• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.79-80
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• 2006

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-Insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The temperature dependence of the energy band gap of the $CdIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation. $E_g(T)=2.7116 eV-(7.74{\times}10^{-4} eV)T^2/(T+434)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CdIn_2S_4$ have been estimated to be 0.1291 eV and 0.0248 eV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $AgInS_2$/GaAs epilayer. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and C1-exciton peaks for n = 1.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.21 no.3
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• pp.186-192
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• 2009

In this study it is intended to review the moving characteristics of smoke by performing visualization for calculation of the optimal smoke exhaust air volume in case a fire occurs in tunnels where transverse ventilation is applied, and to obtain basic data necessary for design of the smoke exhaust systems by deriving optimal smoke exhaust operational conditions under various conditions. As a result of this study, if it was assumed 0 critical velocity in the tunnel, the smoke exhaust air volume was limited within 250 meter in the road-tunnel disaster prevention indicator and the exhaust efficiency was from 55.1% to 95.8% in the result of this study. In case of oversized exhaust ports, the generated smoke is more than the case of uniform exhaust. When the critical velocity in the tunnel is 1.75 m/s and 2.5 m/s, the optimal smoke exhaust air volume has to be more than $173\;m^3/s$, $236\;m^3/s$ for the distance of the moving smoke which can limit the distance to 250 m.

• Journal of Wetlands Research
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• v.7 no.2
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• pp.53-67
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• 2005

Cheonsu bay, which is typically a semi-closed type, is characterized by various environments such as channels, sand bars, small islands and tidal flats. The construction of Seosan A and B sea dikes from 1983 to 1985 might continuously change sedimentary environments in the northern part of the bay. In order to investigate sedimentary environment, surface and core sediments were sampled at the Hwangdo tidal flat and adjacent sea in June and October 2003. The surface sediments consisted of five sedimentary facies. Generally, the surface sediments in October were changed coarser on the tidal flat and little changed in the subtidal area compared to those in June 2003. Sedimentary facies analysis of three core sediments suggested that wave and tidal current were relatively strong in the tidal flat near Hwangdo, whereas the energy was relatively low in the tidal flat near channel. Sediment accumulation rates in the Hwangdo tidal flat during 11 months indicated that sediments deposited in the central part, whereas eroded in eastern and western sides of the tidal flat. These caused that sea dike changed tidal current patterns and sediment supplies.

• Korean Journal of Materials Research
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• v.14 no.11
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• pp.755-763
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• 2004

A stoichiometric mixture of evaporating materials for $CuInse_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuInse_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C\;and\;410^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $CuInse_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)=1.1851 eV - (8.99{\times}10^{-4} eV/K)T^2/(T+153 K)$. After the aa-grown $CuInse_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres, the origin of point defects of $CuInse_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{cu},\;V_{Se},\;Cu_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInse_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInse_2$/GaAs did not form the native defects because In in $CuInse_2$ single crystal thin films existed in the form of stable bonds.

• 제어로봇시스템학회:학술대회논문집
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• 2005.06a
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• pp.1048-1053
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• 2005

This paper presents design and integration of the ROBHAZ-DT3, which is a newly developed mobile robot system with chained double-track mechanisms. A passive adaptation mechanism equipped between the front and rear body enables the ROBHAZ-DT3 to have good adaptability to uneven terrains including stairs. The passive adaptation mechanism reduces energy consumption when moving on uneven terrain as well as its simplicity in design and remote control, since no actuator is necessary for adaptation. Based on this novel mobile platform, a rescue version of the ROBHAZ-DT3 with appropriate sensors and a semi-autonomous mapping and localization algorithm is developed to participate in the RoboCup2004 US-Open: Urban Search and Rescue Competition. From the various experiments in the realistic rescue arena, we can verify that the ROBHAZ-DT3 is reliable in traveling rugged terrain and the proposed mapping and localization algorithm are effective in the unstructured environment with uneven ground. The another application is an military robot for an EOD(Explosive Ordnance Disposal) and reconnaissance mission. The military version of the ROBHAZ-DT3 with a water disrupter, a thermal scope and a long distance wireless communication device is developed and sent to the area of military tactics in Iraq. Consequently, the feasibility of the military version of ROBHAZ-DT3 is verified.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.39-43
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• 1998

