• Journal of the Korean Society of Safety
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• v.16 no.2
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• pp.57-62
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• 2001

In order to analyze the mechanism of semiconductor device damages by ESD, this paper adopts a new charged-device model(CDM), field-induced charged nudel(FCDM), simulator that is suitable for rapid routine testing of semiconductor devices and provides a fast and inexpensive test that faithfully represents ESD hazards in plants. The high voltage applied to the device under test is raised by the fie]d of non-contacting electrodes in the FCDM simulator. which avoids premature device stressing and permits a faster test cycle. Discharge current md time are measured and calculated The FCDM simulator places the device at a huh voltage without transferring charge to it, by using a non-contacting electrode. The only charge transfer in the FCMD simulator happens during the discharge. This paper examine the field charging mechanism, measure device thresholds, and analyze failure modes. The FCDM simulator provides a Int and inexpensive test that faithfully represents factory ESD hazards. The damaged devices obtained in the simulator are analyzed and evaluated by SEM Also the results in this paper can be used for to prevent semiconductor devices from ESD hazards.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.210-215
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• 2017

We have developed the neuromorphic system that can work with the four-terminal Si-based synaptic devices and verified the operation of the system using simulation tool and printed-circuit-board (PCB). The symmetrical current mirrors connected to the n-channel and p-channel synaptic devices constitute the synaptic integration part to express the excitation and the inhibition mechanism of neurons, respectively. The number and the weight of the synaptic devices affect the amount of the current reproduced from the current mirror. The double-stage inverters controlling delay time and the NMOS with large threshold voltage ($V_T$) constitute the action-potential generation part. The generated action-potential is transmitted to next neuron and simultaneously returned to the back gate of the synaptic device for changing its weight based on spike-timing-dependent-plasticity (STDP).

• Journal of Korea Society of Digital Industry and Information Management
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• v.10 no.3
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• pp.71-85
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• 2014

This study proposes the future strategy of semiconductor companies corresponding to the growth of cloud computing. Cloud computing is the delivery of IT resources such as hardware and software as a service rather than a product, and it is expected to significantly change the IT market. By employing the scenario planning method, this study develops a total of eight scenario cases, and presents the three possible scenarios including the best market, the worst market, and the neutral market scenario. This study suggests the future strategy of semiconductor companies based on the best market scenario (increasing firms' IT expenditure, increasing the complexity and performance of devices, the frequent replacement of devices). The suggested future strategy of semiconductor includes that the semiconductor companies need to strengthen their price competitiveness, secure the next generation technologies, and develop the better capability for market prediction with the growth of cloud computing. This study will help semiconductor companies set up the strategy direction of technology development, and understand the connections between cloud computing and the memory semiconductor industry. This study has practical implications for semiconductor industry to prepare for the future of cloud computing.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.05a
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• pp.845-848
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• 2009

Power semiconductor devices are semiconductor devices used as switches or rectifiers in power electronics circuits. Theyare also caleed power devices or when used in integrated circuits, called power ICs. Some common power devices are the power diode, thyristor, power MOSFET and IGBT (insulated gate bipolar transistor). A power diode or MOSFET operates on similar principles to its low-power counterpart, but is able to carry a larger amount of current and typically is able to support a larger reverse-bias voltage in the off-state. Structural changes are often made in power devices to accommodate the higher current density, higher power dissipation and/or higher reverse breakdown voltage. The vast majority of the discrete (i.e non integrated) power devices are built using a vertical structure, whereas small-signal devices employ a lateral structure. With the vertical structure, the current rating of the device is proportional to its area, and the voltage blocking capability is achieved in the height of the die. With this structure, one of the connections of the device is located on the bottom of the semiconductor.

• Vacuum Magazine
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• v.5 no.2
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• pp.18-22
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• 2018

wo dimensional (2D) van der Waals (vdW) nanosheet semiconductors have recently attracted much attention from researchers because of their potentials as active device materials toward future nano-electronics and -optoelectronics. This review mainly focuses on the features and applications of state-of-the-art vdW 2D material devices which use transition metal dichalcogenides, graphene, hexagonal boron nitride (h-BN), and black phosphorous: field effect transistors (FETs), complementary metal oxide semiconductor (CMOS) inverters, Schottky diode, and PN diode. In a closing remark, important remaining issues of 2D vdW devices are also introduced as requests for future electronics and photonics applications.

• Journal of the Semiconductor & Display Technology
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• v.19 no.1
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• pp.23-28
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• 2020

In Smart mobile devices embedding big.LITTLE architectures, the conventional multi-core assignment scheme for user applications may incur wasteful energy consumption and long response time. In this paper, we propose a user experience assisted energy-efficient multicore assignment scheme. Our simulation results show that the proposed scheme achieves at 40% less energy consumption and at 20% less response time comparing to the legacy scheme.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.9-10
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• 2005

Process diagrams of selective epitaxial growth of silicon(SEG) could be developed from CVD thermodynamics. They could not only be helpful with understanding of the mechanism, but also offer good processing guidelines in manufacturing high density devices. Through the process optimization skill, applications of SEG to high-density device structures could be possible without problems such as loading effect and facet generation, with producing outstanding electronic properties.

• Journal of Semiconductor Engineering
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• v.2 no.1
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• pp.119-124
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• 2021

Along with the needs for feasibility in the field of space applications, interests in radiation-hardened electronics is growing rapidly. Gallium nitride (GaN)-based devices have been widely researched so far owing to superb radiation resistance. Among them, research on the most abundant protons in low earth orbit (LEO) is essential. In this paper, proton irradiation effects on parameter changes, degradation mechanism, and correlation with reliability of GaN-based devices are summarized.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.3 s.40
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• pp.13-17
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• 2006

Dense and periodic arrays of holes and tungsten none dots were fabricated on silicon oxide and silicon. The holes were approximately 25 nm wide, 40 nm deep, and 60 nm apart. To obtain nano-size patterns, self-assembling resists were used to produce layer of hexagonally ordered parallel cylinders of polymethylmethacrylate(PMMA) in polystyrene(PS) matrix. The PMMA cylinders were degraded and removed with acetic acid rinse to produce a PS mask for pattern transfer. The silicon oxide was removed by fluorine-based reactive ion etching(RIE). Selectively deposited tungsten nano dots were formed inside nano-sized trench by using a low pressure chemical vapor deposition(LPCVD) method. Tungsten nano dot and trenched silicon sizes were 26 nm and 30 nm, respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.153.1-153
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• 1998