• Proceedings of the Optical Society of Korea Conference
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• 1989.02a
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• pp.107-112
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• 1989

We observe experimentally self-pulsing, subharmonic generation, spectral bistability, and chaos in a stable laser diode with delayed optoelectronic feed-back. The laser diode emits 200 ps optical pulses with 1.1 GHz repetition rate in the self-pulsing region. The bistable region critically depends on the closed loop gain of the system. We also explain observed experimental result.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.3
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• pp.43-51
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• 1993

Effects of incident beam position and intensity on self-pumped optical phase conjugation are presented using barium titanate as an optical phase conjugator. Depending on the position of incident beam, the crystal used consists of four major operating regions: irregular pulsing, regular pulsing, stable phase conjugation, and unstable oscillating regions. In the second region, the pulsing frequency and amplitude of phase conjugate beam are proportional to I$_{in}$ and I$_{in}^{0.85}$, respectively, where I$_{in}$ is the incident beam intensity. In the fouth region, the rising time and intensity of the first-generated pulse are proportional to I$_{in}^{0.92}$ and I$_{in}^{0.81}$, respectively. A frequency shift by beam fanning is also discussed by observing interference pattern from an interferometer.

• Smart Structures and Systems
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• v.3 no.1
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• pp.1-22
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• 2007

The energy efficiency of a self-powered wireless sensing system for pressure monitoring in injection molding is analyzed using Bond graph models. The sensing system, located within the mold cavity, consists of an energy converter, an energy modulator, and a ultrasonic signal transmitter. Pressure variation in the mold cavity is extracted by the energy converter and transmitted through the mold steel to a signal receiver located outside of the mold, in the form of ultrasound pulse trains. Through Bond graph models, the energy efficiency of the sensing system is characterized as a function of the configuration of a piezoceramic stack within the energy converter, the pulsing cycle of the energy modulator, and the thicknesses of the various layers that make up the ultrasonic signal transmitter. The obtained energy models are subsequently utilized to identify the minimum level of signal intensity required to ensure successful detection of the ultrasound pulse trains by the signal receiver. The Bond graph models established have shown to be useful in optimizing the design of the various constituent components within the sensing system to achieve high energy conversion efficiency under a compact size, which are critical to successful embedment within the mold structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.527-527
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• 2013

현재 산업에서 상압플라즈마는 생물의학, 표면처리, 용접 및 절단, 화학적 오염제거 등 여러 분야에서 각광받고 있으며 그 잠재력 또한 매우 크다. 통상적으로 글로우 방전은 생물의학, 표면처리, 화학적 오염제거 등에 주로 쓰이고 아크 방전은 용접 및 절단에 응용된다. 이처럼 상압플라즈마는 여러 가지 방전으로 분류되고 그 특성에 맞게 응용되고 있는데 이러한 산업 여러 분야에 적절히 응용하기 위해서는 이에 대한 진단과 특성 분석이 선행적으로 이루어져야 한다. 본 연구에서는 침 대 면 전극을 가진 상압방전장치에서 스트리머로부터 스파크방전으로의 전이과정이 연구되었다. 전극간격, 주파수, 전압, 구동회로의 전류제한 조건을 가변함에 따라 스파크방전으로 전이되는 방전조건과 안정적인 글로우 방전이 유지되는 조건이 어떻게 달라지는지 조사되었다. 또한 방전전류 측정 및 ICCD 영상분석을 통해 Transient spark의 self-pulsing 조건과 주파수변화 특성을 고찰하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.256-256
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• 2011

We have deposited Al2O3 thin films on Si substrates at room temperature by UV-enhanced atomic layer deposition using trimethylaluminum (TMA) and H2O as precursors with UV light. The atomic layer deposition relies on alternate pulsing of the precursor gases onto the substrate surface and subsequent chemisorption of the precursors. In many cases, the surface reactions of the atomic layer deposition are not completed at low temperature. In this experiment, the surface reactions were found to be self-limiting and complementary enough to yield uniform Al2O3 thin films by using UV irradiation at room temperature. The UV light was very effective to obtain the high quality Al2O3 thin films with defectless.

• Journal of Electrical Engineering and information Science
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• v.2 no.3
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• pp.7-13
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• 1997

To overcome the large hardware overhead attendant in the full scan design, the concept of partial scan design has emerged with the virtue of less area and testability close to full scan. Combinational Structure has been developed to avoid the use of sequential test generator. But the patterns sifted on scan register have to be held for sequential depth period upon the aid of the dedicated HOLD circuit. In this paper, a new levelized structure is introduced aiming to exclude the need of extra HOLD circuit. The time to stimulate each scan latch is uniquely determined on this structure, hence each test pattern can e applied by scan shifting and then pulsing a system clock like the full scan but with much les scan flip-flops. Experimental results show that some sequential circuits are levelized by just scanning self-loop flip-flops.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.54-57
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• 1987

