• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.72-75
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• 2023

Carbon neutrality has been emerged as important mission for all the manufacturing industry to reduce energy usage and carbon emission equivalent. Korean semiconductor and display manufacturing industries are also in huge interest by minimize the energy usage as well as to find a less global warming product gases in both etch and cleaning. In addition, Korean government is also investing long term research and development plan for the safe environment in various ways. In this paper, we revisit previous research activities on carbon emission equivalent and current research activities performed in semiconductor process diagnosis research center at Myongji University with respect to the reduction of NF3 usage for the PECVD chamber cleaning, and we present the analytical result of the exhaust gas with residual gas analysis in both 6 inches and 12 inches PECVD equipment. The presented result can be a reference study of the development of new substitution gas in near future to compare the cleaning rate of the silicon oxide deposition chamber.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.102-105
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• 2005

In this study Al electrode for OLED was deposited by FTS(Facing Targets Sputtering) system which can deposit thin films with low substrate damage. The Al thin films were deposited on the cell (LiF/EML/HTL/Bottom electrode) as a function of working gas such as Ar, Kr or mixed gas. Also Al thin films were prepared with working gas pressure (1, 6 mTorr ). The film thickness and I-V curve of Al/cell were evaluated by $\alpha$-step and semiconductor parameter (HP4156A) measurement.

• Journal of Sensor Science and Technology
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• v.29 no.1
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• pp.14-18
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• 2020

This study investigates the nitrogen dioxide (NO₂) sensing characteristics of an Si MOSFET gas sensor with a tungsten trioxide (WO₃) sensing layer deposited using the sputtering method. The Si MOSFET gas sensor consists of a horizontal floating gate (FG) interdigitated with a control gate (CG). The WO₃ sensing layer is deposited on the interdigitated CG-FG of a field effect transistor(FET)-type gas sensor platform. The sensing layer is deposited with different thicknesses of the film ranging from 100 nm to 1 ㎛ by changing the deposition times during the sputtering process. The sensing characteristics of the fabricated gas sensor are measured at different NO₂ concentrations and operating temperatures. The response of the gas sensor increases as the NO₂ concentration and operating temperature increase. However, the gas sensor has an optimal performance at 180℃ considering both response and recovery speed. The response of the gas sensor increases significantly from 24% to 138% as the thickness of the sensing layer increases from 100 nm to 1 ㎛. The sputtered WO₃ film consists of a dense part and a porous part. As reported in previous work, the area of the porous part of the film increases as the thickness of the film increases. This increased porous part promotes the reaction of the sensing layer with the NO₂ gas. Consequently, the response of the gas sensor increases as the thickness of the sputtered WO₃ film increases.

• Journal of Sensor Science and Technology
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• v.20 no.4
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• pp.279-285
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• 2011

This study was carried out to apply chemical gas sensors for the identification of bad breath which is one of the important sensitive problem for the humans' daily life. Seven sensors, including five semiconductor sensors and two electrochemical sensors, were tested for the three panels three times in several conditions. The results showed that the reproducibility of sensors were generally good, and electrochemical sensors showed better reproducibility while semiconductor sensors showed better sensitivity. No rinsing before measurement showed relatively better results in terms of both sensitivity and reproducibility. Semiconductor gas sensors for hydrogen sulfide shows the highest sensitivity, and it was recommended to use the odor-free bag for the measurement of bad breath.

• Journal of the Semiconductor & Display Technology
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• v.10 no.2
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• pp.13-17
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• 2011

We have developed a new energy-consuming monitoring system that has made it possible to measure the energy consumption of a gas scrubber, one of semiconductor processing equipments, and installed this system to the gas scrubber under operating at a manufacture site. Using this system, we have measured consumptions of electric power and processing gas consumed at standby to operating mode. In case of the gas scrubber, processing gas flows continuously into it at standby and operating mode. Therefore, if the electric power has been supplied, the processing gas can flows into the device for 24 hours. Moreover, at operating of gas scrubber, the amount of electricity consumption is 5 kWh. At Standby of gas scrubber, it spends 3kwh. It is certain that the energy consumption is greater at operating mode than at standby mode. The carbon emission rates from 24 hour gas scrubber operation are 236 $kgCO_2$/day of $N_2$, 57 $kgCO_2$/day of electric power and 0.001 $kgCO_2$/day of cooling water. Most of carbon is emitted from $N_2$ gas and electric power consumption.

• Journal of the Semiconductor & Display Technology
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• v.15 no.1
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• pp.52-55
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• 2016

GZO film was prepared on p-type Si wafer and then annealed at various temperatures in an air conditions to research the bonding structures in accordance with the annealing processes. GZO film annealed in an atmosphere showed the various bonding structure depending on annealing temperatures and oxygen gas flow rate during the deposition. The difference of bonding structures of GZO films made by oxygen gas flows between 18 sccm and 22 sccm was so great. The bonding structures of GZO films made by oxygen gas flow of 18 sccm were showed the crystal structure, but that of 22 sccm were showed the amorphous structure in spite of after annealing processes. The bonding structure of GZO as oxide-semiconductor was observed the trend of becoming amorphous structures at the temperature of $200^{\circ}C$. Therefore, the characteristics of oxide semiconductor are needed to research the variation near the annealing at $200^{\circ}C$.

• Journal of the Korean Institute of Gas
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• v.15 no.3
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• pp.74-78
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• 2011

$BF_3$ gas has been used for semiconductor manufacturing process and applied in plasma etching, chemical vapor deposition, chamber cleaning processes etc,. $BF_3$ provides Boron and acts as a p-type doping in electrode in semiconductor. In this study, we investigate thermaldecomposition of alkali-boron complexes and suggest a simple way to produce $BF_3$ from $NaBF_4$ and $KBF_4$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.6 no.5
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• pp.373-377
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• 2005

In this paper the gas leakage controller in processing chamber for semiconductor manufacturing is proposed. A pressure sensor is connected between the final valve and the numeric valve. A pressure sensor signal and a numeric valve signal are controlled by a proposed digital circuit module. Gas leakage condition, producing by 2nd plasticity in semiconductor process, display at LED. The proposed controller module is useful for monitoring the gas flow for preventing the critical process gas leakage.

• Journal of Climate Change Research
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• v.8 no.1
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• pp.57-62
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• 2017

Greenhouse gas (GHG) emissions of private industry of Chungcheongbuk-do were estimated. GHG emissions were classified by industry and GHG emissions ratio of each industry of Chungcheongbuk-do was found. Characteristics of GHG emissions of Chungcheongbuk-do and GHG mitigation technology were analyzed. To calculate GHG emissions, equations proposed through GHG emissions calculation guidelines published by Korean Energy Agency in 2009 were used. As a result, GHG emissions ratio of cement, semiconductor, paper and petrochemical industry was about 73%, 16%, 5%, and 2% respectively. GHG mitigation technologies of cement, semiconductor and waste were investigated. For cement, amine technology, for semiconductor, scrubber system and for waste, land fill gas utilization were analyzed.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.05a
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• pp.105-108
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• 2006

We investigated the fluidic gas-driven carbon-nanotube motor based on multi-wall carbon nanotubes and fluidic gas flow. Since the origination of the torque was the friction between the carbon nanotube surface and the fluidic gases, the density and the flow rate of the working gas or liquid were very important for the carbon nanotube motor. Molecular simulation results showed that multi-wall carbon nanotubes with very low rotating energy barriers could be effectively used for fluidic gas-driven carbon-nanotube motors.