• Ocean and Polar Research
• /
• v.25 no.1
• /
• pp.89-106
• /
• 2003

Analyses of tidal observations and a numerical model of the $M_2$ and $M_4$ tides in the Uldolmok waterway located at the southwestern tip of the Korean Peninsula are described. This waterway is well known fer its strong tidal flows of up to more than 10 knots at the narrowest part of the channel. Harmonic analysis of the observed water level at five tidal stations reveals dramatic changes in the amplitude and phase of the shallow water constituents at the station near the narrowest part, while survey results show a decreasing trend in local mean sea levels toward the narrow section. It was also observed that the amplitudes of semi-diurnal constituents, $M_2$ and $S_2$ are diminishing toward the narrowest part of the waterway. Two-dimensional numerical modeling shows that the $M_2$ energy flux is dominated by the component coming from the eastern boundary. The $M_2$ energy is inward from both open boundaries and is transported toward the narrow region of the channel, where it is frictionally dissipated or transferred to other constituents due to a strong non-linear advection effect. It is also shown that the $M_4$ generation is strong around the narrow region, and the abrupt decrease in the M4 amplitude in the region is due to a cancellation of the locally generated M4 with the component propagated from open boundaries. The superposition of both propagated and generated M4 contributions also explains the discontinuity of the M4 phase lag in the region. The tide-induced residual sea level change and the regeneration effect of the $M_2$ tide through interaction with $M_4$ are also examined.

• Journal of Nutrition and Health
• /
• v.38 no.9
• /
• pp.717-738
• /
• 2005

The present study was conducted to analyze the status of food and nutrients intakes of the colorectal cancer patients in the Daegu$\cdot$Kyungpook area and to find dietary risk factors related to the occurrence of colorectal cancer in this community. The case subjects (123) were selected from the patients recently diagnosed as colorectal cancer at Kyunrpook National University Hospital, the control subjects (182) were selected from the patients of the Department of Orthopedic Surgery at the same hospital and from the healthy volunteers who did not have any gastrointestinal diseases. The food consumption survey was done by individual interviews using semi-quantitative food kequency questionnaire and nutrients intakes were analysed by CAN program. The results of the study suggested that dietary factors which are speculated as the risk factors of colorectal cancer in Daegu$\cdot$Kyungpook area were high consumption of cereals and oils low consumption of fruits and mushrooms, high consumption of energy and fat, especially animal fat, low consumption of dietary fiber, high percentage of energy intake from cereals and potatoes, high intakes of protein, fat, vitamin A and cholesterol from egg, low intake of calcium from vegetables, and high intake of iron from meats and eggs. These findings might be useful for the nuation education to prevent colorectal cancer in the community. However it is recommended to conduct more extensive and systematic survey to reconfirm these dietary risk factors under taking into consideration of the dietary characteristics in this region.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.125-126
• /
• 2006

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films. $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3}$. $345cm^2/V{\cdot}s$ at 293 K, respectively. From the photoluminescence measurement on $CdGa_2Se_4$ single crystal thin film, we observed free excition ($E_x$) existing only high quality crystal and neutral bound exiciton ($D^{\circ},X$) having very strong peak intensity. Then. the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule. an activation energy of impurity was 137 meV.

• Progress in Medical Physics
• /
• v.6 no.1
• /
• pp.49-57
• /
• 1995

The semiconductor detector has a high sensitive to radiation and a small volume. It has been frequently used in high energy photon and electron beamdosimetry. However, Semiconductor detector are subject to radiation damage in high energy radiation beam which reduces the sensitivity and creat a large discrepancy. In this experiments, P-type semiconductor was irradiated to 18 MeV electron beam with pre-irradiation for reducing the sensitivity for high reproducibility and investigated the dose characteristics against the dose rate variations. The sensitivity per unit dose in small dose rate showed a 35％ large different to a large dose rate with pre-irradiation dose for 0.5 KGy and 20％ for 3 KGyin this study. The silicon detector has showed a large dependency of beam direction with 13％ discrepancy and a linear sensitive as increased temperature.

• Carbon letters
• /
• v.12 no.4
• /
• pp.236-242
• /
• 2011

The oxyfluorination effects of activated carbon nanofibers (OFACFs) were investigated for $CO_2$ storage. Electrospun CFs were prepared from a polyacrylonitrile/N,N-dimethylformamide solution via electrospinning and heat treatment. The electrospun CFs were chemically activated in order to generate the pore structure, and then oxyfluorination was used to modify the surface. The samples were labeled CF (electrospun CF), ACF (activated CF), OFACF-1 ($O_2:F_2$ = 7:3), OFACF-2 ($O_2:F_2$ = 5:5) and OFACF-3 ($O_2:F_2$ = 3:7). The functional group of OFACFs was investigated using X-ray photoelectron spectroscopy analysis. The C-F bonds formed on surface of ACFs. The intensities of the C-O peaks increased after oxyfluorination and increased the oxygen content in the reaction gas. The specific surface area, pore volume and pore size of OFACFs were calculated by the Brunauer-Emmett-Teller and density functional theory equation. Through the $N_2$ adsorption isotherm, the specific surface area and pore volume slightly decreased as a result of oxyfluorination treatment. Nevertheless, the $CO_2$ adsorption efficiency of oxyfluorinated ACF improved around 16 wt% due to the semi-ionic interaction effect of surface modificated oxygen functional groups and $CO_2$ molecules.

