• Title/Summary/Keyword: semiconductor devices

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Orientation, Surface Roughness and Piezoelectric Characteristics of AlN Thin Films with RF Magnetron Sputtering Conditions (RF 마그네트론 스퍼터링 공정 조건에 따른 AlN 박막의 배향성, 표면 거칠기 및 압전 특성에 관한 연구)

  • Bang Jung-Ho;Chang Dong-Hoon;Kang Seong-Jun;Kim Dong-Guk;Yoon Yung-Sup
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.4 s.346
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    • pp.1-7
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    • 2006
  • AlN thin films have been fabricated by using RF magnetron sputtering method and their crystal orientations, microstructures and piezoelectric properties have been investigated with variation of the $Ar/N_2$ gas ratio and the substrate temperature. Particularly, when the $Ar/N_2$ gas ratio and the substrate temperature are 10/10 (sccm) and $400^{\circ}C$, respectively, the AlN thin film exhibits the highest (002) orientation. The result of the surface roughness measurement by using AFM shows that the surface roughness becomes better as the partial pressure of $N_2$ increases at the substrate temperature of $400^{\circ}C$ and it becomes the smallest value of 2.1 nm when $Ar/N_2$ is 0/20 (sccm). The AFM measurement also shows that when $Ar/N_2$ is 10/10 (sccm) shows that surface roughness becomes better as the substrate temperature increases from room temperature up to $300^{\circ}C$ and then it becomes worse as the substrate temperature goes up from $300^{\circ}C$. At the substrate temperature of $300^{\circ}C$ and $Ar/N_2$=10/10 (sccm), the surface roughness is 3.036 nm. The piezoelectric constant ($d_{33}$) of AlN thin film is measured by Pneumatic probe method. The measurement shows that the AlN thin film with the highest (002) orientation, fabricated at $Ar/N_2$=10/10 (sccm) and the substrate temperature of $400^{\circ}C$, has the best Piezoelectric constant ($d_{33}$) of 6.01 pC/N.

Reliability Assessment of Flexible InGaP/GaAs Double-Junction Solar Module Using Experimental and Numerical Analysis (유연 InGaP/GaAs 2중 접합 태양전지 모듈의 신뢰성 확보를 위한 실험 및 수치 해석 연구)

  • Kim, Youngil;Le, Xuan Luc;Choa, Sung-Hoon
    • Journal of the Microelectronics and Packaging Society
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    • v.26 no.4
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    • pp.75-82
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    • 2019
  • Flexible solar cells have attracted enormous attention in recent years due to their wide applications such as portable batteries, wearable devices, robotics, drones, and airplanes. In particular, the demands of the flexible silicon and compound semiconductor solar cells with high efficiency and high reliability keep increasing. In this study, we fabricated a flexible InGaP/GaAs double-junction solar module. Then, the effects of the wind speed and ambient temperature on the operating temperature of the solar cell were analyzed with the numerical simulation. The temperature distributions of the solar modules were analyzed for three different wind speeds of 0 m/s, 2.5 m/s, and 5 m/s, and two different ambient temperature conditions of 25℃ and 33℃. The flexibility of the flexible solar module was also evaluated with the bending tests and numerical bending simulation. When the wind speed was 0 m/s at 25 ℃, the maximum temperature of the solar cell was reached to be 149.7℃. When the wind speed was increased to 2.5 m/s, the temperature of the solar cell was reduced to 66.2℃. In case of the wind speed of 5 m/s, the temperature of the solar cell dropped sharply to 48.3℃. Ambient temperature also influenced the operating temperature of the solar cell. When the ambient temperature increased to 33℃ at 2.5 m/s, the temperature of the solar cell slightly increased to 74.2℃ indicating that the most important parameter affecting the temperature of the solar cell was heat dissipation due to wind speed. Since the maximum temperatures of the solar cell are lower than the glass transition temperatures of the materials used, the chances of thermal deformation and degradation of the module will be very low. The flexible solar module can be bent to a bending radius of 7 mm showing relatively good bending capability. Neutral plane analysis was also indicated that the flexibility of the solar module can be further improved by locating the solar cell in the neutral plane.

Comparative and Feasibility Evaluation of Detection Ability of Relative Dosimeters using CsPbI2Br and CsPbIBr2 Materials in Brachytherapy QA (근접방사선치료 QA에서 CsPbI2Br과 CsPbIBr2를 이용한 상대 선량계들의 검출 능력 비교 및 적용가능성 평가)

  • Seung-Woo Yang;Sung-Kwang Park
    • Journal of the Korean Society of Radiology
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    • v.17 no.3
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    • pp.433-440
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    • 2023
  • High dose rate brachytherapy is a cancer treatment that intensively irradiates radiation to tumors by inserting isotopes with high dose rates into the body. For such a treatment, it is necessary to deliver an accurate dose to the tumor tissue through an accurate treatment plan while delivering only a minimum dose to the normal tissue. Therefore, it is very important to check the location accuracy of the source through accurate Quality Assurance (QA) in clinical practice. However, since the source position is determined using a ruler, automatic radiographer, video monitor, etc. in clinical practice, it yields inaccurate results. In this study, a semiconductor dosimeter using CsPbI2Br and CsPbIBr2 was fabricated. And, in order to analyze whether it is more suitable for the relative QA dosimeter for brachytherapy device among the two materials, the radiation detection ability of each was compared and evaluated. In order to evaluate the radiation detection ability in brachytherapy, the reproducibility and linearity of the two materials were evaluated in 192IR. In the reproducibility evaluation, CsPbI2Br presented a Relative Standard Deviatio(RSD) of 0.98% and CsPbIBr2 presented an RSD of 3.45%. In the linearity evaluation, the coefficient of determination (R2) of CsPbI2Br was presented as 0.9998, and the R2 of CsPbIBr2 was presented as 0.9994. As a result of the evaluation, it was found that CsPbI2Br was more stable in radiation detection while satisfying the evaluation criteria in the dosimeter manufactured in this experiment. Therefore, CsPbI2Br material is suitable for application as a relative dosimeter for radiation detection in brachytherapy devices.