Single crystals of{{{{ { Zn}_{ 1-x} {Mn }_{x }{Te} }}}} with x=0.3-0.6 were prepared by the standard Bridgeman method. Diffuse neutron diffraction intensities due to the short range magnetic ordering is found in the vicinities of 1 1/2 0 reciprocal point and its equivalent point, indicating that the magnetic correlation of the clusters is the type III antiferromangetic one do the F-type Bravais class crystals, being identical with that of {{{{{ Cd}_{ 1-x} {Mn }_{x }Te }}}}. Neutron inelastic scattering measure-ment has been performed for {{{{{ Zn}_{ 0.6} { Mn}_{ 0.4}Te }}}} sample using the cold neutron spectrometer. AGNES. High resolution measurement with the energy resolution of {{{{ TRIANGLE E= +- .01meV}}}} was carried out in the temperature range from 10K to the ambient. Critical scattering, closely related with the spin glass transition, has been observed for the first time in this semimagnetic semi-conductor. The critical scattering is observed at temperatures in the vicinity of the spin glass transition temperature, 17K. The scattering is observed as a kind of quasielastic scattering in the reciprocal range where the elastic magnetic diffuse scattering has been observed, e.g., 11/20 reciprocal point, indicating the spin fluctuation has dynamic components in this material. Photoconductivity has been discovered below 150K in {{{{{ Zn}_{ 0.4} {Mn }_{0.6 } Te}}}}. The electric AC conductivity has been increased dramatically under the laser light with the wave lengths of {{{{ lambda =6328,5145 and4880 }}}}$\AA$ ,respectively. After the light was darkened, the conductivity was reduced to the original level after about 2000 seconds at 50K, being above the spin glass transition temperature. This phenomenon is the typical persistent photoconductivity; PPC which was similarly found in {{{{ { Zn}_{ 1-x} { Mn}_{x} Te}}}}.

• The Bulletin of The Korean Astronomical Society
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• v.39 no.2
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• pp.74.1-74.1
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• 2014

We study a wraping instability of a geometrically thin, non-self-gravitating disk surrounding binary supermassive black holes on a circular orbit. Such a circumbinay disk is subject to not only tidal torques due Line 8 to the binary gravitational potential but also radiative rorques due to radiation emitted from each accretion disk. We find tat a circumbinary disk initially aligned with the binary orbital plane is unstable to radiation-driven warping beyond the marginally stable warping radius, which is sensitive to both the ratio of vertical to horizontal shear viscosities and the mass-to-energy conversion efficiency. As expected, the tidal torques give no contribution to the growth of warping modes but tend to align the circumbinary disk with the orbital plane. Since the tidal torques can suppress the warping modes in the inner part of circumbinary disk, the circumbinaary disk starts to be warped at the radii larger than the marginally stable warping radius. If the warping radius is of the order of 0.1 pc, a resultant semi-major axis is estimated to be of the order of 10-2 pc to 10-4 pc for 107 Msun black hole. We also discuss the posibility that the central objects of observed warped maser disks in active galactic nuclei are binary supermassive black holes with a triple disk: two accretion disks around the individual black holes and one circumbinary disk surrounding them.

• Korean Chemical Engineering Research
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• v.52 no.3
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• pp.395-401
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• 2014

In this work, the reaction characteristics for the non-catalytic esterification of palm fatty acid distillate were analyzed. The esterification reaction was assumed as the pseudo homogeneous $2^{nd}$ order reversible reaction and 'reaction effectiveness factor (${\eta}$)' was used to take accounts into evaporation and reaction of water and methanol, which take place simultaneously in the liquid phase. The nonlinear programming was used to derive appropriate kinetic parameters, the reaction rate constant and mass transfer coefficient, minimizing the error between experimental data and the numerical values. Based on these parameters, the apparent activation energy was calculated to be 43.98 kJ/mol.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.257-265
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• 2002

A stoichiometric mixture of evaporating materials for AgInS$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, AgInS$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperatures were 680 $^{\circ}C$ and 410 $^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.35${\times}$10$\^$16/ cm$\^$-3/ and 294 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin films was found to be E$\_$g/(T) : 2.1365 eV - (9.89 ${\times}$ 10$\^$-3/ eV) T$^2$/(2930 + T). After the as-grown AgInS$_2$ single crystal thin films was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal thin films has been investigated by using the photoluminescence(PL) at 10 K. The native defects of V$\_$AG/, V$\_$S/, Ag$\_$int/, and S$\_$int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted AgInS$_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in AgInS$_2$/GaAs did not form the native defects because In in AgInS$_2$ single crystal thin films did exist in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.226-229
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68{\times}10^{-4}\;eV/K)T^2/(T+155K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_2$ have been estimated to be 0.2026 eV and 0.2165 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $CuAlSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.