A new method optical short pulse generation using diode lasers under the negative electro-optic feedback are proposed. The self-pulsing is induced by feedback itself and the pulse is formed by the interaction of feeback signal and the dynamics of the diode laser. The simulated pulse width is on the order of picosecond with several GIIz repetition rates.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.157.2-157.2
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• 2013

현재 산업에서 상압 플라즈마는 생물의학, 표면처리, 용접 및 절단, 화학적 오염제거 등 여러 분야에서 각광받고 있으며 그 잠재력 또한 매우 크다. 통상적으로 글로우 방전은 생물의학, 표면처리, 화학적 오염제거 등에 주로 쓰이고 아크 방전은 용접 및 절단에 응용된다. 이처럼 상압 플라즈마는 여러 가지 방전으로 분류되고 그 특성에 맞게 응용되고 있는데 이러한 산업 여러 분야에 적절히 응용하기 위해서는 각 플라즈마에 대한 진단과 특성 분석이 선행적으로 이루어져야 한다. 또한, 전원회로의 특성에 따라 플라즈마 특성에 어떤 영향을 미치는지에 대한 연구도 매우 활발히 진행되고 있다. 본 연구에서는 침 대 면 전극구조에서 고전압 dc전원이 RC시정수에 따라 repetition frequency가 변하는 전원 회로의 여러 parameter에 따라 스트리머-스파크 방전의 전기적 특성이 어떻게 변하는지 연구한다. 또한, 시뮬레이션을 통해 실험에 대한 예측, 비교를 목표로 한다.

• Korean Journal of Materials Research
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• v.26 no.8
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• pp.430-437
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• 2016

Aluminum oxide ($Al_2O_3$) thin films were grown by atomic layer deposition (ALD) using a new Al metalorganic precursor, dimethyl aluminum sec-butoxide ($C_{12}H_{30}Al_2O_2$), and water vapor ($H_2O$) as the reactant at deposition temperatures ranging from 150 to $300^{\circ}C$. The ALD process showed typical self-limited film growth with precursor and reactant pulsing time at $250^{\circ}C$; the growth rate was 0.095 nm/cycle, with no incubation cycle. This is relatively lower and more controllable than the growth rate in the typical $ALD-Al_2O_3$ process, which uses trimethyl aluminum (TMA) and shows a growth rate of 0.11 nm/cycle. The as-deposited $ALD-Al_2O_3$ film was amorphous; X-ray diffraction and transmission electron microscopy confirmed that its amorphous state was maintained even after annealing at $1000^{\circ}C$. The refractive index of the $ALD-Al_2O_3$ films ranged from 1.45 to 1.67; these values were dependent on the deposition temperature. X-ray photoelectron spectroscopy showed that the $ALD-Al_2O_3$ films deposited at $250^{\circ}C$ were stoichiometric, with no carbon impurity. The step coverage of the $ALD-Al_2O_3$ film was perfect, at approximately 100%, at the dual trench structure, with an aspect ratio of approximately 6.3 (top opening size of 40 nm). With capacitance-voltage measurements of the $Al/ALD-Al_2O_3/p-Si$ structure, the dielectric constant of the $ALD-Al_2O_3$ films deposited at $250^{\circ}C$ was determined to be ~8.1, with a leakage current density on the order of $10^{-8}A/cm^2$ at 1 V.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.222-222
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• 2011

Titanium dioxide (TiO2) has a number of applications in optics and electronics due to its superior properties, such as physical and chemical stability, high refractive index, good transmission in vis and NIR regions, and high dielectric constant. Atomic layer deposition (ALD), also called atomic layer epitaxy, can be regarded as a special modification of the chemical vapor deposition method. ALD is a pulsed method in which the reactant vapors are alternately supplied onto the substrate. During each pulse, the precursors chemisorb or react with the surface groups. When the process conditions are suitably chosen, the film growth proceeds by alternate saturative surface reactions and is thus self-limiting. This makes it possible to cover even complex shaped objects with a uniform film. It is also possible to control the film thickness accurately simply by controlling the number of pulsing cycles repeated. We have investigated the ALD of TiO2 at 100$^{\circ}C$ using precursors titanium tetra-isopropoxide (TTIP) and H2O on -O, -OH terminated Si surface by in situ X-ray photoemission spectroscopy. ALD reactions with TTIP were performed on the H2O-dosed Si substrate at 100$^{\circ}C$, where one cycle was completed. The number of ALD cycles was increased by repeated deposition of H2O and TTIP at 100$^{\circ}C$. After precursor exposure, the samples were transferred under vacuum from the reaction chamber to the UHV chamber at room temperature for in situ XPS analysis. The XPS instrument included a hemispherical analyzer (ALPHA 110) and a monochromatic X-ray source generated by exciting Al K${\alpha}$ radiation (h${\nu}$=1486.6 eV).