• 반도체디스플레이기술학회지
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• 제21권4호
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• pp.86-91
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• 2022

Cache bypassing is a scheme to prevent unnecessary cache blocks from occupying the capacity of the cache for avoiding cache contamination. This method is introduced to alleviate the problems of non-volatile memories (NVMs)-based memory system. However, the prior works have been studied without considering wear-out attack. Malicious writing to a small area in NVMs leads to the failure of the system due to the limited write endurance of NVMs. This paper proposes a novel scheme to prolong the lifetime with higher resistance for the wear-out attack. First, the memory reference pattern is found by modified reuse distance calculation for each cache block. If a cache block is determined as the target of the attack, it is forwarded to higher level cache or main memory without updating the NVM-based cache. The experimental results show that the write endurance is improved by 14% on average and 36% on maximum.

• 반도체디스플레이기술학회지
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• 제20권4호
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• pp.102-107
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• 2021

In this paper, the measurements of received power was shown and compared in two developed 5.8GHz 25W wireless charging systems. One is the system using commercial transmission antenna, and the other is the system using transmission antenna combined with metamaterial. The system combined with metamaterial shows higher received power due to negative reflective index of metamaterial. In addition, a comparative analysis of the systems shows that the transmission efficiency in the systems can decrease the real gain of transmission antenna due to higher side robe of beam pattern. The side robe beams of transmitting antenna interferes transmitted beam with the reflected beams from the bottom region due to the side robes. The failure problems of the RF wireless charging systems are discussed and proposed in order to charge mobile devices through the RF wireless charging system.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1997년도 한국자동제어학술회의논문집; 한국전력공사 서울연수원; 17-18 Oct. 1997
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• pp.1485-1488
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• 1997

The capacity of memory chip has increased vert quickly and 64MDRAM becomes main product in semiconductor manufacturing lines consists of many sequential processes, including etching process. although it needs direct sensing of wafer state for the accurae detching, it depends on indirect esnsing and sample test because of the complexity of the plasma etching. This equipment receives the inner light of etch chamber through the viewport and convets it to the voltage inetnsity. In this paper, EDP voltage signal has a new role to detect etching failure. First, we gathered data(EPD sigal, etching time and etchrate) and then analyzed the relationships between the signal variatin and the etch rate using two neural network modeling. These methods enable to predict whether ething state is good or not per wafer. For experiments, it is used High Density Inductive coupled Plasma(HDICP) ethcing equipment. Experiments and results proved to be abled to determine the etching state of wafer on-line and analyze the causes by modeling and EPD signal data.

• 전력전자학회논문지
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• 제18권2호
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• pp.199-204
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• 2013

Recently, the demand for fuel efficient electric vehicles (EVs) and hybrid electric vehicles (HEVs) has been growing globally. Due to the increased number of switching devices in the electrified vehicles, the probability of the semiconductor device failure is much higher than in other application areas. A sudden failure in one of the power switches and insufficient power management ability in the systems not only decreases system performance, but also leads to critical safety problems. In this paper, novel switch open circuit fault detection method is proposed, and the proposed approach is verified by experiments.

• Transactions on Electrical and Electronic Materials
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• 제5권4호
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• pp.138-142
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• 2004

This paper presents the improved bum-in method for the reliability of SRAM in Multi Chip Package (MCP). Semiconductor reliability is commonly improved through the bum-in process. Reliability problem is more significant in MCP that includes over two chips in a package, because the failure of one chip (SRAM) has a large influence on the yield and quality of the other chips - Flash Memory, DRAM, etc. Therefore, the quality of SRAM must be guaranteed. To improve the quality of SRAM, we applied the improved wafer level bum-in process using multi cells selection method in addition to the previously used methods. That method is effective in detecting special failure. Finally, with the composition of some kind of methods, we could achieve the high quality of SRAM in Multi Chip Package.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.53-56
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• 2004

This paper presents the improved burn-in method for the reliability of SRAM in MCP Semiconductor reliability is commonly improved through the burn-in process. Reliability problem is more significant in the Multi Chip Package, because of including over two devices in a package. In the SRAM-based Multi Chip Package, the failure of SRAM has a large effect on the yield and quality of the other chips - Flash Memory, DRAM, etc. So, the quality of SRAM must be guaranteed. To improve the quality of SRAM, we applied the improved wafer level burn-in process using multi cell selection method in addition to the current used methods. That method is effective in detecting special failure. Finally, with the composition of some kinds of methods, we could achieve the high qualify of SRAM in Multi Chip Package.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권3호
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• pp.114-121
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• 2003

Through comparing stress state of TEOS and SiLK-embedded structures, the effect of low-k materials on stress and stress distribution in via-line structures were investigated using three-dimensional finite element analyses. In the case of TEOS-embedded via-line structures, hydrostatic stress was concentrated at the via and the top of the lines, where the void was suspected to nucleate. On the other hand, in the via-line structures integrated with SiLK, large von-Mises stress is maintained at the via, thus deformation of via is expected as the main failure mode. A good correlation between the calculated results and experimentally observed failure modes according to dielectric materials was obtained.

• 한국생산제조학회지
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• 제18권4호
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• pp.362-368
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• 2009

In general, circuit board assemblies experience various mechanical loadings during assembly and in actual use. The repeated cyclic bending can cause electrical failures due to circuit board cracks, solder interconnects cracks, and the component cracks. In this paper, we report on the failure characteristics of semiconductor chips under the repeated cyclic bending. We first describe a new 4-point bending tester, which is developed according to JEDEC standard No. 22B113. The performance of the tester is then estimated through actual experiments. Test results reveal that the cracks first occur on the outer balls around 20,000 cycles and gradually propagate to the inner balls where cracks are found around 70,000 cycles.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.124-130
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• 2014

In highly reliable and durable systems, failures due to aging might result in catastrophes. Aging monitoring techniques to prevent catastrophes by predicting such a failure are required. This paper presents a scan-based on-line aging monitoring scheme which monitors aging during normal operation and gives an alarm if aging is detected so that the system users take action before a failure occurs. We illustrate our modified scan chain architecture and aging monitoring control method. Experimental results show our simulation results to verify the functions of the proposed scheme.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권3호
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• pp.107-113
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• 2003

Microelectronics device performance and its reliability are directly related to and controlled by its constituent materials and their microstructure. Specific processes used to form and shape the materials microstructure need to be controlled in order to achieve the ultimate device performance. Examples of front-end and back-end ULSI processes, packaging process, and novel optical storage materials are given to illustrate such process-structure-property-reliability relationship. As more novel materials are introduced to meet the new requirements for device shrinkage, such under-standing is indispensable for future generation process development and reliability assessment.