxial thin films on sapphire (0001) substrates. A commercial SnO2 powder was sputtered. The samples were prepared with varying the growth parameters such as gas environment and film thickness. Then, the samples were characterized by using XRD, SEM, AFM, and Raman spectroscopy measurements. The details of physical properties of epitaxial SnO2 thin films will be presented.

• Journal of the Korean Ceramic Society
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• v.30 no.10
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• pp.866-870
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• 1993

For VO2-based sensors applicable to temperature measurements and optical disk materials by the nature of semiconductor to metal transition, the crystallinity and temperature vs. resistance characteristics were investigated as a function of the heat treatment temperature. The bead-type sensors were prepared through typical sensor fabrication processing and heat-treated at 40$0^{\circ}C$, 50$0^{\circ}C$, and $600^{\circ}C$, respectively, for 30 minutes in H2 gas atmosphere. As results of the temperature vs. resistance measurements, the electrical resistance in the phase transition range was decreased by 102 order for the VO2 sensor and by 103 order for the V71P11Sra18 system. It was estimated that the hysteresis, temperature vs. resistance, and current vs. voltage characteristics of the V71P11Sr18 system could be utilized for commericialization as a temperature sensor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.167-170
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• 1998

The electrical characteristics of Stearic acid LB films were investigated to develop the gas sensor using Langmuir-Blodgett(LB) films. The deposition status of LB films were verified by the measurements of UV absorbance and I-V characteristics. The conductivity of Stearic acid LB films at room temperature was $10^{-8}[S/cm]$, which is typical of semiconductor. The conductivity was found to increase as the temperature was increased. The acitivation energy was about 1[eV].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.194-197
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• 1997

The LB technique is one of the most powerful fabricating methods of organic ultra-thin film, which deposits a monolayer films in molecular level on the surface of the substrate. We have investigated the electrical characteristics of Myristic acid, Stearic acid and Arachidic acid LB films for horizontal direction to develop for the gas sensor. The optimum conditions for a film deposition were obtained by measurement of $\pi$-A isotherm. The status of the deposited film was confirmed by measurement of UV absorbance. We could distingished the difference of I-V characteristics for the fatty acid for the horizontal direction. The conductivity of fatty acid LB films for horizontal direction was 10$^{-7}$ ~ 10$^{-9}$ [S/cm] that mean like semiconductor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.207-207
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• 2006

We investigated the effects of hydrogen addition to the growth process of SiC single crystal using sublimation physical vapor transport(PVT) techniques. Hydrogen was periodically added to an inert gas for the growth ambient during the SiC bulk growth Grown 2"-SiC single crystals were proven to be the polytype of 6H-SiC and carrier concentration levels of about $10^{17}/cm^3$ was determined from Hall measurements. As compared to the characteristics of SiC crystal grown without using hydrogen addition, the SiC crystal without definitely exhibited lower carrier concentration and lower microplpe density as well as reduced growth rate.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.884-885
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• 1998

The electrical characteristics of Stearic acid Langmuir-Blodgett(LB) films were investigated to develop the gas sensor using LB films. The deposition status of LB films were verified I-V characteristic which was increased with an applied voltage for the number of layers and decreased as increasing the distance of electrode. The conductivity of Stearic acid LB films was $10^{-8}[S/cm]$, which is typical of semiconductor. The conductivity of LB films were increased as the temperature was increased. The activation energy was about 1[eV].

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1998.11a
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• pp.165-168
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• 1998

Re-oxidized nitrided oxides which have been investigated as alternative gate oxide for Metal- Oxide -Semiconductor field effect devices were grown by conventional furnace process using pure NH$_3$ and dry $O_2$ gas, and were characterized via a Fowler-Nordheim Tunneling electron injection technique. We studied Ig-Vg characteristics, leakage current, $\Delta$Vg under constant current stress from electrical characteristics point of view and TDDB from reliability point of view of MOS capacitors with SiO$_2$, NO, ONO dielectrics. Also, we studied the effect of stress temperature (25, 50, 75, 100, and 1$25^{\circ}C$). Overall, our results indicate that optimized re-oxidized nitrided oxide shows improved Ig-Vg characteristics, leakage current over the nitrided oxide and SiO$_2$. It has also been shown that re-oxidized nitrided oxide have better TDDB performance than SiO$_2$ while maintaining a similar temperature and electric field dependence. Especially, the Qbd is increased by about 1.5 times.