• Journal of Hydrogen and New Energy
• /
• v.29 no.4
• /
• pp.401-409
• /
• 2018

A numerical investigation has been conducted to find the effects of pressure losses by struts and rakes, and averaging methods on the performance of a multi-stage axial fan and a multi-stage axial compressor. Struts and rakes which produce pressure losses are installed upstream of the aerodynamic inlet plane in the fan and the compressor rigs. Some of normal stator vanes are substituted with thick vanes with total pressure probes to measure total pressure between stages. Three-dimensional Reynolds-averaged Navier- Stokes equations with $k-{\omega}$ SST turbulence model were applied to analyze the pressure losses by the struts, inlet rakes, and thick instrumented vanes. The hexahedral grids were used to construct computational domain. Inlet pressure losses were evaluated for the compressor as a function of Mach number. The passage pressure losses due to the instrumented vanes were evaluated at the two speed lines in the fan. Total properties, such as pressure and temperature, were evaluated at the exit of the fan and the compressor with two different averaging methods which are area-averaging and mass-averaging, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.266-272
• /
• 2002

The stochiometric mixture of evaporating materials for the ZnIn$_2$S$_4$ single crystal thin film was prepared from horizontal furnace. To obtain the ZnIn$_2$S$_4$ single crystal thin film, ZnIn$_2$S$_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100) in the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 610 $^{\circ}C$ and 450 $^{\circ}C$, respectively and the growth rate of the ZnIn$_2$S$_4$ single crystal thin film was about 0.5 $\mu\textrm{m}$/hr. The crystalline structure of ZnIn$_2$S$_4$ single crystal thin film was investigated by photo1uminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of ZnIn$_2$S$_4$ single crystal thin film measured from Hall effect by van der Pauw method are 8.51${\times}$10$\^$17/ cm$\^$-3/, 291 $\textrm{cm}^2$/V$.$s at 293 $^{\circ}$K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the ZnIn$_2$S$_4$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 0.0148 eV and 0.1678 eV at 10 $^{\circ}$K, respectively. From the photoluminescence measurement of ZnIn$_2$S$_4$ single crystal thin film, we observed free excition (E$\_$X/) typically observed only in high quality crystal and neutral donor bound exciton (D$^{\circ}$,X) having very strong peak intensity. The full width at half maximum and binding energy of neutral donor bound excition were 9 meV and 26 meV, respectively. The activation energy of impurity measured by Haynes rule was 130 meV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.273-280
• /
• 2002

The stochiometric mix of evaporating materials for the CuGaTe$_2$ single crystal thin films was prepared from horizontal furnance. For extrapolation method of X-ray diffraction patterns for the CuGaTe$_2$ polycrystal, it was found tetragonal structure whose lattice constant a$\_$0/ and c$\_$0/ were 6.025 ${\AA}$ and 11.931 ${\AA}$, respectively. To obtain the single crystal thin films, CuGaTe$_2$ mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 670 $^{\circ}C$ and 410 $^{\circ}C$ respective1y, and the thickness of the single crystal thin films is 2.1 $\mu\textrm{m}$. The crystalline structure of single crystalthin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. The carrier density and mobility of CuGaTe$_2$ single crystal thin films deduced from Hall data are 8.72${\times}$10$\^$23/㎥, 3.42${\times}$10$\^$-2/㎡/V$.$s at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the CuGaTe$_2$ single crystal thin film, we have found that the values of spin orbit coupling Δs.o and the crystal field splitting Δcr were 0.0791 eV and 0/2463eV at 10K, respectively. From the PL spectra at 10K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0470eV and the dissipation energy of the donor -bound exciton and acceptor-bound exciton to be 0.0490eV, 0.00558eV, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.171-174
• /
• 2004

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at $630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is $2.1{\mu}m$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of $AgGaSe_2$ single crystal thin films measured from Hall effect by van der Pauw method are $4.89{\times}10^{17}\;cm^{-3},\;129cm^2/V{\cdot}s$ at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $AgGaSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}S_o$ and the crystal field splitting ${\Delta}C_r$ were 0.1762 eV and 0.2494 eV at 10 K, respectively. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition $(E_X)$ observable only in high quality crystal and neutral bound exciton $(D^o,X)$ having very strong peak intensity And, the full width at half maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.14 no.2
• /
• pp.453-462
• /
• 1990

The interaction of forced convection-conduction with thermal radiation in laminar boundary layer over a plate fin is studied numerically. The analysis is based on complete solution whereby the heat conduction equation for the fin is solved simultaneously with the conservation equations for mass, momentum and energy in the fluid boundary layer adjacent to the fin. The fluid is a gray medium and diffusion(Rosseland) approximation is used to describe the radiative heat flux in the energy equation. The resulting boundary value problem are convection-conduction parameter N$_{c}$ and radiation-conduction parameter m, Prandtl number Pr. Numerical results are presented for gases with the Prandtl numbers of 0.7 & 5 with values of N$_{c}$ and M ranging from 0 to 10 respectively. The object of this study is to provide the first results on forced convection-radiation interaction in boundary layer flow over a semi-infinite flay plate which can be used for comparisons with future studies that will consider a more accurate expression for the radiative heat flux. The agreement of the results from the complete solution presented by E. M. Sparrow and those from this paper for the special case of M=0 is good. The overall rate of heat transfer from the fin considering radiative effect is higher than that from the fin neglecting radiative effect. The local heat transfer coefficient with radiative effect is higher than that without radiative effect. In the direction from tip to base, those coefficients decrease at first, attain minimum, and then increase. The larger values of N$_{c}$ M, Pr give rise to larger fin temperature variations and the fin temperature without radiative effect is always higher than that with radiative effect.